KR102390828B1 - 반도체 소자 - Google Patents

반도체 소자 Download PDF

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Publication number
KR102390828B1
KR102390828B1 KR1020170103159A KR20170103159A KR102390828B1 KR 102390828 B1 KR102390828 B1 KR 102390828B1 KR 1020170103159 A KR1020170103159 A KR 1020170103159A KR 20170103159 A KR20170103159 A KR 20170103159A KR 102390828 B1 KR102390828 B1 KR 102390828B1
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South Korea
Prior art keywords
electrode
pad
semiconductor layer
type semiconductor
conductivity
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KR1020170103159A
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Korean (ko)
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KR20190018325A (ko
Inventor
성연준
박진수
최낙준
Original Assignee
쑤저우 레킨 세미컨덕터 컴퍼니 리미티드
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Priority to KR1020170103159A priority Critical patent/KR102390828B1/ko
Priority to EP18188482.6A priority patent/EP3444855B1/en
Priority to US16/100,785 priority patent/US10593838B2/en
Priority to JP2018152495A priority patent/JP2019036729A/ja
Priority to TW107128333A priority patent/TWI778116B/zh
Priority to CN201810923288.8A priority patent/CN109390446B/zh
Publication of KR20190018325A publication Critical patent/KR20190018325A/ko
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    • H01L33/38—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H01L33/22—
    • H01L33/62—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
KR1020170103159A 2017-08-14 2017-08-14 반도체 소자 Active KR102390828B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020170103159A KR102390828B1 (ko) 2017-08-14 2017-08-14 반도체 소자
EP18188482.6A EP3444855B1 (en) 2017-08-14 2018-08-10 Semiconductor light emitting device
US16/100,785 US10593838B2 (en) 2017-08-14 2018-08-10 Semiconductor device
JP2018152495A JP2019036729A (ja) 2017-08-14 2018-08-13 半導体素子
TW107128333A TWI778116B (zh) 2017-08-14 2018-08-14 半導體裝置
CN201810923288.8A CN109390446B (zh) 2017-08-14 2018-08-14 半导体器件

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170103159A KR102390828B1 (ko) 2017-08-14 2017-08-14 반도체 소자

Publications (2)

Publication Number Publication Date
KR20190018325A KR20190018325A (ko) 2019-02-22
KR102390828B1 true KR102390828B1 (ko) 2022-04-26

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Family Applications (1)

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KR1020170103159A Active KR102390828B1 (ko) 2017-08-14 2017-08-14 반도체 소자

Country Status (6)

Country Link
US (1) US10593838B2 (enExample)
EP (1) EP3444855B1 (enExample)
JP (1) JP2019036729A (enExample)
KR (1) KR102390828B1 (enExample)
CN (1) CN109390446B (enExample)
TW (1) TWI778116B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220384685A1 (en) * 2021-05-26 2022-12-01 Nichia Corporation Light-emitting element
WO2024237552A1 (ko) * 2023-05-12 2024-11-21 서울바이오시스주식회사 발광 소자 및 이를 포함하는 디스플레이 장치

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190189850A1 (en) * 2017-12-19 2019-06-20 Epistar Corporation Light-emitting device
JP7541813B2 (ja) * 2018-05-30 2024-08-29 ソウル バイオシス カンパニー リミテッド 発光ダイオード及びそれを有する発光素子
DE102019112949A1 (de) * 2019-05-16 2020-11-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und strahlungsemittierendes Bauteil
US10971650B2 (en) * 2019-07-29 2021-04-06 Lextar Electronics Corporation Light emitting device
KR20210019804A (ko) * 2019-08-13 2021-02-23 삼성전자주식회사 Led 소자 및 이를 포함하는 led 디스플레이 모듈
US11038088B2 (en) 2019-10-14 2021-06-15 Lextar Electronics Corporation Light emitting diode package
KR20220097402A (ko) * 2019-11-08 2022-07-07 이데미쓰 고산 가부시키가이샤 적층체 및 반도체 장치
US11569415B2 (en) * 2020-03-11 2023-01-31 Lumileds Llc Light emitting diode devices with defined hard mask opening
US11735695B2 (en) * 2020-03-11 2023-08-22 Lumileds Llc Light emitting diode devices with current spreading layer
DE102020114772A1 (de) * 2020-06-03 2021-12-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterchip
TWI855134B (zh) * 2020-08-19 2024-09-11 晶元光電股份有限公司 化合物半導體元件及化合物半導體裝置
KR102385672B1 (ko) * 2020-09-04 2022-04-13 주식회사 포톤웨이브 자외선 발광소자 및 이를 포함하는 발광소자 패키지
WO2022050510A1 (ko) 2020-09-04 2022-03-10 주식회사 포톤웨이브 자외선 발광소자 및 이를 포함하는 발광소자 패키지
CN112750925B (zh) * 2020-12-31 2022-04-08 广东省科学院半导体研究所 深紫外led器件结构及其制备方法
JP6995227B1 (ja) * 2021-01-07 2022-01-14 日機装株式会社 半導体発光素子および半導体発光素子の製造方法
US20230238419A1 (en) * 2021-01-21 2023-07-27 Photon Wave Co., Ltd. Ultraviolet light-emitting device
KR102539566B1 (ko) * 2021-01-21 2023-06-05 주식회사 포톤웨이브 자외선 발광소자
JP7504054B2 (ja) * 2021-04-20 2024-06-21 日機装株式会社 半導体発光素子
JP7329742B2 (ja) * 2021-05-26 2023-08-21 日亜化学工業株式会社 発光素子
CN113410359B (zh) * 2021-06-17 2022-07-26 厦门三安光电有限公司 一种发光二极管芯片、发光装置及显示装置
CN115663086A (zh) * 2021-08-10 2023-01-31 厦门三安光电有限公司 发光二极管及发光装置
CN113921672B (zh) * 2021-09-14 2023-06-20 厦门三安光电有限公司 发光二极管及发光模块
CN115832143A (zh) * 2021-09-24 2023-03-21 厦门三安光电有限公司 倒装发光二极管和发光装置
WO2023060753A1 (zh) * 2021-10-14 2023-04-20 淮安澳洋顺昌光电技术有限公司 Led芯片及其制备方法
CN113851566B (zh) * 2021-12-01 2022-02-11 山西中科潞安紫外光电科技有限公司 一种深紫外led倒装芯片及其制作方法
EP4498539A1 (en) * 2022-02-25 2025-01-29 Ireach Corporation Semiconductor laser and packaging structure thereof
CN116130574A (zh) * 2022-12-16 2023-05-16 天津三安光电有限公司 发光二极管及发光装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001060740A (ja) 1996-03-25 2001-03-06 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2007134533A (ja) 2005-11-11 2007-05-31 Nichia Chem Ind Ltd 半導体発光素子及びその製造方法
US20120085986A1 (en) * 2009-06-18 2012-04-12 Panasonic Corporation Gallium nitride-based compound semiconductor light-emitting diode

Family Cites Families (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5153889A (en) 1989-05-31 1992-10-06 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2927158B2 (ja) 1993-09-29 1999-07-28 サンケン電気株式会社 半導体発光素子
US6340824B1 (en) * 1997-09-01 2002-01-22 Kabushiki Kaisha Toshiba Semiconductor light emitting device including a fluorescent material
JP3033564B2 (ja) 1997-10-02 2000-04-17 セイコーエプソン株式会社 半導体装置の製造方法
JP3614070B2 (ja) 2000-01-17 2005-01-26 日亜化学工業株式会社 窒化物半導体発光ダイオード
JP3786114B2 (ja) 2000-11-21 2006-06-14 日亜化学工業株式会社 窒化物半導体素子
US6777253B2 (en) 2000-12-20 2004-08-17 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device
JP4161603B2 (ja) 2001-03-28 2008-10-08 日亜化学工業株式会社 窒化物半導体素子
US6958497B2 (en) 2001-05-30 2005-10-25 Cree, Inc. Group III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structures
JP5055678B2 (ja) * 2001-09-28 2012-10-24 日亜化学工業株式会社 窒化物半導体発光素子
EP1453160B1 (en) 2001-11-05 2008-02-27 Nichia Corporation Semiconductor element
EP2262007B1 (en) 2002-01-28 2016-11-23 Nichia Corporation Nitride semiconductor element with supporting substrate
KR101030068B1 (ko) 2002-07-08 2011-04-19 니치아 카가쿠 고교 가부시키가이샤 질화물 반도체 소자의 제조방법 및 질화물 반도체 소자
US7521693B2 (en) 2003-10-16 2009-04-21 Alis Corporation Ion sources, systems and methods
KR100541102B1 (ko) 2004-02-13 2006-01-11 삼성전기주식회사 오믹 접촉을 개선한 질화물 반도체 발광소자 및 그 제조방법
US7067838B1 (en) 2004-04-16 2006-06-27 Nitride Semiconductors Co., Ltd. Gallium-nitride-based light-emitting apparatus
JP2006032779A (ja) * 2004-07-20 2006-02-02 Sanyo Electric Co Ltd 窒化物半導体発光素子
WO2006043422A1 (ja) * 2004-10-19 2006-04-27 Nichia Corporation 半導体素子
US20060260671A1 (en) 2005-05-17 2006-11-23 Rohm Co., Ltd. Semiconductor device and semiconductor light emitting device
JP2007103690A (ja) 2005-10-05 2007-04-19 Matsushita Electric Ind Co Ltd 半導体発光装置及びその製造方法
JP4974270B2 (ja) * 2006-03-20 2012-07-11 日本電信電話株式会社 発光ダイオード
TWI318013B (en) * 2006-09-05 2009-12-01 Epistar Corp A light emitting device and the manufacture method thereof
KR100820546B1 (ko) * 2006-09-07 2008-04-07 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
JP4353232B2 (ja) * 2006-10-24 2009-10-28 ソニー株式会社 発光素子
CN102779918B (zh) 2007-02-01 2015-09-02 日亚化学工业株式会社 半导体发光元件
KR101330898B1 (ko) 2007-04-05 2013-11-18 엘지전자 주식회사 반도체 레이저 다이오드
US20100006884A1 (en) * 2007-08-07 2010-01-14 Epistar Corporation Light Emitting Device and Manufacturing Method Therof
JP5474292B2 (ja) 2007-11-06 2014-04-16 シャープ株式会社 窒化物半導体発光ダイオード素子
JP2008285758A (ja) 2008-06-02 2008-11-27 Nippon Steel Corp 一方向性電磁鋼板
KR20100003321A (ko) 2008-06-24 2010-01-08 삼성전자주식회사 발광 소자, 이를 포함하는 발광 장치, 상기 발광 소자 및발광 장치의 제조 방법
US9142714B2 (en) * 2008-10-09 2015-09-22 Nitek, Inc. High power ultraviolet light emitting diode with superlattice
US8008683B2 (en) 2008-10-22 2011-08-30 Samsung Led Co., Ltd. Semiconductor light emitting device
DE112009003719T5 (de) * 2008-12-10 2012-08-16 Furukawa Electric Co., Ltd., Halbleiterlaserelement und herstellungsverfahren dafür
JP5407359B2 (ja) 2009-01-23 2014-02-05 信越半導体株式会社 発光ダイオード
JP5152133B2 (ja) * 2009-09-18 2013-02-27 豊田合成株式会社 発光素子
KR101007087B1 (ko) 2009-10-26 2011-01-10 엘지이노텍 주식회사 발광소자 및 그 제조방법
JP2011187591A (ja) 2010-03-08 2011-09-22 Uv Craftory Co Ltd 窒化物半導体紫外線発光素子
US8154042B2 (en) 2010-04-29 2012-04-10 Koninklijke Philips Electronics N V Light emitting device with trenches and a top contact
JP5659966B2 (ja) * 2010-06-29 2015-01-28 日亜化学工業株式会社 半導体素子及びその製造方法
JP5319628B2 (ja) 2010-08-26 2013-10-16 シャープ株式会社 窒化物半導体素子および半導体光学装置
DE102010044986A1 (de) 2010-09-10 2012-03-15 Osram Opto Semiconductors Gmbh Leuchtdiodenchip und Verfahren zur Herstellung eines Leuchtdiodenchips
JP2012216603A (ja) 2011-03-31 2012-11-08 Sharp Corp 窒化物半導体発光素子およびその製造方法
JP4989773B1 (ja) 2011-05-16 2012-08-01 株式会社東芝 半導体発光素子
US9252329B2 (en) 2011-10-04 2016-02-02 Palo Alto Research Center Incorporated Ultraviolet light emitting devices having compressively strained light emitting layer for enhanced light extraction
JP5988568B2 (ja) 2011-11-14 2016-09-07 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子およびその製造方法
JP2013149889A (ja) 2012-01-23 2013-08-01 Stanley Electric Co Ltd ＧａＮ系半導体発光素子
JP5857786B2 (ja) 2012-02-21 2016-02-10 日亜化学工業株式会社 半導体発光素子の製造方法
JP5978758B2 (ja) 2012-05-21 2016-08-24 日亜化学工業株式会社 半導体発光素子
KR101941033B1 (ko) 2012-07-05 2019-01-22 엘지이노텍 주식회사 발광소자
TWI544658B (zh) * 2012-08-01 2016-08-01 晶元光電股份有限公司 發光二極體結構
KR101953716B1 (ko) 2012-08-23 2019-03-05 엘지이노텍 주식회사 발광소자, 발광 소자 패키지 및 조명 시스템
US9401452B2 (en) 2012-09-14 2016-07-26 Palo Alto Research Center Incorporated P-side layers for short wavelength light emitters
KR20140038886A (ko) 2012-09-21 2014-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자
JP2014127708A (ja) 2012-12-27 2014-07-07 Toshiba Corp 半導体発光素子及び半導体発光素子の製造方法
JP2016084822A (ja) 2013-01-21 2016-05-19 ジヤトコ株式会社 マルチディスク変速機
KR101958419B1 (ko) 2013-01-29 2019-03-14 삼성전자 주식회사 반도체 발광 소자
KR102037865B1 (ko) 2013-02-01 2019-10-30 삼성전자주식회사 반도체 발광소자 및 반도체 발광소자 제조방법
US20160005919A1 (en) 2013-02-05 2016-01-07 Tokuyama Corporation Nitride semiconductor light emitting device
JP6118575B2 (ja) * 2013-02-12 2017-04-19 日亜化学工業株式会社 発光装置
JP6287317B2 (ja) 2013-02-28 2018-03-07 日亜化学工業株式会社 半導体発光素子
KR20140130618A (ko) 2013-05-01 2014-11-11 서울바이오시스 주식회사 솔더 페이스트를 통해 접착된 발광 다이오드를 갖는 발광 다이오드 모듈 및 발광 다이오드
JP6466653B2 (ja) 2013-05-17 2019-02-06 スタンレー電気株式会社 窒化物半導体発光素子、および窒化物半導体ウェーハ
JP6192378B2 (ja) 2013-06-18 2017-09-06 学校法人 名城大学 窒化物半導体発光素子
US9847457B2 (en) 2013-07-29 2017-12-19 Seoul Viosys Co., Ltd. Light emitting diode, method of fabricating the same and LED module having the same
US10069049B2 (en) * 2013-07-30 2018-09-04 National Institute Of Information And Communicatio Semiconductor light emitting element and method for manufacturing the same
EP3043395B1 (en) 2013-09-05 2018-11-07 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device
KR101561203B1 (ko) * 2014-03-31 2015-10-20 주식회사 세미콘라이트 반도체 발광소자
JP5818853B2 (ja) 2013-10-15 2015-11-18 株式会社トクヤマ ｎ型窒化アルミニウム単結晶基板を用いた縦型窒化物半導体デバイス
KR102070089B1 (ko) * 2013-10-23 2020-01-29 삼성전자주식회사 반도체 발광소자 패키지 및 이를 이용한 조명장치
JP2015119108A (ja) * 2013-12-19 2015-06-25 パナソニックＩｐマネジメント株式会社 紫外線発光素子
KR102098245B1 (ko) * 2014-02-11 2020-04-07 삼성전자 주식회사 광원 패키지 및 그를 포함하는 표시 장치
US9397309B2 (en) 2014-03-13 2016-07-19 Universal Display Corporation Organic electroluminescent devices
JP6262036B2 (ja) 2014-03-14 2018-01-17 スタンレー電気株式会社 発光装置
KR101458389B1 (ko) 2014-04-01 2014-11-06 (주)유비쿼스 G.hn 기술을 엑세스 네트워크에 적용하기 위한 장치
WO2015156588A1 (ko) 2014-04-07 2015-10-15 엘지이노텍 주식회사 발광소자 및 조명시스템
JP2015216352A (ja) 2014-04-24 2015-12-03 国立研究開発法人理化学研究所 紫外発光ダイオードおよびそれを備える電気機器
WO2016004374A1 (en) 2014-07-02 2016-01-07 Trustees Of Boston University Ultraviolet light emitting diodes
EP2988339B1 (en) 2014-08-20 2019-03-27 LG Innotek Co., Ltd. Light emitting device
JP6337686B2 (ja) 2014-08-21 2018-06-06 三菱ケミカル株式会社 ＧａＮ基板およびＧａＮ基板の製造方法
KR102282141B1 (ko) * 2014-09-02 2021-07-28 삼성전자주식회사 반도체 발광소자
JP6330604B2 (ja) 2014-09-24 2018-05-30 日亜化学工業株式会社 半導体発光素子
KR20160037060A (ko) 2014-09-26 2016-04-05 서울바이오시스 주식회사 발광소자 및 그 제조 방법
KR102263066B1 (ko) 2014-11-12 2021-06-10 서울바이오시스 주식회사 발광 소자
DE112015005124T5 (de) 2014-11-12 2017-08-24 Seoul Viosys Co., Ltd. Lichtemittierende Diode
KR20160062659A (ko) 2014-11-25 2016-06-02 서울바이오시스 주식회사 자외선 발광 다이오드
DE112015005634T5 (de) 2014-12-19 2017-09-07 Seoul Viosys Co., Ltd. Halbleiter-lichtemissionseinrichtung und verfahren zur herstellung von dieser
JP5877487B1 (ja) * 2014-12-26 2016-03-08 パナソニックＩｐマネジメント株式会社 発光装置
US9865772B2 (en) 2015-01-06 2018-01-09 Apple Inc. LED structures for reduced non-radiative sidewall recombination
KR102329719B1 (ko) 2015-02-23 2021-11-23 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 라이트 유닛
KR102303502B1 (ko) 2015-02-25 2021-09-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 및 이를 구비한 발광 소자 패키지
KR20160105126A (ko) 2015-02-27 2016-09-06 서울바이오시스 주식회사 스트레인 강화된 웰층을 갖는 발광 다이오드
KR102239627B1 (ko) 2015-03-26 2021-04-12 엘지이노텍 주식회사 발광 소자 패키지
KR102416010B1 (ko) 2015-03-31 2022-07-05 서울바이오시스 주식회사 자외선 발광 소자
US20180076355A1 (en) * 2015-04-09 2018-03-15 Panasonic Intellectual Property Management Co., Ltd. Nitride semiconductor light emitting device
JP6860293B2 (ja) 2015-04-28 2021-04-14 日機装株式会社 発光素子および発光素子の製造方法
KR102388284B1 (ko) 2015-05-26 2022-04-19 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자
US9540252B1 (en) 2015-06-08 2017-01-10 Rayvio Corporation Ultraviolet disinfection system
JP6832620B2 (ja) * 2015-07-17 2021-02-24 スタンレー電気株式会社 窒化物半導体発光素子
WO2017049053A1 (en) 2015-09-17 2017-03-23 Crystal Is, Inc. Ultraviolet light-emitting devices incorporating two-dimensional hole gases
KR102391513B1 (ko) 2015-10-05 2022-04-27 삼성전자주식회사 물질막 적층체, 발광 소자, 발광 패키지, 및 발광 소자의 제조 방법
TWI772253B (zh) * 2015-11-13 2022-08-01 晶元光電股份有限公司 發光元件
CN109417112B (zh) 2016-06-24 2022-06-21 苏州乐琻半导体有限公司 半导体器件和包括半导体器件的半导体器件封装
US10340415B2 (en) 2016-09-01 2019-07-02 Lg Innotek Co., Ltd. Semiconductor device and semiconductor device package including the same
US10903395B2 (en) 2016-11-24 2021-01-26 Lg Innotek Co., Ltd. Semiconductor device having varying concentrations of aluminum

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001060740A (ja) 1996-03-25 2001-03-06 Nichia Chem Ind Ltd 窒化物半導体レーザ素子
JP2007134533A (ja) 2005-11-11 2007-05-31 Nichia Chem Ind Ltd 半導体発光素子及びその製造方法
US20120085986A1 (en) * 2009-06-18 2012-04-12 Panasonic Corporation Gallium nitride-based compound semiconductor light-emitting diode

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220384685A1 (en) * 2021-05-26 2022-12-01 Nichia Corporation Light-emitting element
US12408493B2 (en) * 2021-05-26 2025-09-02 Nichia Corporation Light-emitting element including first semiconductor layer having exposed portion with first region and second regions
WO2024237552A1 (ko) * 2023-05-12 2024-11-21 서울바이오시스주식회사 발광 소자 및 이를 포함하는 디스플레이 장치

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