DE69202815T2 - Schwellwertschalter mit negativem differentiellen Widerstand. - Google Patents

Schwellwertschalter mit negativem differentiellen Widerstand.

Info

Publication number
DE69202815T2
DE69202815T2 DE1992602815 DE69202815T DE69202815T2 DE 69202815 T2 DE69202815 T2 DE 69202815T2 DE 1992602815 DE1992602815 DE 1992602815 DE 69202815 T DE69202815 T DE 69202815T DE 69202815 T2 DE69202815 T2 DE 69202815T2
Authority
DE
Germany
Prior art keywords
threshold switch
negative differential
differential resistance
resistance
negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1992602815
Other languages
English (en)
Other versions
DE69202815D1 (de
Inventor
Keith Winton Michael
Udo C Pernisz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Application granted granted Critical
Publication of DE69202815D1 publication Critical patent/DE69202815D1/de
Publication of DE69202815T2 publication Critical patent/DE69202815T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of switching materials, e.g. deposition of layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/02—Contacts characterised by the material thereof
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Biophysics (AREA)
  • Neurology (AREA)
  • Mathematical Physics (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Computational Linguistics (AREA)
  • Software Systems (AREA)
  • Artificial Intelligence (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Memories (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Silicon Compounds (AREA)
DE1992602815 1991-05-02 1992-04-24 Schwellwertschalter mit negativem differentiellen Widerstand. Expired - Fee Related DE69202815T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/694,721 US5312684A (en) 1991-05-02 1991-05-02 Threshold switching device

Publications (2)

Publication Number Publication Date
DE69202815D1 DE69202815D1 (de) 1995-07-13
DE69202815T2 true DE69202815T2 (de) 1996-02-08

Family

ID=24790016

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992602815 Expired - Fee Related DE69202815T2 (de) 1991-05-02 1992-04-24 Schwellwertschalter mit negativem differentiellen Widerstand.

Country Status (12)

Country Link
US (5) US5312684A (de)
EP (1) EP0512717B1 (de)
JP (2) JP2683782B2 (de)
KR (1) KR100200399B1 (de)
CN (1) CN1029652C (de)
AU (1) AU641092B2 (de)
BR (1) BR9201622A (de)
CA (1) CA2067413A1 (de)
DE (1) DE69202815T2 (de)
ES (1) ES2075620T3 (de)
MX (1) MX9202033A (de)
TW (1) TW230277B (de)

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US5422982A (en) * 1991-05-02 1995-06-06 Dow Corning Corporation Neural networks containing variable resistors as synapses
US5339211A (en) * 1991-05-02 1994-08-16 Dow Corning Corporation Variable capacitor
US5320868A (en) * 1993-09-13 1994-06-14 Dow Corning Corporation Method of forming SI-O containing coatings
US5403748A (en) * 1993-10-04 1995-04-04 Dow Corning Corporation Detection of reactive gases
DE69510337T2 (de) * 1994-12-22 1999-12-16 Koninkl Philips Electronics Nv Halbleiterspeicheranordnungen und herstellungsverfahren
US5869843A (en) * 1995-06-07 1999-02-09 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
US5831276A (en) 1995-06-07 1998-11-03 Micron Technology, Inc. Three-dimensional container diode for use with multi-state material in a non-volatile memory cell
US6420725B1 (en) * 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US5879955A (en) 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US5616202A (en) * 1995-06-26 1997-04-01 Dow Corning Corporation Enhanced adhesion of H-resin derived silica to gold
US6653733B1 (en) 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US6025220A (en) 1996-06-18 2000-02-15 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
US6337266B1 (en) 1996-07-22 2002-01-08 Micron Technology, Inc. Small electrode for chalcogenide memories
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US6015977A (en) 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6743856B1 (en) 1997-04-21 2004-06-01 Honeywell International Inc. Synthesis of siloxane resins
US6015457A (en) * 1997-04-21 2000-01-18 Alliedsignal Inc. Stable inorganic polymers
US6143855A (en) * 1997-04-21 2000-11-07 Alliedsignal Inc. Organohydridosiloxane resins with high organic content
US5952671A (en) * 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
US6087689A (en) 1997-06-16 2000-07-11 Micron Technology, Inc. Memory cell having a reduced active area and a memory array incorporating the same
JP3211752B2 (ja) * 1997-11-10 2001-09-25 日本電気株式会社 Ｍｉｍ又はｍｉｓ電子源の構造及びその製造方法
US6177199B1 (en) 1999-01-07 2001-01-23 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with low organic content
US6218020B1 (en) 1999-01-07 2001-04-17 Alliedsignal Inc. Dielectric films from organohydridosiloxane resins with high organic content
US6440550B1 (en) * 1999-10-18 2002-08-27 Honeywell International Inc. Deposition of fluorosilsesquioxane films
US6472076B1 (en) 1999-10-18 2002-10-29 Honeywell International Inc. Deposition of organosilsesquioxane films
US6572974B1 (en) 1999-12-06 2003-06-03 The Regents Of The University Of Michigan Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins
US6440837B1 (en) 2000-07-14 2002-08-27 Micron Technology, Inc. Method of forming a contact structure in a semiconductor device
US6563156B2 (en) * 2001-03-15 2003-05-13 Micron Technology, Inc. Memory elements and methods for making same
US7221582B2 (en) * 2003-08-27 2007-05-22 Hewlett-Packard Development Company, L.P. Method and system for controlling write current in magnetic memory
TWI330889B (en) * 2004-05-31 2010-09-21 Ibm Quantum device, quantum logic device, method of driving quantum logic device, and logic circuit constituted of quantum logic device
JP4189395B2 (ja) * 2004-07-28 2008-12-03 シャープ株式会社 不揮発性半導体記憶装置及び読み出し方法
KR100734832B1 (ko) * 2004-12-15 2007-07-03 한국전자통신연구원 금속 산화막의 전류 스위칭을 이용한 정보 저장 장치
JP5157448B2 (ja) * 2005-10-19 2013-03-06 富士通株式会社 抵抗記憶素子及び不揮発性半導体記憶装置
US8283198B2 (en) 2010-05-10 2012-10-09 Micron Technology, Inc. Resistive memory and methods of processing resistive memory
US8525146B2 (en) 2010-12-06 2013-09-03 Hewlett-Packard Development Company, L.P. Electrical circuit component
US20140048799A1 (en) * 2011-02-16 2014-02-20 William Marsh Rice University Invisible/transparent nonvolatile memory
TWI522490B (zh) * 2012-05-10 2016-02-21 應用材料股份有限公司 利用微波電漿化學氣相沈積在基板上沈積膜的方法
EP3238252A4 (de) 2014-12-19 2017-12-27 Hewlett-Packard Enterprise Development LP Ndr-vorrichtung auf der basis von schnellen diffusiven metallatomen
US10636484B2 (en) * 2018-09-12 2020-04-28 Winbond Electronics Corporation Circuit and method for memory operation

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US3761896A (en) * 1972-04-18 1973-09-25 Ibm Memory array of cells containing bistable switchable resistors
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US4849296A (en) * 1987-12-28 1989-07-18 Dow Corning Corporation Multilayer ceramic coatings from metal oxides and hydrogen silsesquioxane resin ceramified in ammonia
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Also Published As

Publication number Publication date
JPH0793468B2 (ja) 1995-10-09
MX9202033A (es) 1992-11-01
EP0512717A3 (en) 1993-06-30
AU641092B2 (en) 1993-09-09
AU1590492A (en) 1992-11-05
US5293335A (en) 1994-03-08
US5283545A (en) 1994-02-01
JPH06291336A (ja) 1994-10-18
EP0512717A2 (de) 1992-11-11
JP2683782B2 (ja) 1997-12-03
KR920022337A (ko) 1992-12-19
TW230277B (de) 1994-09-11
ES2075620T3 (es) 1995-10-01
JPH05347440A (ja) 1993-12-27
US5401981A (en) 1995-03-28
US5312684A (en) 1994-05-17
US5348773A (en) 1994-09-20
BR9201622A (pt) 1992-12-15
CN1029652C (zh) 1995-08-30
KR100200399B1 (ko) 1999-06-15
DE69202815D1 (de) 1995-07-13
EP0512717B1 (de) 1995-06-07
CN1067765A (zh) 1993-01-06
CA2067413A1 (en) 1992-11-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee