KR850005738A - 다이어프램형 실리콘 압력센서의 제조방법 - Google Patents

다이어프램형 실리콘 압력센서의 제조방법 Download PDF

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Publication number
KR850005738A
KR850005738A KR1019850000462A KR850000462A KR850005738A KR 850005738 A KR850005738 A KR 850005738A KR 1019850000462 A KR1019850000462 A KR 1019850000462A KR 850000462 A KR850000462 A KR 850000462A KR 850005738 A KR850005738 A KR 850005738A
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South Korea
Prior art keywords
single crystal
silicon layer
crystal silicon
pressure sensor
diaphragm
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KR1019850000462A
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English (en)
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KR920007793B1 (ko
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가즈지 야마다 (외 5)
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미다 가쓰시게
가부시기 가이샤 히다찌 세이사꾸쇼
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Publication of KR850005738A publication Critical patent/KR850005738A/ko
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/012—Bonding, e.g. electrostatic for strain gauges
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/159—Strain gauges
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/168—V-Grooves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49103—Strain gauge making

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

내용 없음

Description

다이어프램형 실리콘 압력센서의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제4도는 본원 발명의 제조방법에 의해 얻어지는 다이어프램형 실리콘 압력센서의 대표적 구조를 일부 단면으로 나타낸 사시도.
제5도(a)∼제5도(e)는 본원 발명의 일실시예에 의한 제조공정을 나타낸 단면도.
제6도(a)∼제6도(f)는 본원 발명의 다른 실시예에 의한 제조공정을 나타낸 단면도.
제7도는 제5도의 실시예의 변형예를 설명하기 위한 단면도.

Claims (8)

  1. 제1 및 제2 주표면을 갖는 단결정 실리콘의 기판의 제1 주표면상에 소정 두께의 산화막을 형성하는 제1스텝과, 상기 산화막상에 다결정 실리콘층을 형성하는 제2 스텝과, 상기 다결정 실리콘층을 그 가열 용융에 의해 재결정화하여 단결정 실리콘층으로 변환하는 제3 스텝과, 상기 산화막을 에칭스토퍼로서 사용하여 상기 기판의 소정부분을 상기 기판의 제2 주표면측에서 상기 산화막에 이르기까지 에칭하여 압력센서의 다이어프램부를 제공하는 제4 스텝을 갖는 것을 특징으로 하는 다이어프램형 실리콘 압력센서의 제조방법.
  2. 상기 제3 스텝 다음에, 상기 단결정 실리콘층상에 추가적인 단결정 실리콘층을 에피택셜로 성장시키는 스텝을 다시 포함하는 것을 특징으로 하는 특허청구의 범위 1 기재의 다이어프램형 실리콘 압력센서의 제조방법.
  3. 상기 제1 및 제2 스텝사이에 상기 산화막을 부분적으로 제거하여 상기 기판의 제1 주표면을 부분적으로 노출시키는 스텝을 다시 포함하는 것을 특징으로 하는 특허청구의 범위 1 기재의 다이프램형 실리콘 압력센서의 제조방법.
  4. 상기 제3 스텝 다음에 상기 단결정 실리콘층상에 추가적인 단결정 실리콘층을 에피택셜로 성장시키는 스텝을 다시 포함하는 것을 특징으로 하는 특허청구의 범위 3 기재의 다이프램형 실리콘 압력센서의 제조방법.
  5. 상기 제3 스텝 다음에, 상기 단결정 실리콘층의 표면에서 이 단결정 실리콘층과는 반대의 도전형의 불순물을 선택적으로 확산하여 소정패터언의 피에조저항으로서 작용하는 확산영역을 형성하는 것을 특징으로 하는 특허청구의 범위 1 기재의 다이어프램형 실리콘 압력센서의 제조방법.
  6. 상기 추가적인 단결정 실리콘층의 표면에서 이 단결정 실리콘층과는 반대의 도전형의 불순물을 선택적으로 확산하여 소정 패터언의 피에조저항으로서 작용는 확산영역을 형성하는 것을 특징으로 하는 특허청구의 범위 3 기재의 다이어프램형 실리콘 압력센서의 제조방법.
  7. 상기 제3 스텝 다음에 상기 단결정 실리콘층의 표면에서 이 단결정 실리콘층과는 반대의 도전형의 불순물을 선택적으로 확산하여 소정 패터언의 피에조저항으로서 작용하는 확산영역을 형성하는 것을 특징으로 하는 특허청구의 범위 3 기재의 다이어프램형 실리콘 압력센서의 제조방법.
  8. 상기 제3 및 제4 스텝사이에, 상기 단결정층 실리콘층을 선택적으로 제거하여 소정의 패터언만 남기고, 이 잔류부분을 피에조저항으로 하는 스텝을 다시 포함하는 것을 특징으로 하는 특허청구의 범위 3 기재의 다이어프램형 실리콘 압력센서의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019850000462A 1984-01-27 1985-01-25 다이어프램형 실리콘압력센서의 제조방법 KR920007793B1 (ko)

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Application Number Priority Date Filing Date Title
JP59-13672 1984-01-27
JP59013672A JPH0712086B2 (ja) 1984-01-27 1984-01-27 ダイヤフラムセンサの製造方法
JP13672 1984-01-27

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KR850005738A true KR850005738A (ko) 1985-08-28
KR920007793B1 KR920007793B1 (ko) 1992-09-17

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US (1) US4670969A (ko)
EP (1) EP0150827B1 (ko)
JP (1) JPH0712086B2 (ko)
KR (1) KR920007793B1 (ko)
DE (1) DE3571694D1 (ko)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1314410C (en) * 1986-12-08 1993-03-16 Masanori Nishiguchi Wiring structure of semiconductor pressure sensor
US4721938A (en) * 1986-12-22 1988-01-26 Delco Electronics Corporation Process for forming a silicon pressure transducer
US5167158A (en) * 1987-10-07 1992-12-01 Kabushiki Kaisha Komatsu Seisakusho Semiconductor film pressure sensor and method of manufacturing same
GB2215914B (en) * 1988-03-17 1991-07-03 Emi Plc Thorn A microengineered diaphragm pressure switch and a method of manufacture thereof
US4808549A (en) * 1988-05-27 1989-02-28 Ford Motor Company Method for fabricating a silicon force transducer
DE68913257T2 (de) * 1988-10-02 1994-07-07 Canon Kk Gegenstand aus Kristall und Verfahren zu seiner Herstellung.
FR2643148B1 (fr) * 1989-02-15 1991-12-06 Schlumberger Ind Sa Capteur de pression du type semiconducteur sur isolant
US5223444A (en) * 1989-02-15 1993-06-29 Societe D'applications Generales Method for making a pressure sensor of the semiconductor-on-insulator type
US4889590A (en) * 1989-04-27 1989-12-26 Motorola Inc. Semiconductor pressure sensor means and method
FR2656738B1 (fr) * 1989-12-29 1995-03-17 Telemecanique Procede pour fabriquer un dispositif semiconducteur, dispositif et composant semiconducteur obtenus par le procede.
JP2890601B2 (ja) * 1990-02-08 1999-05-17 株式会社デンソー 半導体センサ
DE4017265A1 (de) * 1990-05-29 1991-12-05 Fraunhofer Ges Forschung Mikromechanisches bauelement und verfahren zur herstellung desselben
JPH04105369A (ja) * 1990-08-24 1992-04-07 Honda Motor Co Ltd 半導体センサ
US5068203A (en) * 1990-09-04 1991-11-26 Delco Electronics Corporation Method for forming thin silicon membrane or beam
CA2058024A1 (en) * 1990-12-19 1992-06-20 Jeffrey S. Haviland Integrated sensor array
US5969591A (en) * 1991-03-28 1999-10-19 The Foxboro Company Single-sided differential pressure sensor
US5225377A (en) * 1991-05-03 1993-07-06 Honeywell Inc. Method for micromachining semiconductor material
US5155061A (en) * 1991-06-03 1992-10-13 Allied-Signal Inc. Method for fabricating a silicon pressure sensor incorporating silicon-on-insulator structures
US6903084B2 (en) 1991-08-29 2005-06-07 Sterix Limited Steroid sulphatase inhibitors
DE4201910C2 (de) * 1991-11-29 1995-05-11 Fraunhofer Ges Forschung Verfahren zum Herstellen einer Halbleiterstruktur für eine integrierte Leistungsschaltung mit einem vertikalen Leistungsbauelement
US6140143A (en) * 1992-02-10 2000-10-31 Lucas Novasensor Inc. Method of producing a buried boss diaphragm structure in silicon
US5616514A (en) * 1993-06-03 1997-04-01 Robert Bosch Gmbh Method of fabricating a micromechanical sensor
DE4318466B4 (de) * 1993-06-03 2004-12-09 Robert Bosch Gmbh Verfahren zur Herstellung eines mikromechanischen Sensors
US5738731A (en) * 1993-11-19 1998-04-14 Mega Chips Corporation Photovoltaic device
DE69512544T2 (de) * 1994-03-18 2000-05-25 Foxboro Co Halbleiter-Druckwandler mit Einkristall-Silizium-Membran und Einkristall-Dehnungsmessstreifen und Herstellungsverfahren dazu
US6247369B1 (en) 1995-04-04 2001-06-19 The United States Of America As Represented By The Administrator Of The National Aeronautics Of Space Administration Multi-channel electronically scanned cryogenic pressure sensor and method for making same
US5591679A (en) * 1995-04-12 1997-01-07 Sensonor A/S Sealed cavity arrangement method
JP3624597B2 (ja) * 1996-12-10 2005-03-02 株式会社デンソー 半導体装置及びその製造方法
TW365057B (en) * 1997-12-31 1999-07-21 Ind Tech Res Inst Manufacturing method for micro-mirror on the silicon substrate
US6297069B1 (en) * 1999-01-28 2001-10-02 Honeywell Inc. Method for supporting during fabrication mechanical members of semi-conductive dies, wafers, and devices and an associated intermediate device assembly
US7335650B2 (en) * 2000-01-14 2008-02-26 Sterix Limited Composition
US6564642B1 (en) 2000-11-02 2003-05-20 Kavlico Corporation Stable differential pressure measuring system
US6581468B2 (en) 2001-03-22 2003-06-24 Kavlico Corporation Independent-excitation cross-coupled differential-pressure transducer
JP4890689B2 (ja) * 2001-07-24 2012-03-07 オリンパス株式会社 三次元構造体の製造方法及び揺動体の製造方法
US6608370B1 (en) * 2002-01-28 2003-08-19 Motorola, Inc. Semiconductor wafer having a thin die and tethers and methods of making the same
JP2007017254A (ja) * 2005-07-07 2007-01-25 Mitsubishi Electric Corp 半導体圧力センサの製造方法
TWI305474B (en) * 2006-04-10 2009-01-11 Touch Micro System Tech Method of fabricating a diaphragm of a capacitive microphone device
CN106872527B (zh) * 2017-01-16 2019-10-29 沈阳工业大学 单晶高温合金再结晶的检测方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3819431A (en) * 1971-10-05 1974-06-25 Kulite Semiconductor Products Method of making transducers employing integral protective coatings and supports
US3893228A (en) * 1972-10-02 1975-07-08 Motorola Inc Silicon pressure sensor
GB1399988A (en) * 1972-10-02 1975-07-02 Motorola Inc Silicon pressure sensor
US3941629A (en) * 1974-04-11 1976-03-02 General Motors Corporation Diaphragm formation on silicon substrate
US4003127A (en) * 1974-11-25 1977-01-18 General Motors Corporation Polycrystalline silicon pressure transducer
US4141765A (en) * 1975-02-17 1979-02-27 Siemens Aktiengesellschaft Process for the production of extremely flat silicon troughs by selective etching with subsequent rate controlled epitaxial refill
JPS5936434B2 (ja) * 1975-12-24 1984-09-04 株式会社デンソー ハンドウタイダイアフラムノセイゾウホウホウ
NL7810549A (nl) * 1978-10-23 1980-04-25 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting.
US4323417A (en) * 1980-05-06 1982-04-06 Texas Instruments Incorporated Method of producing monocrystal on insulator
US4523964A (en) * 1981-02-12 1985-06-18 Becton, Dickinson And Company High temperature layered silicon structures
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
US4494300A (en) * 1981-06-30 1985-01-22 International Business Machines, Inc. Process for forming transistors using silicon ribbons as substrates
US4510671A (en) * 1981-08-31 1985-04-16 Kulite Semiconductor Products, Inc. Dielectrically isolated transducer employing single crystal strain gages
US4522661A (en) * 1983-06-24 1985-06-11 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Low defect, high purity crystalline layers grown by selective deposition

Also Published As

Publication number Publication date
KR920007793B1 (ko) 1992-09-17
EP0150827A3 (en) 1986-08-27
JPH0712086B2 (ja) 1995-02-08
EP0150827A2 (en) 1985-08-07
JPS60158675A (ja) 1985-08-20
DE3571694D1 (en) 1989-08-24
EP0150827B1 (en) 1989-07-19
US4670969A (en) 1987-06-09

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