GB1278210A - Improvements relating to semiconductir strain transducers - Google Patents

Improvements relating to semiconductir strain transducers

Info

Publication number
GB1278210A
GB1278210A GB1240970A GB1240970A GB1278210A GB 1278210 A GB1278210 A GB 1278210A GB 1240970 A GB1240970 A GB 1240970A GB 1240970 A GB1240970 A GB 1240970A GB 1278210 A GB1278210 A GB 1278210A
Authority
GB
United Kingdom
Prior art keywords
resistors
housing
associated circuitry
strain
circuitry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1240970A
Inventor
Charles Trevor Jones
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Priority to GB1240970A priority Critical patent/GB1278210A/en
Publication of GB1278210A publication Critical patent/GB1278210A/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/0061—Electrical connection means
    • G01L19/0084—Electrical connection means to the outside of the housing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
    • G01L19/14—Housings
    • G01L19/147—Details about the mounting of the sensor to support or covering means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
    • G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
    • G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Abstract

1278210 Strain gauges FERRANTI Ltd 19 April 1971 [14 March 1970] 12409/70 Heading G1N [Also in Division H1] A strain transducer comprises a semi-conductor body with a thin portion containing strain sensitive resistors and a thicker support portion on or in which associated circuitry is formed. A typical pressure transducer is made by diffusing the resistors and circuit elements and an intermediate isolating ring in a P type epitaxial layer on a N type silicon substrate, and then removing the central part of the substrate by etching followed by spark erosion to provide a thick rimmed diaphragm. The resistors the limbs of which run in a 111 direction consist of four parallel strips at the centre and two diametrically opposed pairs of U-shaped elements so disposed outside the neutral circle that their response is equal and opposite to that of the central strips. Associated circuitry comprising a constant voltage source and line or amplifier 28 is disposed in four peripheral segments. The best matched pairs of resistors are connected into a bridge circuit and to the associated circuitry by aluminium tracks on an oxide passivating layer and/or by gold wires, utilizing bonding pads located on the neutral circle and rim. As seen in Fig. 5, the silicon body 11 is sealed by epoxy resin into a titanium housing with its rim resting on ceramic ring 43. The housing may be plugged into an associated socket containing further circuitry. Trimming and temperature compensating resistors may be located in the silicon body or mounted separately within the housing.
GB1240970A 1970-03-14 1970-03-14 Improvements relating to semiconductir strain transducers Expired GB1278210A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB1240970A GB1278210A (en) 1970-03-14 1970-03-14 Improvements relating to semiconductir strain transducers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB1240970A GB1278210A (en) 1970-03-14 1970-03-14 Improvements relating to semiconductir strain transducers

Publications (1)

Publication Number Publication Date
GB1278210A true GB1278210A (en) 1972-06-21

Family

ID=10004067

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1240970A Expired GB1278210A (en) 1970-03-14 1970-03-14 Improvements relating to semiconductir strain transducers

Country Status (1)

Country Link
GB (1) GB1278210A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168630A (en) * 1976-11-24 1979-09-25 Tokyo Shibaura Electric Co., Ltd. Semiconductor pressure converter
FR2437067A1 (en) * 1978-09-22 1980-04-18 Bosch Gmbh Robert MONOLITHIC SEMICONDUCTOR PRESSURE SENSOR WITH PIEZO-RESISTANT ELEMENTS, AND METHOD FOR THE PRODUCTION THEREOF
EP0024035A1 (en) * 1979-08-14 1981-02-18 Siemens Aktiengesellschaft Piezo-resistive probe
GB2166287A (en) * 1984-10-30 1986-04-30 Burr Brown Corp Pressure-sensitive device
US4588472A (en) * 1983-01-26 1986-05-13 Hitachi, Ltd. Method of fabricating a semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4168630A (en) * 1976-11-24 1979-09-25 Tokyo Shibaura Electric Co., Ltd. Semiconductor pressure converter
FR2437067A1 (en) * 1978-09-22 1980-04-18 Bosch Gmbh Robert MONOLITHIC SEMICONDUCTOR PRESSURE SENSOR WITH PIEZO-RESISTANT ELEMENTS, AND METHOD FOR THE PRODUCTION THEREOF
EP0024035A1 (en) * 1979-08-14 1981-02-18 Siemens Aktiengesellschaft Piezo-resistive probe
US4588472A (en) * 1983-01-26 1986-05-13 Hitachi, Ltd. Method of fabricating a semiconductor device
GB2166287A (en) * 1984-10-30 1986-04-30 Burr Brown Corp Pressure-sensitive device

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees