KR940017021A - 반도체 레이저장치 - Google Patents

반도체 레이저장치 Download PDF

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Publication number
KR940017021A
KR940017021A KR1019930029606A KR930029606A KR940017021A KR 940017021 A KR940017021 A KR 940017021A KR 1019930029606 A KR1019930029606 A KR 1019930029606A KR 930029606 A KR930029606 A KR 930029606A KR 940017021 A KR940017021 A KR 940017021A
Authority
KR
South Korea
Prior art keywords
chip
laser
laser chip
base
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1019930029606A
Other languages
English (en)
Korean (ko)
Inventor
가쭈시게 마수이
노부유끼 미야우찌
젠뻬이 다니
히로시 찌꾸가와
마고또 쭈지
마사루 오가와
다께히로 시오모또
Original Assignee
쓰지 하루오
샤프 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34297992A external-priority patent/JPH06196817A/ja
Priority claimed from JP05104801A external-priority patent/JP3074092B2/ja
Priority claimed from JP05125751A external-priority patent/JP3084173B2/ja
Priority claimed from JP5138318A external-priority patent/JP3022059B2/ja
Application filed by 쓰지 하루오, 샤프 가부시끼가이샤 filed Critical 쓰지 하루오
Publication of KR940017021A publication Critical patent/KR940017021A/ko
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0231—Stems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/0232—Lead-frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
KR1019930029606A 1992-12-24 1993-12-24 반도체 레이저장치 Ceased KR940017021A (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP34297992A JPH06196817A (ja) 1992-12-24 1992-12-24 半導体レーザ装置
JP92-342979 1992-12-24
JP05104801A JP3074092B2 (ja) 1993-04-30 1993-04-30 半導体レーザ装置
JP93-104801 1993-04-30
JP05125751A JP3084173B2 (ja) 1993-05-27 1993-05-27 半導体レーザー装置
JP93-125751 1993-05-27
JP5138318A JP3022059B2 (ja) 1993-06-10 1993-06-10 半導体レーザ装置
JP93-138318 1993-06-10

Publications (1)

Publication Number Publication Date
KR940017021A true KR940017021A (ko) 1994-07-25

Family

ID=27469257

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930029606A Ceased KR940017021A (ko) 1992-12-24 1993-12-24 반도체 레이저장치

Country Status (7)

Country Link
US (1) US5557116A (enExample)
EP (1) EP0607700B1 (enExample)
KR (1) KR940017021A (enExample)
CN (1) CN1065672C (enExample)
CA (1) CA2112343C (enExample)
DE (1) DE69326136T2 (enExample)
TW (1) TW289872B (enExample)

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JP3207016B2 (ja) * 1993-07-05 2001-09-10 シャープ株式会社 半導体レーザ装置の樹脂コーティング方法
JP4902044B2 (ja) * 1999-09-24 2012-03-21 シャープ株式会社 半導体レーザ装置、光伝送装置、光伝送システム、電子機器、制御装置、接続コネクタ、通信装置、ならびに光伝送方法、データ送受信方法
JP2001111152A (ja) * 1999-10-06 2001-04-20 Rohm Co Ltd 半導体レーザ
DE10041079A1 (de) * 2000-08-22 2002-03-14 Osram Opto Semiconductors Gmbh Lasermodul mit Ansteuerschaltung
US6905260B2 (en) 2000-12-26 2005-06-14 Emcore Corporation Method and apparatus for coupling optical elements to optoelectronic devices for manufacturing optical transceiver modules
US6867377B2 (en) 2000-12-26 2005-03-15 Emcore Corporation Apparatus and method of using flexible printed circuit board in optical transceiver device
US6799902B2 (en) 2000-12-26 2004-10-05 Emcore Corporation Optoelectronic mounting structure
US6863444B2 (en) 2000-12-26 2005-03-08 Emcore Corporation Housing and mounting structure
US20030057363A1 (en) * 2000-12-26 2003-03-27 Anderson Gene R. Optical power control system
US7021836B2 (en) 2000-12-26 2006-04-04 Emcore Corporation Attenuator and conditioner
US6709170B2 (en) * 2001-01-08 2004-03-23 Optical Communications Products, Inc. Plastic encapsulation of optoelectronic devices for optical coupling
WO2002063730A1 (fr) * 2001-02-05 2002-08-15 Sumitomo Electric Industries, Ltd. Emetteur optique
JP4262937B2 (ja) 2001-07-26 2009-05-13 シャープ株式会社 半導体レーザ装置
JP2003094716A (ja) * 2001-09-20 2003-04-03 Dainippon Screen Mfg Co Ltd 画像記録装置および光源ユニット
JP2003198032A (ja) * 2001-12-27 2003-07-11 Mitsubishi Electric Corp 光素子、光素子モジュール及び光素子用キャリア
JP2003303975A (ja) * 2002-04-08 2003-10-24 Opnext Japan Inc モニタ用フォトダイオード付光モジュール。
JPWO2003098616A1 (ja) * 2002-05-15 2005-09-22 松下電器産業株式会社 光ヘッド
JP4645008B2 (ja) * 2002-06-10 2011-03-09 日亜化学工業株式会社 半導体レーザ装置
US7120178B2 (en) * 2002-06-15 2006-10-10 Intel Corporation Chip carrier apparatus and method
KR100444233B1 (ko) * 2002-06-18 2004-08-16 삼성전기주식회사 서브마운트 일체형 포토다이오드 및 이를 이용한 레이져다이오드 패키지
JP4171621B2 (ja) * 2002-07-15 2008-10-22 シャープ株式会社 半導体レーザ装置
KR100563584B1 (ko) * 2002-07-29 2006-03-22 야마하 가부시키가이샤 자기 센서의 제조 방법과 그 리드 프레임, 자기 센서, 및센서 장치
JP2004152875A (ja) * 2002-10-29 2004-05-27 Nec Compound Semiconductor Devices Ltd 半導体レーザモジュール
US6863453B2 (en) 2003-01-28 2005-03-08 Emcore Corporation Method and apparatus for parallel optical transceiver module assembly
KR100568275B1 (ko) * 2003-09-19 2006-04-05 삼성전기주식회사 Ｐｃｂ타입 리드프레임을 갖는 반도체 레이저 다이오드장치
JP4231418B2 (ja) 2004-01-07 2009-02-25 株式会社小糸製作所 発光モジュール及び車両用灯具
JP4115400B2 (ja) * 2004-01-21 2008-07-09 シャープ株式会社 窒化物半導体レーザ装置
DE602004028796D1 (de) * 2004-02-12 2010-10-07 Askoll Holding Srl Diskrete elektronische Komponente und Montagemethode dafür
US7850374B2 (en) * 2005-01-14 2010-12-14 Avago Technologies Fiber Ip (Singapore) Pte. Ltd. Optical transmitter module with an integrated lens and method for making the module
US7777172B2 (en) * 2007-06-01 2010-08-17 Fairchild Semiconductor Corporation Methods for reducing cross talk in optical sensors
JP5206399B2 (ja) * 2008-12-25 2013-06-12 三菱電機株式会社 レーザ装置及びその製造方法
US8034644B2 (en) * 2009-01-23 2011-10-11 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Light emitting device
JP2012033733A (ja) 2010-07-30 2012-02-16 Sanyo Electric Co Ltd 半導体レーザ装置および光装置
DE102010046088A1 (de) * 2010-09-20 2012-03-22 Osram Opto Semiconductors Gmbh Gehäuse und Verfahren zum Herstellen eines Gehäuses
DE102010046090A1 (de) * 2010-09-20 2012-03-22 Osram Opto Semiconductors Gmbh Gehäuse für ein optoelektronisches Halbleiterbauelement und Halbleiterbauelement
US8867582B2 (en) 2012-04-04 2014-10-21 Osram Opto Semiconductors Gmbh Laser diode assembly
DE102012102305B4 (de) * 2012-03-19 2025-07-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Laserdiodenvorrichtung
DE102012103160A1 (de) 2012-04-12 2013-10-17 Osram Opto Semiconductors Gmbh Laserdiodenvorrichtung
US9300112B2 (en) 2013-12-18 2016-03-29 Lumentum Operations Llc Packaged laser diode and method of packaging a laser diode
JP6202028B2 (ja) * 2015-03-24 2017-09-27 トヨタ自動車株式会社 周辺情報検出センサの配設構造及び自動運転車両
US10144424B2 (en) * 2015-04-09 2018-12-04 Toyota Jidosha Kabushiki Kaisha Arrangement structure for vicinity information detection sensor
CN107154579B (zh) * 2017-07-06 2019-04-19 山东浪潮华光光电子股份有限公司 一种半导体激光器ld芯片封装定位的装置及定位方法
JP6976094B2 (ja) * 2017-07-18 2021-12-08 日本特殊陶業株式会社 発光素子搭載用パッケージ
US11309680B2 (en) * 2017-09-28 2022-04-19 Nichia Corporation Light source device including lead terminals that cross space defined by base and cap
JP7350646B2 (ja) * 2019-12-17 2023-09-26 ＣＩＧ Ｐｈｏｔｏｎｉｃｓ Ｊａｐａｎ株式会社 光モジュール
CN111258008A (zh) * 2020-02-08 2020-06-09 祥茂光电科技股份有限公司 具有垂直地安装的监控光二极管的光发射次组件配置
US11340412B2 (en) * 2020-02-28 2022-05-24 CIG Photonics Japan Limited Optical module
CN114649289B (zh) * 2020-12-17 2026-01-27 意法半导体股份有限公司 引线上芯片半导体器件及引线上芯片半导体器件制造方法
CN114497330B (zh) * 2022-04-18 2022-07-12 至芯半导体(杭州)有限公司 一种to紫外器件封装结构
CN115763389A (zh) * 2022-11-06 2023-03-07 深圳成光兴光电技术股份有限公司 一体化折弯成型的半导体封装结构及其制作方法

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Also Published As

Publication number Publication date
EP0607700A3 (en) 1994-11-30
US5557116A (en) 1996-09-17
CA2112343A1 (en) 1994-06-25
CN1065672C (zh) 2001-05-09
CN1093837A (zh) 1994-10-19
EP0607700B1 (en) 1999-08-25
DE69326136T2 (de) 2000-02-24
TW289872B (enExample) 1996-11-01
DE69326136D1 (de) 1999-09-30
CA2112343C (en) 1998-09-15
EP0607700A2 (en) 1994-07-27

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