DE69113551T2 - Pindiode mit niedriger Anfangsüberspannung. - Google Patents

Pindiode mit niedriger Anfangsüberspannung.

Info

Publication number
DE69113551T2
DE69113551T2 DE69113551T DE69113551T DE69113551T2 DE 69113551 T2 DE69113551 T2 DE 69113551T2 DE 69113551 T DE69113551 T DE 69113551T DE 69113551 T DE69113551 T DE 69113551T DE 69113551 T2 DE69113551 T2 DE 69113551T2
Authority
DE
Germany
Prior art keywords
pin diode
low initial
initial overvoltage
overvoltage
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69113551T
Other languages
English (en)
Other versions
DE69113551D1 (de
Inventor
Robert Pezzani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of DE69113551D1 publication Critical patent/DE69113551D1/de
Application granted granted Critical
Publication of DE69113551T2 publication Critical patent/DE69113551T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/868—PIN diodes
DE69113551T 1990-07-16 1991-07-12 Pindiode mit niedriger Anfangsüberspannung. Expired - Fee Related DE69113551T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9009342A FR2664744B1 (fr) 1990-07-16 1990-07-16 Diode pin a faible surtension initiale.

Publications (2)

Publication Number Publication Date
DE69113551D1 DE69113551D1 (de) 1995-11-09
DE69113551T2 true DE69113551T2 (de) 1996-05-15

Family

ID=9398968

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69113551T Expired - Fee Related DE69113551T2 (de) 1990-07-16 1991-07-12 Pindiode mit niedriger Anfangsüberspannung.

Country Status (5)

Country Link
US (1) US5181083A (de)
EP (1) EP0467803B1 (de)
JP (1) JP3185262B2 (de)
DE (1) DE69113551T2 (de)
FR (1) FR2664744B1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2256744A (en) * 1991-06-11 1992-12-16 Texas Instruments Ltd A monolithic semiconductor component for transient voltage suppression
DE4135259C1 (de) * 1991-10-25 1993-01-07 Semikron Elektronik Gmbh, 8500 Nuernberg, De
US5479031A (en) * 1993-09-10 1995-12-26 Teccor Electronics, Inc. Four layer overvoltage protection device having buried regions aligned with shorting dots to increase the accuracy of overshoot voltage value
DE4423619A1 (de) * 1994-07-06 1996-01-11 Bosch Gmbh Robert Laterale Halbleiterstruktur zur Bildung einer temperaturkompensierten Spannungsbegrenzung
US5780913A (en) * 1995-11-14 1998-07-14 Hamamatsu Photonics K.K. Photoelectric tube using electron beam irradiation diode as anode
US5757065A (en) * 1996-10-04 1998-05-26 Xerox Corporation High voltage integrated circuit diode with a charge injecting node
US5786722A (en) * 1996-11-12 1998-07-28 Xerox Corporation Integrated RF switching cell built in CMOS technology and utilizing a high voltage integrated circuit diode with a charge injecting node
JPH10256574A (ja) 1997-03-14 1998-09-25 Toko Inc ダイオード装置
US5969561A (en) * 1998-03-05 1999-10-19 Diablo Research Company, Llc Integrated circuit having a variable RF resistor
JP2000150918A (ja) * 1998-11-05 2000-05-30 Toko Inc ダイオード装置
JP4653273B2 (ja) * 1999-11-05 2011-03-16 富士電機システムズ株式会社 半導体装置、および、その製造方法
JP2001250962A (ja) * 2000-03-07 2001-09-14 Toko Inc ダイオード
US6429500B1 (en) 2000-09-29 2002-08-06 International Business Machines Corporation Semiconductor pin diode for high frequency applications
DE102004009087B4 (de) * 2004-02-25 2009-04-02 Infineon Technologies Ag Verfahren zum Einstellen der Durchbruchspannung eines Thyristors
US7189610B2 (en) * 2004-10-18 2007-03-13 Semiconductor Components Industries, L.L.C. Semiconductor diode and method therefor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2549614C3 (de) * 1975-11-05 1979-05-10 Nikolai Michailovitsch Belenkov Halbleiterschalter
GB1587540A (en) * 1977-12-20 1981-04-08 Philips Electronic Associated Gate turn-off diodes and arrangements including such diodes
US4267557A (en) * 1978-06-08 1981-05-12 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device
SE414357B (sv) * 1978-08-17 1980-07-21 Asea Ab Overspenningsskydd for skydd av halvledarkomponenter av lageffekttyp
JPS59181679A (ja) * 1983-03-31 1984-10-16 Nippon Denso Co Ltd 半導体装置

Also Published As

Publication number Publication date
FR2664744A1 (fr) 1992-01-17
DE69113551D1 (de) 1995-11-09
JP3185262B2 (ja) 2001-07-09
JPH05167087A (ja) 1993-07-02
FR2664744B1 (fr) 1993-08-06
EP0467803B1 (de) 1995-10-04
EP0467803A1 (de) 1992-01-22
US5181083A (en) 1993-01-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee