IT1173138B - Procedimento per la produzione di un dispositivo a semiconduttori - Google Patents

Procedimento per la produzione di un dispositivo a semiconduttori

Info

Publication number
IT1173138B
IT1173138B IT19317/84A IT1931784A IT1173138B IT 1173138 B IT1173138 B IT 1173138B IT 19317/84 A IT19317/84 A IT 19317/84A IT 1931784 A IT1931784 A IT 1931784A IT 1173138 B IT1173138 B IT 1173138B
Authority
IT
Italy
Prior art keywords
procedure
production
semiconductor device
semiconductor
Prior art date
Application number
IT19317/84A
Other languages
English (en)
Other versions
IT8419317A0 (it
Inventor
Shimizu Isao
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of IT8419317A0 publication Critical patent/IT8419317A0/it
Application granted granted Critical
Publication of IT1173138B publication Critical patent/IT1173138B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)
IT19317/84A 1983-01-26 1984-01-25 Procedimento per la produzione di un dispositivo a semiconduttori IT1173138B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58009800A JPS59136977A (ja) 1983-01-26 1983-01-26 圧力感知半導体装置とその製造法

Publications (2)

Publication Number Publication Date
IT8419317A0 IT8419317A0 (it) 1984-01-25
IT1173138B true IT1173138B (it) 1987-06-18

Family

ID=11730266

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19317/84A IT1173138B (it) 1983-01-26 1984-01-25 Procedimento per la produzione di un dispositivo a semiconduttori

Country Status (9)

Country Link
US (1) US4588472A (it)
JP (1) JPS59136977A (it)
KR (1) KR840007485A (it)
DE (1) DE3402629A1 (it)
FR (1) FR2539914B1 (it)
GB (1) GB2136204B (it)
HK (1) HK4589A (it)
IT (1) IT1173138B (it)
SG (1) SG77888G (it)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8426915D0 (en) * 1984-10-24 1984-11-28 Marconi Instruments Ltd Fabricating devices on semiconductor substrates
US4665610A (en) * 1985-04-22 1987-05-19 Stanford University Method of making a semiconductor transducer having multiple level diaphragm structure
JPH0750789B2 (ja) * 1986-07-18 1995-05-31 日産自動車株式会社 半導体圧力変換装置の製造方法
CA1314410C (en) * 1986-12-08 1993-03-16 Masanori Nishiguchi Wiring structure of semiconductor pressure sensor
US4897360A (en) * 1987-12-09 1990-01-30 Wisconsin Alumni Research Foundation Polysilicon thin film process
US4885621A (en) * 1988-05-02 1989-12-05 Delco Electronics Corporation Monolithic pressure sensitive integrated circuit
US4977101A (en) * 1988-05-02 1990-12-11 Delco Electronics Corporation Monolithic pressure sensitive integrated circuit
US5110373A (en) * 1988-09-13 1992-05-05 Nanostructures, Inc. Silicon membrane with controlled stress
US5066533A (en) * 1989-07-11 1991-11-19 The Perkin-Elmer Corporation Boron nitride membrane in wafer structure and process of forming the same
EP0416284B1 (de) * 1989-09-07 1995-03-15 Siemens Aktiengesellschaft Optokoppler
DE4003472C2 (de) * 1989-09-22 1999-08-12 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Siliziumplatten
US4978421A (en) * 1989-11-13 1990-12-18 International Business Machines Corporation Monolithic silicon membrane device fabrication process
US5107309A (en) * 1989-12-18 1992-04-21 Honeywell Inc. Double diffused leadout for a semiconductor device
US5289721A (en) * 1990-09-10 1994-03-01 Nippondenso Co., Ltd. Semiconductor pressure sensor
US5225377A (en) * 1991-05-03 1993-07-06 Honeywell Inc. Method for micromachining semiconductor material
US6140143A (en) * 1992-02-10 2000-10-31 Lucas Novasensor Inc. Method of producing a buried boss diaphragm structure in silicon
US5387316A (en) * 1992-12-09 1995-02-07 Motorola, Inc. Wafer etch protection method
DE4309207C2 (de) * 1993-03-22 1996-07-11 Texas Instruments Deutschland Halbleitervorrichtung mit einem piezoresistiven Drucksensor
US5543335A (en) * 1993-05-05 1996-08-06 Ixys Corporation Advanced power device process for low drop
DE4423596A1 (de) * 1994-07-06 1996-01-11 Bosch Gmbh Robert Piezoresistiver Widerstand
DE19932541B4 (de) * 1999-07-13 2011-07-28 Robert Bosch GmbH, 70469 Verfahren zur Herstellung einer Membran
DE10047500B4 (de) * 2000-09-26 2009-11-26 Robert Bosch Gmbh Mikromechanische Membran und Verfahren zu ihrer Herstellung
US6959608B2 (en) * 2002-05-23 2005-11-01 The Board Of Trustees Of The Leland Stanford Junior University Ultra-miniature pressure sensors and probes
US20060276008A1 (en) * 2005-06-02 2006-12-07 Vesa-Pekka Lempinen Thinning
JP5281658B2 (ja) * 2009-01-06 2013-09-04 アルプス電気株式会社 ピエゾ抵抗型圧力センサ

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1211499A (en) * 1969-03-07 1970-11-04 Standard Telephones Cables Ltd A method of manufacturing semiconductor devices
GB1278210A (en) * 1970-03-14 1972-06-21 Ferranti Ltd Improvements relating to semiconductir strain transducers
US3738880A (en) * 1971-06-23 1973-06-12 Rca Corp Method of making a semiconductor device
US3893228A (en) * 1972-10-02 1975-07-08 Motorola Inc Silicon pressure sensor
DE2644638A1 (de) * 1975-10-06 1977-04-07 Honeywell Inc Verfahren zur herstellung eines halbleiter-druckfuehlers sowie nach diesem verfahren hergestellter druckfuehler
JPS52128066A (en) * 1976-04-20 1977-10-27 Matsushita Electronics Corp Manufacture of semiconductor device
GB1584915A (en) * 1978-05-09 1981-02-18 Standard Telephones Cables Ltd Silicon devices
GB1588669A (en) * 1978-05-30 1981-04-29 Standard Telephones Cables Ltd Silicon transducer
DE2841312C2 (de) * 1978-09-22 1985-06-05 Robert Bosch Gmbh, 7000 Stuttgart Monolithischer Halbleiter-Drucksensor und Verfahren zu dessen Herstellung
US4351706A (en) * 1980-03-27 1982-09-28 International Business Machines Corporation Electrochemically eroding semiconductor device
GB2121646B (en) * 1982-05-13 1985-08-07 Itt Ind Ltd Transducer
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法

Also Published As

Publication number Publication date
DE3402629A1 (de) 1984-07-26
FR2539914A1 (fr) 1984-07-27
GB8401123D0 (en) 1984-02-22
GB2136204A (en) 1984-09-12
US4588472A (en) 1986-05-13
FR2539914B1 (fr) 1986-08-29
JPS59136977A (ja) 1984-08-06
SG77888G (en) 1989-03-23
GB2136204B (en) 1987-07-08
IT8419317A0 (it) 1984-01-25
HK4589A (en) 1989-01-27
KR840007485A (ko) 1984-12-07

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19940121