KR900007108A - 압접형 반도체장치 - Google Patents

압접형 반도체장치

Info

Publication number
KR900007108A
KR900007108A KR1019890015033A KR890015033A KR900007108A KR 900007108 A KR900007108 A KR 900007108A KR 1019890015033 A KR1019890015033 A KR 1019890015033A KR 890015033 A KR890015033 A KR 890015033A KR 900007108 A KR900007108 A KR 900007108A
Authority
KR
South Korea
Prior art keywords
press
semiconductor device
type semiconductor
type
semiconductor
Prior art date
Application number
KR1019890015033A
Other languages
English (en)
Other versions
KR930007517B1 (ko
Inventor
히데오 마츠다
마사미 이와사키
미츠히코 기타가와
요시오 요코다
가즈오 와타누키
다카시 후지와라
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR900007108A publication Critical patent/KR900007108A/ko
Application granted granted Critical
Publication of KR930007517B1 publication Critical patent/KR930007517B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10157—Shape being other than a cuboid at the active surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H01L2924/13033—TRIAC - Triode for Alternating Current - A bidirectional switching device containing two thyristor structures with common gate contact
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
  • Bipolar Transistors (AREA)
KR1019890015033A 1988-10-19 1989-10-19 압접형 반도체장치 KR930007517B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63263455A JP2739970B2 (ja) 1988-10-19 1988-10-19 圧接型半導体装置
JP63-263455 1988-10-19

Publications (2)

Publication Number Publication Date
KR900007108A true KR900007108A (ko) 1990-05-09
KR930007517B1 KR930007517B1 (ko) 1993-08-12

Family

ID=17389752

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890015033A KR930007517B1 (ko) 1988-10-19 1989-10-19 압접형 반도체장치

Country Status (4)

Country Link
US (1) US4996586A (ko)
EP (1) EP0365007A3 (ko)
JP (1) JP2739970B2 (ko)
KR (1) KR930007517B1 (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3258200B2 (ja) * 1995-05-31 2002-02-18 株式会社東芝 圧接型半導体装置
US5210601A (en) * 1989-10-31 1993-05-11 Kabushiki Kaisha Toshiba Compression contacted semiconductor device and method for making of the same
JP2755761B2 (ja) * 1990-01-26 1998-05-25 株式会社東芝 半導体装置
JP3137375B2 (ja) * 1990-09-20 2001-02-19 株式会社東芝 圧接型半導体装置
GB9109542D0 (en) * 1991-05-02 1991-06-26 Semitron Ind Ltd Semiconductor device assembly
JP2804216B2 (ja) * 1993-06-22 1998-09-24 株式会社日立製作所 ゲートターンオフサイリスタ
JP3471880B2 (ja) * 1994-02-23 2003-12-02 三菱電機株式会社 圧接型半導体装置
JPH08242009A (ja) * 1994-12-02 1996-09-17 Eurec Europ G Fur Leistungshalbleiter Mbh & Co Kg パワー半導体デバイス
JP3588503B2 (ja) * 1995-06-20 2004-11-10 株式会社東芝 圧接型半導体装置
US5652467A (en) * 1995-07-27 1997-07-29 Hitachi, Ltd. Semiconductor device and package structure therefore and power inverter having semiconductor device
JPH09135023A (ja) * 1995-11-08 1997-05-20 Toshiba Corp 圧接型半導体装置
JP3018971B2 (ja) * 1995-12-18 2000-03-13 富士電機株式会社 半導体装置
US6335548B1 (en) * 1999-03-15 2002-01-01 Gentex Corporation Semiconductor radiation emitter package
US6521916B2 (en) * 1999-03-15 2003-02-18 Gentex Corporation Radiation emitter device having an encapsulant with different zones of thermal conductivity
DE10041112B4 (de) 2000-08-22 2006-05-24 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Isolierelement
JP3954314B2 (ja) * 2001-01-23 2007-08-08 株式会社東芝 圧接型半導体装置
US6639360B2 (en) 2001-01-31 2003-10-28 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
US7075112B2 (en) * 2001-01-31 2006-07-11 Gentex Corporation High power radiation emitter device and heat dissipating package for electronic components
EP1298733A1 (en) * 2001-09-28 2003-04-02 ABB Schweiz AG Turn-off high-power semiconductor device
JP2005116355A (ja) 2003-10-08 2005-04-28 Nec Microwave Inc マイクロ波管システム及びマイクロ波管
US8070329B1 (en) 2005-02-11 2011-12-06 Gentex Corporation Light emitting optical systems and assemblies and systems incorporating the same
DE102014005879B4 (de) * 2014-04-16 2021-12-16 Infineon Technologies Ag Vertikale Halbleitervorrichtung
US9455253B2 (en) * 2014-07-23 2016-09-27 Stmicroelectronics (Tours) Sas Bidirectional switch
CN107112318B (zh) * 2014-12-29 2019-06-18 三菱电机株式会社 功率模块
WO2022043033A2 (en) * 2020-08-31 2022-03-03 Hitachi Energy Switzerland Ag Electronic device, package and semiconductor chip therefore

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099201A (en) * 1977-04-11 1978-07-04 General Electric Company Semiconductor rectifier assembly having an insulating material therein that evolves gases when exposed to an arc
JPS5591151U (ko) * 1978-12-19 1980-06-24
JPS57100737A (en) * 1980-12-16 1982-06-23 Toshiba Corp Semiconductor device
JPS5871658A (ja) * 1981-10-23 1983-04-28 Toshiba Corp 圧接型半導体装置
JPS594033A (ja) * 1982-06-30 1984-01-10 Toshiba Corp 圧接型半導体装置
JPS5986260A (ja) * 1982-11-10 1984-05-18 Hitachi Ltd ゲ−トタ−ンオフサイリスタ
DE3308661A1 (de) * 1983-03-11 1984-09-20 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Halbleiterelement
JPS60154629A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 圧接型半導体装置
JPS60133648U (ja) * 1984-02-16 1985-09-06 株式会社　富士電機総合研究所 半導体装置
JPS6197933A (ja) * 1984-10-19 1986-05-16 Hitachi Ltd 全圧接型半導体装置
JPH065686B2 (ja) * 1985-09-04 1994-01-19 株式会社日立製作所 圧接型半導体装置
JPH081914B2 (ja) * 1987-03-31 1996-01-10 株式会社東芝 圧接型半導体装置

Also Published As

Publication number Publication date
JP2739970B2 (ja) 1998-04-15
EP0365007A2 (en) 1990-04-25
US4996586A (en) 1991-02-26
EP0365007A3 (en) 1991-01-23
KR930007517B1 (ko) 1993-08-12
JPH02110944A (ja) 1990-04-24

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Legal Events

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A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
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FPAY Annual fee payment

Payment date: 20060731

Year of fee payment: 14

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