KR20010062019A - 반도체 레이저 장치, 그의 제조방법 및 반도체 레이저장치를 사용한 광 픽업 - Google Patents
반도체 레이저 장치, 그의 제조방법 및 반도체 레이저장치를 사용한 광 픽업 Download PDFInfo
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- KR20010062019A KR20010062019A KR1020000071948A KR20000071948A KR20010062019A KR 20010062019 A KR20010062019 A KR 20010062019A KR 1020000071948 A KR1020000071948 A KR 1020000071948A KR 20000071948 A KR20000071948 A KR 20000071948A KR 20010062019 A KR20010062019 A KR 20010062019A
- Authority
- KR
- South Korea
- Prior art keywords
- semiconductor laser
- die bonding
- laser device
- stem
- laser chip
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0236—Fixing laser chips on mounts using an adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02375—Positioning of the laser chips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/02—ASE (amplified spontaneous emission), noise; Reduction thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Die Bonding (AREA)
- Optical Head (AREA)
Abstract
Description
Claims (6)
- 반도체의 발광점을 막지 않도록 주 출사측상의 발광점이 위치하는 반도체 레이저 칩의 단면이 스템 헤더부의 일단 또는 스템상에 배치된 서브마운트 헤더부의 일단으로 부터 돌출되게 위치하도록 스템상에 베치된 반도체 레이저 칩을 포함하고,반도체 레이저 칩의 다이 본딩용 접착제로서 도전성 다이 본딩 페이스트를 사용하는 것을 특징으로 하는 반도체 레이저 장치.
- 제1항에 있어서, 상기 스템 헤더부의 일단 또는 상기 서브마운트 헤더부의 일단으로 부터 돌출되도록 배치된 상기 반도체 레이저 칩의 이면에 상기 도전성 다이 본딩 페이스트가 배치되어 있는 것을 특징으로 하는 반도체 레이저 장치.
- 제1항에 있어서, 상기 스템의 헤더부의 일단 또는 스템상에 배치된 서브마운트 헤더부의 일단에 면둥글림 가공부 또는 코너곡면 가공부가 형성된 것을 특징으로 하는 반도체 레이저 장치.
- 제1항에 있어서, 상기 반도체 레이저 칩의 발광점이 반도체 레이저 칩의 다이 본딩 면으로부터 약 0.03 mm 이상 높게 위치하는 것을 특징으로 하는 반도체 레이저 장치.
- 제1항에 청구된 반도체 레이저 장치;회절 격자; 및광검출기를 포함하는 광픽업.
- 도전성 다이 본딩 페이스트가 디스펜서의 시린지 침 선단으로부터 사출되어 도포될 때 시린지 침 선단이 스템 헤더부의 일단 또는 스템상에 배치된 서브마운트헤더부의 일단으로부터 부분적으로 돌출하는 위치에 있도록 시린지 침을 배치하는 단계를 포함하는 제1항에 청구된 반도체 레이저 장치의 제조방법.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11-341653 | 1999-12-01 | ||
JP34165399 | 1999-12-01 | ||
JP2000281724A JP4050865B2 (ja) | 1999-12-01 | 2000-09-18 | 半導体レーザ装置及びその製造方法及びそれを用いた光ピックアップ |
JP2000-281724 | 2000-09-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20010062019A true KR20010062019A (ko) | 2001-07-07 |
KR100446714B1 KR100446714B1 (ko) | 2004-09-01 |
Family
ID=26577015
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2000-0071948A KR100446714B1 (ko) | 1999-12-01 | 2000-11-30 | 반도체 레이저 장치, 그의 제조방법 및 반도체 레이저장치를 사용한 광 픽업 |
Country Status (5)
Country | Link |
---|---|
US (2) | US6700911B2 (ko) |
JP (1) | JP4050865B2 (ko) |
KR (1) | KR100446714B1 (ko) |
CN (1) | CN1180519C (ko) |
TW (1) | TW486847B (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3825948B2 (ja) * | 2000-02-07 | 2006-09-27 | シャープ株式会社 | 半導体レーザ装置の製造方法 |
US6967979B2 (en) * | 2000-10-06 | 2005-11-22 | Sharp Kabushiki Kaisha | Semiconductor laser device, optical pickup and fabrication method of semiconductor laser device |
JP4350382B2 (ja) * | 2003-01-06 | 2009-10-21 | 三菱電機株式会社 | 半導体レーザ装置及びその製造方法 |
KR100575969B1 (ko) * | 2003-11-14 | 2006-05-02 | 삼성전자주식회사 | 티오-캔 구조의 광 모듈 |
US20070137836A1 (en) * | 2005-12-19 | 2007-06-21 | Qnx Cooling Systems, Inc. | Heat transfer system |
JP5352214B2 (ja) * | 2008-12-10 | 2013-11-27 | シャープ株式会社 | 発光素子、チップ及び発光素子の製造方法 |
JP2013197445A (ja) * | 2012-03-22 | 2013-09-30 | Seiko Epson Corp | 半導体光源、投影表示装置及び半導体光源の製造方法 |
JPWO2013150715A1 (ja) | 2012-04-05 | 2015-12-17 | パナソニックIpマネジメント株式会社 | 半導体レーザ装置およびその製造方法 |
DE102013223115A1 (de) * | 2013-11-13 | 2015-05-28 | Osram Opto Semiconductors Gmbh | Laserbauelement und Verfahren zu seiner Herstellung |
US10163674B2 (en) | 2014-11-27 | 2018-12-25 | National Institute Of Advanced Industrial Science And Technology | Circular support substrate for semiconductor |
DE102015116092B4 (de) | 2015-09-23 | 2018-06-14 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements |
JP2019029394A (ja) | 2017-07-26 | 2019-02-21 | 住友電気工業株式会社 | キャリア実装構造 |
CN107329144A (zh) * | 2017-08-16 | 2017-11-07 | 深圳市杰普特光电股份有限公司 | 一种微型激光测距模块及测距装置 |
CN112103766A (zh) * | 2020-08-13 | 2020-12-18 | 长春理工大学 | 一种用于半导体激光器封装的过渡热沉结构及其使用方法 |
CN115632304A (zh) * | 2022-09-30 | 2023-01-20 | 青岛海信激光显示股份有限公司 | 发光芯片和激光器 |
Family Cites Families (21)
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JPS6063981A (ja) | 1984-07-27 | 1985-04-12 | Hitachi Ltd | 半導体発光装置 |
JPH0746747B2 (ja) | 1986-09-09 | 1995-05-17 | 松下電器産業株式会社 | 半導体レーザのボンディング方法 |
JPS63138794A (ja) * | 1986-12-01 | 1988-06-10 | Seiko Epson Corp | 半導体レ−ザ素子ダイボンデイング方法 |
JPH0286184A (ja) | 1988-09-22 | 1990-03-27 | Hitachi Ltd | 光電子装置 |
JPH02271586A (ja) * | 1989-04-12 | 1990-11-06 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JPH03106089A (ja) | 1989-09-20 | 1991-05-02 | Fuji Electric Co Ltd | 半導体レーザ素子 |
JPH03274781A (ja) * | 1990-03-23 | 1991-12-05 | Rohm Co Ltd | レーザダイオード |
JPH0430588A (ja) * | 1990-05-28 | 1992-02-03 | Fuji Electric Co Ltd | 半導体レーザ素子放熱体のサブマウント |
KR940002415B1 (ko) * | 1990-11-30 | 1994-03-24 | 금성기전 주식회사 | 레이저 다이오드의 제조방법 |
JPH05291696A (ja) | 1992-04-08 | 1993-11-05 | Sharp Corp | 半導体レーザ素子およびその作製方法 |
JPH0637403A (ja) | 1992-07-14 | 1994-02-10 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JPH0818150A (ja) * | 1994-06-29 | 1996-01-19 | Rohm Co Ltd | 半導体レーザの製造方法 |
TW340132B (en) | 1994-10-20 | 1998-09-11 | Ibm | Structure for use as an electrical interconnection means and process for preparing the same |
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JP3311933B2 (ja) * | 1996-07-03 | 2002-08-05 | シャープ株式会社 | 半導体レーザ装置及びその製造方法 |
JPH11163419A (ja) * | 1997-11-26 | 1999-06-18 | Rohm Co Ltd | 発光装置 |
JPH11284098A (ja) * | 1998-03-31 | 1999-10-15 | Sharp Corp | 半導体レーザ装置 |
US6188062B1 (en) * | 1998-04-08 | 2001-02-13 | Hoetron, Inc. | Laser/detector hybrid with integrated mirror and diffracted returned beam |
-
2000
- 2000-09-18 JP JP2000281724A patent/JP4050865B2/ja not_active Expired - Lifetime
- 2000-11-29 TW TW089125327A patent/TW486847B/zh not_active IP Right Cessation
- 2000-11-30 KR KR10-2000-0071948A patent/KR100446714B1/ko active IP Right Grant
- 2000-11-30 US US09/725,513 patent/US6700911B2/en not_active Expired - Lifetime
- 2000-12-01 CN CNB001373048A patent/CN1180519C/zh not_active Expired - Fee Related
-
2003
- 2003-09-05 US US10/655,044 patent/US6972205B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CN1299171A (zh) | 2001-06-13 |
US20010002916A1 (en) | 2001-06-07 |
US20040053430A1 (en) | 2004-03-18 |
US6972205B2 (en) | 2005-12-06 |
TW486847B (en) | 2002-05-11 |
JP2001223425A (ja) | 2001-08-17 |
JP4050865B2 (ja) | 2008-02-20 |
CN1180519C (zh) | 2004-12-15 |
US6700911B2 (en) | 2004-03-02 |
KR100446714B1 (ko) | 2004-09-01 |
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