KR840007485A - 압력 감지(壓力感知)반도체 장치와 그 제조방법 - Google Patents

압력 감지(壓力感知)반도체 장치와 그 제조방법 Download PDF

Info

Publication number
KR840007485A
KR840007485A KR1019840000265A KR840000265A KR840007485A KR 840007485 A KR840007485 A KR 840007485A KR 1019840000265 A KR1019840000265 A KR 1019840000265A KR 840000265 A KR840000265 A KR 840000265A KR 840007485 A KR840007485 A KR 840007485A
Authority
KR
South Korea
Prior art keywords
semiconductor
manufacturing
main surface
high concentration
substrate
Prior art date
Application number
KR1019840000265A
Other languages
English (en)
Inventor
이사오 시미즈
Original Assignee
미쓰다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰다 가쓰시게, 가부시기 가이샤 히다찌 세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR840007485A publication Critical patent/KR840007485A/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/924—To facilitate selective etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

내용 없음.

Description

압력 감지(壓力感知)반도체 장치와 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도, 제3도 내지 제10도는 본 발명을 적용한 압력 센서(sensor)의 제조 공정을 도시한 공정 단면도.
제2도는 상기 압력 센서의 제조 공정을 도시한 사시도.

Claims (7)

  1. 반도체 기체의 1주면에 1부에 고농도 불순물층을 형성 한후, 이 고농도 불순물 층이 형성되지 않은 기판 부분에 대해, 선택적인 엣칭을 행하는 것에 의해, 반도체 기판의 1부에 두께가 틀리는 부분을 형성하는 것을 특징으로 하는 반도체 장치의 제조법.
  2. 상기 반도체 결정 기판으로, 그 주면이(100)면 또는 그 근방에 있는 실리콘 결정 기판을 사용하는 특허 청구의 범위 제1항 기재의 반도체 장치의 제조법.
  3. 특허청구 범위 제2항에 있어서, 엣칭은 알카리 엣치액을 사용한 이방성 엣칭으로 된다.
  4. 특허 청구 범위 제1항에 있어서, 상기 불순물층의 불순물 농도는, 1010atoms/㎤ 이상이다.
  5. 상기 반도체 기판의 두께가 틀린 부분의 표면에 압력 감지를 위한 확산 저항을 형성하는 특허 청구의 범위 제1항 기재의 반도체 장치의 제조법.
  6. 다음과 같은 공정으로 되는 반도체 압력 센서의 제조법. 서로 대향하고 있는 제1, 제2 주면을 가진 반도체 결정 기판을 구비하는 공정. 적어도 제1 주면의 부분에 마스크를 사용하고, 마스크 되여 있지 않은 부분에 불순물을 선택적으로 도입하고, 고농도 영역을 형성하는 공정. 제2주면에 에피택셜 반도체 층을 형성하는 공정. 상기 고농도 영역이 형성되여 있지 않은 데의 상기 부분위에 위치한 에피택셜 반도체층의 주면에 선택적으로 불순물을 도입하고, 게이지 저항을 위한 반도체 영역을 형성하는 공정. 그리고, 상기 고농도 영역이 형성 되여 있지 않은 데의 상기 부분을 엣칭하고, 다이어 프램을 형성하는 공정.
  7. 특허청구 범위 제6항에 있어서, 반도체 결정 기판으로서 그 주면이(100)면 또는 그 근방에 있는 실리콘 결정 기판을 사용한다.
    ※ 참고사항:최초출원 내용에 의하여 공개하는 것임.
KR1019840000265A 1983-01-26 1984-01-21 압력 감지(壓力感知)반도체 장치와 그 제조방법 KR840007485A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP9800 1983-01-26
JP58009800A JPS59136977A (ja) 1983-01-26 1983-01-26 圧力感知半導体装置とその製造法

Publications (1)

Publication Number Publication Date
KR840007485A true KR840007485A (ko) 1984-12-07

Family

ID=11730266

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840000265A KR840007485A (ko) 1983-01-26 1984-01-21 압력 감지(壓力感知)반도체 장치와 그 제조방법

Country Status (9)

Country Link
US (1) US4588472A (ko)
JP (1) JPS59136977A (ko)
KR (1) KR840007485A (ko)
DE (1) DE3402629A1 (ko)
FR (1) FR2539914B1 (ko)
GB (1) GB2136204B (ko)
HK (1) HK4589A (ko)
IT (1) IT1173138B (ko)
SG (1) SG77888G (ko)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8426915D0 (en) * 1984-10-24 1984-11-28 Marconi Instruments Ltd Fabricating devices on semiconductor substrates
US4665610A (en) * 1985-04-22 1987-05-19 Stanford University Method of making a semiconductor transducer having multiple level diaphragm structure
JPH0750789B2 (ja) * 1986-07-18 1995-05-31 日産自動車株式会社 半導体圧力変換装置の製造方法
CA1314410C (en) * 1986-12-08 1993-03-16 Masanori Nishiguchi Wiring structure of semiconductor pressure sensor
US4897360A (en) * 1987-12-09 1990-01-30 Wisconsin Alumni Research Foundation Polysilicon thin film process
US4977101A (en) * 1988-05-02 1990-12-11 Delco Electronics Corporation Monolithic pressure sensitive integrated circuit
US4885621A (en) * 1988-05-02 1989-12-05 Delco Electronics Corporation Monolithic pressure sensitive integrated circuit
US5110373A (en) * 1988-09-13 1992-05-05 Nanostructures, Inc. Silicon membrane with controlled stress
US5066533A (en) * 1989-07-11 1991-11-19 The Perkin-Elmer Corporation Boron nitride membrane in wafer structure and process of forming the same
DE59008698D1 (de) * 1989-09-07 1995-04-20 Siemens Ag Optokoppler.
DE4003472C2 (de) * 1989-09-22 1999-08-12 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Siliziumplatten
US4978421A (en) * 1989-11-13 1990-12-18 International Business Machines Corporation Monolithic silicon membrane device fabrication process
US5107309A (en) * 1989-12-18 1992-04-21 Honeywell Inc. Double diffused leadout for a semiconductor device
US5289721A (en) * 1990-09-10 1994-03-01 Nippondenso Co., Ltd. Semiconductor pressure sensor
US5225377A (en) * 1991-05-03 1993-07-06 Honeywell Inc. Method for micromachining semiconductor material
US6140143A (en) * 1992-02-10 2000-10-31 Lucas Novasensor Inc. Method of producing a buried boss diaphragm structure in silicon
US5387316A (en) * 1992-12-09 1995-02-07 Motorola, Inc. Wafer etch protection method
DE4309207C2 (de) * 1993-03-22 1996-07-11 Texas Instruments Deutschland Halbleitervorrichtung mit einem piezoresistiven Drucksensor
US5543335A (en) * 1993-05-05 1996-08-06 Ixys Corporation Advanced power device process for low drop
DE4423596A1 (de) * 1994-07-06 1996-01-11 Bosch Gmbh Robert Piezoresistiver Widerstand
DE19932541B4 (de) * 1999-07-13 2011-07-28 Robert Bosch GmbH, 70469 Verfahren zur Herstellung einer Membran
DE10047500B4 (de) * 2000-09-26 2009-11-26 Robert Bosch Gmbh Mikromechanische Membran und Verfahren zu ihrer Herstellung
US6959608B2 (en) * 2002-05-23 2005-11-01 The Board Of Trustees Of The Leland Stanford Junior University Ultra-miniature pressure sensors and probes
US20060276008A1 (en) * 2005-06-02 2006-12-07 Vesa-Pekka Lempinen Thinning
WO2010079662A1 (ja) * 2009-01-06 2010-07-15 アルプス電気株式会社 ピエゾ抵抗型圧力センサ

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1211499A (en) * 1969-03-07 1970-11-04 Standard Telephones Cables Ltd A method of manufacturing semiconductor devices
GB1278210A (en) * 1970-03-14 1972-06-21 Ferranti Ltd Improvements relating to semiconductir strain transducers
US3738880A (en) * 1971-06-23 1973-06-12 Rca Corp Method of making a semiconductor device
US3893228A (en) * 1972-10-02 1975-07-08 Motorola Inc Silicon pressure sensor
DE2644638A1 (de) * 1975-10-06 1977-04-07 Honeywell Inc Verfahren zur herstellung eines halbleiter-druckfuehlers sowie nach diesem verfahren hergestellter druckfuehler
JPS52128066A (en) * 1976-04-20 1977-10-27 Matsushita Electronics Corp Manufacture of semiconductor device
GB1584915A (en) * 1978-05-09 1981-02-18 Standard Telephones Cables Ltd Silicon devices
GB1588669A (en) * 1978-05-30 1981-04-29 Standard Telephones Cables Ltd Silicon transducer
DE2841312C2 (de) * 1978-09-22 1985-06-05 Robert Bosch Gmbh, 7000 Stuttgart Monolithischer Halbleiter-Drucksensor und Verfahren zu dessen Herstellung
US4351706A (en) * 1980-03-27 1982-09-28 International Business Machines Corporation Electrochemically eroding semiconductor device
GB2121646B (en) * 1982-05-13 1985-08-07 Itt Ind Ltd Transducer
JPS59117271A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 圧力感知素子を有する半導体装置とその製造法

Also Published As

Publication number Publication date
IT1173138B (it) 1987-06-18
US4588472A (en) 1986-05-13
DE3402629A1 (de) 1984-07-26
HK4589A (en) 1989-01-27
GB2136204B (en) 1987-07-08
JPS59136977A (ja) 1984-08-06
GB2136204A (en) 1984-09-12
SG77888G (en) 1989-03-23
FR2539914A1 (fr) 1984-07-27
FR2539914B1 (fr) 1986-08-29
IT8419317A0 (it) 1984-01-25
GB8401123D0 (en) 1984-02-22

Similar Documents

Publication Publication Date Title
KR840007485A (ko) 압력 감지(壓力感知)반도체 장치와 그 제조방법
KR850005738A (ko) 다이어프램형 실리콘 압력센서의 제조방법
KR840007315A (ko) 압력감지소자(壓力感知素子)를 가진 반도체 장치와 그 제조법
KR890012364A (ko) 복합 반도체 결정체
KR890015358A (ko) 반도체기판 및 그 제조방법
KR890015355A (ko) 반도체 장치의 제조방법
KR870004523A (ko) 반도체 장치의 유전체 매입형 소자 분리홈의 형성방법
KR900003968A (ko) 반도체 소자 제조 방법
KR910003829A (ko) 고전압 반도체 장치 및 제조 과정
KR910016061A (ko) 반도체장치 및 그 제조방법
KR840008210A (ko) 집적회로의 반도체기판 물질에 관한 게터링(Gettering) 공법
KR900017091A (ko) 반도체장치 및 그 제조방법
KR900019156A (ko) 반도체장치의 제법 및 그 제법에 따른 반도체장치
KR920017213A (ko) 반도체 장치의 소자격리 방법
KR910001889A (ko) 반도체장치
KR920013629A (ko) 반도체장치
KR920013753A (ko) 실리콘단결정을 이용한 기판 및 그의 제조방법
KR970052785A (ko) 반도체 소자 제조방법
KR930003366A (ko) 반도체 장치의 소자 분리방법
KR900017112A (ko) 반도체장치의 제조방법
JPS55153370A (en) Manufacturing method of semiconductor device
KR920001677A (ko) 격리막 제조방법
JPS556891A (en) Manufacturing method of semiconductor device
KR890017780A (ko) 실리콘-니트라이드 게터링공정
KR930018768A (ko) 압력센서 제조 방법

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid