GB1235077A - Improvements in or relating to pressure transducers - Google Patents
Improvements in or relating to pressure transducersInfo
- Publication number
- GB1235077A GB1235077A GB2323969A GB2323969A GB1235077A GB 1235077 A GB1235077 A GB 1235077A GB 2323969 A GB2323969 A GB 2323969A GB 2323969 A GB2323969 A GB 2323969A GB 1235077 A GB1235077 A GB 1235077A
- Authority
- GB
- United Kingdom
- Prior art keywords
- regions
- pressure
- diaphragm
- type
- contact areas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 4
- 239000010703 silicon Substances 0.000 abstract 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0054—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements integral with a semiconducting diaphragm
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Abstract
1,235,077. Measuring fluid-pressure electrically. STANDARD TELEPHONES & CABLES Ltd. May 7, 1969, No.23239/69. Heading G1N. [Also in Division H1] A fluid-pressure transducer comprises a diaphragm of p-type silicon 2 supported by a layer of n-type silicon 3 which layers are intrinsic with a silicon substrate 1. In a first embodiment, Fig.1G, n-type regions 12, 13 are diffused into the p-type to form strain sensing resistors. The two regions 13 are connected in series by an aluminium or nickel contact area 11, others 9, 10 forming contacts for the regions 13 and that 12 respectively. In use application of pressure to the silicon oxide layer 5 causes the diaphragm to be deflected into the aperture thereby stretching the diffused regions 13 and lowering their resistances, the region 12 and those 13 being connected as two arms of a bridge circuit. In a second embodiment Figs.2A, 2B the p-type silicon layers 12 forms the strain-sensitive resistance element. A bias current is passed, in use, between contact areas 15A and others 15B are used to provide an output voltage indicative of applied pressure. Curved stop contacts 17 of metal connect parts of the diaphragm lying along equipotential lines between spaced contact areas 15A. Metallic areas 16 are provided one between each pair of contact areas 15A and 15B to give a desired output potential difference in the absence of an applied pressure. Details of methods of manufacture of the transducer are given (see Division H1). It is stated that the substrate may as an alternative be of germonium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2323969A GB1235077A (en) | 1969-05-07 | 1969-05-07 | Improvements in or relating to pressure transducers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB2323969A GB1235077A (en) | 1969-05-07 | 1969-05-07 | Improvements in or relating to pressure transducers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1235077A true GB1235077A (en) | 1971-06-09 |
Family
ID=10192423
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2323969A Expired GB1235077A (en) | 1969-05-07 | 1969-05-07 | Improvements in or relating to pressure transducers |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1235077A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0001038A1 (en) * | 1977-07-05 | 1979-03-21 | International Business Machines Corporation | A method for making a silicon mask and its utilisation |
| US4203128A (en) | 1976-11-08 | 1980-05-13 | Wisconsin Alumni Research Foundation | Electrostatically deformable thin silicon membranes |
| US4234361A (en) | 1979-07-05 | 1980-11-18 | Wisconsin Alumni Research Foundation | Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer |
| EP0048291B1 (en) * | 1980-09-19 | 1985-07-03 | Ibm Deutschland Gmbh | Structure with a silicon body that presents an aperture and method of making this structure |
| US5753601A (en) * | 1991-01-25 | 1998-05-19 | Ashland Inc | Organic stripping composition |
-
1969
- 1969-05-07 GB GB2323969A patent/GB1235077A/en not_active Expired
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4203128A (en) | 1976-11-08 | 1980-05-13 | Wisconsin Alumni Research Foundation | Electrostatically deformable thin silicon membranes |
| EP0001038A1 (en) * | 1977-07-05 | 1979-03-21 | International Business Machines Corporation | A method for making a silicon mask and its utilisation |
| US4234361A (en) | 1979-07-05 | 1980-11-18 | Wisconsin Alumni Research Foundation | Process for producing an electrostatically deformable thin silicon membranes utilizing a two-stage diffusion step to form an etchant resistant layer |
| EP0048291B1 (en) * | 1980-09-19 | 1985-07-03 | Ibm Deutschland Gmbh | Structure with a silicon body that presents an aperture and method of making this structure |
| US5753601A (en) * | 1991-01-25 | 1998-05-19 | Ashland Inc | Organic stripping composition |
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