KR101020146B1 - 반도체 레이저 - Google Patents
반도체 레이저 Download PDFInfo
- Publication number
- KR101020146B1 KR101020146B1 KR1020040079702A KR20040079702A KR101020146B1 KR 101020146 B1 KR101020146 B1 KR 101020146B1 KR 1020040079702 A KR1020040079702 A KR 1020040079702A KR 20040079702 A KR20040079702 A KR 20040079702A KR 101020146 B1 KR101020146 B1 KR 101020146B1
- Authority
- KR
- South Korea
- Prior art keywords
- die pad
- semiconductor laser
- resin
- shape
- base portion
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0232—Lead-frames
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/0231—Stems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Optical Head (AREA)
Abstract
Description
Claims (8)
- 판 형상의 리드 프레임으로부터 형성된 다이 패드 및 복수의 리드;그 다이 패드 및 복수의 리드를 일체로 유지하는 몰드 수지로 이루어진 수지부; 및상기 다이 패드의 일면측에 탑재되는 레이저칩을 구비하며,상기 수지부는, 상기 복수의 리드를 일체로 유지하며, 외형이 원 형상인 베이스부와, 그 베이스부의 윗쪽에 연속하여 형성되고, 상기 다이 패드의 이면과 측부를 유지하며, 외형이 상기 베이스부의 원형인 외직경보다 작은 원형 안에 수납된 형상으로 형성된 다이 패드 유지부에 의해 형성되어 이루어진 반도체 레이저.
- 제 1 항에 있어서,상기 수지부는, 상기 리드 프레임의 일면을 파팅 라인(parting line)으로 하여 틀 성형으로 형성되고, 상기 베이스부의 상기 다이 패드 유지부가 형성되지 않고 노출한 상면이 상기 다이 패드의 표면측과 이면측에서, 상기 파팅 라인을 경계로 하여 단차(段差)를 갖도록 형성되어 이루어진 반도체 레이저.
- 제 2 항에 있어서,상기 파팅 라인을 경계로 하여 단차를 갖는 상기 베이스부의 노출면 중, 그 노출하는 상면이 높은 측의 상기 베이스부의 상면만이, 상기 레이저칩을 탑재할 때와 픽업에 장착할 때 중 적어도 어느 하나일 때의 위치 결정 기준으로 되는 반도체 레이저.
- 제 3 항에 있어서,상기 파팅 라인이 상기 리드 프레임의 이면에 형성되고, 상기 리드 프레임의 표면측의 상기 베이스부 상면이 상기 위치 결정 기준으로 되는 반도체 레이저.
- 제 1 항에 있어서,상기 다이 패드 유지부가, 상기 다이 패드 이면의 측면이 평탄하게 형성되고, 상면에서 본 평면 형상이 상기 다이 패드의 부분을 움푹 들어간 부분으로 하는 오목형 형상으로 형성되어 이루어진 반도체 레이저.
- 제 1 항에 있어서,상기 베이스부의 외주(外周)에는, 위치 맞춤용 노치(Notch)부가 형성되어 이루어진 반도체 레이저.
- 제 1 항에 있어서,상기 복수의 리드 및 다이 패드의 표면이 은 도금 또는 Ni/Pd/Au 3 층의 도금이 실시되고, 상기 수지부가 슈퍼 엔지니어링 플라스틱에 의해 형성되어 이루어진 반도체 레이저.
- 제 7 항에 있어서,상기 슈퍼 엔지니어링 플라스틱이 폴리프탈아미드, 폴리아미드(PA) 또는 액정 폴리머로 이루어진 반도체 레이저.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2003-00347333 | 2003-10-06 | ||
JP2003347333A JP3802896B2 (ja) | 2003-10-06 | 2003-10-06 | 半導体レーザ |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050033497A KR20050033497A (ko) | 2005-04-12 |
KR101020146B1 true KR101020146B1 (ko) | 2011-03-08 |
Family
ID=34386404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040079702A KR101020146B1 (ko) | 2003-10-06 | 2004-10-06 | 반도체 레이저 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7075178B2 (ko) |
JP (1) | JP3802896B2 (ko) |
KR (1) | KR101020146B1 (ko) |
CN (1) | CN100367585C (ko) |
TW (1) | TWI365581B (ko) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7501011B2 (en) | 2004-11-09 | 2009-03-10 | Multisorb Technologies, Inc. | Humidity control device |
KR100576881B1 (ko) * | 2005-01-03 | 2006-05-10 | 삼성전기주식회사 | 반도체 레이저 다이오드장치 및 그 제조방법 |
US20070096132A1 (en) * | 2005-11-01 | 2007-05-03 | Jiahn-Chang Wu | Coaxial LED lighting board |
JP4786350B2 (ja) * | 2006-01-19 | 2011-10-05 | シャープ株式会社 | 半導体レーザ装置および光ピックアップ装置 |
JP4970924B2 (ja) * | 2006-03-28 | 2012-07-11 | 三菱電機株式会社 | 光素子用パッケージとこれを用いた光半導体装置 |
JP4816397B2 (ja) * | 2006-10-12 | 2011-11-16 | 住友電気工業株式会社 | 光電変換モジュール |
TW200832851A (en) * | 2007-01-29 | 2008-08-01 | Truelight Corp | Package structure for horizontal cavity surface-emitting laser diode with light monitoring function |
JP2009152330A (ja) * | 2007-12-20 | 2009-07-09 | Panasonic Corp | 半導体装置、半導体装置の製造方法、半導体装置の製造装置および光ピックアップ装置ならびに光ディスクドライブ装置 |
JP2009200463A (ja) * | 2008-01-23 | 2009-09-03 | Panasonic Corp | 半導体装置 |
US8057586B2 (en) | 2008-07-28 | 2011-11-15 | Multisorb Technologies, Inc. | Humidity control for product in a refrigerator |
JP2010074142A (ja) * | 2008-08-20 | 2010-04-02 | Panasonic Corp | 半導体装置及びそれを用いた電子機器 |
JP5244515B2 (ja) | 2008-09-17 | 2013-07-24 | ローム株式会社 | 半導体レーザ装置 |
JP5391753B2 (ja) * | 2009-03-16 | 2014-01-15 | 株式会社リコー | 光源ユニット・光源装置・光走査装置および画像形成装置 |
DE102010046090A1 (de) * | 2010-09-20 | 2012-03-22 | Osram Opto Semiconductors Gmbh | Gehäuse für ein optoelektronisches Halbleiterbauelement und Halbleiterbauelement |
DE102010046088A1 (de) | 2010-09-20 | 2012-03-22 | Osram Opto Semiconductors Gmbh | Gehäuse und Verfahren zum Herstellen eines Gehäuses |
CN102117792A (zh) * | 2011-01-05 | 2011-07-06 | 无锡市玉祁红光电子有限公司 | 三端稳压器框架镀层结构 |
CN103907249B (zh) * | 2011-11-30 | 2015-02-25 | 松下电器产业株式会社 | 氮化物半导体发光装置 |
JP2014138046A (ja) * | 2013-01-16 | 2014-07-28 | Stanley Electric Co Ltd | 半導体発光素子パッケージ固定構造 |
US9300112B2 (en) * | 2013-12-18 | 2016-03-29 | Lumentum Operations Llc | Packaged laser diode and method of packaging a laser diode |
WO2020071168A1 (ja) | 2018-10-01 | 2020-04-09 | ローム株式会社 | 半導体レーザ装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000357839A (ja) | 1999-06-16 | 2000-12-26 | Sanyo Electric Co Ltd | レーザ装置 |
JP2002176222A (ja) | 2000-12-07 | 2002-06-21 | Sharp Corp | 半導体レーザ装置 |
JP2002368323A (ja) | 2001-06-06 | 2002-12-20 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3082695B2 (ja) * | 1997-01-16 | 2000-08-28 | 日本電気株式会社 | 半導体レーザ装置、その製造方法 |
JP3385238B2 (ja) | 1999-01-12 | 2003-03-10 | シャープ株式会社 | 光送受信モジュール |
JP2001111152A (ja) | 1999-10-06 | 2001-04-20 | Rohm Co Ltd | 半導体レーザ |
JP3698243B2 (ja) | 1999-10-06 | 2005-09-21 | シャープ株式会社 | 半導体レーザ装置 |
JP3987716B2 (ja) * | 2001-12-10 | 2007-10-10 | シャープ株式会社 | 半導体レーザ装置およびその製造方法 |
-
2003
- 2003-10-06 JP JP2003347333A patent/JP3802896B2/ja not_active Expired - Fee Related
-
2004
- 2004-09-24 CN CNB2004101038572A patent/CN100367585C/zh not_active Expired - Fee Related
- 2004-10-01 TW TW093129817A patent/TWI365581B/zh not_active IP Right Cessation
- 2004-10-04 US US10/956,034 patent/US7075178B2/en not_active Expired - Lifetime
- 2004-10-06 KR KR1020040079702A patent/KR101020146B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000357839A (ja) | 1999-06-16 | 2000-12-26 | Sanyo Electric Co Ltd | レーザ装置 |
JP2002176222A (ja) | 2000-12-07 | 2002-06-21 | Sharp Corp | 半導体レーザ装置 |
JP2002368323A (ja) | 2001-06-06 | 2002-12-20 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
Also Published As
Publication number | Publication date |
---|---|
CN1619901A (zh) | 2005-05-25 |
KR20050033497A (ko) | 2005-04-12 |
US7075178B2 (en) | 2006-07-11 |
CN100367585C (zh) | 2008-02-06 |
JP2005116700A (ja) | 2005-04-28 |
US20050072985A1 (en) | 2005-04-07 |
TWI365581B (en) | 2012-06-01 |
TW200516816A (en) | 2005-05-16 |
JP3802896B2 (ja) | 2006-07-26 |
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