KR20200019269A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20200019269A
KR20200019269A KR1020207004429A KR20207004429A KR20200019269A KR 20200019269 A KR20200019269 A KR 20200019269A KR 1020207004429 A KR1020207004429 A KR 1020207004429A KR 20207004429 A KR20207004429 A KR 20207004429A KR 20200019269 A KR20200019269 A KR 20200019269A
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KR
South Korea
Prior art keywords
film
insulating film
oxide semiconductor
transistor
semiconductor film
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Ceased
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KR1020207004429A
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English (en)
Korean (ko)
Inventor
토시나리 사사키
타카시 하모치
토시유키 미야모토
마사후미 노무라
준이치 코에주카
켄이치 오카자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Priority to KR1020207033940A priority Critical patent/KR102315695B1/ko
Publication of KR20200019269A publication Critical patent/KR20200019269A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H01L29/7869—
    • H01L29/247—
    • H01L29/78606—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/875—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being semiconductor metal oxide, e.g. InGaZnO

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020207004429A 2012-06-29 2013-06-18 반도체 장치 Ceased KR20200019269A (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020207033940A KR102315695B1 (ko) 2012-06-29 2013-06-18 반도체 장치

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2012-147703 2012-06-29
JP2012147703 2012-06-29
PCT/JP2013/067165 WO2014002920A1 (en) 2012-06-29 2013-06-18 Semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020157000416A Division KR102080696B1 (ko) 2012-06-29 2013-06-18 반도체 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020207033940A Division KR102315695B1 (ko) 2012-06-29 2013-06-18 반도체 장치

Publications (1)

Publication Number Publication Date
KR20200019269A true KR20200019269A (ko) 2020-02-21

Family

ID=49777166

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020207004429A Ceased KR20200019269A (ko) 2012-06-29 2013-06-18 반도체 장치
KR1020157000416A Expired - Fee Related KR102080696B1 (ko) 2012-06-29 2013-06-18 반도체 장치
KR1020207033940A Active KR102315695B1 (ko) 2012-06-29 2013-06-18 반도체 장치

Family Applications After (2)

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KR1020157000416A Expired - Fee Related KR102080696B1 (ko) 2012-06-29 2013-06-18 반도체 장치
KR1020207033940A Active KR102315695B1 (ko) 2012-06-29 2013-06-18 반도체 장치

Country Status (7)

Country Link
US (2) US10134852B2 (https=)
JP (4) JP6193641B2 (https=)
KR (3) KR20200019269A (https=)
CN (2) CN104380444A (https=)
DE (1) DE112013003041T5 (https=)
TW (2) TWI711183B (https=)
WO (1) WO2014002920A1 (https=)

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TWI657488B (zh) * 2014-03-20 2019-04-21 日商半導體能源研究所股份有限公司 半導體裝置、具有該半導體裝置的顯示裝置、具有該顯示裝置的顯示模組以及具有該半導體裝置、該顯示裝置和該顯示模組的電子裝置
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WO2016098651A1 (ja) 2014-12-16 2016-06-23 シャープ株式会社 半導体装置、その製造方法、および半導体装置を備えた表示装置
WO2017064590A1 (en) 2015-10-12 2017-04-20 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10256132B2 (en) * 2016-04-28 2019-04-09 Varian Semiconductor Equipment Associates, Inc. Reticle processing system
KR102914910B1 (ko) 2018-10-26 2026-01-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 금속 산화물의 제작 방법, 반도체 장치의 제작 방법
CN110223600B (zh) * 2019-05-14 2020-11-10 深圳市华星光电技术有限公司 覆晶薄膜的绑定结构
CN119158250A (zh) 2019-05-20 2024-12-20 天使集团股份有限公司 游戏币的管理系统
CN110767745A (zh) * 2019-09-18 2020-02-07 华南理工大学 复合金属氧化物半导体及薄膜晶体管与应用
CN110797395A (zh) * 2019-09-18 2020-02-14 华南理工大学 掺杂型金属氧化物半导体及薄膜晶体管与应用
CN110911581B (zh) 2019-11-14 2021-05-07 深圳市华星光电半导体显示技术有限公司 一种显示面板及其制作方法及电子设备
JP7640838B2 (ja) * 2021-03-23 2025-03-06 日新電機株式会社 シリコン酸窒化膜の成膜方法及び薄膜トランジスタの製造方法
US20250386681A1 (en) * 2024-06-17 2025-12-18 Samsung Display Co., Ltd. Transistor, display device and electronic device having the transistor, and manufacturing method thereof

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