KR20080008562A - 어레이 기판의 제조방법, 어레이 기판 및 이를 갖는표시장치 - Google Patents

어레이 기판의 제조방법, 어레이 기판 및 이를 갖는표시장치 Download PDF

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Publication number
KR20080008562A
KR20080008562A KR1020060067979A KR20060067979A KR20080008562A KR 20080008562 A KR20080008562 A KR 20080008562A KR 1020060067979 A KR1020060067979 A KR 1020060067979A KR 20060067979 A KR20060067979 A KR 20060067979A KR 20080008562 A KR20080008562 A KR 20080008562A
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KR
South Korea
Prior art keywords
gate
layer
electrode
pattern
disposed
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Ceased
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KR1020060067979A
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English (en)
Korean (ko)
Inventor
이제훈
김도현
이은국
정창오
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삼성전자주식회사
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Priority to KR1020060067979A priority Critical patent/KR20080008562A/ko
Priority to US11/779,534 priority patent/US7511300B2/en
Priority to EP07014127A priority patent/EP1881366B1/en
Priority to JP2007188757A priority patent/JP2008028395A/ja
Priority to DE602007009162T priority patent/DE602007009162D1/de
Priority to CNA2007101526391A priority patent/CN101132011A/zh
Publication of KR20080008562A publication Critical patent/KR20080008562A/ko
Priority to US12/392,629 priority patent/US20090162982A1/en
Priority to US13/222,558 priority patent/US20110309510A1/en
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/13629—Multilayer wirings
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Formation Of Insulating Films (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020060067979A 2006-07-20 2006-07-20 어레이 기판의 제조방법, 어레이 기판 및 이를 갖는표시장치 Ceased KR20080008562A (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1020060067979A KR20080008562A (ko) 2006-07-20 2006-07-20 어레이 기판의 제조방법, 어레이 기판 및 이를 갖는표시장치
US11/779,534 US7511300B2 (en) 2006-07-20 2007-07-18 Array substrate, display device having the same and method of manufacturing the same
EP07014127A EP1881366B1 (en) 2006-07-20 2007-07-19 Array substrate with copper conductors and method of manufacturing the same
JP2007188757A JP2008028395A (ja) 2006-07-20 2007-07-19 アレイ基板、これを有する表示装置及びその製造方法
DE602007009162T DE602007009162D1 (de) 2006-07-20 2007-07-19 Array-Substrat mit Kupferleitern und Herstellungsverfahren dafür
CNA2007101526391A CN101132011A (zh) 2006-07-20 2007-07-20 阵列基板及其制造方法和具有阵列基板的显示器件
US12/392,629 US20090162982A1 (en) 2006-07-20 2009-02-25 Array substrate, display device having the same and method of manufacturing the same
US13/222,558 US20110309510A1 (en) 2006-07-20 2011-08-31 Array substrate, display device having the same and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060067979A KR20080008562A (ko) 2006-07-20 2006-07-20 어레이 기판의 제조방법, 어레이 기판 및 이를 갖는표시장치

Publications (1)

Publication Number Publication Date
KR20080008562A true KR20080008562A (ko) 2008-01-24

Family

ID=38421183

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060067979A Ceased KR20080008562A (ko) 2006-07-20 2006-07-20 어레이 기판의 제조방법, 어레이 기판 및 이를 갖는표시장치

Country Status (6)

Country Link
US (3) US7511300B2 (enExample)
EP (1) EP1881366B1 (enExample)
JP (1) JP2008028395A (enExample)
KR (1) KR20080008562A (enExample)
CN (1) CN101132011A (enExample)
DE (1) DE602007009162D1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140087608A (ko) * 2012-12-31 2014-07-09 엘지디스플레이 주식회사 박막트랜지스터 및 그 제조 방법
KR101449460B1 (ko) * 2008-05-23 2014-10-13 주성엔지니어링(주) 박막 트랜지스터 어레이 기판 및 이의 제조 방법
US9502579B2 (en) 2014-07-25 2016-11-22 Samsung Display Co., Ltd. Thin film transistor substrate
KR20170079537A (ko) * 2015-12-30 2017-07-10 엘지디스플레이 주식회사 박막 트랜지스터 기판

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4855315B2 (ja) * 2007-03-30 2012-01-18 株式会社アルバック 薄膜トランジスタ製造方法、液晶表示装置製造方法
KR20090080790A (ko) * 2008-01-22 2009-07-27 삼성전자주식회사 박막 트랜지스터 표시판 및 이를 제조하는 방법
KR101253497B1 (ko) * 2008-06-02 2013-04-11 엘지디스플레이 주식회사 액정표시장치용 어레이 기판의 제조방법
KR101476817B1 (ko) 2009-07-03 2014-12-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터를 갖는 표시 장치 및 그 제작 방법
KR102446585B1 (ko) 2009-11-27 2022-09-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작방법
WO2011104943A1 (ja) 2010-02-24 2011-09-01 シャープ株式会社 液晶表示パネル及び液晶表示装置
KR101132119B1 (ko) * 2010-03-10 2012-04-05 삼성모바일디스플레이주식회사 액정표시장치 어레이 기판 및 그 제조방법
US8563095B2 (en) * 2010-03-15 2013-10-22 Applied Materials, Inc. Silicon nitride passivation layer for covering high aspect ratio features
CN102213877B (zh) * 2010-04-06 2013-10-02 北京京东方光电科技有限公司 阵列基板、液晶面板及其制造方法
KR101113354B1 (ko) * 2010-04-16 2012-02-29 삼성모바일디스플레이주식회사 표시 장치 및 그 제조방법
KR101702645B1 (ko) 2010-08-18 2017-02-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR101832361B1 (ko) * 2011-01-19 2018-04-16 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR20130021607A (ko) * 2011-08-23 2013-03-06 삼성디스플레이 주식회사 저저항 배선, 박막 트랜지스터, 및 박막 트랜지스터 표시판과 이들을 제조하는 방법
KR101774491B1 (ko) 2011-10-14 2017-09-13 삼성전자주식회사 유기 포토다이오드를 포함하는 유기 픽셀, 이의 제조 방법, 및 상기 유기 픽셀을 포함하는 장치들
JP5912046B2 (ja) * 2012-01-26 2016-04-27 株式会社Ｓｈカッパープロダクツ 薄膜トランジスタ、その製造方法および該薄膜トランジスタを用いた表示装置
KR102068956B1 (ko) * 2012-02-15 2020-01-23 엘지디스플레이 주식회사 박막트랜지스터, 박막트랜지스터 어레이 기판 및 이의 제조방법
CN102629592A (zh) * 2012-03-23 2012-08-08 京东方科技集团股份有限公司 阵列基板及其制作方法、显示装置
JP6004319B2 (ja) * 2012-04-06 2016-10-05 住友電工デバイス・イノベーション株式会社 半導体装置および半導体装置の製造方法
CN102664194B (zh) * 2012-04-10 2015-01-07 深超光电（深圳）有限公司 薄膜晶体管
KR101968115B1 (ko) 2012-04-23 2019-08-13 엘지디스플레이 주식회사 어레이 기판 및 이의 제조방법
CN104285302B (zh) * 2012-05-10 2017-08-22 株式会社半导体能源研究所 半导体装置
CN102738007B (zh) * 2012-07-02 2014-09-03 京东方科技集团股份有限公司 一种薄膜晶体管的制造方法及阵列基板的制造方法
KR102004398B1 (ko) * 2012-07-24 2019-07-29 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
JP2014032999A (ja) * 2012-08-01 2014-02-20 Panasonic Liquid Crystal Display Co Ltd 薄膜トランジスタ及びその製造方法
KR20140021096A (ko) * 2012-08-07 2014-02-20 한국전자통신연구원 도핑 베리어를 가지는 자기 정렬 박막 트랜지스터 및 그 제조 방법
JP5951442B2 (ja) * 2012-10-17 2016-07-13 株式会社半導体エネルギー研究所 半導体装置
KR20140068918A (ko) * 2012-11-02 2014-06-09 보에 테크놀로지 그룹 컴퍼니 리미티드 박막 트랜지스터(tft), 그 제조 방법, 어레이 기판, 디스플레이 장치 및 장벽층
KR102028505B1 (ko) * 2012-11-19 2019-10-04 엘지디스플레이 주식회사 유기발광 표시패널 및 이의 제조방법
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TWI651574B (zh) * 2015-01-12 2019-02-21 友達光電股份有限公司 顯示面板及其製造方法
JP2016181332A (ja) 2015-03-23 2016-10-13 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 表示装置および表示装置の製造方法
US10147745B2 (en) 2015-04-01 2018-12-04 Shanghai Tianma Micro-electronics Co., Ltd. Array substrate, display panel and display device
CN104730782B (zh) * 2015-04-01 2018-03-27 上海天马微电子有限公司 一种阵列基板、显示面板和显示装置
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KR102494732B1 (ko) 2015-10-16 2023-02-01 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 그 제조 방법
KR20240012619A (ko) * 2015-11-20 2024-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 이 반도체 장치의 제작 방법, 또는 이 반도체 장치를 가지는 표시 장치
CN113219749B (zh) * 2016-02-17 2023-01-10 群创光电股份有限公司 主动元件阵列基板以及显示面板
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