KR20050099989A - 전자 부품 및 그 제조 방법 - Google Patents
전자 부품 및 그 제조 방법 Download PDFInfo
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- KR20050099989A KR20050099989A KR1020057014373A KR20057014373A KR20050099989A KR 20050099989 A KR20050099989 A KR 20050099989A KR 1020057014373 A KR1020057014373 A KR 1020057014373A KR 20057014373 A KR20057014373 A KR 20057014373A KR 20050099989 A KR20050099989 A KR 20050099989A
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- 238000000034 method Methods 0.000 title claims description 114
- 238000004519 manufacturing process Methods 0.000 title claims description 49
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 115
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 76
- 239000000956 alloy Substances 0.000 claims abstract description 76
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 74
- 239000010948 rhodium Substances 0.000 claims abstract description 44
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 36
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 35
- 229910052702 rhenium Inorganic materials 0.000 claims abstract description 34
- 229910052703 rhodium Inorganic materials 0.000 claims abstract description 32
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 30
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims abstract description 12
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims abstract description 12
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 330
- 239000010408 film Substances 0.000 claims description 105
- 238000010304 firing Methods 0.000 claims description 69
- 239000002245 particle Substances 0.000 claims description 52
- 239000000843 powder Substances 0.000 claims description 52
- 239000010409 thin film Substances 0.000 claims description 49
- 238000004544 sputter deposition Methods 0.000 claims description 34
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 239000012298 atmosphere Substances 0.000 claims description 24
- 238000007639 printing Methods 0.000 claims description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 239000013078 crystal Substances 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 239000011247 coating layer Substances 0.000 claims description 20
- 238000007740 vapor deposition Methods 0.000 claims description 14
- 238000002441 X-ray diffraction Methods 0.000 claims description 11
- 238000010030 laminating Methods 0.000 claims description 2
- 238000010298 pulverizing process Methods 0.000 claims description 2
- 239000003985 ceramic capacitor Substances 0.000 description 28
- 238000000137 annealing Methods 0.000 description 24
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- 229910052726 zirconium Inorganic materials 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
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- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- UYAVFGGVRXRPND-UHFFFAOYSA-N C(C=1C(C(=O)O)=CC=CC1)(=O)OCC(CCCC)CC.C(C=1C(C(=O)O)=CC=CC1)(=O)OCC(CCCC)CC Chemical compound C(C=1C(C(=O)O)=CC=CC1)(=O)OCC(CCCC)CC.C(C=1C(C(=O)O)=CC=CC1)(=O)OCC(CCCC)CC UYAVFGGVRXRPND-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229910002645 Ni-Rh Inorganic materials 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000000608 laser ablation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- 239000003232 water-soluble binding agent Substances 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- HNNQYHFROJDYHQ-UHFFFAOYSA-N 3-(4-ethylcyclohexyl)propanoic acid 3-(3-ethylcyclopentyl)propanoic acid Chemical compound CCC1CCC(CCC(O)=O)C1.CCC1CCC(CCC(O)=O)CC1 HNNQYHFROJDYHQ-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 1
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical group OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 1
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- AOWKSNWVBZGMTJ-UHFFFAOYSA-N calcium titanate Chemical compound [Ca+2].[O-][Ti]([O-])=O AOWKSNWVBZGMTJ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- -1 etc. are used Inorganic materials 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003906 humectant Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000609 methyl cellulose Polymers 0.000 description 1
- 239000001923 methylcellulose Substances 0.000 description 1
- 235000010981 methylcellulose Nutrition 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- DEPMYWCZAIMWCR-UHFFFAOYSA-N nickel ruthenium Chemical compound [Ni].[Ru] DEPMYWCZAIMWCR-UHFFFAOYSA-N 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 150000002843 nonmetals Chemical class 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 235000019422 polyvinyl alcohol Nutrition 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000010405 reoxidation reaction Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000001238 wet grinding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
- H01G4/0085—Fried electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/012—Form of non-self-supporting electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
- H01G4/306—Stacked capacitors made by thin film techniques
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
Claims (21)
- 내부 전극층을 포함하는 소자 본체를 갖는 전자 부품으로서,상기 내부 전극층이, 합금을 포함하고,상기 합금이,니켈(Ni)과,루테늄(Ru), 로듐(Rh), 레늄(Re) 및 백금(Pt)의 군으로부터 선택되는 1종의 원소를 갖고,각 성분의 함유량이,Ni : 80∼100몰%(단, 100몰%는 제외한다),Ru, Rh, Re 및 Pt의 합계 : 0∼20몰%(단, 0몰%는 제외한다)인 전자 부품.
- 제1항에 있어서, 각 성분의 함유량이,Ni : 87∼99.9몰%,Ru, Rh, Re 및 Pt의 합계 : 0.1∼13몰%인, 전자 부품.
- 제1항 또는 제2항에 있어서, 상기 합금이, 로듐(Rh), 레늄(Re) 및 백금(Pt)의 군으로부터 선택되는 적어도 1종의 원소를 갖는, 전자 부품.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 상기 내부 전극층이 합금을 포함하고,상기 합금이, X선 회절 챠트에서, 결정면(111) 면의 회절선의 피크 강도를 I(111)로 하고, 결정면(200) 면의 회절선의 피크 강도를 I(200)로 하고, 결정면(220) 면의 회절선의 피크 강도를 I(220)로 하였을 때, (I(111)/I(200))≥3 및 (I(111)/I(220))≥3의 관계를 만족하는 주면을 갖는, 전자 부품.
- 제1항 내지 제4항 중 어느 한 항에 기재된 전자 부품을 제조하는 방법으로서,박막법에 의해 소정 패턴으로 형성된 내부 전극층용 막을 갖는 그린칩을 소성하여, 상기 소자 본체를 제조하는 것을 특징으로 하는 전자 부품의 제조 방법.
- 제5항에 있어서, 상기 내부 전극층용 막이 10∼100㎚의 결정자 사이즈를 갖는, 전자 부품의 제조 방법.
- 제5항 또는 제6항에 있어서, 상기 내부 전극층용 막을, 스퍼터링법 또는 증착법에 의해 형성하는, 전자 부품의 제조 방법.
- 제1항 내지 제4항 중 어느 한 항에 기재된 전자 부품을 제조하는 방법으로서,평균 입경 0.01∼1㎛의 합금분말을 포함하는 페이스트를 이용하는 인쇄법에 의해 소정 패턴으로 형성된 내부 전극층용 막을 갖는 그린칩을 소성하여, 상기 소자 본체를 제조하는 것을 특징으로 하는 전자 부품의 제조 방법.
- 제8항에 있어서, 상기 합금분말이 10∼100㎚의 결정자 사이즈를 갖는, 전자 부품의 제조 방법.
- 제8항 또는 제9항에 있어서, 상기 합금분말이, 스퍼터링법 또는 증착법에 의해 형성된 합금막을 분쇄하여 얻어지는, 전자 부품의 제조 방법.
- 제1항 내지 제4항 중 어느 한 항에 기재된 전자 부품을 제조하는 방법으로서,도전성 입자를 포함하는 페이스트를 이용하는 인쇄법에 의해 소정 패턴으로 형성된 내부 전극층용 막을 갖는 그린칩을 소성하여, 상기 소자 본체를 제조하고,상기 도전성 입자가,니켈을 주성분으로 하는 코어부와,상기 코어부의 주위의 적어도 일부를 덮고 있는 피복층을 갖는 도전성 입자이고,상기 피복층이, 루테늄(Ru), 로듐(Rh), 레늄(Re) 및 백금(Pt)으로부터 선택되는 적어도 1종의 원소를 주성분으로서 갖는 금속 또는 합금으로 구성되어 있는 전자 부품의 제조 방법.
- 제11항에 있어서, 상기 코어부는, 입자의 대표 길이가 0.01㎛∼1.0㎛의 범위에 있는 구형상, 플레이크형상, 돌기형상 및/또는 부정(不定) 형상의 분말인, 전자 부품의 제조 방법.
- 제11항 또는 제12항에 있어서, 상기 피복층의 두께는, 0.1∼15㎚의 범위에 있는, 전자 부품의 제조 방법.
- 제1항 내지 제4항 중 어느 한 항에 기재된 전자 부품을 제조하는 방법으로서,루테늄(Ru), 로듐(Rh), 레늄(Re) 및 백금(Pt)으로부터 선택되는 적어도 1종의 원소를 갖는 금속층 또는 합금층으로 구성되는 부도전층을 형성하는 공정과,상기 부도전층에 적층시켜, 니켈을 주성분으로 하는 주도전층을 형성하는 공정과,상기 부도전층 및 주도전층을 갖는 내부 전극층용 막을 갖는 그린칩을 소성하는 공정을 갖는 전자 부품의 제조 방법.
- 제14항에 있어서, 상기 주도전층은, 한 쌍의 상기 부도전층의 사이에 끼워져 있고, 상기 내부 전극층이 3층 이상의 적층 구조인, 전자 부품의 제조 방법.
- 제14항 또는 제15항에 있어서, 상기 부도전층의 두께가, 0㎛보다 크고, 0.1㎛ 이하인, 전자 부품의 제조 방법.
- 제14항 내지 제16항 중 어느 한 항에 있어서, 상기 주도전층의 두께가, 0.1∼1.0㎛인, 전자 부품의 제조 방법.
- 제14항 내지 제17항 중 어느 한 항에 있어서, 상기 부도전층은, 박막 형성법에 의해 형성되고, 상기 주도전층은, 인쇄법 또는 박막 형성법에 의해 형성되는 것을 특징으로 하는 전자 부품의 제조 방법.
- 제5항 내지 제18항 중 어느 한 항에 있어서, 상기 그린칩을, 10-10∼10-2㎩의 산소 분압을 갖는 분위기 내에서, 1000∼1300℃의 온도로 소성하는 전자 부품의 제조 방법.
- 제5항 내지 제19항 중 어느 한 항에 있어서, 상기 소자 본체를, 상기 그린칩을 소성하는 공정의 뒤에, 10-2∼100㎩의 산소 분압을 갖는 분위기 내에서, 1200℃ 이하의 온도로 어닐링하는, 전자 부품의 제조 방법.
- 제5항 내지 제20항 중 어느 한 항에 기재된 방법에 의해 형성되는 전자 부품.
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US7518848B2 (en) | 2009-04-14 |
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WO2004070748A1 (ja) | 2004-08-19 |
KR100918346B1 (ko) | 2009-09-22 |
KR20080023762A (ko) | 2008-03-14 |
JP4098329B2 (ja) | 2008-06-11 |
US20060138590A1 (en) | 2006-06-29 |
EP1594146A4 (en) | 2010-01-06 |
EP1594146A1 (en) | 2005-11-09 |
US20080073621A1 (en) | 2008-03-27 |
US7324326B2 (en) | 2008-01-29 |
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