KR920022337A - 한계 개폐장치 - Google Patents

한계 개폐장치 Download PDF

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Publication number
KR920022337A
KR920022337A KR1019920007430A KR920007430A KR920022337A KR 920022337 A KR920022337 A KR 920022337A KR 1019920007430 A KR1019920007430 A KR 1019920007430A KR 920007430 A KR920007430 A KR 920007430A KR 920022337 A KR920022337 A KR 920022337A
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KR
South Korea
Prior art keywords
film
solvent
ceramic
derived
hydrogen silsesquioxane
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KR1019920007430A
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English (en)
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KR100200399B1 (ko
Inventor
윈톤 마이클 게이트
체. 페르니츠 우도
Original Assignee
노만 에드워드 루이스
다우 코닝 코포레이션
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Publication of KR920022337A publication Critical patent/KR920022337A/ko
Application granted granted Critical
Publication of KR100200399B1 publication Critical patent/KR100200399B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • Neurology (AREA)
  • Mathematical Physics (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computational Linguistics (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Silicon Compounds (AREA)

Abstract

내용 없음.

Description

한계 개폐장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 전극(1) 및 (2)가 박막(3)에 의해 분리된, 본 발명의 대표적인 장치의 단면도이고,
제2도는 본 발명의 한계 개폐 거동을 도식적으로 나타낸 것이며,
제3도는 본 발명에 따른 장치의 적용된 전압에 따른 전류의 변화를 도식적으로 나타낸 것이다.

Claims (9)

  1. 수소 실세스퀴옥산 수질부터 유도된 농밀하지 않은 이산화규소 막을 2개 이상의 전극 사이에 침착시킨 다음, 전극을 통해 한계 전압 이상의 전압을 적용하여 장치를 제조함을 특징으로 하여, 네가티브 차동 저항을 나타내는 한계 개폐장치를 제조하는 방법.
  2. 제1항에 있어서, 이산화규소 막이, 기질을 용매와 수소 실세스퀴옥산 수지를 포함하는 용액으로 피복하고, 용매를 증발시켜 예비 세라믹 피막을 형성시킨 다음, 예비 세라믹 피막을 열분해시킴을 포함하는 방법에 의해 침착되는 방법.
  3. 제1항에 있어서, 장치가 비산화 대기중에 배치되는방법.
  4. 수소 실쉐퀴옥산 수지로부터 유도된 이산화규소와 개질 세라믹 산화물 전구체로부터 유도된 하나 이상의 개질 세라막 산화물을 포함하는 농밀하지 않은 막을 2개 이상의 전극 사이에 침착시킨 다음, 전극을 통해 한계 전압 이상의 전압을 적용하여 장치를 제조함을 특징으로 하여, 네가티브 차동 저항을 나타내는 한계 개폐장치를 제조하는 방법.
  5. 제4항에 있어서, 막이, 용매, 수소 실세스퀴옥산 수지 및 개질 세라믹 산화물 전구체를 포함하는 용액을 기질에 피복하고, 용매를 증발시켜 에비 세라믹 피막을 형성시킨 다음, 예비 세라믹 피막을 열분해시킴을 포함하는 방법에 의해 침착되는 방법.
  6. 제4항에 있어서, 장치가 비산화 대기중에 배치되는 방법.
  7. 수소 실세스퀴옥산으로부터 유도된 실리카를 포함하는 물질과 직접 접촉하는 2개 이상의 리드(lead)를 포함하는 한계 개폐장치.
  8. 제7항에 있어서, 장치가 비산화 대기중에 배치되는 장치.
  9. 제7항에 있어서, 물질이 또한 하나 이상의 개질 세라믹 산화물을 포함하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019920007430A 1991-05-02 1992-05-01 한계 개폐장치 및 이의 제조방법 KR100200399B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US07/674721 1991-05-02
US7/694721 1991-05-02
US07/694,721 US5312684A (en) 1991-05-02 1991-05-02 Threshold switching device

Publications (2)

Publication Number Publication Date
KR920022337A true KR920022337A (ko) 1992-12-19
KR100200399B1 KR100200399B1 (ko) 1999-06-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920007430A KR100200399B1 (ko) 1991-05-02 1992-05-01 한계 개폐장치 및 이의 제조방법

Country Status (12)

Country Link
US (5) US5312684A (ko)
EP (1) EP0512717B1 (ko)
JP (2) JP2683782B2 (ko)
KR (1) KR100200399B1 (ko)
CN (1) CN1029652C (ko)
AU (1) AU641092B2 (ko)
BR (1) BR9201622A (ko)
CA (1) CA2067413A1 (ko)
DE (1) DE69202815T2 (ko)
ES (1) ES2075620T3 (ko)
MX (1) MX9202033A (ko)
TW (1) TW230277B (ko)

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Also Published As

Publication number Publication date
US5348773A (en) 1994-09-20
CN1029652C (zh) 1995-08-30
JP2683782B2 (ja) 1997-12-03
EP0512717A2 (en) 1992-11-11
DE69202815T2 (de) 1996-02-08
JPH05347440A (ja) 1993-12-27
KR100200399B1 (ko) 1999-06-15
BR9201622A (pt) 1992-12-15
JPH06291336A (ja) 1994-10-18
EP0512717B1 (en) 1995-06-07
US5312684A (en) 1994-05-17
CN1067765A (zh) 1993-01-06
US5283545A (en) 1994-02-01
ES2075620T3 (es) 1995-10-01
AU641092B2 (en) 1993-09-09
CA2067413A1 (en) 1992-11-03
EP0512717A3 (en) 1993-06-30
AU1590492A (en) 1992-11-05
JPH0793468B2 (ja) 1995-10-09
TW230277B (ko) 1994-09-11
US5293335A (en) 1994-03-08
US5401981A (en) 1995-03-28
DE69202815D1 (de) 1995-07-13
MX9202033A (es) 1992-11-01

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