KR910019048A - 반도체 집적 회로 장치 - Google Patents

반도체 집적 회로 장치 Download PDF

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Publication number
KR910019048A
KR910019048A KR1019910005410A KR910005410A KR910019048A KR 910019048 A KR910019048 A KR 910019048A KR 1019910005410 A KR1019910005410 A KR 1019910005410A KR 910005410 A KR910005410 A KR 910005410A KR 910019048 A KR910019048 A KR 910019048A
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KR
South Korea
Prior art keywords
circuit
integrated circuit
semiconductor integrated
circuit device
reference voltage
Prior art date
Application number
KR1019910005410A
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English (en)
Other versions
KR100210716B1 (ko
Inventor
요시까즈 가나이시
Original Assignee
오오가 노리오
소니 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오오가 노리오, 소니 가부시끼가이샤 filed Critical 오오가 노리오
Publication of KR910019048A publication Critical patent/KR910019048A/ko
Application granted granted Critical
Publication of KR100210716B1 publication Critical patent/KR100210716B1/ko

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

내용 없음

Description

반도체 집적 회로 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 반도체 집적 회로 장치의 한 예의 블럭도.

Claims (1)

  1. 내부 회로와 동작시에 상기 내부 회로에 증폭 회로를 개재해서 기준 전압을 공급함과 함께 대기시에 오프되는 제1의 기준 전압 발생 회로와, 최소한 대기시에 상기한 내부 회로에 전압을 공급하는 전원 전압 변환 회로와, 대기시에 동작시에 이르는 과도 기간중으로 상기 증폭 회로를 구성하는 제2의 기준 전압 발생 회로를 갖는 것을 특징으로 하는 반도체 집적 회로 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910005410A 1990-04-06 1991-04-04 반도체 집적 회로 장치 KR100210716B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP90426 1981-06-12
JP2090426A JPH03290895A (ja) 1990-04-06 1990-04-06 半導体集積回路装置

Publications (2)

Publication Number Publication Date
KR910019048A true KR910019048A (ko) 1991-11-30
KR100210716B1 KR100210716B1 (ko) 1999-07-15

Family

ID=13998281

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910005410A KR100210716B1 (ko) 1990-04-06 1991-04-04 반도체 집적 회로 장치

Country Status (3)

Country Link
US (1) US5280455A (ko)
JP (1) JPH03290895A (ko)
KR (1) KR100210716B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
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KR100891909B1 (ko) * 2002-08-28 2009-04-06 후지쯔 마이크로일렉트로닉스 가부시키가이샤 반도체 장치

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JP3645593B2 (ja) * 1994-09-09 2005-05-11 株式会社ルネサステクノロジ 半導体集積回路装置
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JP3175521B2 (ja) * 1995-01-27 2001-06-11 日本電気株式会社 シリコン・オン・インシュレータ半導体装置及びバイアス電圧発生回路
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US5552698A (en) * 1995-06-29 1996-09-03 United Microelectronics Corp. Voltage supply system for IC chips
US5619137A (en) * 1996-02-12 1997-04-08 Allegro Microsystems, Inc. Chopped low power magnetic-field detector with hysteresis memory
JP3533306B2 (ja) 1996-04-02 2004-05-31 株式会社東芝 半導体集積回路装置
US5841724A (en) * 1997-06-12 1998-11-24 Enable Semiconductor, Inc. Voltage source and memory-voltage switch in a memory chip
KR100272163B1 (ko) * 1997-12-30 2000-11-15 윤종용 대기용어레이전압발생기를갖는반도체메모리장치
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US6661279B2 (en) * 2001-04-11 2003-12-09 Kabushiki Kaisha Toshiba Semiconductor integrated circuit which outputs first internal power supply voltage and second internal power supply voltage lower than first internal supply power voltage
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US7061049B2 (en) * 2001-06-12 2006-06-13 Kabushiki Kaisha Toshiba Semiconductor device using SOI device and semiconductor integrated circuit using the semiconductor device
KR20030002769A (ko) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 반도체 소자의 동작전압 공급회로
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KR100555509B1 (ko) 2003-07-23 2006-03-03 삼성전자주식회사 선택적 전압 레퍼런스로 소모 전력을 절감하는 내부 전압변환기, 이를 구비한 반도체 장치 및 그 방법
KR100560945B1 (ko) * 2003-11-26 2006-03-14 매그나칩 반도체 유한회사 온-칩 기준전압 발생장치를 구비하는 반도체 칩
JP2005190381A (ja) * 2003-12-26 2005-07-14 Ricoh Co Ltd 定電圧電源
KR100610020B1 (ko) * 2005-01-13 2006-08-08 삼성전자주식회사 반도체 메모리 장치에서의 셀 파워 스위칭 회로와 그에따른 셀 파워 전압 인가방법
KR100727320B1 (ko) * 2005-07-15 2007-06-12 삼성전자주식회사 반도체 장치의 전원공급 회로 및 전원공급 방법
JP4528254B2 (ja) * 2005-11-25 2010-08-18 富士通セミコンダクター株式会社 電源電圧検出回路
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KR100780623B1 (ko) * 2006-06-30 2007-11-29 주식회사 하이닉스반도체 반도체 소자의 내부전압 생성장치
KR100806120B1 (ko) * 2006-08-22 2008-02-22 삼성전자주식회사 내부 전원전압 발생회로 및 내부 전원전압 발생방법
JP4756701B2 (ja) * 2006-12-13 2011-08-24 三洋電機株式会社 電源電圧検出回路
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JP5511166B2 (ja) * 2008-09-10 2014-06-04 セイコーインスツル株式会社 半導体装置
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JP5961374B2 (ja) * 2011-12-09 2016-08-02 ラピスセミコンダクタ株式会社 電源装置、電源装置の制御方法及び電子機器
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KR102106588B1 (ko) * 2013-10-28 2020-05-04 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것을 포함하는 데이터 저장 장치
US10401886B1 (en) * 2014-07-30 2019-09-03 Cirrus Logic, Inc. Systems and methods for providing an auto-calibrated voltage reference
US10386875B2 (en) * 2017-04-27 2019-08-20 Pixart Imaging Inc. Bandgap reference circuit and sensor chip using the same
JP6673948B2 (ja) 2018-01-29 2020-04-01 ファナック株式会社 電源制御装置および電源制御装置の制御方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100891909B1 (ko) * 2002-08-28 2009-04-06 후지쯔 마이크로일렉트로닉스 가부시키가이샤 반도체 장치

Also Published As

Publication number Publication date
KR100210716B1 (ko) 1999-07-15
JPH03290895A (ja) 1991-12-20
US5280455A (en) 1994-01-18

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