JP2007158297A - メモリデバイス - Google Patents
メモリデバイス Download PDFInfo
- Publication number
- JP2007158297A JP2007158297A JP2006212581A JP2006212581A JP2007158297A JP 2007158297 A JP2007158297 A JP 2007158297A JP 2006212581 A JP2006212581 A JP 2006212581A JP 2006212581 A JP2006212581 A JP 2006212581A JP 2007158297 A JP2007158297 A JP 2007158297A
- Authority
- JP
- Japan
- Prior art keywords
- active region
- transistor
- word line
- memory device
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 abstract description 17
- 239000002184 metal Substances 0.000 abstract description 17
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 62
- 238000000034 method Methods 0.000 description 31
- 230000008569 process Effects 0.000 description 16
- 238000012545 processing Methods 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 229910021332 silicide Inorganic materials 0.000 description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 239000002131 composite material Substances 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 2
- 229910021334 nickel silicide Inorganic materials 0.000 description 2
- 150000002923 oximes Chemical class 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7923—Programmable transistors with more than two possible different levels of programmation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
【解決手段】アクティブ領域210を基板に形成し、隣接するアクティブ領域210の間にトランジスタを形成することで、アクティブ領域210がトランジスタのソースとドレインを形成する。ワード線222はアクティブ領域210と垂直に形成され、トランジスタのゲート220に電気的に接続される。アクティブ領域210上にビット線BL−1〜BL−4を形成し、ソースとドレインの領域と電気的に接続する。一実施例において、トランジスタ上に形成した誘電体層の上部にある多結晶シリコンで、ワード線222を形成してもよい。この実施例では、ビット線BL−1〜BL−4が金属層上に形成され、ワード線222と誘電体層は、平坦または非平坦な表面を有する。
【選択図】図2
Description
220 ゲート
222 ワード線
310 基板
312 トランジスタ
322 ソース/ドレイン領域(ソース領域、ドレイン領域)
BL−1,BL−2,BL−3,BL−4 ビット線
Claims (9)
- 基板に存在する第1のアクティブ領域と、
基板に存在する第2のアクティブ領域と、
複数のトランジスタとを備え、
前記第1のアクティブ領域と前記第2のアクティブ領域はほぼ平行な長手方向軸を有しており、
前記第1のアクティブ領域と前記第2のアクティブ領域が、前記複数のトランジスタのソースとドレインの領域として動作するように、前記複数のトランジスタが前記第1のアクティブ領域と前記第2のアクティブ領域との間に位置することを特徴とするメモリデバイス。 - 前記トランジスタが、シリコン−酸化物−窒化物−酸化物−シリコン(SONOS)トランジスタであることを特徴とする請求項1記載のメモリデバイス。
- 前記第1のアクティブ領域と前記第2のアクティブ領域の前記長手方向軸にほぼ垂直な長手方向軸を有するワード線を、さらに備えたことを特徴とする請求項1記載のメモリデバイス。
- 前記複数のトランジスタが、前記第1のアクティブ領域と前記第2のアクティブ領域との間に位置し、前記ワード線に電気的に接続する複数のゲートを有することを特徴とする請求項3記載のメモリデバイス。
- 前記第1のアクティブ領域と前記第2のアクティブ領域の前記長手方向軸にほぼ平行な長手方向軸を有するビット線を、さらに備えたことを特徴とする請求項1記載のメモリデバイス。
- 複数のトランジスタと、ワード線とを備え、
前記トランジスタのそれぞれが、ゲートと、ソース領域と、ドレイン領域とを有し、前記複数のトランジスタの前記ソース領域が第1の共通アクティブ領域を共有し、前記複数のトランジスタの前記ドレイン領域が第2の共通アクティブ領域を共有し、前記第1の共通アクティブ領域と前記第2の共通アクティブ領域がほぼ平行な長手方向軸を有していると共に、
前記ワード線は、前記ゲートに電気的に接続され、前記第1の共通アクティブ領域と前記第2の共通アクティブ領域の長手方向軸とほぼ垂直な長手方向軸を有することを特徴とするメモリデバイス。 - 前記トランジスタが、シリコン−酸化物−窒化物−酸化物−シリコン(SONOS)トランジスタであることを特徴とする請求項6記載のメモリデバイス。
- 前記第1の共通アクティブ領域と前記第2の共通アクティブ領域の前記長手方向軸にほぼ平行な長手方向軸を有するビット線を、さらに備えたことを特徴とする請求項6記載のメモリデバイス。
- 前記ゲートが、前記第1の共通アクティブ領域と前記第2の共通アクティブ領域との間に形成されることを特徴とする請求項6記載のメモリデバイス。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/294,280 US7538384B2 (en) | 2005-12-05 | 2005-12-05 | Non-volatile memory array structure |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011015285A Division JP5733997B2 (ja) | 2005-12-05 | 2011-01-27 | メモリデバイス |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007158297A true JP2007158297A (ja) | 2007-06-21 |
Family
ID=38117850
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006212581A Pending JP2007158297A (ja) | 2005-12-05 | 2006-08-03 | メモリデバイス |
JP2011015285A Active JP5733997B2 (ja) | 2005-12-05 | 2011-01-27 | メモリデバイス |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011015285A Active JP5733997B2 (ja) | 2005-12-05 | 2011-01-27 | メモリデバイス |
Country Status (5)
Country | Link |
---|---|
US (1) | US7538384B2 (ja) |
JP (2) | JP2007158297A (ja) |
KR (1) | KR100779638B1 (ja) |
CN (1) | CN1979866B (ja) |
TW (1) | TWI306670B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4199338B2 (ja) * | 1998-10-02 | 2008-12-17 | 富士通マイクロエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
KR100729366B1 (ko) * | 2006-05-19 | 2007-06-15 | 삼성전자주식회사 | 반도체 장치 및 그 형성 방법 |
JP5147654B2 (ja) | 2008-11-18 | 2013-02-20 | パナソニック株式会社 | 半導体装置 |
US8791522B2 (en) * | 2011-10-12 | 2014-07-29 | Macronix International Co., Ltd. | Non-volatile memory |
CN104011835B (zh) | 2011-12-22 | 2016-10-26 | 英特尔公司 | 栅极对准接触部及其制造方法 |
US10269697B2 (en) | 2015-12-28 | 2019-04-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and manufacturing method thereof |
TWI683351B (zh) * | 2017-12-14 | 2020-01-21 | 新唐科技股份有限公司 | 半導體裝置及其形成方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002158298A (ja) * | 2000-11-17 | 2002-05-31 | Fujitsu Ltd | 不揮発性半導体メモリ装置および製造方法 |
JP2003163289A (ja) * | 2001-11-27 | 2003-06-06 | Mitsubishi Electric Corp | 半導体メモリの製造方法、及び該半導体メモリを含む半導体装置の製造方法 |
JP2003297957A (ja) * | 2002-04-05 | 2003-10-17 | Mitsubishi Electric Corp | 半導体装置及び半導体装置の製造方法 |
JP2004104009A (ja) * | 2002-09-12 | 2004-04-02 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2004253571A (ja) * | 2003-02-19 | 2004-09-09 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
JP2004530296A (ja) * | 2001-03-02 | 2004-09-30 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | メモリセルアレイの金属性ビット線の製造方法、メモリセルアレイの製造方法、およびメモリセルアレイ |
JP2005005513A (ja) * | 2003-06-12 | 2005-01-06 | Sony Corp | 不揮発性半導体メモリ装置およびその読み出し方法 |
JP2006024868A (ja) * | 2004-07-09 | 2006-01-26 | Oki Electric Ind Co Ltd | 半導体不揮発性メモリセルアレイとその製造方法 |
WO2006129341A1 (ja) * | 2005-05-30 | 2006-12-07 | Spansion Llc | 半導体装置およびその製造方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088315B2 (ja) | 1989-03-08 | 1996-01-29 | 富士通株式会社 | 半導体装置の製造方法及び半導体装置 |
US4964080A (en) * | 1990-03-09 | 1990-10-16 | Intel Corporation | Three-dimensional memory cell with integral select transistor |
KR920009748B1 (ko) * | 1990-05-31 | 1992-10-22 | 삼성전자 주식회사 | 적층형 캐패시터셀의 구조 및 제조방법 |
JPH0521757A (ja) | 1990-06-15 | 1993-01-29 | Ricoh Co Ltd | 半導体メモリ装置とその製造方法 |
TW301782B (ja) * | 1991-08-16 | 1997-04-01 | Gold Star Electronics | |
US5768192A (en) * | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
JP2000195974A (ja) * | 1998-12-25 | 2000-07-14 | Sony Corp | 半導体不揮発性記憶装置およびその製造方法 |
JP3837253B2 (ja) * | 1999-03-09 | 2006-10-25 | 三洋電機株式会社 | 不揮発性半導体記憶装置とその製造方法 |
KR100357185B1 (ko) * | 2000-02-03 | 2002-10-19 | 주식회사 하이닉스반도체 | 비휘발성 메모리소자 및 그의 제조방법 |
US6897514B2 (en) * | 2001-03-28 | 2005-05-24 | Matrix Semiconductor, Inc. | Two mask floating gate EEPROM and method of making |
JP2002299473A (ja) * | 2001-03-29 | 2002-10-11 | Fujitsu Ltd | 半導体記憶装置及びその駆動方法 |
JP4565767B2 (ja) | 2001-04-11 | 2010-10-20 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
TW510048B (en) * | 2001-11-16 | 2002-11-11 | Macronix Int Co Ltd | Manufacturing method of non-volatile memory |
TW520554B (en) * | 2002-01-11 | 2003-02-11 | Macronix Int Co Ltd | Memory device structure and its manufacturing method |
KR100432889B1 (ko) | 2002-04-12 | 2004-05-22 | 삼성전자주식회사 | 2비트 기입가능한 비휘발성 메모리 소자, 그 구동방법 및그 제조방법 |
JP2004022575A (ja) * | 2002-06-12 | 2004-01-22 | Sanyo Electric Co Ltd | 半導体装置 |
US6734063B2 (en) * | 2002-07-22 | 2004-05-11 | Infineon Technologies Ag | Non-volatile memory cell and fabrication method |
US6958272B2 (en) * | 2004-01-12 | 2005-10-25 | Advanced Micro Devices, Inc. | Pocket implant for complementary bit disturb improvement and charging improvement of SONOS memory cell |
US6987298B2 (en) * | 2004-02-03 | 2006-01-17 | Solide State System Co., Ltd. | Circuit layout and structure for a non-volatile memory |
KR100645040B1 (ko) | 2004-02-09 | 2006-11-10 | 삼성전자주식회사 | 소오스 스트래핑을 갖는 플래시 메모리 소자의 셀 어레이 |
US6952366B2 (en) * | 2004-02-10 | 2005-10-04 | Micron Technology, Inc. | NROM flash memory cell with integrated DRAM |
US7072210B2 (en) * | 2004-04-26 | 2006-07-04 | Applied Intellectual Properties Co., Ltd. | Memory array |
US6878988B1 (en) * | 2004-06-02 | 2005-04-12 | United Microelectronics Corp. | Non-volatile memory with induced bit lines |
KR101128711B1 (ko) * | 2005-04-29 | 2012-03-23 | 매그나칩 반도체 유한회사 | 노아형 플래시 메모리 소자 |
-
2005
- 2005-12-05 US US11/294,280 patent/US7538384B2/en not_active Expired - Fee Related
-
2006
- 2006-07-14 TW TW095125784A patent/TWI306670B/zh not_active IP Right Cessation
- 2006-08-03 JP JP2006212581A patent/JP2007158297A/ja active Pending
- 2006-08-09 CN CN2006101042952A patent/CN1979866B/zh active Active
- 2006-12-05 KR KR1020060121965A patent/KR100779638B1/ko active IP Right Grant
-
2011
- 2011-01-27 JP JP2011015285A patent/JP5733997B2/ja active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002158298A (ja) * | 2000-11-17 | 2002-05-31 | Fujitsu Ltd | 不揮発性半導体メモリ装置および製造方法 |
JP2004530296A (ja) * | 2001-03-02 | 2004-09-30 | インフィネオン テクノロジーズ アクチエンゲゼルシャフト | メモリセルアレイの金属性ビット線の製造方法、メモリセルアレイの製造方法、およびメモリセルアレイ |
JP2003163289A (ja) * | 2001-11-27 | 2003-06-06 | Mitsubishi Electric Corp | 半導体メモリの製造方法、及び該半導体メモリを含む半導体装置の製造方法 |
JP2003297957A (ja) * | 2002-04-05 | 2003-10-17 | Mitsubishi Electric Corp | 半導体装置及び半導体装置の製造方法 |
JP2004104009A (ja) * | 2002-09-12 | 2004-04-02 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2004253571A (ja) * | 2003-02-19 | 2004-09-09 | Seiko Epson Corp | 半導体装置の製造方法及び半導体装置 |
JP2005005513A (ja) * | 2003-06-12 | 2005-01-06 | Sony Corp | 不揮発性半導体メモリ装置およびその読み出し方法 |
JP2006024868A (ja) * | 2004-07-09 | 2006-01-26 | Oki Electric Ind Co Ltd | 半導体不揮発性メモリセルアレイとその製造方法 |
WO2006129341A1 (ja) * | 2005-05-30 | 2006-12-07 | Spansion Llc | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20070126053A1 (en) | 2007-06-07 |
CN1979866B (zh) | 2010-05-12 |
TWI306670B (en) | 2009-02-21 |
KR20070058985A (ko) | 2007-06-11 |
JP5733997B2 (ja) | 2015-06-10 |
US7538384B2 (en) | 2009-05-26 |
KR100779638B1 (ko) | 2007-11-26 |
JP2011103488A (ja) | 2011-05-26 |
CN1979866A (zh) | 2007-06-13 |
TW200723544A (en) | 2007-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10103169B1 (en) | Method of making a three-dimensional memory device using a multi-step hot phosphoric acid wet etch process | |
US7968924B2 (en) | Semiconductor device and a method of manufacturing the same | |
US7399672B2 (en) | Methods of forming nonvolatile memory devices | |
US20150187791A1 (en) | Methods of fabricating three-dimensional semiconductor devices | |
JP5733997B2 (ja) | メモリデバイス | |
US20120007165A1 (en) | Semiconductor devices | |
WO2009119527A1 (ja) | 半導体メモリ及びその製造方法 | |
US7768061B2 (en) | Self aligned 1 bit local SONOS memory cell | |
US7442998B2 (en) | Non-volatile memory device | |
CN110896075B (zh) | 集成电路存储器及其制备方法 | |
KR101847628B1 (ko) | 금속함유 도전 라인을 포함하는 반도체 소자 및 그 제조 방법 | |
CN110098175A (zh) | 半导体器件及其制造方法 | |
KR20110040470A (ko) | 금속 실리사이드층을 포함하는 반도체 소자 | |
US8072018B2 (en) | Semiconductor device and method for fabricating the same | |
TWI582841B (zh) | 製造電晶體閘極之方法及包含電晶體閘極之半導體裝置 | |
JP2000307086A (ja) | 半導体装置及びその製造方法 | |
US6717224B2 (en) | Flash memory cell and method for fabricating a flash | |
US20090072293A1 (en) | Flash Memory and Method for Manufacturing the Same | |
US20070212880A1 (en) | Semiconductor device with charge storage pattern and method for fabricating the same | |
TW202205626A (zh) | 記憶體裝置及其製作方法 | |
US20230084374A1 (en) | Semiconductor device and method for fabricating the same | |
TWI774371B (zh) | 記憶體元件及形成三維記憶體元件的方法 | |
US20230317469A1 (en) | Semiconductor Device and Methods of Forming the Same | |
JP2010129740A (ja) | 不揮発性半導体記憶装置およびその製造方法 | |
US20100270603A1 (en) | Semiconductor device and method of manufacturing the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20091228 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100517 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100812 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100817 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100909 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20101004 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110127 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20110203 |