ATE226266T1 - Züchtung von sehr gleichmässigen epitaktischen schichten aus silizium karbid - Google Patents

Züchtung von sehr gleichmässigen epitaktischen schichten aus silizium karbid

Info

Publication number
ATE226266T1
ATE226266T1 AT98965390T AT98965390T ATE226266T1 AT E226266 T1 ATE226266 T1 AT E226266T1 AT 98965390 T AT98965390 T AT 98965390T AT 98965390 T AT98965390 T AT 98965390T AT E226266 T1 ATE226266 T1 AT E226266T1
Authority
AT
Austria
Prior art keywords
silicon carbide
reactor
hydrogen
gas
growing
Prior art date
Application number
AT98965390T
Other languages
German (de)
English (en)
Inventor
Olle Claes Erik Kordina
Kenneth George Irvine
Michael James Paisley
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE226266T1 publication Critical patent/ATE226266T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Ceramic Products (AREA)
AT98965390T 1997-12-17 1998-12-14 Züchtung von sehr gleichmässigen epitaktischen schichten aus silizium karbid ATE226266T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/992,157 US6063186A (en) 1997-12-17 1997-12-17 Growth of very uniform silicon carbide epitaxial layers
PCT/US1998/026558 WO1999031306A1 (en) 1997-12-17 1998-12-14 Growth of very uniform silicon carbide epitaxial layers

Publications (1)

Publication Number Publication Date
ATE226266T1 true ATE226266T1 (de) 2002-11-15

Family

ID=25537981

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98965390T ATE226266T1 (de) 1997-12-17 1998-12-14 Züchtung von sehr gleichmässigen epitaktischen schichten aus silizium karbid

Country Status (11)

Country Link
US (2) US6063186A (https=)
EP (1) EP1042544B1 (https=)
JP (1) JP4195192B2 (https=)
KR (3) KR20010024730A (https=)
CN (2) CN100560792C (https=)
AT (1) ATE226266T1 (https=)
AU (1) AU2086699A (https=)
CA (1) CA2312790C (https=)
DE (1) DE69808803T2 (https=)
ES (1) ES2184354T3 (https=)
WO (1) WO1999031306A1 (https=)

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US7170097B2 (en) * 2003-02-14 2007-01-30 Cree, Inc. Inverted light emitting diode on conductive substrate
US7112860B2 (en) * 2003-03-03 2006-09-26 Cree, Inc. Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices
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US7147713B2 (en) * 2003-04-30 2006-12-12 Cree, Inc. Phase controlled sublimation
US7247513B2 (en) * 2003-05-08 2007-07-24 Caracal, Inc. Dissociation of silicon clusters in a gas phase during chemical vapor deposition homo-epitaxial growth of silicon carbide
WO2004102686A1 (en) * 2003-05-09 2004-11-25 Cree, Inc. Led fabrication via ion implant isolation
US7018554B2 (en) * 2003-09-22 2006-03-28 Cree, Inc. Method to reduce stacking fault nucleation sites and reduce forward voltage drift in bipolar devices
JP4387159B2 (ja) * 2003-10-28 2009-12-16 東洋炭素株式会社 黒鉛材料、炭素繊維強化炭素複合材料、及び、膨張黒鉛シート
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US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7230274B2 (en) * 2004-03-01 2007-06-12 Cree, Inc Reduction of carrot defects in silicon carbide epitaxy
US7173285B2 (en) 2004-03-18 2007-02-06 Cree, Inc. Lithographic methods to reduce stacking fault nucleation sites
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US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
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US8536582B2 (en) 2008-12-01 2013-09-17 Cree, Inc. Stable power devices on low-angle off-cut silicon carbide crystals
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US8685845B2 (en) 2010-08-20 2014-04-01 International Business Machines Corporation Epitaxial growth of silicon doped with carbon and phosphorus using hydrogen carrier gas
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WO2015129867A1 (ja) * 2014-02-28 2015-09-03 新日鐵住金株式会社 エピタキシャル炭化珪素ウエハの製造方法
CN104593865A (zh) * 2014-12-25 2015-05-06 廖奇泊 碳化硅垒晶层的制造方法
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JP2016028009A (ja) * 2015-09-02 2016-02-25 住友電気工業株式会社 炭化珪素基板および炭化珪素半導体装置ならびに炭化珪素基板および炭化珪素半導体装置の製造方法
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JP6969628B2 (ja) * 2016-02-15 2021-11-24 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
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JP7463911B2 (ja) * 2020-08-26 2024-04-09 信越半導体株式会社 シリコン単結晶基板の製造方法及びシリコンエピタキシャルウェーハの製造方法
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Also Published As

Publication number Publication date
AU2086699A (en) 1999-07-05
US6063186A (en) 2000-05-16
KR100718575B1 (ko) 2007-05-15
US6297522B1 (en) 2001-10-02
JP2002508298A (ja) 2002-03-19
CA2312790A1 (en) 1999-06-24
CA2312790C (en) 2008-08-05
DE69808803D1 (de) 2002-11-21
CN1313653C (zh) 2007-05-02
CN1958841A (zh) 2007-05-09
JP4195192B2 (ja) 2008-12-10
WO1999031306A1 (en) 1999-06-24
EP1042544A1 (en) 2000-10-11
DE69808803T2 (de) 2003-09-18
CN1282386A (zh) 2001-01-31
KR20060061405A (ko) 2006-06-07
KR20010024730A (ko) 2001-03-26
KR20060121996A (ko) 2006-11-29
EP1042544B1 (en) 2002-10-16
KR100853553B1 (ko) 2008-08-21
ES2184354T3 (es) 2003-04-01
CN100560792C (zh) 2009-11-18

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