KR900017205A - 반도체소자 및 그 제조방법 - Google Patents

반도체소자 및 그 제조방법 Download PDF

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Publication number
KR900017205A
KR900017205A KR1019900004976A KR900004976A KR900017205A KR 900017205 A KR900017205 A KR 900017205A KR 1019900004976 A KR1019900004976 A KR 1019900004976A KR 900004976 A KR900004976 A KR 900004976A KR 900017205 A KR900017205 A KR 900017205A
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South Korea
Prior art keywords
film
metal
forming
oxide
semiconductor device
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Application number
KR1019900004976A
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English (en)
Inventor
시또 데루오
Original Assignee
고스기 노부미쓰
오끼뎅끼고오교오 가부시끼가이샤
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Publication of KR900017205A publication Critical patent/KR900017205A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

내용 없음

Description

반도체소자 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이 발명의 제1의 실시예를 표시하는 구조단면도.
제2도는 이 발명의 제1의 실시예를 표시하는 공정단면도.
제3도는 이 발명의 제2의 실시예를 표시하는 공정단면도.

Claims (3)

  1. 채널영역을 끼고 소스/드레인영역이 형성되어 채널영역의 표면상에는 게이트절연막을 끼고 게이트전극이 형성된 반도체소자에 있어서, 소스/드레인영역상에 금속실리사이드막이 형성되고 아울러 게이트절연막의 적어도 일부로서 금속산화막이 형성된 것을 특징으로 하는 반도체소자.
  2. 반도체기판의 표면에 금속막을 형성하고 다시금 그위에 산화보혼막패턴을 형성하는 공정과 그 산화보호막패턴을 마스크로하여 상기 금속막을 선택적으로 산화하여 금속막의 일부를 게이트절연막으로서의 금속산화막으로 변환하는 공정과 그후 상기 산화보호막 패턴으로 덮인 상기 금속막을 반도체기판과 반응시켜 금속실리사이드막을 형성하는 공정과 그후 상기 게이트절연막으로서의 금속산화막상에 게이트전극을 형성하여 다시금 상기 금속 실리사이드막하의 기판내에 소스/드레인영역을 형성하는 공정과를 구비하여 이루어지는 반도체소자의 제조방법.
  3. 절연기판상에 게이트전극을 헝성후 상기 기판 전면에 금속얇은막, 산화방지막을 순차 적층하는 공정과 상기 게이트전극상의 산화방지막을 에치백에 의하여 자기정합적으로 제거하여 금속얇은 막을 노출시키는 공정과 상기 산화방지막을 마스크로하여 노출한 금속얇은막을 산화하여 금소산화막으로하는 공정과 상기 산화방지막을 제거후 전면에 반도체층을 형성하는 공정과 열처리에 의하여 상기 반도체층과 상기 산화되지 않은 금속막과를 반응시켜 금속실리 사이드층을 형성하는 공정과를 가지는 것을 특징으로 하는 반도체소자의 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900004976A 1989-04-17 1990-04-11 반도체소자 및 그 제조방법 KR900017205A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1095161A JPH02273934A (ja) 1989-04-17 1989-04-17 半導体素子およびその製造方法
JP1-95161 1989-04-17

Publications (1)

Publication Number Publication Date
KR900017205A true KR900017205A (ko) 1990-11-15

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900004976A KR900017205A (ko) 1989-04-17 1990-04-11 반도체소자 및 그 제조방법

Country Status (3)

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US (1) US5134451A (ko)
JP (1) JPH02273934A (ko)
KR (1) KR900017205A (ko)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2678091B2 (ja) * 1990-12-19 1997-11-17 松下電子工業株式会社 半導体装置
JP2873632B2 (ja) 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
EP0550255B1 (en) * 1991-12-31 1998-03-11 STMicroelectronics, Inc. Transistor spacer structure
JPH05315608A (ja) * 1992-05-13 1993-11-26 Tadahiro Omi 半導体装置
US5187638A (en) * 1992-07-27 1993-02-16 Micron Technology, Inc. Barrier layers for ferroelectric and pzt dielectric on silicon
US6531730B2 (en) * 1993-08-10 2003-03-11 Micron Technology, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US6030847A (en) * 1993-04-02 2000-02-29 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
US6791131B1 (en) * 1993-04-02 2004-09-14 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
US5478772A (en) * 1993-04-02 1995-12-26 Micron Technology, Inc. Method for forming a storage cell capacitor compatible with high dielectric constant materials
US5381302A (en) * 1993-04-02 1995-01-10 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same
US5392189A (en) 1993-04-02 1995-02-21 Micron Semiconductor, Inc. Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same
JP2734961B2 (ja) * 1993-05-24 1998-04-02 日本電気株式会社 電界効果型トランジスタとその製造方法
US5990516A (en) 1994-09-13 1999-11-23 Kabushiki Kaisha Toshiba MOSFET with a thin gate insulating film
KR19990014155A (ko) * 1997-07-24 1999-02-25 윌리엄 비. 켐플러 고 유전율 실리케이트 게이트 유전체
US6861356B2 (en) 1997-11-05 2005-03-01 Tokyo Electron Limited Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
US7829144B2 (en) * 1997-11-05 2010-11-09 Tokyo Electron Limited Method of forming a metal film for electrode
JPH11195621A (ja) * 1997-11-05 1999-07-21 Tokyo Electron Ltd バリアメタル、その形成方法、ゲート電極及びその形成方法
US6603180B1 (en) * 1997-11-28 2003-08-05 Advanced Micro Devices, Inc. Semiconductor device having large-area silicide layer and process of fabrication thereof
US6121094A (en) * 1998-07-21 2000-09-19 Advanced Micro Devices, Inc. Method of making a semiconductor device with a multi-level gate structure
US6107667A (en) * 1998-09-10 2000-08-22 Advanced Micro Devices, Inc. MOS transistor with low-k spacer to suppress capacitive coupling between gate and source/drain extensions
WO2000036652A2 (en) * 1998-12-15 2000-06-22 Conexant Systems, Inc. Method of manufacturing a gate electrode
US6528856B1 (en) * 1998-12-15 2003-03-04 Intel Corporation High dielectric constant metal oxide gate dielectrics
US6312378B1 (en) * 1999-06-03 2001-11-06 Cardiac Intelligence Corporation System and method for automated collection and analysis of patient information retrieved from an implantable medical device for remote patient care
JP2001077108A (ja) 1999-08-31 2001-03-23 Nec Corp 半導体装置及び複合酸化物薄膜の製造方法
WO2001041191A2 (en) * 1999-10-27 2001-06-07 Semitool, Inc. Method and apparatus for forming an oxidized structure on a microelectronic workpiece
KR20010059854A (ko) * 1999-12-30 2001-07-06 박종섭 반도체장치 및 그 제조방법
US6300203B1 (en) * 2000-10-05 2001-10-09 Advanced Micro Devices, Inc. Electrolytic deposition of dielectric precursor materials for use in in-laid gate MOS transistors
US6465853B1 (en) * 2001-05-08 2002-10-15 Motorola, Inc. Method for making semiconductor device
JP3581354B2 (ja) * 2002-03-27 2004-10-27 株式会社東芝 電界効果トランジスタ
US6794721B2 (en) * 2002-12-23 2004-09-21 International Business Machines Corporation Integration system via metal oxide conversion
DE102009009557A1 (de) * 2009-02-19 2010-09-02 W.C. Heraeus Gmbh Elektrisch leitende Materialien, Zuleitungen und Kabel für Stimulationselektroden
US8993058B2 (en) 2012-08-28 2015-03-31 Applied Materials, Inc. Methods and apparatus for forming tantalum silicate layers on germanium or III-V semiconductor devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5362987A (en) * 1976-11-17 1978-06-05 Matsushita Electric Ind Co Ltd Production of mos type semiconductor device
JPS5546535A (en) * 1978-09-28 1980-04-01 Chiyou Lsi Gijutsu Kenkyu Kumiai Method of manufacturing semiconductor device
US4384301A (en) * 1979-11-07 1983-05-17 Texas Instruments Incorporated High performance submicron metal-oxide-semiconductor field effect transistor device structure
DE3211761A1 (de) * 1982-03-30 1983-10-06 Siemens Ag Verfahren zum herstellen von integrierten mos-feldeffekttransistorschaltungen in siliziumgate-technologie mit silizid beschichteten diffusionsgebieten als niederohmige leiterbahnen
JPS59210671A (ja) * 1983-05-14 1984-11-29 Nippon Telegr & Teleph Corp <Ntt> シリコン薄膜電界効果トランジスタ
JPS6088474A (ja) * 1983-10-21 1985-05-18 Seiko Epson Corp 半導体装置
FR2555365B1 (fr) * 1983-11-22 1986-08-29 Efcis Procede de fabrication de circuit integre avec connexions de siliciure de tantale et circuit integre realise selon ce procede
US4746219A (en) * 1986-03-07 1988-05-24 Texas Instruments Incorporated Local interconnect
US4735680A (en) * 1986-11-17 1988-04-05 Yen Yung Chau Method for the self-aligned silicide formation in IC fabrication
JPS63140577A (ja) * 1986-12-02 1988-06-13 Toshiba Corp 電界効果トランジスタ
US4866491A (en) * 1987-02-06 1989-09-12 International Business Machines Corporation Heterojunction field effect transistor having gate threshold voltage capability

Also Published As

Publication number Publication date
US5134451A (en) 1992-07-28
JPH02273934A (ja) 1990-11-08

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