KR20070058985A - 비휘발성 메모리 어레이 구조 - Google Patents
비휘발성 메모리 어레이 구조 Download PDFInfo
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- KR20070058985A KR20070058985A KR1020060121965A KR20060121965A KR20070058985A KR 20070058985 A KR20070058985 A KR 20070058985A KR 1020060121965 A KR1020060121965 A KR 1020060121965A KR 20060121965 A KR20060121965 A KR 20060121965A KR 20070058985 A KR20070058985 A KR 20070058985A
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- 239000000758 substrate Substances 0.000 claims abstract description 13
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- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 12
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- 239000012212 insulator Substances 0.000 description 8
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- 229910021529 ammonia Inorganic materials 0.000 description 2
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- 238000005468 ion implantation Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
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- 229910020776 SixNy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
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- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- AIOWANYIHSOXQY-UHFFFAOYSA-N cobalt silicon Chemical compound [Si].[Co] AIOWANYIHSOXQY-UHFFFAOYSA-N 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- IJKVHSBPTUYDLN-UHFFFAOYSA-N dihydroxy(oxo)silane Chemical compound O[Si](O)=O IJKVHSBPTUYDLN-UHFFFAOYSA-N 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
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- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
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- H—ELECTRICITY
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- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
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- Condensed Matter Physics & Semiconductors (AREA)
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- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (9)
- 메모리 디바이스로서,기판의 제 1 활성 영역;상기 기판의 제 2 활성 영역으로서, 상기 제 1 및 제 2 활성 영역들은 실질적으로 평행한 길이방향축들을 가진, 상기 제 2 활성 영역; 및상기 제 1 활성 영역과 상기 제 2 활성 영역 사이에 위치된 복수의 트랜지스터들로서, 상기 제 1 활성 영역과 상기 제 2 활성 영역이 상기 복수의 트랜지스터들을 위한 소스/드레인 영역들로서 작용하도록 하는 상기 복수의 트랜지스터들; 을 포함하는, 메모리 디바이스.
- 제 1 항에 있어서,상기 트랜지스터들은 실리콘-산화물-질화물-산화물-실리콘(silicon-oxide-nitride-oxide-silicon; SONOS) 트랜지스터들인, 메모리 디바이스.
- 제 1 항에 있어서,상기 제 1 활성 영역 및 제 2 활성 영역의 상기 길이방향축들에 실질적으로 수직인 길이방향축들을 가진 워드 라인들을 더 포함하는, 메모리 디바이스.
- 제 3 항에 있어서,상기 복수의 트랜지스터들은 상기 제 1 활성 영역과 상기 제 2 활성 영역 사이에 위치되고 상기 워드 라인들에 전기적으로 접속된 복수의 게이트들을 포함하는, 메모리 디바이스.
- 제 1 항에 있어서,상기 제 1 활성 영역 및 제 2 활성 영역의 상기 길이방향축들에 실질적으로 평행한 길이방향축들을 가진 비트 라인들을 더 포함하는, 메모리 디바이스.
- 메모리 디바이스로서,복수의 트랜지스터들로서, 각각의 트랜지스터는 게이트, 소스 영역, 및 드레인 영역을 가지며, 상기 복수의 트랜지스터들의 상기 소스 영역들은 제 1 공통 활성 영역을 공유하고, 상기 복수의 트랜지스터들의 상기 드레인 영역들은 제 2 공통 활성 영역을 공유하고, 제 1 공통 활성 영역 및 상기 제 2 공통 활성 영역은 실질적으로 평행한 길이방향축들을 가지는, 상기 복수의 트랜지스터들; 및상기 게이트들에 전기적으로 결합된 워드 라인들으로서, 상기 워드 라인들은 상기 제 1 공통 활성 영역 및 상기 제 2 공통 활성 영역의 상기 길이방향축들에 실질적으로 수직인 길이방향축들을 가지는, 메모리 디바이스.
- 제 6 항에 있어서,상기 트랜지스터들은 실리콘-산화물-질화물-산화물-실리콘 (SONOS) 트랜지스 터들인, 메모리 디바이스.
- 제 6 항에 있어서,상기 제 1 공통 활성 영역 및 상기 제 2 공통 활성 영역의 상기 길이방향축들에 실질적으로 평행한 길이방향축들을 가지는 비트 라인들을 더 포함하는, 메모리 디바이스.
- 제 6 항에 있어서,상기 게이트들은 상기 제 1 공통 활성 영역과 상기 제 2 공통 활성 영역 사이에 형성되는, 메모리 디바이스.
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Application Number | Priority Date | Filing Date | Title |
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US11/294,280 US7538384B2 (en) | 2005-12-05 | 2005-12-05 | Non-volatile memory array structure |
US11/294,280 | 2005-12-05 |
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Publication Number | Publication Date |
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KR20070058985A true KR20070058985A (ko) | 2007-06-11 |
KR100779638B1 KR100779638B1 (ko) | 2007-11-26 |
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US (1) | US7538384B2 (ko) |
JP (2) | JP2007158297A (ko) |
KR (1) | KR100779638B1 (ko) |
CN (1) | CN1979866B (ko) |
TW (1) | TWI306670B (ko) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9716037B2 (en) | 2011-12-22 | 2017-07-25 | Intel Corporation | Gate aligned contact and method to fabricate same |
US10269697B2 (en) | 2015-12-28 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US12033894B2 (en) | 2023-07-13 | 2024-07-09 | Intel Corporation | Gate aligned contact and method to fabricate same |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4199338B2 (ja) * | 1998-10-02 | 2008-12-17 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
KR100729366B1 (ko) * | 2006-05-19 | 2007-06-15 | 삼성전자주식회사 | 반도체 장치 및 그 형성 방법 |
JP5147654B2 (ja) | 2008-11-18 | 2013-02-20 | パナソニック株式会社 | 半導体装置 |
US8791522B2 (en) * | 2011-10-12 | 2014-07-29 | Macronix International Co., Ltd. | Non-volatile memory |
TWI683351B (zh) * | 2017-12-14 | 2020-01-21 | 新唐科技股份有限公司 | 半導體裝置及其形成方法 |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088315B2 (ja) | 1989-03-08 | 1996-01-29 | 富士通株式会社 | 半導体装置の製造方法及び半導体装置 |
US4964080A (en) * | 1990-03-09 | 1990-10-16 | Intel Corporation | Three-dimensional memory cell with integral select transistor |
KR920009748B1 (ko) * | 1990-05-31 | 1992-10-22 | 삼성전자 주식회사 | 적층형 캐패시터셀의 구조 및 제조방법 |
JPH0521757A (ja) | 1990-06-15 | 1993-01-29 | Ricoh Co Ltd | 半導体メモリ装置とその製造方法 |
TW301782B (ko) * | 1991-08-16 | 1997-04-01 | Gold Star Electronics | |
US5768192A (en) | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
US6768165B1 (en) | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
JP2000195974A (ja) * | 1998-12-25 | 2000-07-14 | Sony Corp | 半導体不揮発性記憶装置およびその製造方法 |
JP3837253B2 (ja) * | 1999-03-09 | 2006-10-25 | 三洋電機株式会社 | 不揮発性半導体記憶装置とその製造方法 |
KR100357185B1 (ko) * | 2000-02-03 | 2002-10-19 | 주식회사 하이닉스반도체 | 비휘발성 메모리소자 및 그의 제조방법 |
JP4051175B2 (ja) * | 2000-11-17 | 2008-02-20 | スパンション エルエルシー | 不揮発性半導体メモリ装置および製造方法 |
DE10110150A1 (de) * | 2001-03-02 | 2002-09-19 | Infineon Technologies Ag | Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und Speicherzellenarray |
US6897514B2 (en) | 2001-03-28 | 2005-05-24 | Matrix Semiconductor, Inc. | Two mask floating gate EEPROM and method of making |
JP2002299473A (ja) * | 2001-03-29 | 2002-10-11 | Fujitsu Ltd | 半導体記憶装置及びその駆動方法 |
JP4565767B2 (ja) | 2001-04-11 | 2010-10-20 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
TW510048B (en) * | 2001-11-16 | 2002-11-11 | Macronix Int Co Ltd | Manufacturing method of non-volatile memory |
JP2003163289A (ja) * | 2001-11-27 | 2003-06-06 | Mitsubishi Electric Corp | 半導体メモリの製造方法、及び該半導体メモリを含む半導体装置の製造方法 |
TW520554B (en) * | 2002-01-11 | 2003-02-11 | Macronix Int Co Ltd | Memory device structure and its manufacturing method |
JP2003297957A (ja) * | 2002-04-05 | 2003-10-17 | Mitsubishi Electric Corp | 半導体装置及び半導体装置の製造方法 |
KR100432889B1 (ko) | 2002-04-12 | 2004-05-22 | 삼성전자주식회사 | 2비트 기입가능한 비휘발성 메모리 소자, 그 구동방법 및그 제조방법 |
JP2004022575A (ja) * | 2002-06-12 | 2004-01-22 | Sanyo Electric Co Ltd | 半導体装置 |
US6734063B2 (en) | 2002-07-22 | 2004-05-11 | Infineon Technologies Ag | Non-volatile memory cell and fabrication method |
JP2004104009A (ja) * | 2002-09-12 | 2004-04-02 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2004253571A (ja) * | 2003-02-19 | 2004-09-09 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
JP2005005513A (ja) * | 2003-06-12 | 2005-01-06 | Sony Corp | 不揮発性半導体メモリ装置およびその読み出し方法 |
US6958272B2 (en) | 2004-01-12 | 2005-10-25 | Advanced Micro Devices, Inc. | Pocket implant for complementary bit disturb improvement and charging improvement of SONOS memory cell |
US6987298B2 (en) * | 2004-02-03 | 2006-01-17 | Solide State System Co., Ltd. | Circuit layout and structure for a non-volatile memory |
KR100645040B1 (ko) | 2004-02-09 | 2006-11-10 | 삼성전자주식회사 | 소오스 스트래핑을 갖는 플래시 메모리 소자의 셀 어레이 |
US6952366B2 (en) | 2004-02-10 | 2005-10-04 | Micron Technology, Inc. | NROM flash memory cell with integrated DRAM |
US7072210B2 (en) | 2004-04-26 | 2006-07-04 | Applied Intellectual Properties Co., Ltd. | Memory array |
US6878988B1 (en) * | 2004-06-02 | 2005-04-12 | United Microelectronics Corp. | Non-volatile memory with induced bit lines |
JP2006024868A (ja) * | 2004-07-09 | 2006-01-26 | Oki Electric Ind Co Ltd | 半導体不揮発性メモリセルアレイとその製造方法 |
KR101128711B1 (ko) * | 2005-04-29 | 2012-03-23 | 매그나칩 반도체 유한회사 | 노아형 플래시 메모리 소자 |
WO2006129341A1 (ja) * | 2005-05-30 | 2006-12-07 | Spansion Llc | 半導体装置およびその製造方法 |
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- 2006-08-09 CN CN2006101042952A patent/CN1979866B/zh active Active
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US9716037B2 (en) | 2011-12-22 | 2017-07-25 | Intel Corporation | Gate aligned contact and method to fabricate same |
US10607884B2 (en) | 2011-12-22 | 2020-03-31 | Intel Corporation | Gate aligned contact and method to fabricate same |
US10910265B2 (en) | 2011-12-22 | 2021-02-02 | Intel Corporation | Gate aligned contact and method to fabricate same |
US11495496B2 (en) | 2011-12-22 | 2022-11-08 | Intel Corporation | Gate aligned contact and method to fabricate same |
US11756829B2 (en) | 2011-12-22 | 2023-09-12 | Intel Corporation | Gate aligned contact and method to fabricate same |
US10269697B2 (en) | 2015-12-28 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
US12033894B2 (en) | 2023-07-13 | 2024-07-09 | Intel Corporation | Gate aligned contact and method to fabricate same |
Also Published As
Publication number | Publication date |
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JP2007158297A (ja) | 2007-06-21 |
US20070126053A1 (en) | 2007-06-07 |
US7538384B2 (en) | 2009-05-26 |
JP5733997B2 (ja) | 2015-06-10 |
KR100779638B1 (ko) | 2007-11-26 |
TW200723544A (en) | 2007-06-16 |
CN1979866B (zh) | 2010-05-12 |
JP2011103488A (ja) | 2011-05-26 |
TWI306670B (en) | 2009-02-21 |
CN1979866A (zh) | 2007-06-13 |
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