JP2012256737A - 半導体装置及び半導体装置の製造方法 - Google Patents

半導体装置及び半導体装置の製造方法 Download PDF

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Publication number
JP2012256737A
JP2012256737A JP2011129192A JP2011129192A JP2012256737A JP 2012256737 A JP2012256737 A JP 2012256737A JP 2011129192 A JP2011129192 A JP 2011129192A JP 2011129192 A JP2011129192 A JP 2011129192A JP 2012256737 A JP2012256737 A JP 2012256737A
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semiconductor device
alignment mark
alignment
semiconductor
semiconductor element
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JP2011129192A
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Japanese (ja)
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JP2012256737A5 (https=
Inventor
Satoru Wakiyama
悟 脇山
Masaki Minami
正樹 南
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Sony Corp
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Sony Corp
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Priority to JP2011129192A priority Critical patent/JP2012256737A/ja
Priority to TW101118058A priority patent/TWI497678B/zh
Priority to CN201210177169.5A priority patent/CN102820284B/zh
Priority to KR1020120058005A priority patent/KR20120137238A/ko
Priority to US13/487,163 priority patent/US9548290B2/en
Publication of JP2012256737A publication Critical patent/JP2012256737A/ja
Publication of JP2012256737A5 publication Critical patent/JP2012256737A5/ja
Priority to KR1020190054795A priority patent/KR102071823B1/ko
Ceased legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Engineering & Computer Science (AREA)
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JP2011129192A 2011-06-09 2011-06-09 半導体装置及び半導体装置の製造方法 Ceased JP2012256737A (ja)

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TWI497678B (zh) 2015-08-21
KR102071823B1 (ko) 2020-01-30
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