KR20120137238A - 반도체 장치 및 반도체 장치의 제조 방법 - Google Patents

반도체 장치 및 반도체 장치의 제조 방법 Download PDF

Info

Publication number
KR20120137238A
KR20120137238A KR1020120058005A KR20120058005A KR20120137238A KR 20120137238 A KR20120137238 A KR 20120137238A KR 1020120058005 A KR1020120058005 A KR 1020120058005A KR 20120058005 A KR20120058005 A KR 20120058005A KR 20120137238 A KR20120137238 A KR 20120137238A
Authority
KR
South Korea
Prior art keywords
semiconductor device
alignment mark
alignment
semiconductor
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020120058005A
Other languages
English (en)
Korean (ko)
Inventor
사토루 와키야마
마사키 미나미
Original Assignee
소니 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 주식회사 filed Critical 소니 주식회사
Publication of KR20120137238A publication Critical patent/KR20120137238A/ko
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0614—Marking devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/016—Manufacture or treatment using moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/101—Marks applied to devices, e.g. for alignment or identification characterised by the type of information, e.g. logos or symbols
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/601—Marks applied to devices, e.g. for alignment or identification for use after dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01233—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H10W72/01235—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01257—Changing the shapes of bumps by reflowing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01271—Cleaning, e.g. oxide removal or de-smearing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H10W72/01333—Manufacture or treatment of die-attach connectors using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H10W72/01336—Manufacture or treatment of die-attach connectors using blanket deposition in solid form, e.g. by using a powder or by laminating a foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/019—Manufacture or treatment of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07221—Aligning
    • H10W72/07223—Active alignment, e.g. using optical alignment using marks or sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07221—Aligning
    • H10W72/07227—Aligning involving guiding structures, e.g. spacers or supporting members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07234—Using a reflow oven
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07337—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy
    • H10W72/07338—Connecting techniques using a polymer adhesive, e.g. an adhesive based on silicone or epoxy hardening the adhesive by curing, e.g. thermosetting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/222—Multilayered bumps, e.g. a coating on top and side surfaces of a bump core
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/242—Dispositions, e.g. layouts relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/247—Dispositions of multiple bumps
    • H10W72/248—Top-view layouts, e.g. mirror arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/281—Auxiliary members
    • H10W72/285—Alignment aids, e.g. alignment marks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/312—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of electrically conductive pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/301—Bonding techniques, e.g. hybrid bonding
    • H10W80/327—Bonding techniques, e.g. hybrid bonding characterised by the direct bonding of insulating parts, e.g. of silicon oxide layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W80/00—Direct bonding of chips, wafers or substrates
    • H10W80/701—Direct bonding of chips, wafers or substrates characterised by the pads after the direct bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/26—Configurations of stacked chips the stacked chips being of the same size without any chips being laterally offset, e.g. chip stacks having a rectangular shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/792—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between multiple chips

Landscapes

  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
KR1020120058005A 2011-06-09 2012-05-31 반도체 장치 및 반도체 장치의 제조 방법 Ceased KR20120137238A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2011-129192 2011-06-09
JP2011129192A JP2012256737A (ja) 2011-06-09 2011-06-09 半導体装置及び半導体装置の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020190054795A Division KR102071823B1 (ko) 2011-06-09 2019-05-10 반도체 장치 및 반도체 장치의 제조 방법

Publications (1)

Publication Number Publication Date
KR20120137238A true KR20120137238A (ko) 2012-12-20

Family

ID=47292471

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020120058005A Ceased KR20120137238A (ko) 2011-06-09 2012-05-31 반도체 장치 및 반도체 장치의 제조 방법
KR1020190054795A Expired - Fee Related KR102071823B1 (ko) 2011-06-09 2019-05-10 반도체 장치 및 반도체 장치의 제조 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020190054795A Expired - Fee Related KR102071823B1 (ko) 2011-06-09 2019-05-10 반도체 장치 및 반도체 장치의 제조 방법

Country Status (5)

Country Link
US (1) US9548290B2 (https=)
JP (1) JP2012256737A (https=)
KR (2) KR20120137238A (https=)
CN (1) CN102820284B (https=)
TW (1) TWI497678B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150049166A (ko) * 2013-10-29 2015-05-08 삼성전자주식회사 반도체 패키지
KR20220036093A (ko) * 2020-09-15 2022-03-22 에스케이하이닉스 주식회사 이미지 센싱 장치

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9978656B2 (en) * 2011-11-22 2018-05-22 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming fine-pitch copper bump structures
US20130199831A1 (en) * 2012-02-06 2013-08-08 Christopher Morris Electromagnetic field assisted self-assembly with formation of electrical contacts
US9343419B2 (en) * 2012-12-14 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Bump structures for semiconductor package
CN110071089A (zh) * 2012-12-14 2019-07-30 台湾积体电路制造股份有限公司 用于半导体封装件的凸块结构及其制造方法
US9773724B2 (en) * 2013-01-29 2017-09-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices, methods of manufacture thereof, and semiconductor device packages
KR102253995B1 (ko) 2013-03-12 2021-05-18 마이크로닉 아베 기계적으로 생성된 정렬 표식 방법 및 정렬 시스템
WO2014140047A2 (en) 2013-03-12 2014-09-18 Micronic Mydata AB Method and device for writing photomasks with reduced mura errors
JP2014216377A (ja) * 2013-04-23 2014-11-17 イビデン株式会社 電子部品とその製造方法及び多層プリント配線板の製造方法
JP6234074B2 (ja) * 2013-06-07 2017-11-22 オリンパス株式会社 半導体装置、固体撮像装置、および撮像装置
US9142475B2 (en) 2013-08-13 2015-09-22 Intel Corporation Magnetic contacts
US9263405B2 (en) * 2013-12-05 2016-02-16 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device
EP2889900B1 (en) 2013-12-19 2019-11-06 IMEC vzw Method for aligning micro-electronic components using an alignment liquid and electrostatic alignment as well as corresponding assembly of aligned micro-electronic components
WO2015157124A1 (en) 2014-04-07 2015-10-15 Flir Systems, Inc. Method and systems for coupling semiconductor substrates
WO2016048347A1 (en) 2014-09-26 2016-03-31 Intel Corporation Flexible packaging architecture
JP6470320B2 (ja) * 2015-02-04 2019-02-13 オリンパス株式会社 半導体装置
US10446522B2 (en) * 2015-04-16 2019-10-15 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming multiple conductive features in semiconductor devices in a same formation process
US9971970B1 (en) * 2015-04-27 2018-05-15 Rigetti & Co, Inc. Microwave integrated quantum circuits with VIAS and methods for making the same
CN104778904B (zh) * 2015-05-08 2017-11-24 合肥京东方光电科技有限公司 一种显示面板母板及其制备方法
KR20160142943A (ko) * 2015-06-03 2016-12-14 한국전자통신연구원 반도체 패키지 및 반도체 패키지의 제조 방법
US9633882B2 (en) * 2015-09-29 2017-04-25 Globalfoundries Singapore Pte. Ltd. Integrated circuits with alignment marks and methods of producing the same
US10636757B2 (en) * 2017-08-29 2020-04-28 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit component package and method of fabricating the same
US11417569B2 (en) * 2017-09-18 2022-08-16 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure having integrated circuit component with conductive terminals of different dimensions
US10217718B1 (en) * 2017-10-13 2019-02-26 Denselight Semiconductors Pte. Ltd. Method for wafer-level semiconductor die attachment
US10276539B1 (en) * 2017-10-30 2019-04-30 Micron Technology, Inc. Method for 3D ink jet TCB interconnect control
DE102018103431A1 (de) * 2018-02-15 2019-08-22 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Verbindung zwischen Bauteilen und Bauelement aus Bauteilen
US11009798B2 (en) 2018-09-05 2021-05-18 Micron Technology, Inc. Wafer alignment markers, systems, and related methods
US11251096B2 (en) 2018-09-05 2022-02-15 Micron Technology, Inc. Wafer registration and overlay measurement systems and related methods
EP3637963B1 (en) * 2018-10-12 2024-02-07 AT&S Austria Technologie & Systemtechnik Aktiengesellschaft Component carrier structures connected by cooperating magnet structures
CN111524873B (zh) 2019-02-01 2022-05-13 台达电子企业管理（上海）有限公司 嵌入式封装模块及其封装方法
US11600590B2 (en) * 2019-03-22 2023-03-07 Advanced Semiconductor Engineering, Inc. Semiconductor device and semiconductor package
FR3105877A1 (fr) * 2019-12-30 2021-07-02 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de connexion autoalignée d’une structure à un support, dispositif obtenu à partir d’un tel procédé, et les structure et support mis en œuvre par un tel procédé
JP2021129084A (ja) * 2020-02-17 2021-09-02 キオクシア株式会社 半導体装置およびその製造方法
JP2021150626A (ja) * 2020-03-24 2021-09-27 キオクシア株式会社 メモリデバイス及びメモリデバイスの製造方法
JP7721503B2 (ja) * 2020-03-26 2025-08-12 ローム株式会社 半導体装置
US11721637B2 (en) * 2020-05-27 2023-08-08 Taiwan Semiconductor Manufacturing Company, Ltd. Patterning a transparent wafer to form an alignment mark in the transparent wafer
KR102877021B1 (ko) * 2020-09-03 2025-10-24 삼성전자주식회사 반도체 패키지
US11855028B2 (en) 2021-01-21 2023-12-26 Taiwan Semiconductor Manufacturing Hybrid micro-bump integration with redistribution layer
CN113013124B (zh) * 2021-02-24 2025-09-09 日月光半导体制造股份有限公司 半导体封装装置及其制造方法
CN113594119B (zh) * 2021-06-25 2024-05-14 苏州汉天下电子有限公司 半导体封装及其制造方法
US12381158B2 (en) 2022-03-18 2025-08-05 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer bonding method and bonded device structure
US20230299041A1 (en) * 2022-03-18 2023-09-21 Taiwan Semiconductor Manufacturing Co., Ltd. Wafer Bonding Method and Bonded Device Structure
CN119563226A (zh) * 2023-06-02 2025-03-04 东北微科技株式会社 微小元件、整列系统及安装方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06112270A (ja) * 1992-09-30 1994-04-22 Kyocera Corp 半導体素子の実装方法
JP2699938B2 (ja) * 1995-06-30 1998-01-19 日本電気株式会社 プリント板ユニット
JPH10112477A (ja) * 1996-10-04 1998-04-28 Fuji Xerox Co Ltd 半導体装置の製造方法及び半導体装置
US6333206B1 (en) * 1996-12-24 2001-12-25 Nitto Denko Corporation Process for the production of semiconductor device
CN1194595C (zh) * 2001-12-28 2005-03-23 全懋精密科技股份有限公司 一种高密度多层电路板的结构及其制作方法
US6750133B2 (en) * 2002-10-24 2004-06-15 Intel Corporation Selective ball-limiting metallurgy etching processes for fabrication of electroplated tin bumps
JP2005260128A (ja) * 2004-03-15 2005-09-22 Yamaha Corp 半導体素子及びそれを備えたウエハレベル・チップサイズ・パッケージ
US7830011B2 (en) * 2004-03-15 2010-11-09 Yamaha Corporation Semiconductor element and wafer level chip size package therefor
JP2005268623A (ja) * 2004-03-19 2005-09-29 Yamaha Corp 半導体素子及び回路基板並びにそれらを用いた実装構造
KR100713579B1 (ko) * 2004-05-31 2007-05-02 강준모 반도체소자 얼라인 방법 및 그에 의해 형성된 반도체 구조물
FR2873675B1 (fr) 2004-07-28 2006-09-22 Commissariat Energie Atomique Dispositif microtechnologique comportant des structures assemblees magnetiquement et procede d' assemblage
JP2006054275A (ja) * 2004-08-11 2006-02-23 Sony Corp 半導体装置の製造方法および半導体製造装置
EP1962569A1 (en) * 2005-12-16 2008-08-27 Ibiden Co., Ltd. Multilayer printed wiring plate, and method for fabricating the same
JP5151053B2 (ja) * 2006-03-30 2013-02-27 富士通セミコンダクター株式会社 半導体装置の製造方法
JP2009188720A (ja) * 2008-02-06 2009-08-20 Panasonic Corp 固体撮像装置およびその製造方法
JP5568969B2 (ja) * 2009-11-30 2014-08-13 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
US8486726B2 (en) * 2009-12-02 2013-07-16 Veeco Instruments Inc. Method for improving performance of a substrate carrier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150049166A (ko) * 2013-10-29 2015-05-08 삼성전자주식회사 반도체 패키지
KR20220036093A (ko) * 2020-09-15 2022-03-22 에스케이하이닉스 주식회사 이미지 센싱 장치
US12364029B2 (en) 2020-09-15 2025-07-15 SK Hynix Inc. Image sensing device including light reception alignment marks

Also Published As

Publication number Publication date
US9548290B2 (en) 2017-01-17
CN102820284A (zh) 2012-12-12
KR20190054039A (ko) 2019-05-21
TWI497678B (zh) 2015-08-21
KR102071823B1 (ko) 2020-01-30
US20120313236A1 (en) 2012-12-13
CN102820284B (zh) 2017-07-14
TW201250975A (en) 2012-12-16
JP2012256737A (ja) 2012-12-27

Similar Documents

Publication Publication Date Title
KR102071823B1 (ko) 반도체 장치 및 반도체 장치의 제조 방법
KR101998884B1 (ko) 반도체 장치 및 반도체 장치의 제조 방법
US7919410B2 (en) Packaging methods for imager devices
US10026770B2 (en) Semiconductor device, method for manufacturing the same, and electronic device
CN102891151B (zh) 背照式图像传感器的低应力腔体封装及其制作方法
TW451368B (en) Flip chip assembly of semiconductor IC chips
US7847400B2 (en) Semiconductor package substrate structure and manufacturing method thereof
TWI523175B (zh) 半導體裝置，製造半導體裝置的方法，以及電子裝置
JP4987928B2 (ja) 半導体装置の製造方法
CN107112250A (zh) 标记半导体封装的方法
KR20060092079A (ko) 반도체 장치 및 그 제조 방법
TW561602B (en) High density integrated circuit packages and method for the same
JP2011054805A (ja) 半導体装置、及び半導体装置の製造方法
KR20100109376A (ko) 반도체 장치의 제조 방법 및 반도체 장치
EP2963686B1 (en) Semiconductor photodetection device
TW201232748A (en) Package structure mechanically assembling with passive component and manufacturing method of its substrate
TWI222190B (en) Process for fabricating bumps and patterned thermal plastic layer
Okuyam et al. Developnent of solder bump fabrication in multicalp modules

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T13-X000 Administrative time limit extension granted

St.27 status event code: U-3-3-T10-T13-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

E601 Decision to refuse application
E801 Decision on dismissal of amendment
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

PE0801 Dismissal of amendment

St.27 status event code: A-2-2-P10-P12-nap-PE0801

A107 Divisional application of patent
PA0107 Divisional application

St.27 status event code: A-0-1-A10-A18-div-PA0107

St.27 status event code: A-0-1-A10-A16-div-PA0107

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000