KR910001945A - 반도체장치 - Google Patents

반도체장치 Download PDF

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Publication number
KR910001945A
KR910001945A KR1019900009459A KR900009459A KR910001945A KR 910001945 A KR910001945 A KR 910001945A KR 1019900009459 A KR1019900009459 A KR 1019900009459A KR 900009459 A KR900009459 A KR 900009459A KR 910001945 A KR910001945 A KR 910001945A
Authority
KR
South Korea
Prior art keywords
standard
cell
wiring
semiconductor device
layer
Prior art date
Application number
KR1019900009459A
Other languages
English (en)
Inventor
히로시 하타다
소지로 모리
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR910001945A publication Critical patent/KR910001945A/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

내용 없음

Description

반도체장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1의 실시예에 관계되는 반도체장치의 평면도.
제2도 내지 제7도는 본 발명의 변형예에 관계되는 각각의 스탠다드셀의 평면도.

Claims (4)

  1. 스탠다드셀 방식에서의 자동배치 배선에 의해서 스탠다드셀간 배선(9, 10)의 접속을 행한 반도체장치에 있어서, 스탠다드 셀(1)면상에서 상기 스탠다드셀간 배선끼리 접속되어 있는 것을 특징으로 하는 반도체장치.
  2. 제1항에 있어서, 상기 스탠다드 셀간 배선(9, 10)이 스탠다드 셀내 배선(3, 4)과 다른 도전층으로 이루어진 것을 특징으로 하는 반도체장치.
  3. 제2항에 있어서, 상기 스탠다드 셀간 배선을 구성하는 도전층이 제3층(9)과, 제4층(10)의 도전층으로 이루어지고, 상기 스탠다드 셀내 배선을 구성하는 도전층이 제1층(2)과 제2층(3)으로 이루어진 것을 특징으로 하는 반도체장치.
  4. 제1항에 있어서, 상기 스탠다드 셀에서, 이 스탠다드 셀내의 능동소자에 대해서 개공되어 있는 바이어홀(5)이 소정의 폭을 가지는 직선상에 설치된 바이어홀 개공영역(4)내에 각각 개공되어 있는 것을 특징으로 하는 반도체장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900009459A 1989-06-26 1990-06-26 반도체장치 KR910001945A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-163197 1989-06-26
JP1163197A JPH0329342A (ja) 1989-06-26 1989-06-26 半導体装置

Publications (1)

Publication Number Publication Date
KR910001945A true KR910001945A (ko) 1991-01-31

Family

ID=15769122

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900009459A KR910001945A (ko) 1989-06-26 1990-06-26 반도체장치

Country Status (4)

Country Link
US (1) US5111271A (ko)
EP (1) EP0405460A3 (ko)
JP (1) JPH0329342A (ko)
KR (1) KR910001945A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100437344B1 (ko) * 2001-08-20 2004-06-25 한국에너지기술연구원 먼지가 내부로 침투하는 것을 방지하는 표면층을 구비한 집진필터와 그 제조방법 및 장치

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JP3027990B2 (ja) * 1991-03-18 2000-04-04 富士通株式会社 半導体装置の製造方法
US5576554A (en) * 1991-11-05 1996-11-19 Monolithic System Technology, Inc. Wafer-scale integrated circuit interconnect structure architecture
US5498990A (en) * 1991-11-05 1996-03-12 Monolithic System Technology, Inc. Reduced CMOS-swing clamping circuit for bus lines
US5831467A (en) * 1991-11-05 1998-11-03 Monolithic System Technology, Inc. Termination circuit with power-down mode for use in circuit module architecture
DE69226150T2 (de) * 1991-11-05 1999-02-18 Hsu Fu Chieh Redundanzarchitektur für Schaltungsmodul
JPH08500687A (ja) * 1992-08-10 1996-01-23 モノリシック・システム・テクノロジー・インコーポレイテッド ウェハ規模の集積化のためのフォルトトレラントな高速度のバス装置及びバスインタフェース
US5536955A (en) * 1993-03-29 1996-07-16 Toppan Electronics (Usa) Inc. Electronic devices for use in generating integrated circuit structures and method therefor
US5440153A (en) * 1994-04-01 1995-08-08 United Technologies Corporation Array architecture with enhanced routing for linear asics
JP3185540B2 (ja) * 1994-06-10 2001-07-11 松下電器産業株式会社 半導体集積回路
US5655113A (en) 1994-07-05 1997-08-05 Monolithic System Technology, Inc. Resynchronization circuit for a memory system and method of operating same
US5742099A (en) * 1994-09-29 1998-04-21 Intel Corporation Power bus for an integrated circuit including end-to-end arranged segments providing power and ground
US5789807A (en) * 1996-10-15 1998-08-04 International Business Machines Corporation On-chip power distribution for improved decoupling
US5894142A (en) * 1996-12-11 1999-04-13 Hewlett-Packard Company Routing for integrated circuits
US6025616A (en) * 1997-06-25 2000-02-15 Honeywell Inc. Power distribution system for semiconductor die
JP3349989B2 (ja) * 1999-06-18 2002-11-25 エヌイーシーマイクロシステム株式会社 半導体集積回路装置及びそのレイアウト方法及び装置
US6892370B2 (en) * 2003-04-02 2005-05-10 Silicon Design Systems Ltd. Computerized standard cell library for designing integrated circuits (ICs) with high metal layer intra cell signal wiring, and ICs including same
US8816403B2 (en) * 2011-09-21 2014-08-26 Taiwan Semiconductor Manufacturing Co., Ltd. Efficient semiconductor device cell layout utilizing underlying local connective features

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JPS51147982A (en) * 1975-06-13 1976-12-18 Nec Corp Integrated circuit
JPS5319775A (en) * 1976-08-09 1978-02-23 Hitachi Ltd Large scale integrated circuit
US4969029A (en) * 1977-11-01 1990-11-06 Fujitsu Limited Cellular integrated circuit and hierarchial method
JPS5878450A (ja) * 1981-11-04 1983-05-12 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路装置
JPS5887854A (ja) * 1981-11-20 1983-05-25 Nec Corp マスタスライス方式ｌｓｉ基板
JPS5911670A (ja) * 1982-07-12 1984-01-21 Toshiba Corp 半導体集積回路装置
JPS607147A (ja) * 1983-06-24 1985-01-14 Mitsubishi Electric Corp 半導体装置
JPS61292341A (ja) * 1985-06-20 1986-12-23 Toshiba Corp 半導体集積回路
JPS628538A (ja) * 1985-07-05 1987-01-16 Hitachi Ltd 半導体集積回路装置
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JPS62177940A (ja) * 1986-01-31 1987-08-04 Toshiba Corp 半導体論理集積回路装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100437344B1 (ko) * 2001-08-20 2004-06-25 한국에너지기술연구원 먼지가 내부로 침투하는 것을 방지하는 표면층을 구비한 집진필터와 그 제조방법 및 장치

Also Published As

Publication number Publication date
EP0405460A2 (en) 1991-01-02
EP0405460A3 (en) 1991-12-27
US5111271A (en) 1992-05-05
JPH0329342A (ja) 1991-02-07

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