KR850002673A - 반도체장치 제조방법 - Google Patents

반도체장치 제조방법

Info

Publication number
KR850002673A
KR850002673A KR1019840005769A KR840005769A KR850002673A KR 850002673 A KR850002673 A KR 850002673A KR 1019840005769 A KR1019840005769 A KR 1019840005769A KR 840005769 A KR840005769 A KR 840005769A KR 850002673 A KR850002673 A KR 850002673A
Authority
KR
South Korea
Prior art keywords
semiconductor device
device manufacturing
manufacturing
semiconductor
Prior art date
Application number
KR1019840005769A
Other languages
English (en)
Other versions
KR900000819B1 (ko
Inventor
요시히로 오시까와
Original Assignee
후지쓰 가부시끼사이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰 가부시끼사이샤 filed Critical 후지쓰 가부시끼사이샤
Publication of KR850002673A publication Critical patent/KR850002673A/ko
Application granted granted Critical
Publication of KR900000819B1 publication Critical patent/KR900000819B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1019840005769A 1983-09-26 1984-09-20 반도체장치 제조방법 KR900000819B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58177259A JPS6068658A (ja) 1983-09-26 1983-09-26 半導体装置の製造方法
JP58-177259 1983-09-26

Publications (2)

Publication Number Publication Date
KR850002673A true KR850002673A (ko) 1985-05-15
KR900000819B1 KR900000819B1 (ko) 1990-02-17

Family

ID=16027940

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019840005769A KR900000819B1 (ko) 1983-09-26 1984-09-20 반도체장치 제조방법

Country Status (4)

Country Link
EP (1) EP0142252B1 (ko)
JP (1) JPS6068658A (ko)
KR (1) KR900000819B1 (ko)
DE (1) DE3482432D1 (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5210042A (en) * 1983-09-26 1993-05-11 Fujitsu Limited Method of producing semiconductor device
JP2507306B2 (ja) * 1985-11-01 1996-06-12 株式会社東芝 半導体装置の製造方法
IT1191755B (it) * 1986-04-29 1988-03-23 Sgs Microelettronica Spa Processo di fabbricazione per celle eprom con dielettrico ossido-nitruro-ossido
JPS63307723A (ja) * 1987-06-09 1988-12-15 Sony Corp 半導体装置の製造方法
US5242848A (en) * 1990-01-22 1993-09-07 Silicon Storage Technology, Inc. Self-aligned method of making a split gate single transistor non-volatile electrically alterable semiconductor memory device
US5572054A (en) * 1990-01-22 1996-11-05 Silicon Storage Technology, Inc. Method of operating a single transistor non-volatile electrically alterable semiconductor memory device
US5739569A (en) * 1991-05-15 1998-04-14 Texas Instruments Incorporated Non-volatile memory cell with oxide and nitride tunneling layers
DE69624107T2 (de) * 1996-07-18 2003-06-05 St Microelectronics Srl Flash-EEPROM-Zelle mit einziger Polysiliziumschicht und Verfahren zur Herstellung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2921793A1 (de) * 1979-05-29 1980-12-04 Fujitsu Ltd Verfahren zum herstellen einer halbleitervorrichtung mit ionenimplantation
JPS584966A (ja) * 1981-06-30 1983-01-12 Fujitsu Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
EP0142252A3 (en) 1986-12-03
EP0142252A2 (en) 1985-05-22
EP0142252B1 (en) 1990-06-06
KR900000819B1 (ko) 1990-02-17
DE3482432D1 (de) 1990-07-12
JPS6068658A (ja) 1985-04-19

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030206

Year of fee payment: 14

LAPS Lapse due to unpaid annual fee