IT8248113A0 - Apparecchio e procedimento per laproduzione di materiali semiconduttori iperpuri - Google Patents
Apparecchio e procedimento per laproduzione di materiali semiconduttori iperpuriInfo
- Publication number
- IT8248113A0 IT8248113A0 IT8248113A IT4811382A IT8248113A0 IT 8248113 A0 IT8248113 A0 IT 8248113A0 IT 8248113 A IT8248113 A IT 8248113A IT 4811382 A IT4811382 A IT 4811382A IT 8248113 A0 IT8248113 A0 IT 8248113A0
- Authority
- IT
- Italy
- Prior art keywords
- procedure
- production
- semiconductor materials
- hyperpure
- hyperpure semiconductor
- Prior art date
Links
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT48113/82A IT1147832B (it) | 1982-03-29 | 1982-03-29 | Apparecchio e procedimento per la produzione di materiali semiconduttori iperpuri |
EP83102810A EP0090321A3 (de) | 1982-03-29 | 1983-03-22 | Reaktor und Verfahren zur Herstellung von Halbleitersilicium |
JP58050573A JPS58176924A (ja) | 1982-03-29 | 1983-03-28 | 純粋な半導体材料の製法及びその装置 |
DK141183A DK155955C (da) | 1982-03-29 | 1983-03-28 | Fremgangsmaade og apparat til aflejring af halvledermateriale af hoej renhed |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT48113/82A IT1147832B (it) | 1982-03-29 | 1982-03-29 | Apparecchio e procedimento per la produzione di materiali semiconduttori iperpuri |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8248113A0 true IT8248113A0 (it) | 1982-03-29 |
IT1147832B IT1147832B (it) | 1986-11-26 |
Family
ID=11264599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT48113/82A IT1147832B (it) | 1982-03-29 | 1982-03-29 | Apparecchio e procedimento per la produzione di materiali semiconduttori iperpuri |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0090321A3 (it) |
JP (1) | JPS58176924A (it) |
DK (1) | DK155955C (it) |
IT (1) | IT1147832B (it) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6169962A (ja) * | 1984-09-13 | 1986-04-10 | Agency Of Ind Science & Technol | 霧化薄膜作製装置 |
DE69126724T2 (de) * | 1990-03-19 | 1998-01-15 | Toshiba Kawasaki Kk | Vorrichtung zur Dampfphasenabscheidung |
JPH04175294A (ja) * | 1990-11-09 | 1992-06-23 | Fujitsu Ltd | 気相成長装置 |
WO2005123583A1 (ja) | 2004-06-22 | 2005-12-29 | Shin-Etsu Film Co., Ltd. | 多結晶シリコンの製造方法およびその製造方法によって製造される太陽電池用多結晶シリコン |
JP5308288B2 (ja) * | 2009-09-14 | 2013-10-09 | 信越化学工業株式会社 | 多結晶シリコン製造用反応炉、多結晶シリコン製造システム、および多結晶シリコンの製造方法 |
CN103098173A (zh) | 2010-07-19 | 2013-05-08 | 瑞科硅公司 | 多晶硅生产 |
DE102015200070A1 (de) | 2015-01-07 | 2016-07-07 | Wacker Chemie Ag | Reaktor zur Abscheidung von polykristallinem Silicium |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1341482A (fr) * | 1960-02-23 | 1963-11-02 | Siemens Ag | Procédé de fabrication d'un matériau semi-conducteur de grande pureté, en particulier de silicium |
US3717439A (en) * | 1970-11-18 | 1973-02-20 | Tokyo Shibaura Electric Co | Vapour phase reaction apparatus |
US4173944A (en) * | 1977-05-20 | 1979-11-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Silverplated vapor deposition chamber |
DE2912661C2 (de) * | 1979-03-30 | 1982-06-24 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens |
DD156273A1 (de) * | 1981-02-11 | 1982-08-11 | Hans Kraemer | Verfahren zur herstellung von polykristallinem silizium |
-
1982
- 1982-03-29 IT IT48113/82A patent/IT1147832B/it active
-
1983
- 1983-03-22 EP EP83102810A patent/EP0090321A3/de not_active Ceased
- 1983-03-28 JP JP58050573A patent/JPS58176924A/ja active Pending
- 1983-03-28 DK DK141183A patent/DK155955C/da not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DK141183A (da) | 1983-09-30 |
DK155955C (da) | 1989-10-23 |
IT1147832B (it) | 1986-11-26 |
EP0090321A2 (de) | 1983-10-05 |
DK141183D0 (da) | 1983-03-28 |
DK155955B (da) | 1989-06-05 |
EP0090321A3 (de) | 1986-05-14 |
JPS58176924A (ja) | 1983-10-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970329 |