JPS6472997A - Heat treatment of compound semiconductor single crystal - Google Patents
Heat treatment of compound semiconductor single crystalInfo
- Publication number
- JPS6472997A JPS6472997A JP23150387A JP23150387A JPS6472997A JP S6472997 A JPS6472997 A JP S6472997A JP 23150387 A JP23150387 A JP 23150387A JP 23150387 A JP23150387 A JP 23150387A JP S6472997 A JPS6472997 A JP S6472997A
- Authority
- JP
- Japan
- Prior art keywords
- temp
- single crystal
- semiconductor single
- heat treatment
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE:To increase the resistivity of a low-resistance compd. semiconductor single crystal and to decrease the concn. of EL2 by maintaining the compd. semiconductor single crystal at a specified temp. after the growth thereof and further lowering the temp. of the crystal at a specified rate. CONSTITUTION:The compd. semiconductor single crystal is maintained at the specified temp. in the temp. range of 1,000 deg.C-m.p. after the growth thereof and thereafter, the temp. of the crystal is lowered at 20-250 deg.C rate per minute. Since the heat treatment is executed at a relatively high temp. of >=1,000 deg.C according to this heat treatment method, the resistivity is increased and the concn. of EL2 is decreased; in addition, the temp. falling speed is not excessively high and, therefore, there is no possibility of increasing the dislocation density. The fluctuation in the resistivity, movibility and concn. of EL2 is decreased and the electrical characteristics and optical characteristics over the entire part of the crystal are uniformized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23150387A JPS6472997A (en) | 1987-09-14 | 1987-09-14 | Heat treatment of compound semiconductor single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23150387A JPS6472997A (en) | 1987-09-14 | 1987-09-14 | Heat treatment of compound semiconductor single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6472997A true JPS6472997A (en) | 1989-03-17 |
| JPH0411520B2 JPH0411520B2 (en) | 1992-02-28 |
Family
ID=16924514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23150387A Granted JPS6472997A (en) | 1987-09-14 | 1987-09-14 | Heat treatment of compound semiconductor single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6472997A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59190300A (en) * | 1983-04-08 | 1984-10-29 | Hitachi Ltd | Method and apparatus for production of semiconductor |
| JPS60210591A (en) * | 1984-04-05 | 1985-10-23 | Hitachi Cable Ltd | Production of semiinsulating gaas single crystal |
| JPS62162700A (en) * | 1986-01-09 | 1987-07-18 | Furukawa Electric Co Ltd:The | Production of compound semiconductor ingot |
-
1987
- 1987-09-14 JP JP23150387A patent/JPS6472997A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59190300A (en) * | 1983-04-08 | 1984-10-29 | Hitachi Ltd | Method and apparatus for production of semiconductor |
| JPS60210591A (en) * | 1984-04-05 | 1985-10-23 | Hitachi Cable Ltd | Production of semiinsulating gaas single crystal |
| JPS62162700A (en) * | 1986-01-09 | 1987-07-18 | Furukawa Electric Co Ltd:The | Production of compound semiconductor ingot |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0411520B2 (en) | 1992-02-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |