KR950020963A - 다공질실리콘을 이용한 반도체 장치의 제조방법 - Google Patents

다공질실리콘을 이용한 반도체 장치의 제조방법 Download PDF

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KR950020963A
KR950020963A KR1019940032959A KR19940032959A KR950020963A KR 950020963 A KR950020963 A KR 950020963A KR 1019940032959 A KR1019940032959 A KR 1019940032959A KR 19940032959 A KR19940032959 A KR 19940032959A KR 950020963 A KR950020963 A KR 950020963A
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South Korea
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layer
silicon
porous silicon
substrate
epitaxial layer
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KR1019940032959A
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KR0155141B1 (ko
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이종현
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손병기
경북대학교 센서기술연구소
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

본 발명의 다공질실리콘을 이용한 실리콘 다이아프램의 제조방법은 n형 실리콘기판을 제조하는 단계와; 상기 실리콘 기판에 n+불순물을 확산시켜 상기 기판의 상면의 소정의 부분에 n+확산영역을 형성하는 단계와; n형 실리콘 에피택셜층을 성장시키는 단계와; 상기 n형 실리콘 에피택셜층에 통공(through-hole)을 형성하여 상기 n+확산영역중 소정부분을 노출시키는 단계와; 불산(HF)용액에서 양극반응을 수행하여 상기 n+확산영역을 다공질실리콘층으로 만드는 단계와; 상기 다공질실리콘층을 에칭하여 에어-갭을 형성하는 단계 및 상기 통공을 밀봉하는 단계를 포함한다.

Description

다공질실리콘을 이용한 반도체 장치의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 (A) 내지 (F)는 본 발명의 방법에 따른 다이아프램의 제조공정을 설명하기 위한 단면도이고,
제2도는 (A) 내지 (G)는 본 발명의 방법에 따른 압력센서의 제조공정을 설명하기 위한 단면도이다.

Claims (2)

  1. 실리콘기판을 제조하는 단계와; 상기 실리콘기판에 n+불순물을 확산시켜 상기 기판의 상면의 소정의 부분에 n+확산영역을 형성하는 단계와; n형 실리콘 에피택셜층을 성장시키는 단계와; 상기 n형 실리콘 에피택셜층에 통공(through-hole)을 형성하여 상기 n+확산영역중 소정부분을 노출시키는 단계와; 불산(HF)용액에서 양극반응을 수행하여 상기 n+확산영역을 다공질실리콘층으로 만드는 단계와; 상기 다공질실리콘층을 에칭하여 에어-갭을 형성하는 단계 및; 상기 통공을 밀봉하는 단계를 포함하는 다공질실리콘을 이용한 반도체 장치의 제조방법.
  2. n형 실리콘기판을 제조하는 단계와; 상기 실리콘기판에 n+불순물을 확산시켜 상기 기판의 상면에 소정의 부분에 n+확산영역을 형성하는 단계와; n형 실리콘 에피택셜층을 성장시키는 단계와; 상기 n형 실리콘 에피택셜층에 P형 압저항을 형성시키는 단계와; 상기 압저항이 형성된 n형 실리콘 에피택셜층상에 Ni/Cr/Au 금속층을 증착시키는 단계와; 상기 Ni/Cr/Au 금속층 및 n형 실리콘 에피택셜층에 통공을 형성하여 상기 n+확산영역중 소정부분을 노출시키는 단계와 ; 불산 (HF) 용액에서 양극반응을 수행하기 상기 n+</SP 확산영역을 다공질실리콘층으로 만드는 단계와; 상기 Ni/Cr/Au 금속층을 패터닝하는 단계와; 상기 다공질실리콘층을 에칭하여 에어갭을 형성하는 단계 및; 상기 통공을 밀봉하는 단계를 포함하는 다공질실리콘을 이용한 반도체 장치의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940032959A 1993-12-24 1994-12-06 다공질실리콘을 이용한 반도체 장치의 제조방법 KR0155141B1 (ko)

Applications Claiming Priority (2)

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KR1993-29499 1993-12-24
KR930029499 1993-12-24

Publications (2)

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KR950020963A true KR950020963A (ko) 1995-07-26
KR0155141B1 KR0155141B1 (ko) 1998-10-15

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US (1) US5445991A (ko)
JP (1) JP2582229B2 (ko)
KR (1) KR0155141B1 (ko)

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KR100329751B1 (ko) * 1995-12-16 2002-10-25 주식회사 하이닉스반도체 다공질실리콘막을이용한산화막제조방법

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Also Published As

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JPH0837314A (ja) 1996-02-06
JP2582229B2 (ja) 1997-02-19
US5445991A (en) 1995-08-29
KR0155141B1 (ko) 1998-10-15

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