KR950034766A - 절연게이트형 전계효과 트랜지스터와 그 제법 - Google Patents

절연게이트형 전계효과 트랜지스터와 그 제법 Download PDF

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KR950034766A
KR950034766A KR1019950008329A KR19950008329A KR950034766A KR 950034766 A KR950034766 A KR 950034766A KR 1019950008329 A KR1019950008329 A KR 1019950008329A KR 19950008329 A KR19950008329 A KR 19950008329A KR 950034766 A KR950034766 A KR 950034766A
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South Korea
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metal electrode
field effect
effect transistor
insulated gate
gate field
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KR1019950008329A
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English (en)
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다까시 노구찌
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오오가 노리오
소니 가부시끼가이샤
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Publication of KR950034766A publication Critical patent/KR950034766A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4941—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/933—Germanium or silicon or Ge-Si on III-V

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명의 목적은 금속전극으로서 Al을 포함하는 금속층이 이용되는 경우의 Al의 p-n접합에의 관통의 문제, 금속전극의 피착부에 있어서의 저항증가의 문제해결을 도모하는데 있다.
그 구성은 적어도 실리콘 반도체에 의한 소스 및 드레인(4S 및 4D)에 대하여 금속전극(7S 및 7D)이 저항성으로 피착되는 절연게이트형 전계효과 트랜지스터에 있어서, 적어도 그 금속전극(7S 및 7D)이 저항성으로 피착되는 소스 드레인(4S 및 4D)에 Si1-xGex(21)를 거쳐서 금속전극(7S 및 7D)을 저항성으로 피착하는 구성으로 한다.

Description

절연게이트형 전계효과 트랜지스터와 그 제법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 의한 절연게이트형 전계효과 트랜지스터의 일예의 주요부의 단면도이다.

Claims (4)

  1. 적어도 실리콘 반도체에 의한 소스 및 드레인에 대하여 금속전극의 저항성으로 피착되는 절연게이트형 전계효과 트랜지스터에 있어서, 적어도 상기 금속전극이 저항성으로 피착되는 상기 소스 및 드레인에 Si1-xGex층을 거쳐서 금속전극을 저항성으로 피착하도록 구성된 것을 특징으로 하는 절연게이트형 전계효과 트랜지스터.
  2. 제1항에 있어서, 상기 금속전극이 적어도 Al을 포함하도록 구성된 것을 특징으로 하는 절연게이트형 전계효과 트랜지스터.
  3. 적어도 실리콘 반도체에 의한 소스 및 드레인에 대하여 금속전극의 저항성으로 피착되는 절연게이트형 전계효과 트랜지스터의 제법에 있어서, 적어도 상기 금속전극이 저항성으로 피착되는 상기 소스 및 드레인상의 금속전그그이 형성부에 개구를 형성한 산화물 절연층을 피복하는 공정과, 그후, 상기 산화물 절연층의 상기 개구를 통하여 외부에 노출하는 적어도 상기 소스 및 드레인상에 Si1-xGex층을 선택적으로 형성하는 선택적 Si1-xGex의 가상성정공정과, 이 Si1-xGex층상에 금속전극을 저항성으로 피착하는 공정을 채택하도록 구성된 것을 특징으로 하는 절연게이트형 트랜지스터의 제법.
  4. 제3항에 있어서, 상기 금속전극은 Al을 포함하는 구성재료를 가지도록 구성된 것을 특징으로 하는 절연게이트형 트랜지스터의 제법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950008329A 1994-04-19 1995-04-11 절연게이트형 전계효과 트랜지스터와 그 제법 KR950034766A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6080684A JPH07288323A (ja) 1994-04-19 1994-04-19 絶縁ゲート型電界効果トランジスタとその製法
JP94-80684 1994-04-19

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KR950034766A true KR950034766A (ko) 1995-12-28

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Publication number Priority date Publication date Assignee Title
US6787805B1 (en) 1999-06-23 2004-09-07 Seiko Epson Corporation Semiconductor device and manufacturing method
US6506672B1 (en) * 1999-06-30 2003-01-14 University Of Maryland, College Park Re-metallized aluminum bond pad, and method for making the same
US6303450B1 (en) * 2000-11-21 2001-10-16 International Business Machines Corporation CMOS device structures and method of making same
US6511905B1 (en) * 2002-01-04 2003-01-28 Promos Technologies Inc. Semiconductor device with Si-Ge layer-containing low resistance, tunable contact
JP2004079887A (ja) 2002-08-21 2004-03-11 Renesas Technology Corp 半導体装置
US7262119B1 (en) * 2002-12-18 2007-08-28 Lsi Corporation Method for incorporating germanium into a semiconductor wafer
US20220130904A1 (en) * 2020-10-23 2022-04-28 Stmicroelectronics (Rousset) Sas Buried track

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US5172203A (en) * 1983-12-23 1992-12-15 Sony Corporation Semiconductor device with polycrystalline silicon active region and method of fabrication thereof
US5126805A (en) * 1989-11-24 1992-06-30 Gte Laboratories Incorporated Junction field effect transistor with SiGe contact regions

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JPH07288323A (ja) 1995-10-31

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