KR920022456A - 동 배선의 형성방법 - Google Patents

동 배선의 형성방법 Download PDF

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Publication number
KR920022456A
KR920022456A KR1019920008815A KR920008815A KR920022456A KR 920022456 A KR920022456 A KR 920022456A KR 1019920008815 A KR1019920008815 A KR 1019920008815A KR 920008815 A KR920008815 A KR 920008815A KR 920022456 A KR920022456 A KR 920022456A
Authority
KR
South Korea
Prior art keywords
copper
copper wiring
layer
form copper
forming
Prior art date
Application number
KR1019920008815A
Other languages
English (en)
Inventor
신고 가도무라
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR920022456A publication Critical patent/KR920022456A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

내용 없음.

Description

동 배선의 형성방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 내지 제7도는 본원 발명의 실시예의 각 공정을 나타내는 단면도.

Claims (1)

  1. 동층표면에 황화동층을 형성하는 공정과, 상기 황화동층과 동층을 에칭하여 패턴화하는 공정과, 패턴화된 상기 황화동층을 환원하여 동금속으로 하는 환원공정과, 상기 환원공정에 연속하여 층간막을 형성하는 공정을 구비하는 것을 특징으로 하는 동배선(銅配線)의 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920008815A 1991-05-31 1992-05-25 동 배선의 형성방법 KR920022456A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-129,150 1991-05-31
JP3129150A JPH04354133A (ja) 1991-05-31 1991-05-31 銅配線の形成方法

Publications (1)

Publication Number Publication Date
KR920022456A true KR920022456A (ko) 1992-12-19

Family

ID=15002380

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920008815A KR920022456A (ko) 1991-05-31 1992-05-25 동 배선의 형성방법

Country Status (3)

Country Link
US (1) US5281304A (ko)
JP (1) JPH04354133A (ko)
KR (1) KR920022456A (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3381076B2 (ja) * 1992-11-24 2003-02-24 ソニー株式会社 ドライエッチング方法
JP3236225B2 (ja) * 1996-03-06 2001-12-10 松下電器産業株式会社 半導体装置及びその製造方法
KR19980070753A (ko) * 1997-01-28 1998-10-26 모리시타 요이치 반도체 소자 및 그 제조 공정
US6020261A (en) * 1999-06-01 2000-02-01 Motorola, Inc. Process for forming high aspect ratio circuit features
US6159857A (en) * 1999-07-08 2000-12-12 Taiwan Semiconductor Manufacturing Company Robust post Cu-CMP IMD process
JP4554011B2 (ja) 1999-08-10 2010-09-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置の製造方法
US6123088A (en) * 1999-12-20 2000-09-26 Chartered Semiconducotor Manufacturing Ltd. Method and cleaner composition for stripping copper containing residue layers
JP2002350673A (ja) * 2001-05-23 2002-12-04 Nippon Sheet Glass Co Ltd 光モジュールおよびその組立て方法
US6798068B2 (en) * 2002-11-26 2004-09-28 Advanced Micro Devices, Inc. MOCVD formation of Cu2S
US6787458B1 (en) * 2003-07-07 2004-09-07 Advanced Micro Devices, Inc. Polymer memory device formed in via opening
US7573133B2 (en) * 2003-12-09 2009-08-11 Uri Cohen Interconnect structures and methods for their fabrication
US7709958B2 (en) 2004-06-18 2010-05-04 Uri Cohen Methods and structures for interconnect passivation
JP5481179B2 (ja) * 2009-12-15 2014-04-23 Ｄｏｗａメタルテック株式会社 Ｃｕ系材料のＳｎめっき層の剥離方法
JP2013222760A (ja) * 2012-04-13 2013-10-28 Panasonic Liquid Crystal Display Co Ltd 銅配線形成方法、表示装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4466859A (en) * 1983-05-25 1984-08-21 Psi Star, Inc. Process for etching copper
JPS63144592A (ja) * 1986-12-09 1988-06-16 セイコーインスツルメンツ株式会社 精密プリント配線基板の製造方法
US4913769A (en) * 1987-08-24 1990-04-03 Hitachi, Ltd. Process for preparing superconductive wiring board

Also Published As

Publication number Publication date
US5281304A (en) 1994-01-25
JPH04354133A (ja) 1992-12-08

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