KR920010875A - 다층배선의 단차를 완화시키는 방법 - Google Patents

다층배선의 단차를 완화시키는 방법 Download PDF

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Publication number
KR920010875A
KR920010875A KR1019900019046A KR900019046A KR920010875A KR 920010875 A KR920010875 A KR 920010875A KR 1019900019046 A KR1019900019046 A KR 1019900019046A KR 900019046 A KR900019046 A KR 900019046A KR 920010875 A KR920010875 A KR 920010875A
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KR
South Korea
Prior art keywords
conductive layer
multilayer wiring
layer
alleviate
dummy
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Application number
KR1019900019046A
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English (en)
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KR930011462B1 (ko
Inventor
조명석
Original Assignee
정몽헌
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 정몽헌, 현대전자산업 주식회사 filed Critical 정몽헌
Priority to KR1019900019046A priority Critical patent/KR930011462B1/ko
Priority to US07/795,671 priority patent/US5281555A/en
Priority to JP3308707A priority patent/JPH05136132A/ja
Publication of KR920010875A publication Critical patent/KR920010875A/ko
Application granted granted Critical
Publication of KR930011462B1 publication Critical patent/KR930011462B1/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/926—Dummy metallization

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음

Description

다층배선의 단차를 완화시키는 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 의해 단자가 심한 부분에 모조층을 형성하여 단자를 완화시킨 상태의 단면도, 제4A도 및 제4B도는 다층배선 구조의 단차가 심한 부분에 계단식 또는 피라미드식 모조층을 형성한 상태의 단면도.

Claims (5)

  1. 다층배선 형성시 발생되는 단차를 완화시키기 위하여 제1도전층, 제2도전층 및 제3도전층을 순차적으로 형성하고 패턴을 형성하되, 그 측면에 상기 패턴 공정시 단차 완화용 모조층을 경사지게 형성하는 것을 특징으로 하는 다층 배선의 단차를 완화시키는 방법.
  2. 제1항에 있어서, 상기 제1도전층, 제2도전층 및 제3도전층은 각각 절연되어 있고 각각 패턴을 것을 특징으로 하는 다층 배선의 단차를 완화시키는 방법.
  3. 제1항에 있어서, 상기 모조층은 상기 제1도전층으로된 제1모조층, 제2도전층으로된 제2모조층 및 제3도전층으로된 제3모조층으로 각각 도전층 패턴시 형성하는 것을 특징으로 하는 다층 배선의 단차를 완화시키는 방법.
  4. 제1 또는 제3항에 있어서, 상기 모조층은 계단식 또는 피라밋식으로 형성하는 것을 특징으로 하는 다층 배선의 단차를 완화시키는 방법.
  5. 제1항에 있어서, 상기 모조층은 실리콘 기판에 접속시키는 것을 특징으로 하는 다층 배선의 단차를 완화시키는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019900019046A 1990-11-23 1990-11-23 다층배선의 단차를 완화시키는 방법 KR930011462B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019900019046A KR930011462B1 (ko) 1990-11-23 1990-11-23 다층배선의 단차를 완화시키는 방법
US07/795,671 US5281555A (en) 1990-11-23 1991-11-21 Method for alleviating the step difference in a semiconductor and a semiconductor device
JP3308707A JPH05136132A (ja) 1990-11-23 1991-11-25 半導体素子の多層構造の段差を緩和させる方法及び多層構造の段差緩和用ダミー層を備えた半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900019046A KR930011462B1 (ko) 1990-11-23 1990-11-23 다층배선의 단차를 완화시키는 방법

Publications (2)

Publication Number Publication Date
KR920010875A true KR920010875A (ko) 1992-06-27
KR930011462B1 KR930011462B1 (ko) 1993-12-08

Family

ID=19306431

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900019046A KR930011462B1 (ko) 1990-11-23 1990-11-23 다층배선의 단차를 완화시키는 방법

Country Status (3)

Country Link
US (1) US5281555A (ko)
JP (1) JPH05136132A (ko)
KR (1) KR930011462B1 (ko)

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US5494853A (en) * 1994-07-25 1996-02-27 United Microelectronics Corporation Method to solve holes in passivation by metal layout
TW272310B (en) * 1994-11-09 1996-03-11 At & T Corp Process for producing multi-level metallization in an integrated circuit
US5924006A (en) * 1994-11-28 1999-07-13 United Microelectronics Corp. Trench surrounded metal pattern
JP3249317B2 (ja) * 1994-12-12 2002-01-21 富士通株式会社 パターン作成方法
US5698902A (en) * 1994-12-19 1997-12-16 Matsushita Electric Industrial Co., Ltd. Semiconductor device having finely configured gate electrodes
JP3616179B2 (ja) * 1995-11-09 2005-02-02 株式会社ルネサステクノロジ 半導体記憶装置
US5915201A (en) * 1995-11-22 1999-06-22 United Microelectronics Corporation Trench surrounded metal pattern
TW388912B (en) * 1996-04-22 2000-05-01 Toshiba Corp Semiconductor device and method of manufacturing the same
JP2923912B2 (ja) * 1996-12-25 1999-07-26 日本電気株式会社 半導体装置
US6077778A (en) * 1997-04-17 2000-06-20 Taiwan Semiconductor Manufacturing Company Method of improving refresh time in DRAM products
JP4363679B2 (ja) * 1997-06-27 2009-11-11 聯華電子股▲ふん▼有限公司 半導体装置の製造方法
US6309956B1 (en) 1997-09-30 2001-10-30 Intel Corporation Fabricating low K dielectric interconnect systems by using dummy structures to enhance process
JP3132451B2 (ja) * 1998-01-21 2001-02-05 日本電気株式会社 半導体装置およびその製造方法
JP3070574B2 (ja) * 1998-04-01 2000-07-31 日本電気株式会社 半導体記憶装置及びその製作方法
JP3575988B2 (ja) * 1998-05-28 2004-10-13 沖電気工業株式会社 半導体記憶装置
KR20000015003A (ko) * 1998-08-26 2000-03-15 윤종용 이중 메탈선 배선 구조를 갖는 반도체 장치
US6483144B2 (en) * 1999-11-30 2002-11-19 Agere Systems Guardian Corp. Semiconductor device having self-aligned contact and landing pad structure and method of forming same
TW494565B (en) * 2000-06-20 2002-07-11 Infineon Technologies Corp Reduction of topography between support regions and array regions of memory devices
JP4481464B2 (ja) * 2000-09-20 2010-06-16 株式会社東芝 半導体記憶装置及びその製造方法
US7521741B2 (en) * 2006-06-30 2009-04-21 Taiwan Semiconductor Manufacturing Company, Ltd. Shielding structures for preventing leakages in high voltage MOS devices
JP2009135223A (ja) * 2007-11-29 2009-06-18 Oki Semiconductor Co Ltd 半導体装置およびその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS604241A (ja) * 1983-06-22 1985-01-10 Nec Corp 半導体装置
JPS6079744A (ja) * 1983-10-05 1985-05-07 Nec Corp 半導体装置
US4617730A (en) * 1984-08-13 1986-10-21 International Business Machines Corporation Method of fabricating a chip interposer
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US5032890A (en) * 1988-01-30 1991-07-16 Kabushiki Kaisha Toshiba Semiconductor integrated circuit with dummy patterns
JPH01274453A (ja) * 1988-04-26 1989-11-02 Toshiba Corp 半導体装置及びその製造方法
US4916514A (en) * 1988-05-31 1990-04-10 Unisys Corporation Integrated circuit employing dummy conductors for planarity
JPH02106968A (ja) * 1988-10-17 1990-04-19 Hitachi Ltd 半導体集積回路装置及びその形成方法
JPH04162773A (ja) * 1990-10-26 1992-06-08 Fujitsu Ltd 半導体装置

Also Published As

Publication number Publication date
US5281555A (en) 1994-01-25
KR930011462B1 (ko) 1993-12-08
JPH05136132A (ja) 1993-06-01

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