GB1186127A - Method and Apparatus for Doping Semiconductors. - Google Patents

Method and Apparatus for Doping Semiconductors.

Info

Publication number
GB1186127A
GB1186127A GB4548768A GB4548768A GB1186127A GB 1186127 A GB1186127 A GB 1186127A GB 4548768 A GB4548768 A GB 4548768A GB 4548768 A GB4548768 A GB 4548768A GB 1186127 A GB1186127 A GB 1186127A
Authority
GB
United Kingdom
Prior art keywords
melt
rod
dopant
ions
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4548768A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of GB1186127A publication Critical patent/GB1186127A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,186,127. Doping with ions. DOW CORNING CORP. 25 Sept., 1968 [5 Jan., 1968], No. 45487/68. Heading BIS. A doped rod may be pulled from a melt of semi-conductor material, e.g. Si or Ge, by impingement on the surface of the melt by a focused ionic beam of dopant, e.g. B, Al, Sb, P, Ag, Au, in a partial vacuum. The ions may be generated from solid or gas. They may originate from at least one electrode of semiconductor material containing the dopant. The ion beam may be focused to 1/10th of the melt area. A doped rod having a resistivity of 100 ohm. cm. may be produced using an ion beam current of 6 microamps and an accelerating potential of 5 kilovolts. A resistivity gradient across the rod may be produced by focusing a plurality of ion beams at different spaced points. The melt may be formed by induction, infra-red or electron beam heating. As shown, a crystal 11 being pulled from a molten zone 12 formed on a rod 13 by an induction coil 14, is doped by impingement of a beam 16 of dopant ions on zone 12.
GB4548768A 1968-01-05 1968-09-25 Method and Apparatus for Doping Semiconductors. Expired GB1186127A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69605768A 1968-01-05 1968-01-05

Publications (1)

Publication Number Publication Date
GB1186127A true GB1186127A (en) 1970-04-02

Family

ID=24795535

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4548768A Expired GB1186127A (en) 1968-01-05 1968-09-25 Method and Apparatus for Doping Semiconductors.

Country Status (3)

Country Link
BE (1) BE726473A (en)
GB (1) GB1186127A (en)
NL (1) NL6900129A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2137524A (en) * 1983-04-08 1984-10-10 Hitachi Ltd A process for fabricating a semiconductor material and an apparatus therefor
WO2001006041A1 (en) * 1999-07-19 2001-01-25 Topsil Semiconductor Materials A/S Method and apparatus for production of a doped feed rod by ion implantation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2137524A (en) * 1983-04-08 1984-10-10 Hitachi Ltd A process for fabricating a semiconductor material and an apparatus therefor
WO2001006041A1 (en) * 1999-07-19 2001-01-25 Topsil Semiconductor Materials A/S Method and apparatus for production of a doped feed rod by ion implantation

Also Published As

Publication number Publication date
BE726473A (en) 1969-07-03
NL6900129A (en) 1969-07-08

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Legal Events

Date Code Title Description
PS Patent sealed
PLNP Patent lapsed through nonpayment of renewal fees