KR890010999A - 화상표시면판 및 그 제조방법. - Google Patents

화상표시면판 및 그 제조방법. Download PDF

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KR890010999A
KR890010999A KR1019880016433A KR880016433A KR890010999A KR 890010999 A KR890010999 A KR 890010999A KR 1019880016433 A KR1019880016433 A KR 1019880016433A KR 880016433 A KR880016433 A KR 880016433A KR 890010999 A KR890010999 A KR 890010999A
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image display
film
sio
face plate
fine particles
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KR1019880016433A
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KR920002531B1 (ko
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히로미쯔 가와무라
다까오 가와부라
가쯔미 고바라
요시시게 엔도
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미따 가쯔시게
가부시기가이샤 히다찌세이사구쇼
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Priority claimed from JP31082387A external-priority patent/JP2559124B2/ja
Priority claimed from JP62310824A external-priority patent/JP2602514B2/ja
Priority claimed from JP63004715A external-priority patent/JP2749043B2/ja
Priority claimed from JP63035212A external-priority patent/JP2749049B2/ja
Application filed by 미따 가쯔시게, 가부시기가이샤 히다찌세이사구쇼 filed Critical 미따 가쯔시게
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    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
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Abstract

내용 없음

Description

화상표시면판 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명의 실시예의 부분단면 개략도.
제3(a) 및 3(b)도는 본 발명실시예의 개략적인 음극선관의 부분 단면도와, 음극선관의 하부전기전도성피막 및 반사방지피막을 도시한 확대단면도.
제6도는 본 발명의 다른 실시예의 개략도로 반사방지피막의 최외부표면부의 확대단면도.

Claims (32)

  1. 화상표시패널은 상기 패널의 전면에 투명·전기 전도성 성질의 SiO2피막(상기 피막은 전기전도성 금속산화물 및 흡수성 금속염에서 선택된 최소한 하나의 화합물의 미립자를 함유한다)을 포함하는 대전방지막을 지니는 것을 특징으로 하는 화상표시면판.
  2. 제1항에 있어서, 여기서 대전방지피막은 자체에 비반사기능을 지니는 것 또는 비반사피막으로 도포된 것을 특징으로 하는 화상표시면판.
  3. 제2항에 있어서, 여기서, 상기 대전방지피막에 도포된 상기 비반사피막은 직경 100~10,000Å의 SiO2미립자(상기 입자는 상기 패널의 표면에 고착되기 위해 상기 막으로 도포된 상태)를 함유하는 SiO2박막을 포함하는 것을 특징으로하는 화상표시면판.
  4. 제3항에 있어서, 여기서, 상기 대전방지피막의 2000Å이며 비반사피막내 함유된 SiO2미립자량은 0.01~1mg/㎠범위인 것을 특징으로하는 화상표시면판.
  5. 제4항에 있어서, 여기서 대전방지피막의 두께는 50~500Å이며, 상기 SiO2미립자량은 0.1~0.3mg/㎠범위인 것을 특징으로 하는 화상표시면판.
  6. 제1항에 있어서, 상기 최소한 하나의 화합물은 산화주석, 산화인듐, 산화안티모니, 주기율표의 Ⅱ, Ⅲ쪽 금속의 염화물, 질산염, 황산염 및 카르복시산염으로 이루어진 군에서 선택된 것을 특징으로 하는 화상표시면판.
  7. 제1항에 있어서, 여기서, 상기 SiO2막내 상기 최소한 하나의 화합물의 함량은 막 면적의 0.01~1.0mg/㎠범위인 것을 특징으로 하는 화상표시면판.
  8. 제1항에 있어서, 여기서, 대전방지피막은 상기 최소한 하나의 화합물외에 반사방지 기능을 지니고 직경 100~10,000Å의 SiO2미립자를 함유하는 SiO2박막으로서 형성되는 것을 특징으로 하는 화상표시면판.
  9. 제8항에 있어서, 여기서 상기 최소한 하나의 화합물은 주기율표의 Ⅱ, Ⅲ족의 금속염, 산화주석, 산화인듐, 산화안티모니로 이루어진 군에서 선택되는 것을 특징으로 하는 화상표시면판.
  10. 제8항에 있어서, 여기서, 상기 SiO2막은 SiO2미립자의 0.01~1.0mg/㎠와 상기 화합물의 0.1~1.0mg/㎠를 각각 함유하는 것을 특징으로 하는 화상표시면판.
  11. 제10항에 있어서, 여기서, 함유된 SiO2미립자의 양은 0.1~0.3mg/㎠이고 함유된 상기 최소한 하나의 미세입자의 양은 0.15~0.3mg/㎠인 것을 특징으로 하는 화상표시면판.
  12. 제2항에 있어서, 여기서, 상기 대전방지피막은 자체에 비반사기능을 지니고, 상기 대전방지피막은 표면에 미세 凸 凹를 지니며, SnO2, In2O3, Sb2O3에서 선택된 최소한 하나의 산화금속의 미세입자를 함유하는 것을 특징으로 하는 화상표시면판.
  13. 제1항에 있어서, 여기서, 상기 대전방지피막은 SnO2, In2O3, Sb2O3에서 선택된 최소한 하나의 전기전도성 산화금속의 미립자를 함유하며, 상기 SiO2피막은 알콕시실란[Si(OR1)4, R1은 알킬]의 알콜용액을 패널전면에 도포하고 결과의 피막을 200℃의 온도에서 가열처리하여 형성되는 것을 특징으로 하는 화상표시면판.
  14. 화상표시면판을 제조하는 방법은, 알콕시실란의 알콕용액내 최소한 하나의 전기전도성 금속산화물 및 흡수성 금속염의 미세입자의 서스펜션을 패널전면에 도포하고, 결과의 피막을 열처리하여, 전면에 투명전기 전도성 SiO2피막을 포함하는 대전방지막을 형성하는 단계를 포함하는 것을 특징으로 하는 화살표시면판 및 그 제조방법.
  15. 제14항에 있어서, 화상표시패널을 제조하는 방법은 대전방지막에 비반사막을 형성하는 단계를 포함하는 것을 특징으로 하는 화상표시면판 및 그 제조방법.
  16. 제15항에 있어서, 여기서, 비반사막의 형성은, 알콕시실란 Si(OR1)4(R1은 알킬)의 알콕용액에 직경 100~10,000Å의 SiO2미립자를 분산시키고, 패널에 형성된 투명기판인 대전방지막에 서스펜션을 도포하고, 결과의 피막을 가열하여 Si(OR1)4를 분해하여 SiO2미립자를 피복하고 고착하는 SiO2박막을 형성하는 단계를 포함하는 것을 특징으로 하는 화상표시면판 및 그 제조방법.
  17. 제16항에 있어서, 여기서, 흡수성금속연은, 주기율표의 Ⅱ, Ⅲ족 금속의 염화물, 질산염, 황산염, 카르복시산염이고 투명전도성 금속산화물은 주석, 인듐,안티모니의 금속산화물인 것을 특징으로 하는 화상표시면판 및 그 제조방법.
  18. 제14항에 있어서, 여기서, 상기 서스펜션은 알콕시실란의 알콜용액에 금속산화물 또는 금속염의 0.05~7중량%를 용해 또는 분산시켜 제조되는 것을 특징으로 하는 화상표시면판 및 그 제조방법.
  19. 제19항에 있어서, 여기서, 제1단계는 알콜용액에 금속염 및 금속산화물용 분산매체로서 케톤 또는 에틸 셀로솔브를 첨가하고 또한 Si(OR1)4의 가수분해를 용이하게 하는 물과 촉매로서 무기산을 첨가하여 제조된 서스펜션을 도포하는 단계를 포함하는 것을 특징으로 하는 화상표시면판.
  20. 제16항에 있어서, 여기서, 상기 서스펜션은 Si(OR1)4의 알콜용액에 SiO2미립자의 0.1~10중량%를 분산하여 제조되는 것을 특징으로 하는 화상표시면판 및 그 제조방법.
  21. 제16항 또는 제20항에 있어서, 여기서 Si(OR1)4의 R1은 에틸이며 알콜용액의 알콜성분은 에틸알콜인 것을 특징으로 하는 화상표시면판 및 그 제조방법.
  22. 제20항에 있어서, 여기서, 상기 서스펜션은 SiO2미립자용 분산매체로서 케톤 또는 에틸셀로솔브를 첨가하고, Si(OR1)4의 가수분해를 용이하게 하는 물 및 무기산을 첨가하여 제조되는 것을 특징으로 하는 화상 표시면판 및 그 제조방법.
  23. 제14항에 있어서, 여기서, 상기 서스펜션을 스핀코우팅, 담금코우팅, 분무코우팅 또는 이들 코우팅 방법의 조합으로 도포하고 피막표면을 50~200℃에서 열처리하는 것을 특징으로 하는 화상표시면판 및 그 제조방법.
  24. 제14항에 있어서, 여기서, 상기 대전방지피막은, 100~10,000Å직경의 SiO2미립를 Si(OR1)4(R1은 알킬)의 알콜용액에 분산하고, 또한 흡수성금속염 및 전기전도성 금속산화물에서 선택된 최소한 하나의 화합물의 입자를 분산하며, 결과의 서스펜션을 대전방지막에 도포하고, 결과의 피막을 가열하여 Si(OR1)4를 분해해서 SiO2박막을 형성하여 상기 패널표면에 SiO2미립자를 피복·고착시키는 것을 포함하는 단계로 형성되어 상기 대전방지막이 비반사기능를 지니는 것을 특징으로 하는 화상표시면판 및 그 제조방법.
  25. 제24항에 있어서, 여기서, 상기 최소한 하나의 화합물은 주기율표의 Ⅱ, Ⅲ족의 염화물, 질산염, 황산염, 카르복시산염과 주석·인듐·안티모니의 산화물로 구성된 군에서 선택되는 것을 특징으로 하는 화상 표시면판 및 그 제조방법.
  26. 제25항에 있어서, 여기서 Si(OR1)4의 알콜용액내에 상기 SiO2미립자는 0.1~10중량%로 함유되고 이 용액내에 상기 최소한 하나의 화합물은 0.05~7중량%인 것을 특징으로 하는 화상표시면판 및 그 제조방법.
  27. 제26항에 있어서, 여기서, 상기 SiO2미립자는 1~3중량%의 범위로, 상기 최소한 하나의 화합물은 1.0~2.0중량%로 함유되는 것을 특징으로 하는 화상표시면판 및 그 제조방법.
  28. 제24항에 있어서, 여기서, Si(OR1)4의 R1은 에틸이고 알콜용액의 알콜성분은 주로 에틸알콜로 구성되는 것을 특징으로 하는 화상표시면판 및 그 제조방법
  29. 제28항에 있어서, 여기서 상기 서스펜션은, 알콜용액에 SiO2미립자용 분산매체로서 케톤과 Si(OR1)4의 가수분해를 용이하게 하는 물 및 촉매로서 무기산을 첨가하여 제조되는 것을 특징으로 하는 화상표시면판 및 그 제조방법.
  30. 제24항에 있어서, 여기서 상기 서스펜션은 스핀코우팅, 담금코우팅, 분무코우팅 또는 이들 코우팅방법의 조합으로 도포되고 피막표면은 50~200℃에서 열처리되는 것을 특징으로 하는 화상표시면판 및 그 제조방법.
  31. 제15항에 있어서, 상기 대전방지막은, 최소한 하나의 SnO2, In2O3, Sb2O3를 함유하는 Si(OR1)4(R1은 알킬)의 알콜용액을 전면에 도포하고 피막을 예비소성하여 화상표시패널의 전면에 형성하고, 상기 비반사막은 Si(OR1)4의 알콜용액을 분무코우팅으로 도포하고 전체피막을 완전히 소성하여 최외부표면에 SiO2의 凸 凹막을 형성하여 예비소성된 피막상에 형성되는 것을 특징으로 하는 화상표시면판 및 그 제조방법.
  32. 제14항에 있어서, 여기서, 서스펜션은 알콕시실란 Si(OR1)4(R1은 알킬)의 알콜용액에 최소한 하나의 SnO2, In2O3, Sb2O3의 미립자의 분산이며 200℃의 온도에서 열처리를 실행하는 것을 특징으로 하는 화상표시면판 및 그 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880016433A 1987-12-10 1988-12-10 화상표시면판 및 그 제조방법 KR920002531B1 (ko)

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JP62-310824 1987-12-10
JP31082387A JP2559124B2 (ja) 1987-12-10 1987-12-10 画像表示画板及びその製造方法
JP62310824A JP2602514B2 (ja) 1987-12-10 1987-12-10 陰極線管及びその製造方法
JP62-310823 1987-12-10
JP63004715A JP2749043B2 (ja) 1988-01-14 1988-01-14 陰極線管の製造方法
JP63-4715 1988-01-14
JP63035212A JP2749049B2 (ja) 1988-02-19 1988-02-19 陰極線管の製造方法
JP63-35212 1988-02-19

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USRE37183E1 (en) 2001-05-22

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