KR20010024730A - 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장 - Google Patents

고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장 Download PDF

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Publication number
KR20010024730A
KR20010024730A KR1020007006611A KR20007006611A KR20010024730A KR 20010024730 A KR20010024730 A KR 20010024730A KR 1020007006611 A KR1020007006611 A KR 1020007006611A KR 20007006611 A KR20007006611 A KR 20007006611A KR 20010024730 A KR20010024730 A KR 20010024730A
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KR
South Korea
Prior art keywords
silicon carbide
epitaxial layer
gas
carrier gas
reactor
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Ceased
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KR1020007006611A
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English (en)
Korean (ko)
Inventor
코디나올레클레이스에릭
어바인케네스죠지
페이슬리마이클제임스
Original Assignee
크리 인코포레이티드
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Application filed by 크리 인코포레이티드 filed Critical 크리 인코포레이티드
Publication of KR20010024730A publication Critical patent/KR20010024730A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Products (AREA)
KR1020007006611A 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장 Ceased KR20010024730A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/992,157 1997-12-17
US08/992,157 US6063186A (en) 1997-12-17 1997-12-17 Growth of very uniform silicon carbide epitaxial layers
PCT/US1998/026558 WO1999031306A1 (en) 1997-12-17 1998-12-14 Growth of very uniform silicon carbide epitaxial layers

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020067008905A Division KR100718575B1 (ko) 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장

Publications (1)

Publication Number Publication Date
KR20010024730A true KR20010024730A (ko) 2001-03-26

Family

ID=25537981

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020007006611A Ceased KR20010024730A (ko) 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장
KR1020067008905A Expired - Lifetime KR100718575B1 (ko) 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장
KR1020067022993A Expired - Lifetime KR100853553B1 (ko) 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020067008905A Expired - Lifetime KR100718575B1 (ko) 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장
KR1020067022993A Expired - Lifetime KR100853553B1 (ko) 1997-12-17 1998-12-14 고균일도를 갖는 실리콘 카바이드 에피택셜층의 성장

Country Status (11)

Country Link
US (2) US6063186A (https=)
EP (1) EP1042544B1 (https=)
JP (1) JP4195192B2 (https=)
KR (3) KR20010024730A (https=)
CN (2) CN100560792C (https=)
AT (1) ATE226266T1 (https=)
AU (1) AU2086699A (https=)
CA (1) CA2312790C (https=)
DE (1) DE69808803T2 (https=)
ES (1) ES2184354T3 (https=)
WO (1) WO1999031306A1 (https=)

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US7170097B2 (en) * 2003-02-14 2007-01-30 Cree, Inc. Inverted light emitting diode on conductive substrate
US7112860B2 (en) * 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
US7898047B2 (en) * 2003-03-03 2011-03-01 Samsung Electronics Co., Ltd. Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices
US6964917B2 (en) * 2003-04-08 2005-11-15 Cree, Inc. Semi-insulating silicon carbide produced by Neutron transmutation doping
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US7247513B2 (en) * 2003-05-08 2007-07-24 Caracal, Inc. Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide
WO2004102686A1 (en) * 2003-05-09 2004-11-25 Cree, Inc. Led fabrication via ion implant isolation
US7018554B2 (en) * 2003-09-22 2006-03-28 Cree, Inc. Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices
JP4387159B2 (ja) * 2003-10-28 2009-12-16 東洋炭素株式会社 黒鉛材料、炭素繊維強化炭素複合材料、及び、膨張黒鉛シート
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US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7230274B2 (en) * 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
US7173285B2 (en) 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
US7109521B2 (en) * 2004-03-18 2006-09-19 Cree, Inc. Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
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CN102646578B (zh) * 2012-05-09 2014-09-24 中国电子科技集团公司第五十五研究所 提高碳化硅多层结构外延材料批次间掺杂均匀性的方法
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TW201415541A (zh) * 2012-10-11 2014-04-16 Ritedia Corp 磊晶成長方法
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Also Published As

Publication number Publication date
AU2086699A (en) 1999-07-05
US6063186A (en) 2000-05-16
KR100718575B1 (ko) 2007-05-15
US6297522B1 (en) 2001-10-02
JP2002508298A (ja) 2002-03-19
CA2312790A1 (en) 1999-06-24
CA2312790C (en) 2008-08-05
DE69808803D1 (de) 2002-11-21
CN1313653C (zh) 2007-05-02
CN1958841A (zh) 2007-05-09
JP4195192B2 (ja) 2008-12-10
WO1999031306A1 (en) 1999-06-24
EP1042544A1 (en) 2000-10-11
DE69808803T2 (de) 2003-09-18
ATE226266T1 (de) 2002-11-15
CN1282386A (zh) 2001-01-31
KR20060061405A (ko) 2006-06-07
KR20060121996A (ko) 2006-11-29
EP1042544B1 (en) 2002-10-16
KR100853553B1 (ko) 2008-08-21
ES2184354T3 (es) 2003-04-01
CN100560792C (zh) 2009-11-18

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