KR890008930A - 기판 청정화 방법 및 기판 청정화 장치 - Google Patents

기판 청정화 방법 및 기판 청정화 장치 Download PDF

Info

Publication number
KR890008930A
KR890008930A KR1019880015262A KR880015262A KR890008930A KR 890008930 A KR890008930 A KR 890008930A KR 1019880015262 A KR1019880015262 A KR 1019880015262A KR 880015262 A KR880015262 A KR 880015262A KR 890008930 A KR890008930 A KR 890008930A
Authority
KR
South Korea
Prior art keywords
substrate
reactor
evacuating
ultraviolet
cleaning method
Prior art date
Application number
KR1019880015262A
Other languages
English (en)
Inventor
하사시 후꾸다
Original Assignee
고스기 노부미쓰
오끼덴끼고오교가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고스기 노부미쓰, 오끼덴끼고오교가부시끼가이샤 filed Critical 고스기 노부미쓰
Publication of KR890008930A publication Critical patent/KR890008930A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02301—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment in-situ cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/906—Cleaning of wafer as interim step

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

내용 없음

Description

기판 청정화 방법 및 기판 청정화 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 제1발명 및 제2발명의 설명에 제공되는 도면,
제2도는 제1발명 및 제2발명의 응용에의 설명에 제공되는 도면.

Claims (5)

  1. 기판을 설치한 기판 청정화 장치의 반응로안을 진공 배기하고나서 환원성 가스를 전기한 반응로안에 도입하는 공정과, 전기한 기판을 환원성 가스 분위기 중에서 가열함으로서 전기한 기판의 자연 산화막을 제거하는 공정과, 전기한 반응로안을 진공 배기하고 나서 반응성가스를 전기한 반응로안에 도입하는 공정과, 자외선에 이해 화학적으로 활성화한 전기한 반응성 가스에 의해서 전기한 기판을 애칭하여 전기한 기판의 불순물을 제거하는 공정을 포함하는 것을 특징으로 하는 기판 청정화 방법.
  2. 제1항에 있어서, 전기한 기판의 불순물의 제거를 전기한 기판을 가열해 가면서 행하는 것을 특징으로 하는 기판 청정화 방법.
  3. 제1 또는 2항에 있어서, 전기한 기판의 자연 산화막의 제거와, 전기한 기판의 불순물의 제거를 전기한 반응로안의 감압 상태에서 행하는 것을 특징으로 하는 기판 청정화 방법.
  4. 기판이 설치되는 반응로와, 그 반응로안을 진공 배기하기 위한 진공 배기 수단과, 적어도 기판의 자연 산화막을 제거하기위한 반응성 가스를, 전기한 반응로안에 공급하기위한 가스 공급부와, 전기한 반응로에 공급된 환원성 가스의 분위기중에서, 전기한 기판을 가열하기 위한 가열부와, 전기한 반응성 가스를 화학적으로 활성화 하기 위한 자외선 조사부를 구비하여 이루어진 것을 특징으로 하는 기판 청정화 장치.
  5. 제4항에 있어서, 전기한 가열부를 적외선 램프를 가지고 구성하고 및 전기한 자외선 자외선 조사부를 자외선 램프를 가지고 구성하고, 전기한 가열부 및 자외선 조사부를 반응로밖에 설치하여, 적외선 및 자외선을 반응로 밖에서 반응로 안으로 투과시키는 것을 특징을 하는 기판 청정화 장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880015262A 1987-11-19 1988-11-19 기판 청정화 방법 및 기판 청정화 장치 KR890008930A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP62-292927 1987-11-19
JP62292927A JPH01134932A (ja) 1987-11-19 1987-11-19 基板清浄化方法及び基板清浄化装置

Publications (1)

Publication Number Publication Date
KR890008930A true KR890008930A (ko) 1989-07-13

Family

ID=17788208

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880015262A KR890008930A (ko) 1987-11-19 1988-11-19 기판 청정화 방법 및 기판 청정화 장치

Country Status (4)

Country Link
US (1) US4871416A (ko)
EP (1) EP0316835A1 (ko)
JP (1) JPH01134932A (ko)
KR (1) KR890008930A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160075344A (ko) * 2014-12-19 2016-06-29 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5221423A (en) * 1986-05-20 1993-06-22 Fujitsu Limited Process for cleaning surface of semiconductor substrate
US5064681A (en) * 1986-08-21 1991-11-12 International Business Machines Corporation Selective deposition process for physical vapor deposition
US5225036A (en) * 1988-03-28 1993-07-06 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US5174881A (en) * 1988-05-12 1992-12-29 Mitsubishi Denki Kabushiki Kaisha Apparatus for forming a thin film on surface of semiconductor substrate
US5407867A (en) * 1988-05-12 1995-04-18 Mitsubishki Denki Kabushiki Kaisha Method of forming a thin film on surface of semiconductor substrate
US5015330A (en) * 1989-02-28 1991-05-14 Kabushiki Kaisha Toshiba Film forming method and film forming device
JPH02303131A (ja) * 1989-05-18 1990-12-17 Oki Electric Ind Co Ltd 絶縁膜形成方法
US5022961B1 (en) * 1989-07-26 1997-05-27 Dainippon Screen Mfg Method for removing a film on a silicon layer surface
US4989319A (en) * 1989-08-03 1991-02-05 Lockheed Missiles & Space Company, Inc. Method of fabricating a graded-groove heat pipe
JPH0757913B2 (ja) * 1989-10-27 1995-06-21 オリエンタルエンヂニアリング株式会社 脱脂洗浄方法および装置
JPH03160720A (ja) * 1989-11-20 1991-07-10 Oki Electric Ind Co Ltd 絶縁膜形成方法
US5198392A (en) * 1989-11-20 1993-03-30 Oki Electric Industry Co., Ltd. Method of forming a nitrided silicon dioxide (SiOx Ny) film
US5318662A (en) * 1989-12-20 1994-06-07 Texas Instruments Incorporated Copper etch process using halides
JPH03255628A (ja) * 1990-03-05 1991-11-14 Nippon Telegr & Teleph Corp <Ntt> 表面清浄化装置及び方法
DE4114741C2 (de) * 1990-07-04 1998-11-12 Mitsubishi Electric Corp Verfahren zur Bildung einer Leiterbahn auf einem Halbleitersubstrat
JPH0464234A (ja) * 1990-07-04 1992-02-28 Mitsubishi Electric Corp 配線パターンの形成方法
JPH07118522B2 (ja) * 1990-10-24 1995-12-18 インターナショナル・ビジネス・マシーンズ・コーポレイション 基板表面を酸化処理するための方法及び半導体の構造
US5188986A (en) * 1991-05-17 1993-02-23 United Microelectronics Corporation Hydrogen peroxide in basic solution to clean polycrystalline silicon after phosphorous diffusion
US5326406A (en) * 1991-07-31 1994-07-05 Kawasaki Steel Corporation Method of cleaning semiconductor substrate and apparatus for carrying out the same
US5240507A (en) * 1991-11-05 1993-08-31 Gray Donald J Cleaning method and system
US5228206A (en) * 1992-01-15 1993-07-20 Submicron Systems, Inc. Cluster tool dry cleaning system
US5352636A (en) * 1992-01-16 1994-10-04 Applied Materials, Inc. In situ method for cleaning silicon surface and forming layer thereon in same chamber
US5622595A (en) * 1992-06-16 1997-04-22 Applied Materials, Inc Reducing particulate contamination during semiconductor device processing
US5275687A (en) * 1992-11-20 1994-01-04 At&T Bell Laboratories Process for removing surface contaminants from III-V semiconductors
US5366559A (en) * 1993-05-27 1994-11-22 Research Triangle Institute Method for protecting a substrate surface from contamination using the photophoretic effect
JP3292545B2 (ja) * 1993-06-10 2002-06-17 株式会社東芝 半導体基板の熱処理方法
EP0710161A4 (en) * 1993-07-16 1997-04-16 Fusion Systems Corp POST-TREATMENT OF A COATED SUBSTRATE WITH AN EXCITED HALOGEN-GAS FOR THE REMOVAL OF RESIDUES
US5439553A (en) * 1994-03-30 1995-08-08 Penn State Research Foundation Controlled etching of oxides via gas phase reactions
JPH0864559A (ja) * 1994-06-14 1996-03-08 Fsi Internatl Inc 基板面から不要な物質を除去する方法
US6015503A (en) * 1994-06-14 2000-01-18 Fsi International, Inc. Method and apparatus for surface conditioning
US5534107A (en) * 1994-06-14 1996-07-09 Fsi International UV-enhanced dry stripping of silicon nitride films
US6124211A (en) * 1994-06-14 2000-09-26 Fsi International, Inc. Cleaning method
US5580421A (en) * 1994-06-14 1996-12-03 Fsi International Apparatus for surface conditioning
US5635102A (en) 1994-09-28 1997-06-03 Fsi International Highly selective silicon oxide etching method
JPH08167605A (ja) * 1994-12-15 1996-06-25 Mitsubishi Electric Corp シリコン窒化膜の製造方法
US5603848A (en) * 1995-01-03 1997-02-18 Texas Instruments Incorporated Method for etching through a substrate to an attached coating
US5814562A (en) * 1995-08-14 1998-09-29 Lucent Technologies Inc. Process for semiconductor device fabrication
US5753567A (en) * 1995-08-28 1998-05-19 Memc Electronic Materials, Inc. Cleaning of metallic contaminants from the surface of polycrystalline silicon with a halogen gas or plasma
US7025831B1 (en) 1995-12-21 2006-04-11 Fsi International, Inc. Apparatus for surface conditioning
US5782986A (en) * 1996-01-11 1998-07-21 Fsi International Process for metals removal using beta-diketone or beta-ketoimine ligand forming compounds
US6465043B1 (en) 1996-02-09 2002-10-15 Applied Materials, Inc. Method and apparatus for reducing particle contamination in a substrate processing chamber
US6121163A (en) * 1996-02-09 2000-09-19 Applied Materials, Inc. Method and apparatus for improving the film quality of plasma enhanced CVD films at the interface
US5902494A (en) * 1996-02-09 1999-05-11 Applied Materials, Inc. Method and apparatus for reducing particle generation by limiting DC bias spike
JP2907095B2 (ja) * 1996-02-28 1999-06-21 日本電気株式会社 半導体装置の製造方法
US5847390A (en) * 1996-04-09 1998-12-08 Texas Instruments Incorporated Reduced stress electrode for focal plane array of thermal imaging system and method
AT408287B (de) * 1996-10-01 2001-10-25 Sez Semiconduct Equip Zubehoer Verfahren und vorrichtung zum trocknen von scheibenförmigen substraten der halbleitertechnik
US6037273A (en) * 1997-07-11 2000-03-14 Applied Materials, Inc. Method and apparatus for insitu vapor generation
US5964230A (en) * 1997-10-06 1999-10-12 Air Products And Chemicals, Inc. Solvent purge mechanism
US6465374B1 (en) 1997-10-21 2002-10-15 Fsi International, Inc. Method of surface preparation
US6165273A (en) * 1997-10-21 2000-12-26 Fsi International Inc. Equipment for UV wafer heating and photochemistry
US6080987A (en) * 1997-10-28 2000-06-27 Raytheon Company Infrared-sensitive conductive-polymer coating
US6083557A (en) * 1997-10-28 2000-07-04 Raytheon Company System and method for making a conductive polymer coating
US6015759A (en) * 1997-12-08 2000-01-18 Quester Technology, Inc. Surface modification of semiconductors using electromagnetic radiation
US6098637A (en) * 1998-03-03 2000-08-08 Applied Materials, Inc. In situ cleaning of the surface inside a vacuum processing chamber
US6451714B2 (en) * 1998-08-26 2002-09-17 Micron Technology, Inc. System and method for selectively increasing surface temperature of an object
JP2000133736A (ja) * 1998-10-26 2000-05-12 Furukawa Electric Co Ltd:The 半導体レーザ素子の気密封止方法及び気密封止装置
US6099762A (en) 1998-12-21 2000-08-08 Lewis; Paul E. Method for improving lubricating surfaces on disks
DE19924058A1 (de) * 1999-05-26 2000-11-30 Bosch Gmbh Robert Verfahren und Vorrichtung zur Beseitigung von Kontaminationen durch Ozonbehandlung
US6348125B1 (en) * 2000-01-17 2002-02-19 Micron Technology, Inc. Removal of copper oxides from integrated interconnects
KR100560867B1 (ko) * 2000-05-02 2006-03-13 동경 엘렉트론 주식회사 산화방법 및 산화시스템
WO2001089843A1 (fr) * 2000-05-22 2001-11-29 Seiko Epson Corporation Element de tete et procede et dispositif de traitement du repoussement d'encre
KR101027485B1 (ko) 2001-02-12 2011-04-06 에이에스엠 아메리카, 인코포레이티드 반도체 박막 증착을 위한 개선된 공정
US7026219B2 (en) * 2001-02-12 2006-04-11 Asm America, Inc. Integration of high k gate dielectric
US6953047B2 (en) * 2002-01-14 2005-10-11 Air Products And Chemicals, Inc. Cabinet for chemical delivery with solvent purging
FR2836158B1 (fr) * 2002-02-19 2005-01-07 Usinor Procede de nettoyage par plasma de la surface d'un materiau enduit d'une substance organique, et installation de mise en oeuvre
US6966348B2 (en) * 2002-05-23 2005-11-22 Air Products And Chemicals, Inc. Purgeable container for low vapor pressure chemicals
US6648034B1 (en) 2002-05-23 2003-11-18 Air Products And Chemicals, Inc. Purgeable manifold for low vapor pressure chemicals containers
US7186630B2 (en) 2002-08-14 2007-03-06 Asm America, Inc. Deposition of amorphous silicon-containing films
US6869143B2 (en) 2003-04-01 2005-03-22 Bae Industries, Inc. Recliner clutch mechanism for vehicle seat
US7978964B2 (en) * 2006-04-27 2011-07-12 Applied Materials, Inc. Substrate processing chamber with dielectric barrier discharge lamp assembly
US7851365B1 (en) * 2006-04-27 2010-12-14 Arizona Board of Regents, a coporate body organized under Arizona Law, Acting on behalf of Arizona State Univesity Methods for preparing semiconductor substrates and interfacial oxides thereon
DE102007058503B4 (de) * 2007-12-05 2011-08-25 Siltronic AG, 81737 Verfahren zur nasschemischen Behandlung einer Halbleiterscheibe
DE102008041338A1 (de) 2008-08-19 2010-02-25 Evonik Röhm Gmbh Einfärbeprozess für Poly(meth)acrylate mit Flüssigfarben auf Wasserbasis und Flüssigfarben auf Wasserbasis
US8716132B2 (en) * 2009-02-13 2014-05-06 Tokyo Electron Limited Radiation-assisted selective deposition of metal-containing cap layers
US9018077B2 (en) 2009-04-30 2015-04-28 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Methods for wafer bonding, and for nucleating bonding nanophases
SI2591057T1 (sl) 2010-07-09 2019-09-30 Evonik Roehm Gmbh Vodni tekoči aditivi termostabilnih disperzij, ki vsebujejo barvilo za barvanje poli(met)akrilatov
US20130008602A1 (en) * 2011-07-07 2013-01-10 Lam Research Ag Apparatus for treating a wafer-shaped article
WO2013066977A1 (en) 2011-10-31 2013-05-10 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University Methods for wafer bonding and for nucleating bonding nanophases using wet and steam pressurization
US9418963B2 (en) 2012-09-25 2016-08-16 Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Methods for wafer bonding, and for nucleating bonding nanophases

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4149905A (en) * 1977-12-27 1979-04-17 Bell Telephone Laboratories, Incorporated Method of limiting stacking faults in oxidized silicon wafers
US4260649A (en) * 1979-05-07 1981-04-07 The Perkin-Elmer Corporation Laser induced dissociative chemical gas phase processing of workpieces
JPH0691014B2 (ja) * 1984-11-14 1994-11-14 株式会社日立製作所 半導体装置の製造装置
DE3516611A1 (de) * 1985-05-08 1986-11-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen eines halbleiterschaltkreises
EP0227839B1 (en) * 1985-07-02 1991-05-15 Semiconductor Energy Laboratory Co., Ltd. Method of forming a thin film
JPS62272541A (ja) * 1986-05-20 1987-11-26 Fujitsu Ltd 半導体基板の表面処理方法
US4731158A (en) * 1986-09-12 1988-03-15 International Business Machines Corporation High rate laser etching technique
US4718974A (en) * 1987-01-09 1988-01-12 Ultraphase Equipment, Inc. Photoresist stripping apparatus using microwave pumped ultraviolet lamp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160075344A (ko) * 2014-12-19 2016-06-29 도쿄엘렉트론가부시키가이샤 기판 처리 장치 및 기판 처리 방법

Also Published As

Publication number Publication date
US4871416A (en) 1989-10-03
JPH01134932A (ja) 1989-05-26
EP0316835A1 (en) 1989-05-24

Similar Documents

Publication Publication Date Title
KR890008930A (ko) 기판 청정화 방법 및 기판 청정화 장치
NO870182L (no) Fremgangsmaate og anordning for fjerning av vann fra etanol
CA2053760A1 (en) Contaminant control system for natural gas dehydration
KR960007449A (ko) 오존발생방법 및 장치와 그 사용방법
SE8900311L (sv) Anordning foer sorption av aktiv gas
JPS644022A (en) Device for removing organic matter
NO20001863D0 (no) Fremgangsmõte for gjenforgasning av gasshydrat og apparatur ved anvendelse av damp eller annen oppvarmet gass eller væske
EP0305946A3 (en) Method for removing organic and/or inorganic films by dry plasma ashing
KR850006229A (ko) 진공처리장치의 폐기가스 배기장치
EP2043138A3 (en) Method of processing an object having an oxide film on its surface and apparatus for performing said method
JPS5271386A (en) Method of removing membrane contaminants
ATE76775T1 (de) Vorrichtung zum trocknen von gas.
ES2063496T3 (es) Metodo y aparato para la purificacion de gases de desecho.
DE3060843D1 (en) Process for reducing the risks of inflammation and explosion as a result of the decomposition of ethylene under high pressure, and device for carrying out the process
ZA955750B (en) Process of and apparatus for providing at least a partial barrier to moisture vapour transfer through the surface of a material and/or removing moisture from a material
EP0770823A3 (de) Verfahren und Vorrichtung zur integrierten Entsorgung von Filterstäuben in thermischen Behandlungsanlagen
SE8207022L (sv) Sett och anordning for borttagning av koldioxid
ES2074869T3 (es) Procedimiento para el tratamiento de un fluido.
KR970006197A (ko) 정화처리용의 오존처리시설
JPS5631496A (en) Treatment of waste water
JPS5255255A (en) Process for removing harmful materials from a chemical industrial drai n water
DE3578378D1 (de) Entlueftungsbehaelter und einrichtung zu dessen verwendung.
SE8605082D0 (sv) Forfarande for impregnering
TW367433B (en) Control process and device for the operation of a surface treatment system
JPS63121A (ja) 蒸気乾燥洗浄装置

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application