DE68913257T2 - Gegenstand aus Kristall und Verfahren zu seiner Herstellung. - Google Patents

Gegenstand aus Kristall und Verfahren zu seiner Herstellung.

Info

Publication number
DE68913257T2
DE68913257T2 DE68913257T DE68913257T DE68913257T2 DE 68913257 T2 DE68913257 T2 DE 68913257T2 DE 68913257 T DE68913257 T DE 68913257T DE 68913257 T DE68913257 T DE 68913257T DE 68913257 T2 DE68913257 T2 DE 68913257T2
Authority
DE
Germany
Prior art keywords
manufacture
crystal article
article
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68913257T
Other languages
English (en)
Other versions
DE68913257D1 (de
Inventor
Nobuhiko Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE68913257D1 publication Critical patent/DE68913257D1/de
Publication of DE68913257T2 publication Critical patent/DE68913257T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
DE68913257T 1988-10-02 1989-09-29 Gegenstand aus Kristall und Verfahren zu seiner Herstellung. Expired - Fee Related DE68913257T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24781688 1988-10-02
JP1255525A JP2603342B2 (ja) 1988-10-02 1989-09-29 結晶物品及びその形成方法

Publications (2)

Publication Number Publication Date
DE68913257D1 DE68913257D1 (de) 1994-03-31
DE68913257T2 true DE68913257T2 (de) 1994-07-07

Family

ID=26538435

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68913257T Expired - Fee Related DE68913257T2 (de) 1988-10-02 1989-09-29 Gegenstand aus Kristall und Verfahren zu seiner Herstellung.

Country Status (4)

Country Link
US (1) US5582641A (de)
EP (1) EP0365166B1 (de)
JP (1) JP2603342B2 (de)
DE (1) DE68913257T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69126949T2 (de) * 1990-11-15 1998-02-12 Canon Kk Verfahren zur Herstellung einer einkristallinen Schicht
GB2362754A (en) * 2000-05-25 2001-11-28 Nanogate Ltd A method of growing single crystals
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
CN112008081B (zh) * 2020-10-21 2021-02-19 沈阳铸造研究所有限公司 一种基于激光增材制造高熔点Kelvin结构点阵金属的制备方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1073111B (de) * 1954-12-02 1960-01-14 Siemens Schuckertwerke Aktiengesellschaft Berlin und Erlangen Verfahren zur Herstellung eines Flachentransistors mit einer Oberflachenschicht erhöhter Storstellenkonzentration an den freien Stellen zwischen den Elektroden an einem einkristallmen Halbleiterkörper
US2921362A (en) * 1955-06-27 1960-01-19 Honeywell Regulator Co Process for the production of semiconductor devices
US3016313A (en) * 1958-05-15 1962-01-09 Gen Electric Semiconductor devices and methods of making the same
US3385729A (en) * 1964-10-26 1968-05-28 North American Rockwell Composite dual dielectric for isolation in integrated circuits and method of making
US3514346A (en) * 1965-08-02 1970-05-26 Gen Electric Semiconductive devices having asymmetrically conductive junction
US3425879A (en) * 1965-10-24 1969-02-04 Texas Instruments Inc Method of making shaped epitaxial deposits
NL7306948A (de) * 1973-05-18 1974-11-20
JPH0712086B2 (ja) * 1984-01-27 1995-02-08 株式会社日立製作所 ダイヤフラムセンサの製造方法
CA1330191C (en) * 1986-03-31 1994-06-14 Jinsho Matsuyama Method for forming crystal and crystal article obtained by said method
CA1331950C (en) * 1987-03-26 1994-09-13 Hiroyuki Tokunaga Iii - v group compound crystal article and process for producing the same
JPS63239187A (ja) * 1987-03-27 1988-10-05 Canon Inc 結晶物品
JP2592833B2 (ja) * 1987-03-27 1997-03-19 キヤノン株式会社 結晶形成方法

Also Published As

Publication number Publication date
JPH02192496A (ja) 1990-07-30
DE68913257D1 (de) 1994-03-31
US5582641A (en) 1996-12-10
JP2603342B2 (ja) 1997-04-23
EP0365166A1 (de) 1990-04-25
EP0365166B1 (de) 1994-02-23

Similar Documents

Publication Publication Date Title
DE69422649T2 (de) Gegenstand mit Metallbeschichtung und Verfahren zu seiner Herstellung
DE68909712T2 (de) Biomedizinisches Material und Verfahren zu seiner Herstellung.
DE69201797D1 (de) Strukturierter träger und verfahren zu seiner herstellung.
ATE86947T1 (de) Siliziumpulver und verfahren zu seiner herstellung.
DE69231787D1 (de) Medizinischer Artikel und Verfahren zu seiner Herstellung
DE3860618D1 (de) Filmtraeger und verfahren zu seiner herstellung.
DE68907057T2 (de) Nährstoffzusammensetzung und verfahren zu deren herstellung.
DE68927240T2 (de) Kunststoffbehälter und Verfahren zu seiner Herstellung
DE69032447T2 (de) Thermistor und Verfahren zu seiner Herstellung
DE3887128T2 (de) Konservierungsmaterial und Verfahren zu seiner Herstellung.
DE68913254D1 (de) Gegenstand aus Kristall und Verfahren zu seiner Herstellung.
DE68914598T2 (de) Keramischer Verbundwerkstoff und Verfahren zu seiner Herstellung.
DE3881568T2 (de) Supraleiter und Verfahren zu seiner Herstellung.
DE3853900T2 (de) Supraleitendes Material und Verfahren zu seiner Herstellung.
ATA22489A (de) Geschirrspülmittel und verfahren zu seiner herstellung
ATA60190A (de) Sandwichbauteil und verfahren zu seiner herstellung
DE3851192T2 (de) Hologon und Verfahren zu seiner Herstellung.
DE68913257T2 (de) Gegenstand aus Kristall und Verfahren zu seiner Herstellung.
DE3852971D1 (de) Supraleitender Werkstoff und Verfahren zu seiner Herstellung.
DE3867957D1 (de) Modifiziertes polytetrafluoraethylen und verfahren zu seiner herstellung.
DE68914104D1 (de) Leitfähiges Material und Verfahren zu seiner Herstellung.
DE68903581D1 (de) In der landwirtschaft verwendbare substanz und verfahren zu ihrer herstellung.
DE58908462D1 (de) Flechtband und Verfahren zu seiner Herstellung.
DE69114164D1 (de) Supraleitendes Oxyd und Verfahren zu seiner Herstellung.
DE69300932D1 (de) Supraleitender Film und Verfahren zu seiner Herstellung.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee