NL299821A - - Google Patents
Info
- Publication number
- NL299821A NL299821A NL299821DA NL299821A NL 299821 A NL299821 A NL 299821A NL 299821D A NL299821D A NL 299821DA NL 299821 A NL299821 A NL 299821A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K15/00—Electron-beam welding or cutting
- B23K15/08—Removing material, e.g. by cutting, by hole drilling
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/22—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
- B28D1/221—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
- H01J37/3005—Observing the objects or the point of impact on the object
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/2633—Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/10—Methods
- Y10T225/12—With preliminary weakening
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US23437362 US3112850A (en) | 1962-10-31 | 1962-10-31 | Dicing of micro-semiconductors |
Publications (1)
Publication Number | Publication Date |
---|---|
NL299821A true NL299821A (en) | 1900-01-01 |
Family
ID=22881112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL299821D NL299821A (en) | 1962-10-31 |
Country Status (3)
Country | Link |
---|---|
US (1) | US3112850A (en) |
GB (1) | GB1057127A (en) |
NL (1) | NL299821A (en) |
Families Citing this family (45)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5552675A (en) * | 1959-04-08 | 1996-09-03 | Lemelson; Jerome H. | High temperature reaction apparatus |
US3226527A (en) * | 1963-10-23 | 1965-12-28 | William H Harding | Apparatus for perforating sheet material |
US3207198A (en) * | 1963-10-25 | 1965-09-21 | Jr Clement T Beeson | Method and apparatus for breaking and separating eggs |
CH451355A (en) * | 1965-03-30 | 1968-05-15 | Steigerwald Gmbh K H | Process for material processing with radiant energy |
US3384279A (en) * | 1966-08-23 | 1968-05-21 | Western Electric Co | Methods of severing brittle material along prescribed lines |
US3469076A (en) * | 1967-06-01 | 1969-09-23 | Producto Machine Co The | Apparatus for removing flashing from molded plastic articles |
US3629545A (en) * | 1967-12-19 | 1971-12-21 | Western Electric Co | Laser substrate parting |
US3701880A (en) * | 1968-11-29 | 1972-10-31 | Westinghouse Electric Corp | Method for sculpturing an indicia or decorative design in the surface of an article with a beam of corpuscular energy |
CH528238A (en) * | 1969-06-03 | 1972-09-30 | Velcro Sa Soulie | Process for cutting loops made of synthetic material placed on a support to make hooks |
US3696742A (en) * | 1969-10-06 | 1972-10-10 | Monsanto Res Corp | Method of making a stencil for screen-printing using a laser beam |
US3610871A (en) * | 1970-02-19 | 1971-10-05 | Western Electric Co | Initiation of a controlled fracture |
US3695497A (en) * | 1970-08-26 | 1972-10-03 | Ppg Industries Inc | Method of severing glass |
US3824678A (en) * | 1970-08-31 | 1974-07-23 | North American Rockwell | Process for laser scribing beam lead semiconductor wafers |
US3818577A (en) * | 1971-01-15 | 1974-06-25 | Caterpillar Tractor Co | Connecting rod manufacturing |
US3952404A (en) * | 1973-07-30 | 1976-04-27 | Sharp Kabushiki Kaisha | Beam lead formation method |
US3863333A (en) * | 1973-08-31 | 1975-02-04 | Bell Telephone Labor Inc | Methods for making semiconductor devices |
US4019248A (en) * | 1974-06-04 | 1977-04-26 | Texas Instruments Incorporated | High voltage junction semiconductor device fabrication |
US3997964A (en) * | 1974-09-30 | 1976-12-21 | General Electric Company | Premature breakage resistant semiconductor wafer and method for the manufacture thereof |
US3970819A (en) * | 1974-11-25 | 1976-07-20 | International Business Machines Corporation | Backside laser dicing system |
US4174561A (en) * | 1976-02-09 | 1979-11-20 | Semicon, Inc. | Method of fabricating high intensity solar energy converter |
NL7609815A (en) * | 1976-09-03 | 1978-03-07 | Philips Nv | PROCESS FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE AND SEMI-CONDUCTOR DEVICE MANUFACTURED BY THE PROCESS. |
US4203127A (en) * | 1977-07-18 | 1980-05-13 | Motorola, Inc. | Package and method of packaging semiconductor wafers |
US4401876A (en) | 1980-05-20 | 1983-08-30 | Martin Cooper | Working gemstones |
US4473424A (en) * | 1981-06-17 | 1984-09-25 | Sorko Ram Paul O | Decorative mirrored article |
US4694568A (en) * | 1982-01-07 | 1987-09-22 | North American Philips Corporation | Method of manufacturing chip resistors with edge around terminations |
US4661718A (en) * | 1984-06-07 | 1987-04-28 | Nippondenso Co., Ltd. | Information and electrical power transmission system and method for vehicle |
RU2024441C1 (en) * | 1992-04-02 | 1994-12-15 | Владимир Степанович Кондратенко | Process of cutting of nonmetal materials |
DE59408996D1 (en) * | 1993-03-02 | 2000-01-20 | Ceramtec Ag | Process for producing separable plates from brittle material with high accuracy |
US5932119A (en) * | 1996-01-05 | 1999-08-03 | Lazare Kaplan International, Inc. | Laser marking system |
JPH11503880A (en) * | 1996-02-09 | 1999-03-30 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | Laser splitting method for semiconductor device formed on semiconductor material wafer |
JPH10305420A (en) | 1997-03-04 | 1998-11-17 | Ngk Insulators Ltd | Method for fabricating matrix made up of oxide single crystal and method for manufacturing functional device |
US6268641B1 (en) | 1998-03-30 | 2001-07-31 | Kabushiki Kaisha Toshiba | Semiconductor wafer having identification indication and method of manufacturing the same |
ES2304987T3 (en) | 1999-11-24 | 2008-11-01 | Applied Photonics, Inc. | METHOD AND APPARATUS FOR SEPARATING NON-METALLIC MATERIALS. |
US6919531B2 (en) * | 2002-03-25 | 2005-07-19 | Agilent Technologies, Inc. | Methods for producing glass substrates for use in biopolymeric microarrays |
JP2005019667A (en) * | 2003-06-26 | 2005-01-20 | Disco Abrasive Syst Ltd | Method for dividing semiconductor wafer by utilizing laser beam |
JP4601403B2 (en) * | 2004-11-25 | 2010-12-22 | パナソニック株式会社 | Semiconductor laser device manufacturing method and manufacturing apparatus therefor |
US20140339280A1 (en) * | 2013-05-20 | 2014-11-20 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Method and Device for Scribing and Breaking Glass Substrate |
JP6391471B2 (en) | 2015-01-06 | 2018-09-19 | 株式会社ディスコ | Wafer generation method |
JP2017055012A (en) * | 2015-09-11 | 2017-03-16 | 株式会社東芝 | Manufacturing method for device |
JP6858587B2 (en) * | 2017-02-16 | 2021-04-14 | 株式会社ディスコ | Wafer generation method |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
CN114347281A (en) * | 2022-01-18 | 2022-04-15 | 锦州神工半导体股份有限公司 | Monocrystalline silicon wafer cutting method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2337569A (en) * | 1939-05-20 | 1943-12-28 | Pietschack Ernst | Method of producing mosaic electrodes |
DE896827C (en) * | 1951-09-08 | 1953-11-16 | Licentia Gmbh | Process for the shaping processing of crystalline semiconductor bodies |
US2970730A (en) * | 1957-01-08 | 1961-02-07 | Motorola Inc | Dicing semiconductor wafers |
NL245195A (en) * | 1958-12-11 |
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0
- NL NL299821D patent/NL299821A/xx unknown
-
1962
- 1962-10-31 US US23437362 patent/US3112850A/en not_active Expired - Lifetime
-
1963
- 1963-10-17 GB GB4095663A patent/GB1057127A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB1057127A (en) | 1967-02-01 |
US3112850A (en) | 1963-12-03 |