NL299821A - - Google Patents

Info

Publication number
NL299821A
NL299821A NL299821DA NL299821A NL 299821 A NL299821 A NL 299821A NL 299821D A NL299821D A NL 299821DA NL 299821 A NL299821 A NL 299821A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of NL299821A publication Critical patent/NL299821A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67092Apparatus for mechanical treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/10Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K15/00Electron-beam welding or cutting
    • B23K15/08Removing material, e.g. by cutting, by hole drilling
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/22Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising
    • B28D1/221Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by cutting, e.g. incising by thermic methods
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002Details
    • H01J37/3005Observing the objects or the point of impact on the object
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/2633Bombardment with radiation with high-energy radiation for etching, e.g. sputteretching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T225/00Severing by tearing or breaking
    • Y10T225/10Methods
    • Y10T225/12With preliminary weakening
NL299821D 1962-10-31 NL299821A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23437362 US3112850A (en) 1962-10-31 1962-10-31 Dicing of micro-semiconductors

Publications (1)

Publication Number Publication Date
NL299821A true NL299821A (en) 1900-01-01

Family

ID=22881112

Family Applications (1)

Application Number Title Priority Date Filing Date
NL299821D NL299821A (en) 1962-10-31

Country Status (3)

Country Link
US (1) US3112850A (en)
GB (1) GB1057127A (en)
NL (1) NL299821A (en)

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US5552675A (en) * 1959-04-08 1996-09-03 Lemelson; Jerome H. High temperature reaction apparatus
US3226527A (en) * 1963-10-23 1965-12-28 William H Harding Apparatus for perforating sheet material
US3207198A (en) * 1963-10-25 1965-09-21 Jr Clement T Beeson Method and apparatus for breaking and separating eggs
CH451355A (en) * 1965-03-30 1968-05-15 Steigerwald Gmbh K H Process for material processing with radiant energy
US3384279A (en) * 1966-08-23 1968-05-21 Western Electric Co Methods of severing brittle material along prescribed lines
US3469076A (en) * 1967-06-01 1969-09-23 Producto Machine Co The Apparatus for removing flashing from molded plastic articles
US3629545A (en) * 1967-12-19 1971-12-21 Western Electric Co Laser substrate parting
US3701880A (en) * 1968-11-29 1972-10-31 Westinghouse Electric Corp Method for sculpturing an indicia or decorative design in the surface of an article with a beam of corpuscular energy
CH528238A (en) * 1969-06-03 1972-09-30 Velcro Sa Soulie Process for cutting loops made of synthetic material placed on a support to make hooks
US3696742A (en) * 1969-10-06 1972-10-10 Monsanto Res Corp Method of making a stencil for screen-printing using a laser beam
US3610871A (en) * 1970-02-19 1971-10-05 Western Electric Co Initiation of a controlled fracture
US3695497A (en) * 1970-08-26 1972-10-03 Ppg Industries Inc Method of severing glass
US3824678A (en) * 1970-08-31 1974-07-23 North American Rockwell Process for laser scribing beam lead semiconductor wafers
US3818577A (en) * 1971-01-15 1974-06-25 Caterpillar Tractor Co Connecting rod manufacturing
US3952404A (en) * 1973-07-30 1976-04-27 Sharp Kabushiki Kaisha Beam lead formation method
US3863333A (en) * 1973-08-31 1975-02-04 Bell Telephone Labor Inc Methods for making semiconductor devices
US4019248A (en) * 1974-06-04 1977-04-26 Texas Instruments Incorporated High voltage junction semiconductor device fabrication
US3997964A (en) * 1974-09-30 1976-12-21 General Electric Company Premature breakage resistant semiconductor wafer and method for the manufacture thereof
US3970819A (en) * 1974-11-25 1976-07-20 International Business Machines Corporation Backside laser dicing system
US4174561A (en) * 1976-02-09 1979-11-20 Semicon, Inc. Method of fabricating high intensity solar energy converter
NL7609815A (en) * 1976-09-03 1978-03-07 Philips Nv PROCESS FOR MANUFACTURING A SEMI-CONDUCTOR DEVICE AND SEMI-CONDUCTOR DEVICE MANUFACTURED BY THE PROCESS.
US4203127A (en) * 1977-07-18 1980-05-13 Motorola, Inc. Package and method of packaging semiconductor wafers
US4401876A (en) 1980-05-20 1983-08-30 Martin Cooper Working gemstones
US4473424A (en) * 1981-06-17 1984-09-25 Sorko Ram Paul O Decorative mirrored article
US4694568A (en) * 1982-01-07 1987-09-22 North American Philips Corporation Method of manufacturing chip resistors with edge around terminations
US4661718A (en) * 1984-06-07 1987-04-28 Nippondenso Co., Ltd. Information and electrical power transmission system and method for vehicle
RU2024441C1 (en) * 1992-04-02 1994-12-15 Владимир Степанович Кондратенко Process of cutting of nonmetal materials
DE59408996D1 (en) * 1993-03-02 2000-01-20 Ceramtec Ag Process for producing separable plates from brittle material with high accuracy
US5932119A (en) * 1996-01-05 1999-08-03 Lazare Kaplan International, Inc. Laser marking system
JPH11503880A (en) * 1996-02-09 1999-03-30 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ Laser splitting method for semiconductor device formed on semiconductor material wafer
JPH10305420A (en) 1997-03-04 1998-11-17 Ngk Insulators Ltd Method for fabricating matrix made up of oxide single crystal and method for manufacturing functional device
US6268641B1 (en) 1998-03-30 2001-07-31 Kabushiki Kaisha Toshiba Semiconductor wafer having identification indication and method of manufacturing the same
ES2304987T3 (en) 1999-11-24 2008-11-01 Applied Photonics, Inc. METHOD AND APPARATUS FOR SEPARATING NON-METALLIC MATERIALS.
US6919531B2 (en) * 2002-03-25 2005-07-19 Agilent Technologies, Inc. Methods for producing glass substrates for use in biopolymeric microarrays
JP2005019667A (en) * 2003-06-26 2005-01-20 Disco Abrasive Syst Ltd Method for dividing semiconductor wafer by utilizing laser beam
JP4601403B2 (en) * 2004-11-25 2010-12-22 パナソニック株式会社 Semiconductor laser device manufacturing method and manufacturing apparatus therefor
US20140339280A1 (en) * 2013-05-20 2014-11-20 Shenzhen China Star Optoelectronics Technology Co., Ltd. Method and Device for Scribing and Breaking Glass Substrate
JP6391471B2 (en) 2015-01-06 2018-09-19 株式会社ディスコ Wafer generation method
JP2017055012A (en) * 2015-09-11 2017-03-16 株式会社東芝 Manufacturing method for device
JP6858587B2 (en) * 2017-02-16 2021-04-14 株式会社ディスコ Wafer generation method
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
CN114347281A (en) * 2022-01-18 2022-04-15 锦州神工半导体股份有限公司 Monocrystalline silicon wafer cutting method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2337569A (en) * 1939-05-20 1943-12-28 Pietschack Ernst Method of producing mosaic electrodes
DE896827C (en) * 1951-09-08 1953-11-16 Licentia Gmbh Process for the shaping processing of crystalline semiconductor bodies
US2970730A (en) * 1957-01-08 1961-02-07 Motorola Inc Dicing semiconductor wafers
NL245195A (en) * 1958-12-11

Also Published As

Publication number Publication date
GB1057127A (en) 1967-02-01
US3112850A (en) 1963-12-03

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