GB1057127A - Improvements in or relating to the fabrication of micro-plates, particularly micro-seiconductor devices - Google Patents

Improvements in or relating to the fabrication of micro-plates, particularly micro-seiconductor devices

Info

Publication number
GB1057127A
GB1057127A GB4095663A GB4095663A GB1057127A GB 1057127 A GB1057127 A GB 1057127A GB 4095663 A GB4095663 A GB 4095663A GB 4095663 A GB4095663 A GB 4095663A GB 1057127 A GB1057127 A GB 1057127A
Authority
GB
Grant status
Application
Patent type
Prior art keywords
beam
slab
scribing
electron
accordance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4095663A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
United Technologies Corp
Original Assignee
United Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/10Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00Electron-beam welding or cutting
    • B23K15/08Removing material, e.g. by cutting, by hole drilling
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3005Observing the objects or the point of impact on the object
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/2633Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00Severing by tearing or breaking
    • Y10T225/10Methods
    • Y10T225/12With preliminary weakening

Abstract

1,057,127. Removing metal by laser or electron beams. UNITED AIRCRAFT CORPORATION. Oct. 17, 1963 [Oct. 31, 1962], No. 40956/63. Heading B3V. [Also in Divisions B5 and H1] A slab of material which when scribed or indented, fractures under load in a brittle fashion is subdivided by scribing with a high energy beam, e.g. a laser or electron beam and then fracturing in accordance with the pattern of scribing. The material may be a semiconductor containing a multiplicity of devices, e.g. of silicon, germanium, gallium arsenide, indium antimonide, aluminium phosphide or silicon carbide, a metal such as tungsten or molybdenum, or ceramics such as alumina, beryllia, and cermets. In the embodiment the scribing is effected in vacuo by an electron beam in the apparatus shown in Fig. 1. This comprises a direct heated cathode 20, an apertured grounded anode 22, focusing coils 28, 30 and a magnetic lens 32. A pattern of intersecting lines is scribed by scanning using deflector coils 34 controlled by an operator with the aid of the perta-mirror assembly shown. Alternatively deflection and pulsing of the beam are automatically controlled in accordance with a programme. The slab is subsequently broken up by ultrasonic vibration in a tank containing water or acetone, or by passing it between rubber balls to distort it. If desired electrodes may be welded to the semi-conductor slab by the beam before subdivision.
GB4095663A 1962-10-31 1963-10-17 Improvements in or relating to the fabrication of micro-plates, particularly micro-seiconductor devices Expired GB1057127A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US3112850A US3112850A (en) 1962-10-31 1962-10-31 Dicing of micro-semiconductors

Publications (1)

Publication Number Publication Date
GB1057127A true true GB1057127A (en) 1967-02-01

Family

ID=22881112

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4095663A Expired GB1057127A (en) 1962-10-31 1963-10-17 Improvements in or relating to the fabrication of micro-plates, particularly micro-seiconductor devices

Country Status (2)

Country Link
US (1) US3112850A (en)
GB (1) GB1057127A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401876A (en) 1980-05-20 1983-08-30 Martin Cooper Working gemstones
US5932119A (en) * 1996-01-05 1999-08-03 Lazare Kaplan International, Inc. Laser marking system

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552675A (en) * 1959-04-08 1996-09-03 Lemelson; Jerome H. High temperature reaction apparatus
US3226527A (en) * 1963-10-23 1965-12-28 William H Harding Apparatus for perforating sheet material
US3207198A (en) * 1963-10-25 1965-09-21 Jr Clement T Beeson Method and apparatus for breaking and separating eggs
GB1130434A (en) * 1965-03-30 1968-10-16 Steigerwald Strahltech Method for the machining e.g. welding and cutting of materials by means of beamed radiant energy
US3384279A (en) * 1966-08-23 1968-05-21 Western Electric Co Methods of severing brittle material along prescribed lines
US3469076A (en) * 1967-06-01 1969-09-23 Producto Machine Co The Apparatus for removing flashing from molded plastic articles
US3629545A (en) * 1967-12-19 1971-12-21 Western Electric Co Laser substrate parting
US3701880A (en) * 1968-11-29 1972-10-31 Westinghouse Electric Corp Method for sculpturing an indicia or decorative design in the surface of an article with a beam of corpuscular energy
GB1309802A (en) * 1969-06-03 1973-03-14 Velcro Sa Soulie Method of and apparatus for cutting loops carried by a support member for producing hooks therefrom
US3696742A (en) * 1969-10-06 1972-10-10 Monsanto Res Corp Method of making a stencil for screen-printing using a laser beam
US3610871A (en) * 1970-02-19 1971-10-05 Western Electric Co Initiation of a controlled fracture
US3695497A (en) * 1970-08-26 1972-10-03 Ppg Industries Inc Method of severing glass
US3824678A (en) * 1970-08-31 1974-07-23 North American Rockwell Process for laser scribing beam lead semiconductor wafers
US3818577A (en) * 1971-01-15 1974-06-25 Caterpillar Tractor Co Connecting rod manufacturing
US3952404A (en) * 1973-07-30 1976-04-27 Sharp Kabushiki Kaisha Beam lead formation method
US3863333A (en) * 1973-08-31 1975-02-04 Bell Telephone Labor Inc Methods for making semiconductor devices
US4019248A (en) * 1974-06-04 1977-04-26 Texas Instruments Incorporated High voltage junction semiconductor device fabrication
US3997964A (en) * 1974-09-30 1976-12-21 General Electric Company Premature breakage resistant semiconductor wafer and method for the manufacture thereof
US3970819A (en) * 1974-11-25 1976-07-20 International Business Machines Corporation Backside laser dicing system
US4174561A (en) * 1976-02-09 1979-11-20 Semicon, Inc. Method of fabricating high intensity solar energy converter
NL7609815A (en) * 1976-09-03 1978-03-07 Philips Nv A method of manufacturing a semiconductor device, and semiconductor device manufactured by means of the method.
US4203127A (en) * 1977-07-18 1980-05-13 Motorola, Inc. Package and method of packaging semiconductor wafers
US4473424A (en) * 1981-06-17 1984-09-25 Sorko Ram Paul O Decorative mirrored article
US4694568A (en) * 1982-01-07 1987-09-22 North American Philips Corporation Method of manufacturing chip resistors with edge around terminations
US4661718A (en) * 1984-06-07 1987-04-28 Nippondenso Co., Ltd. Information and electrical power transmission system and method for vehicle
RU2024441C1 (en) * 1992-04-02 1994-12-15 Владимир Степанович Кондратенко Process of cutting of nonmetal materials
EP0613765B1 (en) * 1993-03-02 1999-12-15 CeramTec AG Innovative Ceramic Engineering Method for the manufacture of subdividable tiles from a brittle material
WO1997029509A1 (en) * 1996-02-09 1997-08-14 Philips Electronics N.V. Laser separation of semiconductor elements formed in a wafer of semiconductor material
JPH10305420A (en) * 1997-03-04 1998-11-17 Ngk Insulators Ltd Method for fabricating matrix made up of oxide single crystal and method for manufacturing functional device
US6268641B1 (en) 1998-03-30 2001-07-31 Kabushiki Kaisha Toshiba Semiconductor wafer having identification indication and method of manufacturing the same
CN1413136A (en) 1999-11-24 2003-04-23 应用光子学公司 Method and apparatus for separating non-metallic materials
US6919531B2 (en) * 2002-03-25 2005-07-19 Agilent Technologies, Inc. Methods for producing glass substrates for use in biopolymeric microarrays
JP2005019667A (en) * 2003-06-26 2005-01-20 Disco Abrasive Syst Ltd Method for dividing semiconductor wafer by utilizing laser beam
JP4601403B2 (en) * 2004-11-25 2010-12-22 パナソニック株式会社 Manufacturing method and apparatus for manufacturing a semiconductor laser device
US20140339280A1 (en) * 2013-05-20 2014-11-20 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method and Device for Scribing and Breaking Glass Substrate
JP2017055012A (en) * 2015-09-11 2017-03-16 株式会社東芝 Manufacturing method for device

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2337569A (en) * 1939-05-20 1943-12-28 Pietschack Ernst Method of producing mosaic electrodes
DE896827C (en) * 1951-09-08 1953-11-16 Licentia Gmbh A method for shaping processing of crystalline Halbleiterkoerpern
US2970730A (en) * 1957-01-08 1961-02-07 Motorola Inc Dicing semiconductor wafers
NL245195A (en) * 1958-12-11

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401876A (en) 1980-05-20 1983-08-30 Martin Cooper Working gemstones
US5932119A (en) * 1996-01-05 1999-08-03 Lazare Kaplan International, Inc. Laser marking system
US6211484B1 (en) 1996-01-05 2001-04-03 Lazare Kaplan International, Inc. Laser making system and certificate for a gemstone
US6476351B1 (en) 1996-01-05 2002-11-05 Lazare Kaplan International, Inc. Laser marking system
EP2216126A2 (en) 1996-01-05 2010-08-11 Lazare Kaplan International Inc. Laser marking system for gemstones and method of authenticating marking

Also Published As

Publication number Publication date Type
US3112850A (en) 1963-12-03 grant
NL299821A (en) application

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