GB1354009A - Strain sensor - Google Patents
Strain sensorInfo
- Publication number
- GB1354009A GB1354009A GB1354009DA GB1354009A GB 1354009 A GB1354009 A GB 1354009A GB 1354009D A GB1354009D A GB 1354009DA GB 1354009 A GB1354009 A GB 1354009A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- annular
- collectors
- stress
- collector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000004642 Polyimide Substances 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000003822 epoxy resin Substances 0.000 abstract 1
- 239000012530 fluid Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229920000647 polyepoxide Polymers 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/225—Measuring circuits therefor
- G01L1/2262—Measuring circuits therefor involving simple electrical bridges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
- G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
- G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
- G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
1354009 Strain sensing lateral transistor WELWYN ELECTRIC Ltd 15 Dec 1972 [15 Dec 1971] 58191/71 Heading H1K [Also in Division G1] Variation of the current gain of a lateral transistor with applied stress is used as a measure of stress or in a mechanically controlled switch. A typical oxide-passivated silicon PNP transistor comprises a line emitter disposed between two line collectors with base contact regions outside the collectors, the collectors being interconnected via an aluminium track on the oxide or via gold leads bonded to aluminium electrodes on the collectors. High sensitivity is achieved when the minority carrier flow and stress in the transistor are in a 110 direction on a slice cut in the 111 plane or in a 110 or 111 direction in a slice cut in a 110 plane and the current gain is substantially independent of temperature for a certain value of collector current. The transistor may be glued by epoxy resin to a metal beam the strain in which is to be measured, external connections being made via heavy gauge leads bonded to one of a pair of sets of interconnected terminals on a polyimide pad stuck to the beam, the gold leads of the transistor being bonded to the other set of terminals. Alternatively the transistor is formed in a beam or diaphragm to which stress is directly applied and which includes associated circuitry. In an element for measuring fluid pressure a transistor is formed by diffusion into the central area of a peripherally clamped annular silicon diaphragm to provide concentric circular and annular collector regions with an annular emitter between them and a base contact region outside the annular collector. In an alternative element a pair of annular collector regions with an annular emitter between them and an annular base contact region inside the inner collector are disposed near the periphery of a diaphragm. The output voltage from the junction between the transistor and a load resistor may be fed to a plurality of trigger circuits tripping at different voltage levels to give a digital indication of strain which may be encoded for transmission to a remote indicator or recorder, each level being indicated, for example by an alternating current of different frequency.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB5819171 | 1971-12-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1354009A true GB1354009A (en) | 1974-06-05 |
Family
ID=10480991
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1354009D Expired GB1354009A (en) | 1971-12-15 | 1971-12-15 | Strain sensor |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1354009A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6341528B1 (en) | 1999-11-12 | 2002-01-29 | Measurement Specialties, Incorporated | Strain sensing structure with improved reliability |
| WO2002061383A1 (en) * | 2001-01-31 | 2002-08-08 | Silicon Valley Sensors, Inc. | Triangular chip strain sensing structure and corner,edge on a diaphragm |
-
1971
- 1971-12-15 GB GB1354009D patent/GB1354009A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6341528B1 (en) | 1999-11-12 | 2002-01-29 | Measurement Specialties, Incorporated | Strain sensing structure with improved reliability |
| WO2002061383A1 (en) * | 2001-01-31 | 2002-08-08 | Silicon Valley Sensors, Inc. | Triangular chip strain sensing structure and corner,edge on a diaphragm |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |