IT8420408A0 - Procedimento per fabbricare materiali semiconduttori e relativa apparecchiatura. - Google Patents

Procedimento per fabbricare materiali semiconduttori e relativa apparecchiatura.

Info

Publication number
IT8420408A0
IT8420408A0 IT8420408A IT2040884A IT8420408A0 IT 8420408 A0 IT8420408 A0 IT 8420408A0 IT 8420408 A IT8420408 A IT 8420408A IT 2040884 A IT2040884 A IT 2040884A IT 8420408 A0 IT8420408 A0 IT 8420408A0
Authority
IT
Italy
Prior art keywords
procedure
semiconductor materials
manufacturing semiconductor
related equipment
equipment
Prior art date
Application number
IT8420408A
Other languages
English (en)
Other versions
IT1175968B (it
Inventor
Hirofumi Shimizu
Masato Fujita
Kazuya Suzuki
Fumiaki Hanagata
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8420408A0 publication Critical patent/IT8420408A0/it
Application granted granted Critical
Publication of IT1175968B publication Critical patent/IT1175968B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
IT20408/84A 1983-04-08 1984-04-05 Procedimento per fabbricare materiali semiconduttori e relativa apparecchiatura IT1175968B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58060757A JPS59190300A (ja) 1983-04-08 1983-04-08 半導体製造方法および装置

Publications (2)

Publication Number Publication Date
IT8420408A0 true IT8420408A0 (it) 1984-04-05
IT1175968B IT1175968B (it) 1987-08-12

Family

ID=13151461

Family Applications (1)

Application Number Title Priority Date Filing Date
IT20408/84A IT1175968B (it) 1983-04-08 1984-04-05 Procedimento per fabbricare materiali semiconduttori e relativa apparecchiatura

Country Status (6)

Country Link
JP (1) JPS59190300A (it)
KR (1) KR840008533A (it)
DE (1) DE3413082A1 (it)
FR (2) FR2543980A1 (it)
GB (1) GB2137524A (it)
IT (1) IT1175968B (it)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61219795A (ja) * 1985-03-25 1986-09-30 Mitsubishi Metal Corp 析出核の形成速度が速いシリコン単結晶ウエハおよびその製造法
JPS61222999A (ja) * 1985-03-27 1986-10-03 Dowa Mining Co Ltd ３−ｖ族化合物半導体単結晶の電気的特性改良方法
JPH0787187B2 (ja) * 1987-08-13 1995-09-20 古河電気工業株式会社 ＧａＡｓ化合物半導体基板の製造方法
JPS6472997A (en) * 1987-09-14 1989-03-17 Nippon Mining Co Heat treatment of compound semiconductor single crystal
JPS6472999A (en) * 1987-09-14 1989-03-17 Nippon Mining Co Heat treatment of compound semiconductor single crystal
WO1989008158A1 (en) * 1988-02-24 1989-09-08 Nippon Mining Co., Ltd. Single crystal of compound semiconductor, process for its production and semiconductor device manufactured by using same
US5228927A (en) * 1988-03-25 1993-07-20 Shin-Etsu Handotai Company Limited Method for heat-treating gallium arsenide monocrystals
US5209811A (en) * 1988-03-25 1993-05-11 Shin-Etsu Handotai Company Limited Of Japan Method for heat-treating gallium arsenide monocrystals
JPH0653639B2 (ja) * 1988-10-31 1994-07-20 株式会社ジャパンエナジー 化合物半導体単結晶の製造方法
JPH02263792A (ja) * 1989-03-31 1990-10-26 Shin Etsu Handotai Co Ltd シリコンの熱処理方法
JPH0633236B2 (ja) * 1989-09-04 1994-05-02 新日本製鐵株式会社 シリコン単結晶の熱処理方法および装置ならびに製造装置
JPH04215439A (ja) * 1990-12-14 1992-08-06 Nikko Kyodo Co Ltd ＧａＡｓ単結晶基板の製造方法
SG105510A1 (en) 1997-04-09 2004-08-27 Memc Electronic Materials Low defect density silicon
EP1146150B1 (en) 1997-04-09 2010-06-09 MEMC Electronic Materials, Inc. Low defect density, ideal oxygen precipitating silicon
EP1090166B1 (en) 1998-06-26 2002-03-27 MEMC Electronic Materials, Inc. Process for growth of defect free silicon crystals of arbitrarily large diameters
WO2000022197A1 (en) 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Epitaxial silicon wafers substantially free of grown-in defects
WO2000022198A1 (en) 1998-10-14 2000-04-20 Memc Electronic Materials, Inc. Thermally annealed, low defect density single crystal silicon
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6689209B2 (en) * 2000-11-03 2004-02-10 Memc Electronic Materials, Inc. Process for preparing low defect density silicon using high growth rates
KR100854186B1 (ko) 2001-01-26 2008-08-26 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 산화 유도된 적층 결함을 실질적으로 포함하지 않는베이컨시 지배 코어를 갖는 낮은 결함 밀도의 실리콘
AU2002311325A1 (en) * 2002-07-01 2004-01-19 Sumitomo Titanium Corporation Silicon single crystal material and its production method
KR101385810B1 (ko) 2006-05-19 2014-04-16 엠이엠씨 일렉트로닉 머티리얼즈, 인크. Ｃｚ 성장 동안에 실리콘 단결정의 측면에 의해 유도되는 응집된 점 결함 및 산소 클러스터 형성을 제어하는 방법
CN101660209B (zh) * 2009-06-25 2012-05-30 南安市三晶阳光电力有限公司 一种减少多晶硅铸锭应力的方法和装置
CN102094248B (zh) * 2010-12-31 2012-07-11 东莞市中镓半导体科技有限公司 一种退火装置和方法
JP6287462B2 (ja) * 2014-03-27 2018-03-07 三菱マテリアル株式会社 プラズマ処理装置用電極板及びその製造方法
US11739437B2 (en) 2018-12-27 2023-08-29 Globalwafers Co., Ltd. Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growth

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1719021B1 (de) * 1963-07-13 1969-09-11 Siemens Ag Verfahren zum Verkleinern des Querschnittes eines lotrecht angeordneten Stabes aus Halbleitermaterial
CH458566A (de) * 1967-08-14 1968-06-30 Balzers Patent Beteilig Ag Verfahren und Vorrichtung zum Zonenschmelzen im Vakuum mit Elektronenstrahlbeschuss
GB1186127A (en) * 1968-01-05 1970-04-02 Dow Corning Method and Apparatus for Doping Semiconductors.
DE1769405B2 (de) * 1968-05-18 1972-08-03 Battelle-Entwicklungs-Gesellschaft mbH, 6000 Frankfurt Verfahren zur herstellung von einkristallen aus schmelzbaren stoffen
JPS5029405B1 (it) * 1971-02-06 1975-09-23
US3737282A (en) * 1971-10-01 1973-06-05 Ibm Method for reducing crystallographic defects in semiconductor structures
DE2436490C3 (de) * 1974-07-29 1978-12-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zur Phosphor-Dotierung von schwach n-leitenden Siliciumkör-
GB2080780B (en) * 1980-07-18 1983-06-29 Secr Defence Heat treatment of silicon slices
JPS5750427A (en) * 1980-09-12 1982-03-24 Ushio Inc Annealing device and annealing method
GB2116871B (en) * 1982-03-16 1985-11-13 Vnii Monokristallov Apparatus for growing single crystals from a melt using the czochralski method

Also Published As

Publication number Publication date
FR2543981A1 (fr) 1984-10-12
KR840008533A (ko) 1984-12-15
GB2137524A (en) 1984-10-10
JPH0453840B2 (it) 1992-08-27
JPS59190300A (ja) 1984-10-29
DE3413082A1 (de) 1984-10-11
FR2543980A1 (fr) 1984-10-12
IT1175968B (it) 1987-08-12
GB8404092D0 (en) 1984-03-21

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TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19940426