KR20040062566A - 적층 세라믹 축전기 내부 전극용 분말 - Google Patents
적층 세라믹 축전기 내부 전극용 분말 Download PDFInfo
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- KR20040062566A KR20040062566A KR10-2004-7005601A KR20047005601A KR20040062566A KR 20040062566 A KR20040062566 A KR 20040062566A KR 20047005601 A KR20047005601 A KR 20047005601A KR 20040062566 A KR20040062566 A KR 20040062566A
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- Prior art keywords
- alloy
- alloy powder
- weight
- nickel
- copper
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- 239000000843 powder Substances 0.000 title claims abstract description 91
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 8
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 84
- 239000000956 alloy Substances 0.000 claims abstract description 84
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- 239000002245 particle Substances 0.000 claims abstract description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 53
- 239000010949 copper Substances 0.000 claims description 40
- 238000007254 oxidation reaction Methods 0.000 claims description 34
- 230000003647 oxidation Effects 0.000 claims description 30
- 238000005275 alloying Methods 0.000 claims description 26
- 229910052802 copper Inorganic materials 0.000 claims description 24
- 229910052759 nickel Inorganic materials 0.000 claims description 24
- 239000011651 chromium Substances 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 18
- 229910052804 chromium Inorganic materials 0.000 claims description 14
- 239000011135 tin Substances 0.000 claims description 12
- 229910052718 tin Inorganic materials 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 239000010953 base metal Substances 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 239000011572 manganese Substances 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims description 4
- 229910052726 zirconium Inorganic materials 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 3
- XRBURMNBUVEAKD-UHFFFAOYSA-N chromium copper nickel Chemical compound [Cr].[Ni].[Cu] XRBURMNBUVEAKD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052684 Cerium Inorganic materials 0.000 claims description 2
- 229910052790 beryllium Inorganic materials 0.000 claims description 2
- 239000000788 chromium alloy Substances 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 229910000599 Cr alloy Inorganic materials 0.000 claims 1
- 229910000990 Ni alloy Inorganic materials 0.000 claims 1
- VRUVRQYVUDCDMT-UHFFFAOYSA-N [Sn].[Ni].[Cu] Chemical compound [Sn].[Ni].[Cu] VRUVRQYVUDCDMT-UHFFFAOYSA-N 0.000 claims 1
- 239000000203 mixture Substances 0.000 description 17
- 239000003990 capacitor Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- 239000000919 ceramic Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000001301 oxygen Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 8
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 7
- 238000001704 evaporation Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 229910000570 Cupronickel Inorganic materials 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 238000004455 differential thermal analysis Methods 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 239000012159 carrier gas Substances 0.000 description 5
- 239000007772 electrode material Substances 0.000 description 5
- 230000000977 initiatory effect Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002243 precursor Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 238000005245 sintering Methods 0.000 description 5
- 238000009833 condensation Methods 0.000 description 4
- 230000005494 condensation Effects 0.000 description 4
- 239000000110 cooling liquid Substances 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 239000007800 oxidant agent Substances 0.000 description 3
- 230000001590 oxidative effect Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004438 BET method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- HSRJKNPTNIJEKV-UHFFFAOYSA-N Guaifenesin Chemical compound COC1=CC=CC=C1OCC(O)CO HSRJKNPTNIJEKV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 206010067482 No adverse event Diseases 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- YUMTZABMQQKNRL-UHFFFAOYSA-N [Cu][Ni][Sn][Sn] Chemical compound [Cu][Ni][Sn][Sn] YUMTZABMQQKNRL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 150000001805 chlorine compounds Chemical class 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
- H01G4/0085—Fried electrodes
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0433—Nickel- or cobalt-based alloys
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Powder Metallurgy (AREA)
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Conductive Materials (AREA)
Abstract
Description
운전 | 개시 용융물의 조성물 (중량%) |
A | 85 Cu + 15 Sn |
B | 30 Cu + 69 Ni + 1 (Al+Si) |
C | 50 Cu + 50 Ni |
D | 42 Cu + 58 Ni |
E | 95.1 Ni + 4.1 Cr + 0.8 Cu |
F | 87.9 Ni + 11.9 Cr + 0.2 Cu |
G | 73.6 Ni + 26 Cr + 0.4 Cu |
H | 99 Cu + 1 Mn |
J | 91 Ni + 9 Co |
K | 40 Ni + 60 W |
분말 | 조성물 (중량%) | 입자크기 | 산화개시 | ||||||
운전/샘플 | Cu중량% | Sn중량% | Ni중량% | Al중량% | Si1)중량% | Oppm | Cppm | ㎚ | ℃ |
순수 Cu | 100 | -- | -- | -- | -- | 5500 | 150 | 407 | 180 |
100 | -- | -- | -- | -- | 5500 | 150 | 541 | 190 | |
A1 | 89.3 | 10.7 | <0.01 | <9 | 200 | 6100 | 600 | 534 | 2) |
B1 | 82.2 | -- | 15.2 | 560 | 1040 | 8135 | 687 | 193 | 161 |
B2 | 76.8 | -- | 22 | 680 | 2150 | 4984 | 162 | 346 | 168 |
B3 | 73.5 | -- | 25.1 | 730 | 2250 | 5420 | 180 | 424 | 366 |
B4 | 70.2 | -- | 28.3 | 780 | 2350 | 5850 | 197 | 415 | 398 |
B5 | 68.7 | -- | 29.7 | 755 | 1800 | 7080 | 230 | 343 | 371 |
B6 | 67.3 | -- | 31.1 | 730 | 1250 | 8300 | 267 | 273 | 370 |
C1 | 81.2 | -- | 18.5 | 4 | 1700 | 7220 | 200 | 339 | 327 |
D1 | 84.4 | -- | 14.8 | 1 | 1100 | 5620 | 200 | 489 | 331 |
D2 | 83.1 | -- | 16.5 | 6 | 1100 | n/a | n/a | 482 | 343 |
D3 | 80.3 | -- | 18.6 | 2 | 200 | 8490 | 200 | 458 | 344 |
D4 | 80.8 | -- | 18.8 | 8 | 1000 | 6840 | 200 | 545 | 357 |
D5 | 77.3 | -- | 22.3 | 9 | 1400 | n/a | n/a | 541 | 359 |
분말 | 조성물 | 크기 | 산화개시 | |||
운전/샘플 | Ni중량% | Cr중량% | Cu중량% | Oppm | ㎚ | ℃ |
순수Ni | 100 | -- | -- | 2500내지5000 | 300 | 360-380 |
100 | -- | -- | 400 | 380-400 | ||
100 | -- | -- | 500 | 400-420 | ||
100 | -- | -- | 600 | 450-500 | ||
E1 | 90.2 | 6.1 | 3.7 | n/a | 396 | 531 |
E2 | 88.4 | 6.3 | 4.6 | 4710 | 464 | 534 |
E3 | 90.3 | 6.7 | 2.4 | 4920 | 462 | 522 |
F1 | 86.9 | 10.9 | 0.6 | n/a | 436 | 528 |
F2 | 88 | 11 | 0.5 | n/a | 626 | 551 |
G1 | 63.6 | 35.7 | 0.35 | 8780 | 606 | >580 |
G2 | 61.5 | 37.3 | 0.8 | 9130 | 508 | 565 |
G3 | 58.4 | 39.4 | 1.66 | 12120 | 295 | 568 |
분말 | 조성물 | 크기 | 산화개시 | |||||
운전/샘플 | Ni중량% | Cu중량% | Mn중량% | Co중량% | W중량% | Oppm | ㎚ | ℃ |
H1 | -- | 88.7 | 10.9 | -- | -- | 7840 | 486 | 388 |
J1 | 87.8 | -- | -- | 11.2 | -- | 5180 | 510 | 568 |
K1 | 89.7 | -- | -- | -- | 9.6 | 6330 | 473 | 487 |
분말 | 입자 크기 | 소결 개시 | 소결 종결 | 상대 길이 변화 |
순수 구리 | 418㎚ | 250℃ | 850℃ | 21.0% |
구리 니켈 합금(15% Ni) | 489㎚ | 550-650℃ | 850℃ | 19.3% |
구리 니켈 합금(30% Ni) | 343㎚ | 500-600℃ | 900-950℃ | 17.7% |
Claims (20)
- Ni, Cu, Cr, Sn, Mn, Co 및 W로 이루어진 군으로부터 선택된 적어도 2개의 합금 원소를 포함하는 합금을 포함하며, 상기 원소들을 다음의 함량으로 갖는 것을 특징으로 하는 베이스 금속 합금 분말:1 내지 99중량%의 Ni,1 내지 99중량%의 Cu,6 내지 60중량%의 Cr,6 내지 15중량%의 Sn,6 내지 15중량%의 Mn,6 내지 15중량%의 Co, 및6 내지 15중량%의 W
- 제1항에 있어서, 상기 합금은 Ag, Al, Au, B, Be, Ca, Ce, Co, Cr, Cu, Fe, Ge, Hf, Mg, La, Nb, Ni, Mn, Mo, Si, Sn, P, Pd, Pt, Ta, Ti, V, W, Y, Zn 및 Zr로 이루어진 군으로부터 선택된 적어도 하나의 원소를 전체 금속의 중량에 기초하여 0.1 내지 20중량%를 더욱 포함하는 것을 특징으로 하는 합금 분말.
- 제2항에 있어서, 상기 합금은 적어도 2개의 상기 부가 원소를 더욱 포함하는 것을 특징으로 하는 합금 분말.
- 제2항에 있어서, 상기 합금내의 부가 원소의 함량은 6중량% 이상인 것을 특징으로 하는 합금 분말.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 합금은 6 내지 40중량%의 크롬을 포함하는 니켈-크롬 합금인 것을 특징으로 하는 합금 분말.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 합금은 0.2 내지 30중량%의 구리를 포함하는 니켈-구리-크롬 합금인 것을 특징으로 하는 합금 분말.
- 제6항에 있어서, 상기 합금은 0.2 내지 30중량%의 크롬을 포함하는 것을 특징으로 하는 합금 분말.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 합금은 0.2 내지 30중량%의 니켈을 포함하는 구리-니켈-크롬 합금인 것을 특징으로 하는 합금 분말.
- 제8항에 있어서, 상기 합금은 0.2 내지 30중량%의 크롬을 포함하는 것을 특징으로 하는 합금 분말.
- 제1항 내지 제4항 중 어느 한 항에 있어서, 상기 합금은 1 내지 30중량%의니켈을 포함하는 구리-주석-니켈 합금인 것을 특징으로 하는 합금 분말.
- 제1항 내지 제4항 및 제8항 내지 제10항 중 어느 한 항에 있어서, 상기 합금은 적어도 60중량%의 구리를 포함하는 것을 특징으로 하는 합금 분말.
- 제1항 내지 제7항 중 어느 한 항에 있어서, 상기 합금은 적어도 60중량%의 니켈을 포함하는 것을 특징으로 하는 합금 분말.
- 제1항 내지 제12항 중 어느 한 항에 있어서, 상기 합금 분말은 25㎚ 내지 700㎚의 평균 입경을 갖는 것을 특징으로 하는 합금 분말.
- 제13항에 있어서, 상기 합금 분말은 100㎚ 내지 700㎚의 평균 입경을 갖는 것을 특징으로 하는 합금 분말.
- 제1항 내지 제14항 중 어느 한 항에 있어서, 상기 합금 분말은 실질적으로 구형의 형상을 갖는 것을 특징으로 하는 합금 분말.
- 제1항에 있어서, 상기 합금 분말은 산화 개시 온도가 적어도 250℃인 구리 및 적어도 하나의 합금 원소를 포함하는 것을 특징으로 하는 합금 분말.
- 제16항에 있어서, 상기 합금 분말은 산화 개시 온도가 325℃ 내지 400℃인 구리 및 적어도 하나의 합금 원소를 포함하는 것을 특징으로 하는 합금 분말.
- 제1항에 있어서, 상기 합금 분말은 산화 개시 온도가 적어도 500℃인 니켈 및 적어도 하나의 합금 원소를 포함하는 것을 특징으로 하는 합금 분말.
- 제18항에 있어서, 상기 산화 개시 온도는 520℃ 내지 600℃인 것을 특징으로 하는 합금 분말.
- 제1항 내지 제19항 중 어느 한 항에 따른 합금 분말로부터 제조된 내부 전극을 포함하는 적층 세라믹 축전기.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002359347A CA2359347A1 (en) | 2001-10-18 | 2001-10-18 | Laminated ceramic capacitor internal electrode material |
CA2,359,347 | 2001-10-18 | ||
PCT/CA2002/001585 WO2003033752A1 (en) | 2001-10-18 | 2002-10-18 | Powder for laminated ceramic capacitor internal electrode |
Publications (2)
Publication Number | Publication Date |
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KR20040062566A true KR20040062566A (ko) | 2004-07-07 |
KR100950127B1 KR100950127B1 (ko) | 2010-03-30 |
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KR1020047005601A KR100950127B1 (ko) | 2001-10-18 | 2002-10-18 | 적층 세라믹 축전기 내부 전극용 분말 |
Country Status (9)
Country | Link |
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US (2) | US7277268B2 (ko) |
EP (2) | EP1451381B1 (ko) |
JP (1) | JP2005505695A (ko) |
KR (1) | KR100950127B1 (ko) |
CN (1) | CN1324154C (ko) |
AT (2) | ATE468414T1 (ko) |
CA (3) | CA2359347A1 (ko) |
DE (2) | DE60226169T2 (ko) |
WO (1) | WO2003033752A1 (ko) |
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-
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- 2002-10-18 KR KR1020047005601A patent/KR100950127B1/ko active IP Right Grant
- 2002-10-18 AT AT08005728T patent/ATE468414T1/de active
- 2002-10-18 AT AT02801272T patent/ATE392488T1/de active
- 2002-10-18 DE DE60226169T patent/DE60226169T2/de not_active Expired - Lifetime
- 2002-10-18 CA CA2463926A patent/CA2463926C/en not_active Expired - Lifetime
- 2002-10-18 DE DE60236469T patent/DE60236469D1/de not_active Expired - Lifetime
- 2002-10-18 WO PCT/CA2002/001585 patent/WO2003033752A1/en active IP Right Grant
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- 2002-10-18 CN CNB028207815A patent/CN1324154C/zh not_active Expired - Lifetime
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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KR100790435B1 (ko) * | 2005-07-29 | 2008-01-02 | 스미토모 긴조쿠 고잔 가부시키가이샤 | 적층 세라믹 콘덴서 내부 전극용 니켈 분말 및 이 니켈분말로 이루어진 적층 세라믹 콘덴서 |
US11488782B2 (en) | 2019-07-25 | 2022-11-01 | Samsung Electro-Mechanics Co., Ltd. | Multilayer ceramic electronic component and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US7277268B2 (en) | 2007-10-02 |
JP2005505695A (ja) | 2005-02-24 |
EP1451381A1 (en) | 2004-09-01 |
WO2003033752A1 (en) | 2003-04-24 |
US20080055818A1 (en) | 2008-03-06 |
ATE468414T1 (de) | 2010-06-15 |
EP1956103B1 (en) | 2010-05-19 |
DE60236469D1 (de) | 2010-07-01 |
CA2756150C (en) | 2013-04-02 |
CA2756150A1 (en) | 2003-04-24 |
US20040256603A1 (en) | 2004-12-23 |
EP1956103B8 (en) | 2010-12-15 |
EP1451381B1 (en) | 2008-04-16 |
ATE392488T1 (de) | 2008-05-15 |
KR100950127B1 (ko) | 2010-03-30 |
DE60226169T2 (de) | 2009-05-07 |
CN1571855A (zh) | 2005-01-26 |
EP1956103A1 (en) | 2008-08-13 |
CA2463926A1 (en) | 2003-04-24 |
CA2359347A1 (en) | 2003-04-18 |
CA2463926C (en) | 2011-12-20 |
CN1324154C (zh) | 2007-07-04 |
US7857886B2 (en) | 2010-12-28 |
DE60226169D1 (de) | 2008-05-29 |
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