KR840008533A - 반도체 재료의 제조방법 및 그것에 사용하는 장치 - Google Patents

반도체 재료의 제조방법 및 그것에 사용하는 장치 Download PDF

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Publication number
KR840008533A
KR840008533A KR1019840001721A KR840001721A KR840008533A KR 840008533 A KR840008533 A KR 840008533A KR 1019840001721 A KR1019840001721 A KR 1019840001721A KR 840001721 A KR840001721 A KR 840001721A KR 840008533 A KR840008533 A KR 840008533A
Authority
KR
South Korea
Prior art keywords
semiconductor material
single crystal
crystal ingot
bell jar
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1019840001721A
Other languages
English (en)
Korean (ko)
Inventor
히로후미(외3) 시미즈
Original Assignee
미쓰다 가쓰시게
가부시기기아샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰다 가쓰시게, 가부시기기아샤 히다찌 세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR840008533A publication Critical patent/KR840008533A/ko
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1019840001721A 1983-04-08 1984-04-02 반도체 재료의 제조방법 및 그것에 사용하는 장치 Abandoned KR840008533A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58060757A JPS59190300A (ja) 1983-04-08 1983-04-08 半導体製造方法および装置
JP60757 1990-03-12

Publications (1)

Publication Number Publication Date
KR840008533A true KR840008533A (ko) 1984-12-15

Family

ID=13151461

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840001721A Abandoned KR840008533A (ko) 1983-04-08 1984-04-02 반도체 재료의 제조방법 및 그것에 사용하는 장치

Country Status (6)

Country Link
JP (1) JPS59190300A (enExample)
KR (1) KR840008533A (enExample)
DE (1) DE3413082A1 (enExample)
FR (2) FR2543980A1 (enExample)
GB (1) GB2137524A (enExample)
IT (1) IT1175968B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61219795A (ja) * 1985-03-25 1986-09-30 Mitsubishi Metal Corp 析出核の形成速度が速いシリコン単結晶ウエハおよびその製造法
JPS61222999A (ja) * 1985-03-27 1986-10-03 Dowa Mining Co Ltd ３−ｖ族化合物半導体単結晶の電気的特性改良方法
JPH0787187B2 (ja) * 1987-08-13 1995-09-20 古河電気工業株式会社 ＧａＡｓ化合物半導体基板の製造方法
JPS6472997A (en) * 1987-09-14 1989-03-17 Nippon Mining Co Heat treatment of compound semiconductor single crystal
JPS6472999A (en) * 1987-09-14 1989-03-17 Nippon Mining Co Heat treatment of compound semiconductor single crystal
WO1989008158A1 (fr) * 1988-02-24 1989-09-08 Nippon Mining Co., Ltd. Monocristal de semi-conducteur composite, procede de production et dispositif a semi-conducteur fabrique en utilisant ledit monocristal
US5209811A (en) * 1988-03-25 1993-05-11 Shin-Etsu Handotai Company Limited Of Japan Method for heat-treating gallium arsenide monocrystals
US5228927A (en) * 1988-03-25 1993-07-20 Shin-Etsu Handotai Company Limited Method for heat-treating gallium arsenide monocrystals
JPH0653639B2 (ja) * 1988-10-31 1994-07-20 株式会社ジャパンエナジー 化合物半導体単結晶の製造方法
JPH02263792A (ja) * 1989-03-31 1990-10-26 Shin Etsu Handotai Co Ltd シリコンの熱処理方法
JPH0633236B2 (ja) * 1989-09-04 1994-05-02 新日本製鐵株式会社 シリコン単結晶の熱処理方法および装置ならびに製造装置
JPH04215439A (ja) * 1990-12-14 1992-08-06 Nikko Kyodo Co Ltd ＧａＡｓ単結晶基板の製造方法
CN101070621B (zh) 1997-04-09 2012-09-05 Memc电子材料有限公司 低缺陷密度、理想氧沉淀的硅
KR20010006202A (ko) 1997-04-09 2001-01-26 헨넬리 헬렌 에프 저결함밀도, 이상적 산소침전 실리콘
KR20010041957A (ko) 1998-06-26 2001-05-25 헨넬리 헬렌 에프 임의인 대 직경의 무결함 실리콘 결정의 성장 공정
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
JP3904832B2 (ja) 1998-10-14 2007-04-11 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 結晶成長導入欠陥を実質的に有さないエピタキシャルシリコンウエハ
WO2000022198A1 (en) 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6689209B2 (en) * 2000-11-03 2004-02-10 Memc Electronic Materials, Inc. Process for preparing low defect density silicon using high growth rates
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
EP2295619B1 (en) 2001-01-26 2014-04-23 MEMC Electronic Materials, Inc. Process for producing Low Defect Density Silicon Having a Vacancy-Dominated Core Substantially Free of Oxidation Induced Stacking Faults
JP4105688B2 (ja) * 2002-07-01 2008-06-25 株式会社大阪チタニウムテクノロジーズ シリコン単結晶材料とその製造方法
KR101385810B1 (ko) 2006-05-19 2014-04-16 엠이엠씨 일렉트로닉 머티리얼즈, 인크. Ｃｚ 성장 동안에 실리콘 단결정의 측면에 의해 유도되는 응집된 점 결함 및 산소 클러스터 형성을 제어하는 방법
CN101660209B (zh) * 2009-06-25 2012-05-30 南安市三晶阳光电力有限公司 一种减少多晶硅铸锭应力的方法和装置
CN102094248B (zh) * 2010-12-31 2012-07-11 东莞市中镓半导体科技有限公司 一种退火装置和方法
JP6287462B2 (ja) * 2014-03-27 2018-03-07 三菱マテリアル株式会社 プラズマ処理装置用電極板及びその製造方法
US11739437B2 (en) 2018-12-27 2023-08-29 Globalwafers Co., Ltd. Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1719021B1 (de) * 1963-07-13 1969-09-11 Siemens Ag Verfahren zum Verkleinern des Querschnittes eines lotrecht angeordneten Stabes aus Halbleitermaterial
CH458566A (de) * 1967-08-14 1968-06-30 Balzers Patent Beteilig Ag Verfahren und Vorrichtung zum Zonenschmelzen im Vakuum mit Elektronenstrahlbeschuss
GB1186127A (en) * 1968-01-05 1970-04-02 Dow Corning Method and Apparatus for Doping Semiconductors.
DE1769405B2 (de) * 1968-05-18 1972-08-03 Battelle-Entwicklungs-Gesellschaft mbH, 6000 Frankfurt Verfahren zur herstellung von einkristallen aus schmelzbaren stoffen
JPS5029405B1 (enExample) * 1971-02-06 1975-09-23
US3737282A (en) * 1971-10-01 1973-06-05 Ibm Method for reducing crystallographic defects in semiconductor structures
DE2436490C3 (de) * 1974-07-29 1978-12-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Phosphor-Dotierung von schwach n-leitenden Siliciumkör-
GB2080780B (en) * 1980-07-18 1983-06-29 Secr Defence Heat treatment of silicon slices
JPS5750427A (en) * 1980-09-12 1982-03-24 Ushio Inc Annealing device and annealing method
GB2116871B (en) * 1982-03-16 1985-11-13 Vnii Monokristallov Apparatus for growing single crystals from a melt using the czochralski method

Also Published As

Publication number Publication date
IT1175968B (it) 1987-08-12
DE3413082A1 (de) 1984-10-11
IT8420408A0 (it) 1984-04-05
GB2137524A (en) 1984-10-10
JPH0453840B2 (enExample) 1992-08-27
GB8404092D0 (en) 1984-03-21
FR2543980A1 (fr) 1984-10-12
FR2543981A1 (fr) 1984-10-12
JPS59190300A (ja) 1984-10-29

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19840402

PG1501 Laying open of application
PC1902 Submission of document of abandonment before decision of registration
SUBM Surrender of laid-open application requested