KR940006276A - 광 차단 층을 갖는 고 수율 공간 광 변조기 및 반도체 제조 방법 - Google Patents

광 차단 층을 갖는 고 수율 공간 광 변조기 및 반도체 제조 방법 Download PDF

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KR940006276A
KR940006276A KR1019930014809A KR930014809A KR940006276A KR 940006276 A KR940006276 A KR 940006276A KR 1019930014809 A KR1019930014809 A KR 1019930014809A KR 930014809 A KR930014809 A KR 930014809A KR 940006276 A KR940006276 A KR 940006276A
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metal layer
active region
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region
electrically active
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비. 샘프셀 제프리
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윌리엄 이. 힐러
텍사스 인스트루먼츠 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136277—Active matrix addressed cells formed on a semiconductor substrate, e.g. of silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133512—Light shielding layers, e.g. black matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/12—Function characteristic spatial light modulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Thin Film Transistor (AREA)
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  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

광을 수광하는 광학 활성 영역을 갖는 반도체 디바이스는 기판으로부터 광(22)를 차단하는 금속(24)층을 갖는다. 기판은 광캐리어가 광과 접촉함으로써 발생될 경우에 누설 전류를 발생시킬 수 있는 어드레싱 회로(13,14 및 16)을 포함한다, 금속 층(24)는 기판에 도달하지 못하게 하기 위한 디바이스의 필수 부분으로서 피착된다.

Description

광 차단 층을 갖는 고 수율 공간 광 변조기 및 반도체 제조 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1A 및 제1B도는 공간 광 변조기용 어드레싱 회로의 종래의 실시예 및 광차단 층의 실시예를 도시한 도면.
제2도는 광 차단 층을 갖는 공간 광 변조기의 제조 과정을 설명하는 플로우 챠트.

Claims (10)

  1. a. 기판 b. 상기 기판 상의 전기적 활성 영역 c. 상기 기판에 도달하는 광을 차단하기 위한 제1금속층, 및 d, 랜딩 전극 및 어드레싱 전극을 형성하고 상기 제1금속 층 상에 배치되지 않은 모든 영역과 상기 제1금속 층부분 상에 배치되는 제2금속층을 포함하고, 상기 제1금속 층 및 상기 제2금속 층이 상기 기판에 도달하는 모든 광을 차단하는 것을 특징으로 하는 반도체 디바이스.
  2. 제1항에 있어서, 상기 기판이 실리콘인 것을 특징으로 하는 반도체 디바이스.
  3. 제1항에 있어서, 상기 전기적 활성 영역이 트랜지스터의 소스 및 드레인을 더 포함하는 것을 특징으로 하는 반도체 디바이스.
  4. 제1항에 있어서, 상기 반도체 디바이스의 표면 상의 광학 활성 영역을 더 포함하고, 상기 광학 활성 영역이 광원으로부터 광을 수광하여 상기 제1금속층, 상기 전기적 활성 영역 및 상기 기판이 상기 광학 활성 영역에 의해 상기 광으로 부터 부분적으로 차폐되는 것을 특징으로 하는 반도체 디바이스.
  5. 제4항에 있어서, 광을 수광하는 상기 광학 활성 영역이 디지탈 마이크로미러 디바이스의 미러부분인 것을 특징으로 하는 반도체 디바이스.
  6. a. 기판을 준비하는 단계, b. 상기 기판 내의 전기적 활성 영역을 형성하는 단계 c. 금속층이 상기 전기적 활성 영역 및 상기 전기적 활성 영역과 접촉하지 않은 별도 영역과 접촉하는 최소한 하나의 영역을 가지도록 금속층을 상기 전기적 활성 영역에 걸쳐 피착하는 단계, d. 랜딩 전극이 상기 전기적 활성 영역과 접촉하게 되는 상기 제1금속 층의 상기 영역과의 접촉하지 않고, 어드레스 전극이 상기 기판의 상기 전기적 활성 영역과 접촉하는 상기 제1금속 층의 상기 영역에 관되도록 랜딩 및 어드레스 전극을 형성하는 제2금속 층을 정하는 단계, 및 e. 상기 제1 및 제2금속 층, 상기 전기적 활성 영역 및 상기 기판을 상기 광학 활성 영역에 부딪치는 광으로부터 차단하도록 광학 활성 영역을 현상하는 단계를 포함하는 것을 특징으로 하는 반도체 제작 방법.
  7. 제6항에 있어서, 상기 형성 단계가 상기 기판 내에 트랜지스터를 형성하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  8. 제6항에 있어서, 상기 현상 단계가 상기 제2금속 층을 포토레지터로 코팅하는 단계, 추가 금속 층을 피착하는 단계, 힌지 및 포스트를 형성하기 위한 상기 추가 금속 층을 패턴하는 단계 및 상기 포토레지스터를 제거하는 단계를 더 포함하는 것을 특징으로 하는 방법.
  9. a. 기판 b. 상기 기판 상의 전기적 활성 영역 c. 상기 기판에서의 상기 전기적 활성 영역 중 최소한 하나의 영역에 접촉하는 하나의 영역과 상기 전기적 활성 영역과 접촉하지 않은 다른 영역인 최소한 2개의 영역을 포함하여 상기 기판에 도달하는 모든 광을 차단하는 제1금속 층 및 d. 랜딩 전극 및 어드레싱 전극을 형성하는 제2금속 층을 포함하고, 상기 어드레싱 전극이 상기 활성 영역에 접촉된 상기 한 영역에 관련되고, 상기 랜딩 전극이 상기 전기적 활성 영역과 접촉하지 않은 상기 다른 영역에 관련되는 것을 특징으로 하는 반도체 디바이스.
  10. 제9항에 있어서, 상기 제2금속 층이 상기 제1금속 층의 상기 한 영역과 상기 다른 영역 사이의 갭에 도달하는 모든 광을 차단하는 것을 특징으로 하는 디바이스.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019930014809A 1992-08-11 1993-07-31 광 차단층을 갖는 고 수율 공간 광 변조기 및 반도체 제조 방법 KR100277451B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7/928,251 1992-08-11
US07/928,251 US5818095A (en) 1992-08-11 1992-08-11 High-yield spatial light modulator with light blocking layer

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KR940006276A true KR940006276A (ko) 1994-03-23
KR100277451B1 KR100277451B1 (ko) 2001-02-01

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US (2) US5818095A (ko)
EP (1) EP0582850B1 (ko)
JP (1) JPH06169102A (ko)
KR (1) KR100277451B1 (ko)
CN (1) CN1041019C (ko)
DE (1) DE69325213T2 (ko)
TW (1) TW288212B (ko)

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DE69325213T2 (de) 1999-11-25
EP0582850B1 (en) 1999-06-09
US5597736A (en) 1997-01-28
JPH06169102A (ja) 1994-06-14
TW288212B (ko) 1996-10-11
DE69325213D1 (de) 1999-07-15
CN1041019C (zh) 1998-12-02
EP0582850A1 (en) 1994-02-16
KR100277451B1 (ko) 2001-02-01
US5818095A (en) 1998-10-06
CN1088001A (zh) 1994-06-15

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