JP2005097716A - 銅合金粉末及びその製造方法、並びに、耐酸化性に優れた導電性ペースト用銅合金粉末及びその製造方法 - Google Patents
銅合金粉末及びその製造方法、並びに、耐酸化性に優れた導電性ペースト用銅合金粉末及びその製造方法 Download PDFInfo
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- 239000000843 powder Substances 0.000 title claims abstract description 82
- 229910000881 Cu alloy Inorganic materials 0.000 title claims abstract description 65
- 230000003647 oxidation Effects 0.000 title claims abstract description 44
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 44
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052709 silver Inorganic materials 0.000 claims abstract description 58
- 239000004332 silver Substances 0.000 claims abstract description 58
- 239000002245 particle Substances 0.000 claims abstract description 39
- 238000006243 chemical reaction Methods 0.000 claims abstract description 30
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000010949 copper Substances 0.000 claims abstract description 25
- 229910052802 copper Inorganic materials 0.000 claims abstract description 22
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical class [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 claims abstract description 19
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 18
- 239000000956 alloy Substances 0.000 claims abstract description 18
- 239000012159 carrier gas Substances 0.000 claims abstract description 14
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical class Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims abstract description 11
- 239000012298 atmosphere Substances 0.000 claims abstract description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 21
- 229910052717 sulfur Inorganic materials 0.000 claims description 19
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 18
- 229910021607 Silver chloride Inorganic materials 0.000 claims description 18
- 239000011733 molybdenum Substances 0.000 claims description 18
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 16
- 239000011593 sulfur Substances 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 15
- 239000002344 surface layer Substances 0.000 claims description 15
- 238000010574 gas phase reaction Methods 0.000 claims 2
- 239000002994 raw material Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 10
- 239000003985 ceramic capacitor Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 8
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 8
- 230000008569 process Effects 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 5
- 238000010304 firing Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000006722 reduction reaction Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 238000004438 BET method Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052946 acanthite Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- XUARKZBEFFVFRG-UHFFFAOYSA-N silver sulfide Chemical compound [S-2].[Ag+].[Ag+] XUARKZBEFFVFRG-UHFFFAOYSA-N 0.000 description 1
- 229940056910 silver sulfide Drugs 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
- Ceramic Capacitors (AREA)
Abstract
【解決手段】銅を主体とし、銀を0.1〜30原子%含有し、平均粒径が0.1〜2μmである銅合金粉末は銀が粒の表面近傍に偏析し、耐酸化性に優れた導電性ペースト用銅合金粉末である。この粉末は銅の塩化物21及び銀の塩化物又は銀22を反応容器11内に装入し、高温雰囲気に保持しつつキャリアガス13及び還元ガス12を送入して合金粉生成域15で化学気相反応させ、生成することができる。
【選択図】 図1
Description
図1に示すような実験室規模の化学気相反応装置10を用いて本発明の銅合金粉末を製造した。
11 反応容器
12 還元ガス
13 キャリアガス
14 排出路
15 合金粉生成域
21 銅の塩化物
22 銀の塩化物又は銀
23、24 原料収納ボート
30 化学気相反応(CVD)装置
31 反応容器
Claims (9)
- 銅を主体とし、銀を0.1〜30原子%含有し、モリブデン及び硫黄の1種以上を合計で0.005〜5原子%含有することを特徴とする銅合金粉末。
- 平均粒径が0.1〜2μmであることを特徴とする請求項1記載の銅合金粉末。
- 前記銅合金粉末の粒子表層近傍の銀濃度が、平均の銀濃度より高い濃度を有することを特徴とする請求項1又は2記載の銅合金粉末。
- 請求項3記載の銅合金粉末において、銅と銀の合計量が90原子%以上であることを特徴とする耐酸化性に優れた導電性ペースト用合金粉末。
- 請求項4記載の耐酸化性に優れた導電性ペースト用合金粉末を生成するに当り、銅の塩化物及び銀もしくは銀の塩化物を反応容器に装入し、高温雰囲気に保持しつつキャリアガスおよび還元ガスを装入して化学気相反応させることを特徴とする耐酸化性に優れた導電性ペースト用銅合金粉末の製造方法。
- 平均粒径が0.01〜0.1μm未満であることを特徴とする請求項1記載の銅合金粉末。
- 前記銅合金粉末の粒子表層近傍の銀濃度が、平均の銀濃度より高い濃度を有することを特徴とする請求項6記載の銅合金粉末。
- 請求項7記載の銅合金粉末において、銅と銀の合計量が90原子%以上であることを特徴とする銅合金粉末。
- 請求項8記載の銅合金粉末を生成するに当り、銅の塩化物及び銀もしくは銀の塩化物を反応容器に装入し、高温雰囲気に保持しつつキャリアガスおよび還元ガスを装入して化学気相反応させることを特徴とする銅合金粉末の製造方法。
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JP2003421102A JP4085049B2 (ja) | 2003-08-21 | 2003-12-18 | 導電性ペースト用銅合金粉末及び耐酸化性に優れた導電性ペースト用銅合金粉末の製造方法、並びにインクジェット用銅合金粉末及びその製造方法 |
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JP2003421102A JP4085049B2 (ja) | 2003-08-21 | 2003-12-18 | 導電性ペースト用銅合金粉末及び耐酸化性に優れた導電性ペースト用銅合金粉末の製造方法、並びにインクジェット用銅合金粉末及びその製造方法 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010053409A (ja) * | 2008-08-28 | 2010-03-11 | Sumitomo Electric Ind Ltd | 金属粉末の製造方法および金属粉末、導電性ペースト、積層セラミックコンデンサ |
JP2010077495A (ja) * | 2008-09-26 | 2010-04-08 | Sumitomo Metal Mining Co Ltd | 銀被覆銅微粒子とその分散液及びその製造方法 |
JP2011151089A (ja) * | 2010-01-19 | 2011-08-04 | Namics Corp | 積層セラミック電子部品とその製造方法 |
JP2013057128A (ja) * | 2007-06-28 | 2013-03-28 | Jx Nippon Mining & Metals Corp | 球状銅微粉及びその製造方法 |
JP2013067865A (ja) * | 2012-11-12 | 2013-04-18 | Sumitomo Electric Ind Ltd | 金属粉末、導電性ペースト及び積層セラミックコンデンサ |
JP2013079448A (ja) * | 2012-11-08 | 2013-05-02 | Sumitomo Metal Mining Co Ltd | 銀被覆銅微粒子とその分散液及びその製造方法 |
JP7490528B2 (ja) | 2020-01-10 | 2024-05-27 | 東邦チタニウム株式会社 | 銅粉体 |
-
2003
- 2003-12-18 JP JP2003421102A patent/JP4085049B2/ja not_active Expired - Fee Related
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013057128A (ja) * | 2007-06-28 | 2013-03-28 | Jx Nippon Mining & Metals Corp | 球状銅微粉及びその製造方法 |
JP2010053409A (ja) * | 2008-08-28 | 2010-03-11 | Sumitomo Electric Ind Ltd | 金属粉末の製造方法および金属粉末、導電性ペースト、積層セラミックコンデンサ |
JP2010077495A (ja) * | 2008-09-26 | 2010-04-08 | Sumitomo Metal Mining Co Ltd | 銀被覆銅微粒子とその分散液及びその製造方法 |
JP2011151089A (ja) * | 2010-01-19 | 2011-08-04 | Namics Corp | 積層セラミック電子部品とその製造方法 |
JP2013079448A (ja) * | 2012-11-08 | 2013-05-02 | Sumitomo Metal Mining Co Ltd | 銀被覆銅微粒子とその分散液及びその製造方法 |
JP2013067865A (ja) * | 2012-11-12 | 2013-04-18 | Sumitomo Electric Ind Ltd | 金属粉末、導電性ペースト及び積層セラミックコンデンサ |
JP7490528B2 (ja) | 2020-01-10 | 2024-05-27 | 東邦チタニウム株式会社 | 銅粉体 |
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