DK155955C - Fremgangsmaade og apparat til aflejring af halvledermateriale af hoej renhed - Google Patents
Fremgangsmaade og apparat til aflejring af halvledermateriale af hoej renhedInfo
- Publication number
- DK155955C DK155955C DK141183A DK141183A DK155955C DK 155955 C DK155955 C DK 155955C DK 141183 A DK141183 A DK 141183A DK 141183 A DK141183 A DK 141183A DK 155955 C DK155955 C DK 155955C
- Authority
- DK
- Denmark
- Prior art keywords
- disposal
- semiconductor material
- high purity
- purity semiconductor
- semiconductor
- Prior art date
Links
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT48113/82A IT1147832B (it) | 1982-03-29 | 1982-03-29 | Apparecchio e procedimento per la produzione di materiali semiconduttori iperpuri |
IT4811382 | 1982-03-29 |
Publications (4)
Publication Number | Publication Date |
---|---|
DK141183D0 DK141183D0 (da) | 1983-03-28 |
DK141183A DK141183A (da) | 1983-09-30 |
DK155955B DK155955B (da) | 1989-06-05 |
DK155955C true DK155955C (da) | 1989-10-23 |
Family
ID=11264599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK141183A DK155955C (da) | 1982-03-29 | 1983-03-28 | Fremgangsmaade og apparat til aflejring af halvledermateriale af hoej renhed |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP0090321A3 (da) |
JP (1) | JPS58176924A (da) |
DK (1) | DK155955C (da) |
IT (1) | IT1147832B (da) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6169962A (ja) * | 1984-09-13 | 1986-04-10 | Agency Of Ind Science & Technol | 霧化薄膜作製装置 |
DE69126724T2 (de) * | 1990-03-19 | 1998-01-15 | Toshiba Kawasaki Kk | Vorrichtung zur Dampfphasenabscheidung |
JPH04175294A (ja) * | 1990-11-09 | 1992-06-23 | Fujitsu Ltd | 気相成長装置 |
WO2005123583A1 (ja) * | 2004-06-22 | 2005-12-29 | Shin-Etsu Film Co., Ltd. | 多結晶シリコンの製造方法およびその製造方法によって製造される太陽電池用多結晶シリコン |
JP5308288B2 (ja) * | 2009-09-14 | 2013-10-09 | 信越化学工業株式会社 | 多結晶シリコン製造用反応炉、多結晶シリコン製造システム、および多結晶シリコンの製造方法 |
WO2012012457A2 (en) | 2010-07-19 | 2012-01-26 | Rec Silicon Inc | Polycrystalline silicon production |
DE102015200070A1 (de) | 2015-01-07 | 2016-07-07 | Wacker Chemie Ag | Reaktor zur Abscheidung von polykristallinem Silicium |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1341482A (fr) * | 1960-02-23 | 1963-11-02 | Siemens Ag | Procédé de fabrication d'un matériau semi-conducteur de grande pureté, en particulier de silicium |
US3717439A (en) * | 1970-11-18 | 1973-02-20 | Tokyo Shibaura Electric Co | Vapour phase reaction apparatus |
US4173944A (en) * | 1977-05-20 | 1979-11-13 | Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh | Silverplated vapor deposition chamber |
DE2912661C2 (de) * | 1979-03-30 | 1982-06-24 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren zur Abscheidung von reinem Halbleitermaterial und Düse zur Durchführung des Verfahrens |
DD156273A1 (de) * | 1981-02-11 | 1982-08-11 | Hans Kraemer | Verfahren zur herstellung von polykristallinem silizium |
-
1982
- 1982-03-29 IT IT48113/82A patent/IT1147832B/it active
-
1983
- 1983-03-22 EP EP83102810A patent/EP0090321A3/de not_active Ceased
- 1983-03-28 JP JP58050573A patent/JPS58176924A/ja active Pending
- 1983-03-28 DK DK141183A patent/DK155955C/da not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
IT8248113A0 (it) | 1982-03-29 |
IT1147832B (it) | 1986-11-26 |
EP0090321A3 (de) | 1986-05-14 |
JPS58176924A (ja) | 1983-10-17 |
DK141183A (da) | 1983-09-30 |
DK141183D0 (da) | 1983-03-28 |
DK155955B (da) | 1989-06-05 |
EP0090321A2 (de) | 1983-10-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PBP | Patent lapsed | ||
PBP | Patent lapsed |