GB1057127A - Improvements in or relating to the fabrication of micro-plates, particularly micro-seiconductor devices - Google Patents

Improvements in or relating to the fabrication of micro-plates, particularly micro-seiconductor devices

Info

Publication number
GB1057127A
GB1057127A GB4095663A GB4095663A GB1057127A GB 1057127 A GB1057127 A GB 1057127A GB 4095663 A GB4095663 A GB 4095663A GB 4095663 A GB4095663 A GB 4095663A GB 1057127 A GB1057127 A GB 1057127A
Authority
GB
United Kingdom
Prior art keywords
scribing
slab
micro
scribed
oct
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4095663A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Technologies Corp
Original Assignee
United Aircraft Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Aircraft Corp filed Critical United Aircraft Corp
Publication of GB1057127A publication Critical patent/GB1057127A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00—Electron-beam welding or cutting
    • B23K15/08—Removing material, e.g. by cutting, by hole drilling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3005—Observing the objects or the point of impact on the object
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00—Severing by tearing or breaking
    • Y10T225/10—Methods
    • Y10T225/12—With preliminary weakening

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Analytical Chemistry (AREA)
  • Mining & Mineral Resources (AREA)
  • General Health & Medical Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

1,057,127. Removing metal by laser or electron beams. UNITED AIRCRAFT CORPORATION. Oct. 17, 1963 [Oct. 31, 1962], No. 40956/63. Heading B3V. [Also in Divisions B5 and H1] A slab of material which when scribed or indented, fractures under load in a brittle fashion is subdivided by scribing with a high energy beam, e.g. a laser or electron beam and then fracturing in accordance with the pattern of scribing. The material may be a semiconductor containing a multiplicity of devices, e.g. of silicon, germanium, gallium arsenide, indium antimonide, aluminium phosphide or silicon carbide, a metal such as tungsten or molybdenum, or ceramics such as alumina, beryllia, and cermets. In the embodiment the scribing is effected in vacuo by an electron beam in the apparatus shown in Fig. 1. This comprises a direct heated cathode 20, an apertured grounded anode 22, focusing coils 28, 30 and a magnetic lens 32. A pattern of intersecting lines is scribed by scanning using deflector coils 34 controlled by an operator with the aid of the perta-mirror assembly shown. Alternatively deflection and pulsing of the beam are automatically controlled in accordance with a programme. The slab is subsequently broken up by ultrasonic vibration in a tank containing water or acetone, or by passing it between rubber balls to distort it. If desired electrodes may be welded to the semi-conductor slab by the beam before subdivision.
GB4095663A 1962-10-31 1963-10-17 Improvements in or relating to the fabrication of micro-plates, particularly micro-seiconductor devices Expired GB1057127A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23437362 US3112850A (en) 1962-10-31 1962-10-31 Dicing of micro-semiconductors

Publications (1)

Publication Number Publication Date
GB1057127A true GB1057127A (en) 1967-02-01

Family

ID=22881112

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4095663A Expired GB1057127A (en) 1962-10-31 1963-10-17 Improvements in or relating to the fabrication of micro-plates, particularly micro-seiconductor devices

Country Status (3)

Country Link
US (1) US3112850A (en)
GB (1) GB1057127A (en)
NL (1) NL299821A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401876A (en) 1980-05-20 1983-08-30 Martin Cooper Working gemstones
US5932119A (en) * 1996-01-05 1999-08-03 Lazare Kaplan International, Inc. Laser marking system

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5552675A (en) * 1959-04-08 1996-09-03 Lemelson; Jerome H. High temperature reaction apparatus
US3226527A (en) * 1963-10-23 1965-12-28 William H Harding Apparatus for perforating sheet material
US3207198A (en) * 1963-10-25 1965-09-21 Jr Clement T Beeson Method and apparatus for breaking and separating eggs
CH451355A (en) * 1965-03-30 1968-05-15 Steigerwald Gmbh K H Process for material processing with radiant energy
US3384279A (en) * 1966-08-23 1968-05-21 Western Electric Co Methods of severing brittle material along prescribed lines
US3469076A (en) * 1967-06-01 1969-09-23 Producto Machine Co The Apparatus for removing flashing from molded plastic articles
US3629545A (en) * 1967-12-19 1971-12-21 Western Electric Co Laser substrate parting
US3701880A (en) * 1968-11-29 1972-10-31 Westinghouse Electric Corp Method for sculpturing an indicia or decorative design in the surface of an article with a beam of corpuscular energy
CH528238A (en) * 1969-06-03 1972-09-30 Velcro Sa Soulie Process for cutting loops made of synthetic material placed on a support to make hooks
US3696742A (en) * 1969-10-06 1972-10-10 Monsanto Res Corp Method of making a stencil for screen-printing using a laser beam
US3610871A (en) * 1970-02-19 1971-10-05 Western Electric Co Initiation of a controlled fracture
US3695497A (en) * 1970-08-26 1972-10-03 Ppg Industries Inc Method of severing glass
US3824678A (en) * 1970-08-31 1974-07-23 North American Rockwell Process for laser scribing beam lead semiconductor wafers
US3818577A (en) * 1971-01-15 1974-06-25 Caterpillar Tractor Co Connecting rod manufacturing
US3952404A (en) * 1973-07-30 1976-04-27 Sharp Kabushiki Kaisha Beam lead formation method
US3863333A (en) * 1973-08-31 1975-02-04 Bell Telephone Labor Inc Methods for making semiconductor devices
US4019248A (en) * 1974-06-04 1977-04-26 Texas Instruments Incorporated High voltage junction semiconductor device fabrication
US3997964A (en) * 1974-09-30 1976-12-21 General Electric Company Premature breakage resistant semiconductor wafer and method for the manufacture thereof
US3970819A (en) * 1974-11-25 1976-07-20 International Business Machines Corporation Backside laser dicing system
US4174561A (en) * 1976-02-09 1979-11-20 Semicon, Inc. Method of fabricating high intensity solar energy converter
NL7609815A (en) * 1976-09-03 1978-03-07 Philips Nv PROCESS FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE AND SEMI-CONDUCTOR DEVICE MANUFACTURED BY THE PROCESS.
US4203127A (en) * 1977-07-18 1980-05-13 Motorola, Inc. Package and method of packaging semiconductor wafers
US4473424A (en) * 1981-06-17 1984-09-25 Sorko Ram Paul O Decorative mirrored article
US4694568A (en) * 1982-01-07 1987-09-22 North American Philips Corporation Method of manufacturing chip resistors with edge around terminations
US4661718A (en) * 1984-06-07 1987-04-28 Nippondenso Co., Ltd. Information and electrical power transmission system and method for vehicle
RU2024441C1 (en) * 1992-04-02 1994-12-15 Владимир Степанович Кондратенко Process of cutting of nonmetal materials
EP0613765B1 (en) * 1993-03-02 1999-12-15 CeramTec AG Innovative Ceramic Engineering Method for the manufacture of subdividable tiles from a brittle material
JPH11503880A (en) * 1996-02-09 1999-03-30 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ Laser splitting method for semiconductor device formed on semiconductor material wafer
JPH10305420A (en) 1997-03-04 1998-11-17 Ngk Insulators Ltd Method for fabricating matrix made up of oxide single crystal and method for manufacturing functional device
US6268641B1 (en) 1998-03-30 2001-07-31 Kabushiki Kaisha Toshiba Semiconductor wafer having identification indication and method of manufacturing the same
US6489588B1 (en) 1999-11-24 2002-12-03 Applied Photonics, Inc. Method and apparatus for separating non-metallic materials
US6919531B2 (en) * 2002-03-25 2005-07-19 Agilent Technologies, Inc. Methods for producing glass substrates for use in biopolymeric microarrays
JP2005019667A (en) * 2003-06-26 2005-01-20 Disco Abrasive Syst Ltd Method for dividing semiconductor wafer by utilizing laser beam
JP4601403B2 (en) * 2004-11-25 2010-12-22 パナソニック株式会社 Semiconductor laser device manufacturing method and manufacturing apparatus therefor
US20140339280A1 (en) * 2013-05-20 2014-11-20 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method and Device for Scribing and Breaking Glass Substrate
JP6391471B2 (en) 2015-01-06 2018-09-19 株式会社ディスコ Wafer generation method
JP2017055012A (en) * 2015-09-11 2017-03-16 株式会社東芝 Manufacturing method for device
JP6858587B2 (en) * 2017-02-16 2021-04-14 株式会社ディスコ Wafer generation method
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
CN114347281A (en) * 2022-01-18 2022-04-15 锦州神工半导体股份有限公司 Monocrystalline silicon wafer cutting method

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US2337569A (en) * 1939-05-20 1943-12-28 Pietschack Ernst Method of producing mosaic electrodes
DE891113C (en) * 1951-09-08 1953-09-24 Licentia Gmbh Process for the production of electrically asymmetrically conductive systems
US2970730A (en) * 1957-01-08 1961-02-07 Motorola Inc Dicing semiconductor wafers
NL245195A (en) * 1958-12-11

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4401876A (en) 1980-05-20 1983-08-30 Martin Cooper Working gemstones
US5932119A (en) * 1996-01-05 1999-08-03 Lazare Kaplan International, Inc. Laser marking system
US6211484B1 (en) 1996-01-05 2001-04-03 Lazare Kaplan International, Inc. Laser making system and certificate for a gemstone
US6476351B1 (en) 1996-01-05 2002-11-05 Lazare Kaplan International, Inc. Laser marking system
EP2216126A2 (en) 1996-01-05 2010-08-11 Lazare Kaplan International Inc. Laser marking system for gemstones and method of authenticating marking

Also Published As

Publication number Publication date
US3112850A (en) 1963-12-03
NL299821A (en) 1900-01-01

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