DE69012640D1 - Bandlückenschwellenschaltung mit Hysteresis. - Google Patents

Bandlückenschwellenschaltung mit Hysteresis.

Info

Publication number
DE69012640D1
DE69012640D1 DE69012640T DE69012640T DE69012640D1 DE 69012640 D1 DE69012640 D1 DE 69012640D1 DE 69012640 T DE69012640 T DE 69012640T DE 69012640 T DE69012640 T DE 69012640T DE 69012640 D1 DE69012640 D1 DE 69012640D1
Authority
DE
Germany
Prior art keywords
hysteresis
threshold circuit
bandgap
bandgap threshold
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69012640T
Other languages
English (en)
Other versions
DE69012640T2 (de
Inventor
Stephen W Hobrecht
Michael C L Chow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Application granted granted Critical
Publication of DE69012640D1 publication Critical patent/DE69012640D1/de
Publication of DE69012640T2 publication Critical patent/DE69012640T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/2893—Bistables with hysteresis, e.g. Schmitt trigger
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor
DE69012640T 1989-05-08 1990-04-28 Bandlückenschwellenschaltung mit Hysteresis. Expired - Fee Related DE69012640T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/350,354 US5013934A (en) 1989-05-08 1989-05-08 Bandgap threshold circuit with hysteresis

Publications (2)

Publication Number Publication Date
DE69012640D1 true DE69012640D1 (de) 1994-10-27
DE69012640T2 DE69012640T2 (de) 1995-04-27

Family

ID=23376355

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69012640T Expired - Fee Related DE69012640T2 (de) 1989-05-08 1990-04-28 Bandlückenschwellenschaltung mit Hysteresis.

Country Status (5)

Country Link
US (1) US5013934A (de)
EP (1) EP0396996B1 (de)
JP (1) JPH02304606A (de)
KR (1) KR900019366A (de)
DE (1) DE69012640T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5210475B1 (en) * 1989-05-09 1996-04-23 United Technologies Automotive Circuit sensing circuit for use with a current controlling device in a power delivery circuit
US5495155A (en) * 1991-06-28 1996-02-27 United Technologies Corporation Device in a power delivery circuit
JPH05315852A (ja) * 1992-05-12 1993-11-26 Fuji Electric Co Ltd 電流制限回路および電流制限回路用定電圧源
US5327028A (en) * 1992-06-22 1994-07-05 Linfinity Microelectronics, Inc. Voltage reference circuit with breakpoint compensation
US5264784A (en) * 1992-06-29 1993-11-23 Motorola, Inc. Current mirror with enable
US5369319A (en) * 1992-12-21 1994-11-29 Delco Electronics Corporation Comparator having temperature and process compensated hysteresis characteristic
FR2721773B1 (fr) * 1994-06-27 1996-09-06 Sgs Thomson Microelectronics Dispositif de mise en veille partielle d'une source de polarisation et circuit de commande d'une telle source.
US5646520A (en) * 1994-06-28 1997-07-08 National Semiconductor Corporation Methods and apparatus for sensing currents
US5760615A (en) * 1994-07-29 1998-06-02 Sgs-Thomson Microelectronics, Inc. Zero current enable circuit
EP0701190A3 (de) * 1994-09-06 1998-06-17 Motorola, Inc. Bandlücken-CMOS-Vergleichsspannungsschaltung
US5559424A (en) * 1994-10-20 1996-09-24 Siliconix Incorporated Voltage regulator having improved stability
EP0778509B1 (de) * 1995-12-06 2002-05-02 International Business Machines Corporation Temperaturkompensierter Referenzstromgenerator mit Widerständen mit grossen Temperaturkoeffizienten
DE19621110C1 (de) * 1996-05-24 1997-06-12 Siemens Ag Ein-/Ausschaltbare Schaltungsanordnung zur Erzeugung eines Referenzpotentials
DE19624676C1 (de) * 1996-06-20 1997-10-02 Siemens Ag Schaltungsanordnung zur Erzeugung eines Referenzpotentials
FR2834343B1 (fr) * 2001-12-28 2004-04-09 St Microelectronics Sa Detecteur thermique
JP4511150B2 (ja) * 2003-10-20 2010-07-28 ルネサスエレクトロニクス株式会社 定電圧発生回路
DE102004004305B4 (de) * 2004-01-28 2007-05-10 Infineon Technologies Ag Bandabstands-Referenzstromquelle
KR100605258B1 (ko) * 2005-02-28 2006-07-31 삼성전자주식회사 초 저전력 소모 특성을 갖는 기준전압 발생회로
US8536874B1 (en) * 2005-09-30 2013-09-17 Marvell International Ltd. Integrated circuit voltage domain detection system and associated methodology
US7760476B2 (en) * 2007-06-07 2010-07-20 Atmel Corporation Threshold voltage method and apparatus for ESD protection
US8575912B1 (en) * 2012-05-21 2013-11-05 Elite Semiconductor Memory Technology Inc. Circuit for generating a dual-mode PTAT current
US9356569B2 (en) 2013-10-18 2016-05-31 Freescale Semiconductor, Inc. Ready-flag circuitry for differential amplifiers
CN108664072B (zh) * 2018-06-11 2020-05-12 上海艾为电子技术股份有限公司 一种高阶温度补偿带隙基准电路

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4029974A (en) * 1975-03-21 1977-06-14 Analog Devices, Inc. Apparatus for generating a current varying with temperature
JPS59157729A (ja) * 1983-02-26 1984-09-07 Rohm Co Ltd 定電流回路
GB2163614A (en) * 1984-08-22 1986-02-26 Philips Electronic Associated Battery economising circuit
US4677369A (en) * 1985-09-19 1987-06-30 Precision Monolithics, Inc. CMOS temperature insensitive voltage reference
ATE66756T1 (de) * 1985-09-30 1991-09-15 Siemens Ag Trimmbare schaltungsanordnung zur erzeugung einer temperaturunabhaengigen referenzspannung.
US4701639A (en) * 1985-12-09 1987-10-20 National Semiconductor Corporation Threshold detector circuit and method
IT1201848B (it) * 1986-10-02 1989-02-02 Sgs Microelettronica Spa Circuito di interfaccia logica ad alta stabilita' e bassa corrente di riposo
US4808908A (en) * 1988-02-16 1989-02-28 Analog Devices, Inc. Curvature correction of bipolar bandgap references

Also Published As

Publication number Publication date
DE69012640T2 (de) 1995-04-27
US5013934A (en) 1991-05-07
EP0396996B1 (de) 1994-09-21
KR900019366A (ko) 1990-12-24
EP0396996A3 (en) 1990-12-05
EP0396996A2 (de) 1990-11-14
JPH02304606A (ja) 1990-12-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee