KR20180001562A - 반도체 장치를 제작하기 위한 방법 - Google Patents

반도체 장치를 제작하기 위한 방법 Download PDF

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Publication number
KR20180001562A
KR20180001562A KR1020177036496A KR20177036496A KR20180001562A KR 20180001562 A KR20180001562 A KR 20180001562A KR 1020177036496 A KR1020177036496 A KR 1020177036496A KR 20177036496 A KR20177036496 A KR 20177036496A KR 20180001562 A KR20180001562 A KR 20180001562A
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Prior art keywords
oxide semiconductor
semiconductor layer
insulating layer
transistor
layer
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KR1020177036496A
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Korean (ko)
Inventor
순페이 야마자키
히로키 오하라
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20180001562A publication Critical patent/KR20180001562A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/42—Bombardment with radiation
    • H01L21/423—Bombardment with radiation with high-energy radiation
    • H01L21/425—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L27/1225—
    • H01L29/66742—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Electroluminescent Light Sources (AREA)
KR1020177036496A 2010-02-26 2011-02-09 반도체 장치를 제작하기 위한 방법 Ceased KR20180001562A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2010-043555 2010-02-26
JP2010043555 2010-02-26
PCT/JP2011/053311 WO2011105268A1 (en) 2010-02-26 2011-02-09 Method for manufacturing semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127025102A Division KR20130025871A (ko) 2010-02-26 2011-02-09 반도체 장치를 제작하기 위한 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187036818A Division KR20190000365A (ko) 2010-02-26 2011-02-09 반도체 장치를 제작하기 위한 방법

Publications (1)

Publication Number Publication Date
KR20180001562A true KR20180001562A (ko) 2018-01-04

Family

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KR1020177036496A Ceased KR20180001562A (ko) 2010-02-26 2011-02-09 반도체 장치를 제작하기 위한 방법
KR1020187036818A Ceased KR20190000365A (ko) 2010-02-26 2011-02-09 반도체 장치를 제작하기 위한 방법
KR1020127025102A Ceased KR20130025871A (ko) 2010-02-26 2011-02-09 반도체 장치를 제작하기 위한 방법

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KR1020187036818A Ceased KR20190000365A (ko) 2010-02-26 2011-02-09 반도체 장치를 제작하기 위한 방법
KR1020127025102A Ceased KR20130025871A (ko) 2010-02-26 2011-02-09 반도체 장치를 제작하기 위한 방법

Country Status (6)

Country Link
US (2) US8518755B2 (enrdf_load_stackoverflow)
JP (3) JP5727818B2 (enrdf_load_stackoverflow)
KR (3) KR20180001562A (enrdf_load_stackoverflow)
CN (1) CN102782859B (enrdf_load_stackoverflow)
TW (1) TWI529812B (enrdf_load_stackoverflow)
WO (1) WO2011105268A1 (enrdf_load_stackoverflow)

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JP5111867B2 (ja) * 2007-01-16 2013-01-09 株式会社ジャパンディスプレイイースト 表示装置
KR101481399B1 (ko) 2009-12-18 2015-01-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI541904B (zh) * 2011-03-11 2016-07-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
CN105931967B (zh) * 2011-04-27 2019-05-03 株式会社半导体能源研究所 半导体装置的制造方法
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JP5912394B2 (ja) 2011-10-13 2016-04-27 株式会社半導体エネルギー研究所 半導体装置
SG10201601757UA (en) * 2011-10-14 2016-04-28 Semiconductor Energy Lab Semiconductor device
JP6082562B2 (ja) * 2011-10-27 2017-02-15 株式会社半導体エネルギー研究所 半導体装置
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KR102100425B1 (ko) * 2011-12-27 2020-04-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
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KR102220279B1 (ko) 2012-10-19 2021-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체막을 포함하는 다층막 및 반도체 장치의 제작 방법
KR102279459B1 (ko) 2012-10-24 2021-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR102238682B1 (ko) 2013-02-28 2021-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치와 그 제작 방법
KR102153110B1 (ko) 2013-03-06 2020-09-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체막 및 반도체 장치
KR102294507B1 (ko) * 2013-09-06 2021-08-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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CN104538364B (zh) * 2014-12-25 2018-01-26 上海华虹宏力半导体制造有限公司 稳定闪存单元字线阈值电压的方法
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CN105405768A (zh) * 2015-12-14 2016-03-16 华南理工大学 一种薄膜晶体管及其制备方法
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CN107403724A (zh) * 2016-05-20 2017-11-28 稳懋半导体股份有限公司 化合物半导体集成电路的抗湿气结构
CN105957872A (zh) * 2016-07-18 2016-09-21 京东方科技集团股份有限公司 阵列基板的制作方法、阵列基板及显示装置
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JP6844845B2 (ja) 2017-05-31 2021-03-17 三国電子有限会社 表示装置
CN107579077B (zh) * 2017-08-11 2020-01-07 上海天马有机发光显示技术有限公司 一种显示面板、其制作方法及显示装置
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