KR860008700A - 분자선 적층성장에 사용되는 복합 반도체기판의 별부식 처리방법과 그 처리장치 - Google Patents

분자선 적층성장에 사용되는 복합 반도체기판의 별부식 처리방법과 그 처리장치 Download PDF

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KR860008700A
KR860008700A KR1019860002503A KR860002503A KR860008700A KR 860008700 A KR860008700 A KR 860008700A KR 1019860002503 A KR1019860002503 A KR 1019860002503A KR 860002503 A KR860002503 A KR 860002503A KR 860008700 A KR860008700 A KR 860008700A
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composite semiconductor
semiconductor substrate
substrate
heating
molecular beam
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KR910009409B1 (ko
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준지 사이또오
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후지쓰 가부시끼가이샤
야마모도 다꾸마
후지쓰 가부시끼 가이샤
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract

내용 없음

Description

분자선 적층성장에 사용되는 복합 반도체기판의 열부식 처리방법과 그 처리장치
제1도는 GaAs 화합물로부터 As원소를 제거하는 것을 설명해주는 개략도.
제6도는 본 발명에 의한 장치의 한 예를 보여주는 도.
* 도면의 주요부분에 대한 부호의 설명 *
2 : 예비실 5 : 분자선원
6 : 성장실 10 : GaAs 기판

Claims (6)

  1. GaAs기판의 표무를 As분자선으로 조사하면서 Ga나 As가 모두 GaAs기판으로부터 제거될 수 있는 750℃의 온도 사상으로 GaAs 기판을 가열하는 단계, 및 하부의 GaAs의 일부를 제거함으로써 GaAs기판에 부착한 오염을 제거하는 공정으로 되어 있는 것을 특징으로 하는 분자선 적층성장(epitaxy)을 받는 GaAs 기판의 열부식 처리방법.
  2. 제1항에 있어서, 상기 As분자선이 As선 강도 1.5×10-5토트로 조사되는 것을 특징으로 하는 방법
  3. 제1항에 있어서, 상기 오염이 탄산가스, 수소화탄소등을 포함하는 것을 특징으로 하는 방법.
  4. 제1항에 있어서, GaAs 완충층이 상기 탄소 제거된 GaAs 기판상에 형성되는 것을 특징으로 하는 방법.
  5. 복합반도체를 As분자선으로 조사하면서 복합 반도체 기판표면으로부터 복합반도체의 모든 원소가 제거될 수 있는 온도이상의 온도까지 복합 반도체 기판을 가열하는 단계; 및 하부의 복합 반도체의 일부를 제거함으로써 복합반도체 기판에 부착해 있는 탄소를 제거하는 단계로 되어 있는 것을 특징으로 하는 분자선 적층성장에 사용되는 복합 반도체 기판의 열부식 처리방법.
  6. 복합 반도체 기판의 예비하기 위해 복합 반도체로부터 Ga나 As가 모두 제거될 수 있는 750℃의 온도 이상으로 복합 반도체 기판을지지 가열하기 위한 가열홀더가 설치되어 있고 상기 원소의 분자선으로 복합 반도체 기판을 조사하는 분자선원을 제공하는 예비실(프리챔버); 및 상기 예비실의 연속으로 반도체 결정층이 적층 성장적으로 성장하는 성장실로 되어 있는 것을 특징으로 하는 분자선 적층성장(epitaxy)에 사용되는 복합 반도체 기판의 열부식 처리 공정을 수행하는 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019860002503A 1985-04-02 1986-04-02 분자선 에피택시에 사용되는 화합물 반도체 기판의 열에칭처리방법과 그 처리방법 KR910009409B1 (ko)

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JP6846085 1985-04-02
JP60-068460 1985-04-02
JP68460 1985-04-02

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KR860008700A true KR860008700A (ko) 1986-11-17
KR910009409B1 KR910009409B1 (ko) 1991-11-15

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KR1019860002503A KR910009409B1 (ko) 1985-04-02 1986-04-02 분자선 에피택시에 사용되는 화합물 반도체 기판의 열에칭처리방법과 그 처리방법

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EP (1) EP0196897B1 (ko)
JP (1) JPS6230317A (ko)
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DE (1) DE3683521D1 (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3873593T2 (de) * 1987-04-21 1992-12-10 Seiko Instr Inc Apparatur zur herstellung von halbleiterkristallen.
JPH01223722A (ja) * 1988-03-02 1989-09-06 Fujitsu Ltd 結晶成長方法および結晶成長装置
EP0456485B1 (en) * 1990-05-09 1996-07-17 Sharp Kabushiki Kaisha Method for producing a semiconductor device
JP2706369B2 (ja) * 1990-11-26 1998-01-28 シャープ株式会社 化合物半導体の成長方法及び半導体レーザの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1528192A (en) * 1975-03-10 1978-10-11 Secr Defence Surface treatment of iii-v compound crystals
JPS5516451A (en) * 1978-07-24 1980-02-05 Hitachi Ltd Method of manufacturing semiconductor device
US4493142A (en) * 1982-05-07 1985-01-15 At&T Bell Laboratories III-V Based semiconductor devices and a process for fabrication
DE3381302D1 (de) * 1982-12-16 1990-04-12 Fujitsu Ltd Herstellung eines halbleiterbauelementes mittels molekularstrahlepitaxie.
JPS6129190A (ja) * 1984-07-19 1986-02-10 Rohm Co Ltd 半導体レ−ザの製造方法
JPS6142984A (ja) * 1984-08-06 1986-03-01 Rohm Co Ltd 半導体レ−ザの製造方法

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DE3683521D1 (de) 1992-03-05
EP0196897A1 (en) 1986-10-08
JPH053731B2 (ko) 1993-01-18
KR910009409B1 (ko) 1991-11-15
JPS6230317A (ja) 1987-02-09

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