KR940022826A - 반도체 기판상에 제조된 집적 회로 - Google Patents

반도체 기판상에 제조된 집적 회로 Download PDF

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Publication number
KR940022826A
KR940022826A KR1019940004077A KR19940004077A KR940022826A KR 940022826 A KR940022826 A KR 940022826A KR 1019940004077 A KR1019940004077 A KR 1019940004077A KR 19940004077 A KR19940004077 A KR 19940004077A KR 940022826 A KR940022826 A KR 940022826A
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South Korea
Prior art keywords
well
power supply
field effect
semiconductor substrate
effect transistor
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KR1019940004077A
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English (en)
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찌시끼 시께오
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세끼모또 다다히로
니뽄 덴끼 가부시끼가이샤
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Publication of KR940022826A publication Critical patent/KR940022826A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11898—Input and output buffer/driver structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

출력 구동기는 출력 데이타 신호에 응답하여 외부 용량성 부하(LC)를 선택적으로 충 방전하는 상보 인버터 회로(23)에 의해 실행되며, 상보 인버터 회로는 반복적으로 바이어스된 P-형 실리콘 기판(21)에 한정된 n-형 웰(33)로 형성된 P-채널 증진형 전계 효과 트랜지스터(26)와 상기 P-채널 증진형 전계 효과 트랜지스터에 할당된 n-형 웰에 관계된 공간에서 P-형 실리콘 기판에 한정되어 반전적으로 바이어스된 n-형 웰(32)로 집합된 P-형 웰(34)에 형성된 n-채널 증진형 전계 효과 트랜지스터(27)를 가진다.

Description

반도체 기판상에 제조된 집적 회로
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제7도는 본 발명에 따른 반도체 집적 회로의 구조를 도식적으로 도시하는 단면도, 제8A도 내지 제8C도는 본 발명에 따른 반도체 집적 회로를 조립하기 위한 프로세스 시퀀스의 기본 단계를 도시하는 단면도.

Claims (5)

  1. 출력 데이타 신호(S1)를 발생하기 위한 메인 회로(30)와, 출력 데이타 신호( S1)에 응답하여, 제1채널 전도형(p)의 제1전계 효과 트랜지스터(26)와, 상기 제1채널 전도 형태와 반대인 제2전도 형태(n)의 제2전계 효과 트랜지스터(27)의 직렬 조합을 갖고 외부부하(LC)를 선택적으로 충 반전시키는 상보 인버터회로(23)와, 상기 반도체기판을 바이어싱하는 바이어싱 수단(26c/27c/32c/37)을 구비하는 제1전도 형태(p)의 반도체 기판(21)상에 제조된 반도체 집적 회로에 있어서, 상기 제1전계 효과 트랜지스터(26)는 상기 제1전도 형태와 반대인 제2전도 형태(n)로 이루어져 상기 반도체 기판에 형성된 제1웰(well)(33)에 형성되고, 상기 제2전계효과 트랜지스터(27)는 상기 제1웰에 관련된 공간에서 상기 반도체 기판에 형성된 제2전도 형태의 제3웰(32)에 집합된 제1전도 형태의 제2웰(34)에 형성되며, 상기 바이어싱 수단 (26c/27c/32c/37)은 상기 반도체 기판(21)에 따라 상기 제1 및 제3웰(33/32)을 반전적으로 바이어스시키며, 상기 제3웰(32)에 따른 제2웰(34)을 반전적으로 바이스되게 동작하는 반도체 집적 회로.
  2. 제1항에 있어서, 제1전원 공급 서브 시스템(Ldd1/Lgnd1)을 통해 전원 전압을 상보 인버터 회로(23)에 공급하고 제2전원 공급 서브-시스템(Ldd2/Lgnd2)를 통해서는 상기 메인 회로(30)에 전원 전압을 공급하는 전원 공급 시스템(31)을 더 구비하는 반도체 집적회로.
  3. 제1항에 있어서, 상기 바이어싱 수단은, 상기 제1웰(32)에 형성된 제1전도 형태의 제1과-도프된 접촉 영역(26c)과, 상기 제3웰(32)에 형성된 제1전도 형태의 제2과-도프된 접촉 영역(32a)과, 상기 반도체 기판에 형성된 제2전도 형태의 제3의 과-도프된 접촉 영역(37)과, 상기 제2웰에 형성된 제2전도 형태의 제4의 과-도프된 접촉 영역(27c)을 구비하는 반도체 집적 회로.
  4. 제3항에 있어서, 제1전원 공급 서브-시스템(Ldd1/Lgnd1)을 통해 전원 전압을 상보 인버터 회로, 제1의 과 도프된 접촉 영역, 과-도프된 제2접촉 영역, 제4의 과 도프된 접촉 영역에 공급하고, 제2전원 공급 서브-시스템(Ldd2/Lgnd2)를 통해서는 상기 메인 회로와 제3의 과 도프된 접촉 영역에 전원 전압을 공급하는 전원 공급 시스템(31)을 더 구비하는 반도체 집적회로.
  5. 제4항에 있어서, 상기 메인 회로(30)는, 상기 제2의 전도 형태로 반도체 기판에 형성된 제4웰에 형성되는 제1채널 전도 형태의 제3전계 효과 트랜지스터(28)와, 제1전도 형태로 상기 반도체 기판에 형성된 제4웰(35)에 형성되는 제2채널 전도 형태의 제4전계 효과 트랜지스터(29)을 갖는 상보 인버터 회로(25)를 구비하는 반도체 집적 회로.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940004077A 1993-03-03 1994-03-03 반도체 기판상에 제조된 집적 회로 KR940022826A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP5041637A JPH06314773A (ja) 1993-03-03 1993-03-03 半導体装置
JP93-41637 1993-03-03

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KR940022826A true KR940022826A (ko) 1994-10-21

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US (1) US5714796A (ko)
EP (1) EP0614222A1 (ko)
JP (1) JPH06314773A (ko)
KR (1) KR940022826A (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2325889B1 (en) * 1995-04-12 2015-06-10 Fuji Electric Co., Ltd. High voltage integrated circuit, high voltage junction terminating structure, and high voltage MIS transistor
JP3808116B2 (ja) * 1995-04-12 2006-08-09 富士電機デバイステクノロジー株式会社 高耐圧ｉｃ
EP0822660A1 (en) * 1996-07-31 1998-02-04 STMicroelectronics S.r.l. Low noise output buffer for semiconductor electronic circuits
JPH10223771A (ja) * 1997-02-12 1998-08-21 Yamaha Corp 半導体装置とその製造方法
US6066971A (en) * 1997-10-02 2000-05-23 Motorola, Inc. Integrated circuit having buffering circuitry with slew rate control
EP0911974B1 (en) * 1997-10-24 2003-04-09 STMicroelectronics S.r.l. Improved output circuit for integrated circuits
TW421874B (en) * 1998-01-09 2001-02-11 Winbond Electronics Corp Integrated structure for output buffer and silicon controlled rectifier
US6693331B2 (en) 1999-11-18 2004-02-17 Intel Corporation Method of fabricating dual threshold voltage n-channel and p-channel MOSFETS with a single extra masked implant operation
GR20000100023A (el) * 2000-02-01 2001-10-31 I.S.D. Λυσεις Ολοκληρωμενων Συστηματων Ανωνυμος Εταιρεια ΑΥΤΟ-ΠΡΟΣΤΑΤΕΥΟΜΕΝΟΣ ΑΠΟΜΟΝΩΤΗΣ ΕΞΟΔΟΥ ΚΑΤΑ ΤΗΣ ΗΛΕΚΤΡΟΣΤΑΤΙΚΗΣ ΕΚΦΟΡΤΙΣΗΣ (ESD) ΓΙΑ ΤΕΧΝΟΛΟΓΙΕΣ ΤΡΙΠΛΟΥ ΠΗΓΑΔΙΟΥ CMOS/BiCMOS
US20020125537A1 (en) * 2000-05-30 2002-09-12 Ting-Wah Wong Integrated radio frequency circuits
US6713796B1 (en) 2001-01-19 2004-03-30 Dalsa, Inc. Isolated photodiode
JP2002222814A (ja) * 2001-01-23 2002-08-09 Sony Corp 半導体装置およびその製造方法
TW495952B (en) * 2001-07-09 2002-07-21 Taiwan Semiconductor Mfg Electrostatic discharge protection device
US6664909B1 (en) * 2001-08-13 2003-12-16 Impinj, Inc. Method and apparatus for trimming high-resolution digital-to-analog converter
JP2003258117A (ja) * 2002-03-06 2003-09-12 Seiko Epson Corp 半導体装置
US7732890B2 (en) * 2006-06-28 2010-06-08 System General Corp. Integrated circuit with high voltage junction structure
US7834428B2 (en) * 2007-02-28 2010-11-16 Freescale Semiconductor, Inc. Apparatus and method for reducing noise in mixed-signal circuits and digital circuits
JP5259246B2 (ja) 2008-05-09 2013-08-07 ルネサスエレクトロニクス株式会社 半導体装置
US10410934B2 (en) * 2017-12-07 2019-09-10 Micron Technology, Inc. Apparatuses having an interconnect extending from an upper conductive structure, through a hole in another conductive structure, and to an underlying structure

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61147564A (ja) * 1984-12-21 1986-07-05 Iwatsu Electric Co Ltd 相補型電界効果トランジスタを有する集積回路
JPS61245563A (ja) * 1985-04-24 1986-10-31 Hitachi Ltd バイポ−ラｃｍｏｓ半導体装置
JPS62155555A (ja) * 1985-09-18 1987-07-10 Sony Corp 相補型ｍｏｓトランジスタ
US5148255A (en) * 1985-09-25 1992-09-15 Hitachi, Ltd. Semiconductor memory device
JPH0812918B2 (ja) * 1986-03-28 1996-02-07 株式会社東芝 半導体装置の製造方法
JPS62285463A (ja) * 1986-06-03 1987-12-11 Mitsubishi Electric Corp 相補型ｍｏｓ集積回路装置
US5260226A (en) * 1987-07-10 1993-11-09 Kabushiki Kaisha Toshiba Semiconductor device having different impurity concentration wells
JPH02272761A (ja) * 1989-04-14 1990-11-07 Nec Corp 相補型半導体装置
JPH03239359A (ja) * 1990-02-16 1991-10-24 Mitsubishi Electric Corp 半導体装置
JP2523409B2 (ja) * 1990-05-02 1996-08-07 三菱電機株式会社 半導体記憶装置およびその製造方法
KR950009893B1 (ko) * 1990-06-28 1995-09-01 미쓰비시 뎅끼 가부시끼가이샤 반도체기억장치
JP3017809B2 (ja) * 1991-01-09 2000-03-13 株式会社東芝 アナログ・デジタル混載半導体集積回路装置
JPH04239178A (ja) * 1991-01-11 1992-08-27 Nec Corp 集積回路
JPH04245471A (ja) * 1991-01-31 1992-09-02 Fuji Electric Co Ltd 集積回路用ウエハおよび集積回路装置
US5157281A (en) * 1991-07-12 1992-10-20 Texas Instruments Incorporated Level-shifter circuit for integrated circuits

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Publication number Publication date
EP0614222A1 (en) 1994-09-07
US5714796A (en) 1998-02-03
JPH06314773A (ja) 1994-11-08

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