DK155955C - METHOD AND APPARATUS FOR DISPOSAL OF HIGH PURITY Semiconductor Material - Google Patents

METHOD AND APPARATUS FOR DISPOSAL OF HIGH PURITY Semiconductor Material

Info

Publication number
DK155955C
DK155955C DK141183A DK141183A DK155955C DK 155955 C DK155955 C DK 155955C DK 141183 A DK141183 A DK 141183A DK 141183 A DK141183 A DK 141183A DK 155955 C DK155955 C DK 155955C
Authority
DK
Denmark
Prior art keywords
disposal
semiconductor material
high purity
purity semiconductor
semiconductor
Prior art date
Application number
DK141183A
Other languages
Danish (da)
Other versions
DK155955B (en
DK141183D0 (en
DK141183A (en
Inventor
Pietro Scandola
Romano Amaduzzi
Luigi Curatolo
Original Assignee
Dynamit Nobel Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=11264599&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DK155955(C) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Dynamit Nobel Ag filed Critical Dynamit Nobel Ag
Publication of DK141183D0 publication Critical patent/DK141183D0/en
Publication of DK141183A publication Critical patent/DK141183A/en
Publication of DK155955B publication Critical patent/DK155955B/en
Application granted granted Critical
Publication of DK155955C publication Critical patent/DK155955C/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
DK141183A 1982-03-29 1983-03-28 METHOD AND APPARATUS FOR DISPOSAL OF HIGH PURITY Semiconductor Material DK155955C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IT48113/82A IT1147832B (en) 1982-03-29 1982-03-29 APPARATUS AND PROCEDURE FOR THE PRODUCTION OF HYPERPURE SEMICONDUCTIVE MATERIALS
IT4811382 1982-03-29

Publications (4)

Publication Number Publication Date
DK141183D0 DK141183D0 (en) 1983-03-28
DK141183A DK141183A (en) 1983-09-30
DK155955B DK155955B (en) 1989-06-05
DK155955C true DK155955C (en) 1989-10-23

Family

ID=11264599

Family Applications (1)

Application Number Title Priority Date Filing Date
DK141183A DK155955C (en) 1982-03-29 1983-03-28 METHOD AND APPARATUS FOR DISPOSAL OF HIGH PURITY Semiconductor Material

Country Status (4)

Country Link
EP (1) EP0090321A3 (en)
JP (1) JPS58176924A (en)
DK (1) DK155955C (en)
IT (1) IT1147832B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6169962A (en) * 1984-09-13 1986-04-10 Agency Of Ind Science & Technol Device for forming fogged thin film
DE69126724T2 (en) * 1990-03-19 1998-01-15 Toshiba Kawasaki Kk Device for vapor phase separation
JPH04175294A (en) * 1990-11-09 1992-06-23 Fujitsu Ltd Vapor growth equipment
EP1772429A4 (en) * 2004-06-22 2010-01-06 Shin Etsu Film Co Ltd Method for producing polycrystalline silicon and polycrystalline silicon for solar cell produced by the method
JP5308288B2 (en) * 2009-09-14 2013-10-09 信越化学工業株式会社 Reactor for producing polycrystalline silicon, polycrystalline silicon production system, and method for producing polycrystalline silicon
US20130115374A1 (en) 2010-07-19 2013-05-09 Krishnakumar M. Jayakar Polycrystalline silicon production
DE102015200070A1 (en) 2015-01-07 2016-07-07 Wacker Chemie Ag Reactor for the deposition of polycrystalline silicon

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1341482A (en) * 1960-02-23 1963-11-02 Siemens Ag Process for manufacturing a high purity semiconductor material, in particular silicon
US3717439A (en) * 1970-11-18 1973-02-20 Tokyo Shibaura Electric Co Vapour phase reaction apparatus
US4173944A (en) * 1977-05-20 1979-11-13 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Silverplated vapor deposition chamber
DE2912661C2 (en) * 1979-03-30 1982-06-24 Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen Process for the deposition of pure semiconductor material and nozzle for carrying out the process
DD156273A1 (en) * 1981-02-11 1982-08-11 Hans Kraemer PROCESS FOR PREPARING POLYCRYSTALLINE SILICON

Also Published As

Publication number Publication date
EP0090321A3 (en) 1986-05-14
IT1147832B (en) 1986-11-26
DK155955B (en) 1989-06-05
DK141183D0 (en) 1983-03-28
DK141183A (en) 1983-09-30
JPS58176924A (en) 1983-10-17
IT8248113A0 (en) 1982-03-29
EP0090321A2 (en) 1983-10-05

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